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Advances In Defect Characterizations Of Semiconductors Using Positrons
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Book Synopsis Advances in Defect Characterizations of Semiconductors Using Positrons by :
Download or read book Advances in Defect Characterizations of Semiconductors Using Positrons written by and published by . This book was released on 1996 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Positron Annihilation Spectroscopy (PAS) is a sensitive probe for studying the electronic structure of defects in solids. The authors summarize recent developments in defect characterization of semiconductors using depth-resolved PAS. The progress achieved in extending the capabilities of the PAS method is also described.
Book Synopsis Defect Recognition and Image Processing in Semiconductors 1997 by : J. Doneker
Download or read book Defect Recognition and Image Processing in Semiconductors 1997 written by J. Doneker and published by Routledge. This book was released on 2017-11-22 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
Book Synopsis Point Defect Characterization of III-V Semiconductor Wafers Using Positron Annihilation Spectroscopy by : Joseph Mahony
Download or read book Point Defect Characterization of III-V Semiconductor Wafers Using Positron Annihilation Spectroscopy written by Joseph Mahony and published by . This book was released on 1996 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advances in Materials Characterization by : G. Amarendra
Download or read book Advances in Materials Characterization written by G. Amarendra and published by CRC Press. This book was released on 2007-01-29 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contributed articles moderated by Indian Institute of Metals.
Book Synopsis Treu-Vätterlicher Hirten-Brief an die Reformirte Gemeinde der Stadt Amsterdam by :
Download or read book Treu-Vätterlicher Hirten-Brief an die Reformirte Gemeinde der Stadt Amsterdam written by and published by . This book was released on 1739 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis III-Nitride Semiconductors by : M.O. Manasreh
Download or read book III-Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Book Synopsis Characterisation and Control of Defects in Semiconductors by : Filip Tuomisto
Download or read book Characterisation and Control of Defects in Semiconductors written by Filip Tuomisto and published by Materials, Circuits and Device. This book was released on 2019-10-27 with total page 601 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an up-to-date review of the experimental and theoretical methods used for studying defects in semiconductors, this book focuses on recent developments driven by the requirements of new materials, including nitrides, oxide semiconductors and 2-D semiconductors.
Book Synopsis Extended Defects in Semiconductors by : D. B. Holt
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Book Synopsis Point Defect Characterization of Bulk II-VI Semiconductors Using Positron Annihilation Spectroscopy by : Grant Tessaro
Download or read book Point Defect Characterization of Bulk II-VI Semiconductors Using Positron Annihilation Spectroscopy written by Grant Tessaro and published by . This book was released on 1998 with total page 91 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Improving Contacts and Defect Characterization Toward Industry-ready 2D Semiconductors by : Kirstin Schauble
Download or read book Improving Contacts and Defect Characterization Toward Industry-ready 2D Semiconductors written by Kirstin Schauble and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: For six decades, silicon technology has driven advances in computing; however, silicon is approaching its fundamental scaling limits. In contrast, two-dimensional (2D) semiconductors offer excellent electrical properties in sub-nanometer thin channels, and they are compatible with 3D heterogeneous integration. This could enable ultra-dense logic and memory stacked vertically on a chip, unlocking vast new possibilities in computing advances. While 2D materials show great promise, their parasitic contact resistance and defect densities are well-known limitations for their electrical performance. In this thesis, I will describe the problem of contact resistance to 2D semiconductors and uncover our advances in understanding the interaction between metal contacts and the 2D semiconductor MoS2. I will also present a statistical analysis on the effect of specific metal properties on contact resistance with MoS2. I will then show how we have utilized these findings to demonstrate record-low contact resistances to monolayer MoS2. Next, I will address MoS2 defects, how they affect transistor performance, and how to quantify their densities quickly and non-destructively using Raman spectroscopy, which enables 100x higher throughput for material optimization. Combined, these advances provide fundamental insights into 2D semiconductor optimization, while bringing them closer to industrial adoption.
Author :Reinhard Krause-Rehberg Publisher :Springer Science & Business Media ISBN 13 :9783540643715 Total Pages :408 pages Book Rating :4.6/5 (437 download)
Book Synopsis Positron Annihilation in Semiconductors by : Reinhard Krause-Rehberg
Download or read book Positron Annihilation in Semiconductors written by Reinhard Krause-Rehberg and published by Springer Science & Business Media. This book was released on 1999 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.
Book Synopsis Defects and Diffusion in Semiconductors by : David J. Fisher
Download or read book Defects and Diffusion in Semiconductors written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2000-08-26 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: The third annual retrospective of the latest results in the field of defects and diffusion in semiconductors covers the period from mid-1999 to mid-2000. As usual, the coverage also includes, in addition to 'traditional' semiconductors, the more important of the nitride and silicide semiconductors.
Book Synopsis Advanced Technologies in Failure Prevention by : Mechanical Failures Prevention Group. Meeting
Download or read book Advanced Technologies in Failure Prevention written by Mechanical Failures Prevention Group. Meeting and published by Cambridge University Press. This book was released on 1991-06-28 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: The demand for safety and reliability in complex structures and mechanical systems is increasing as performance standards are escalated. The costs associated with premature or unexpected component failure require a continued need to employ the latest advances in science and engineering to assess performance throughout the life cycle. A significant contributor to the escalating costs of modern complex systems is that associated with the many maintenance actions required to keep the systems operational. The theme of this book is the improvement in mechanical systems through the application of advanced technology. Emphasis is placed on developments in instrumentation and techniques for detection, diagnosis, and prognosis, on the evaluation of materials durability and on mechanisms of failure in aircraft and industrial applications.
Book Synopsis Characterization of Advanced Materials by : R. Saravanan
Download or read book Characterization of Advanced Materials written by R. Saravanan and published by Trans Tech Publications Ltd. This book was released on 2011-09-21 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Special topic volume with invited peer reviewed papers only.
Book Synopsis Defect Recognition and Image Processing in Semiconductors 1997 by : J. Doneker
Download or read book Defect Recognition and Image Processing in Semiconductors 1997 written by J. Doneker and published by CRC Press. This book was released on 1998-01-01 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
Book Synopsis Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization by :
Download or read book Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization written by and published by Academic Press. This book was released on 1997-06-12 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical, physical, and optical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
