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Author : Jong Jin Lee
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (681 download)
Download or read book A Study on the Nanocrystal Floating-gate Nonvolatile Memory written by Jong Jin Lee and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Writam Banerjee
Publisher : CRC Press
ISBN 13 : 1040119107
Total Pages : 683 pages
Book Rating : 4.0/5 (41 download)
Download or read book Nanocrystals in Nonvolatile Memory written by Writam Banerjee and published by CRC Press. This book was released on 2024-08-09 with total page 683 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals in various applications have attracted considerable scientific attention in the field of nonvolatile memory (NVM). Nanocrystals are the driving elements that have helped nonvolatile flash memory technology reach its distinguished height, but new approaches are still needed to strengthen nanocrystal-based nonvolatile technology for future applications. This book presents comprehensive knowledge on nanocrystal fabrication methods and applications of nanocrystals in baseline NVM and emerging NVM technologies and the chapters are written by experts in the field from all over the globe. The book presents a detailed analysis on nanocrystal-based emerging devices by a high-level researcher in the field. It has a unique chapter especially dedicated to graphene-based flash memory devices, considering the importance of carbon allotropes in future applications. This updated edition covers emerging ferroelectric memory device, which is a technology for the future, and the chapter is contributed by the well-known Ferroelectric Memory Company, Germany. It includes information related to the applications of emerging memories in sensors and the chapter is contributed by Ajou University, South Korea. The book introduces a new chapter for emerging NVM technology in artificial intelligence and the chapter is contributed by University College London, UK. It guides the readers throughout with appropriate illustrations, excellent figures, and references in each chapter. It is a valuable tool for researchers and developers from the fields of electronics, semiconductors, nanotechnology, materials science, and solid-state memories.
Author : Hai Liu
Publisher :
ISBN 13 :
Total Pages : 198 pages
Book Rating : 4.:/5 (669 download)
Download or read book Floating Gate Engineering for Novel Nonvolatile Flash Memories written by Hai Liu and published by . This book was released on 2010 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing demands on higher density, lower cost, higher speed, better endurance and longer retention has push flash memory technology, which is predominant and the driving force of the semiconductor nonvolatile memory market in recent years, to the position facing great challenges. However, the conventional flash memory technology using continuous highly doped polysilicon as floating gate, which is the most common in today's commercial market, can't satisfy these demands, with the transistor size continuously scaling down beyond 32 nm. Nanocrystal floating gate flash memory and SONOS-type flash memory are considered among the most promising approaches to extend scalability and performance improvement for next generation flash memory. This dissertation addresses the issues that have big effects on nanocrystal floating gate flash memory and SONOS-type flash memory performances. New device structures and new material compatible to CMOS flow are proposed and demonstrated as potential solutions for further device performance improvement. First, the effect of nanocrystal-high k dielectric interface quality on nanocrystal flash memory performance is studied. By using germanium-silicon core-shell nanocrystals or ruthenium nanocrystals buried in HfO2 as charge storage nodes, high interface quality has been achieved, leading to promising memory device performance. Next, another crucial challenge for nanocrystal flash memory on how to deposit uniformly distributed nanocrystal matrix in good shape and size control with high density is discussed. Using protein GroEL to obtain well ordered high density nanocrystal pattern, a flash memory device with Ni nanocrystals buried in HfO2 is demonstrated. For this technique, the nanocrystal size is restricted to the GroEL's central cavity size and the density is limited by protein template. To overcome this limitation, a novel method using self-assembled Co-SiO2 nanocrystals as charge storage nodes is demonstrated. Separated by thin SiO2, these nanocrystals can form close packed form to achieve ultrahigh density. Finally, charge trapping layer band engineering is proposed for SONOS-type memory for better memory performance. By manipulating the pulse ratio of Hf and Al precursor during ALD deposition, the band diagram of Hf[subscript x]Al[subscript y]O charge trapping layer is optimized to have a Hf : Al ratio 3:1 at bottom and 1:3 at the top, leading to better trade-off between programming and retention for the of memory device.
Author : Writam Banerjee
Publisher : CRC Press
ISBN 13 : 1351203258
Total Pages : 534 pages
Book Rating : 4.3/5 (512 download)
Download or read book Nanocrystals in Nonvolatile Memory written by Writam Banerjee and published by CRC Press. This book was released on 2018-10-09 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, utilization of the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals has attracted considerable scientific attention in the field of nonvolatile memory. Nanocrystals are the driving element that have brought the nonvolatile flash memory technology to a distinguished height. However, new approaches are still required to strengthen this technology for future applications. This book details the methods of fabrication of nanocrystals and their application in baseline nonvolatile memory and emerging nonvolatile memory technologies. The chapters have been written by renowned experts of the field and will provide an in-depth understanding of these technologies. The book is a valuable tool for research and development sectors associated with electronics, semiconductors, nanotechnology, material sciences, solid state memories, and electronic devices.
Author : Yan Zhu
Publisher :
ISBN 13 :
Total Pages : 354 pages
Book Rating : 4.3/5 (121 download)
Download or read book Engineering the Nanocrystal Floating Gates for Nonvolatile Flash Memory Devices written by Yan Zhu and published by . This book was released on 2007 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Bei Li
Publisher :
ISBN 13 :
Total Pages : 122 pages
Book Rating : 4.:/5 (671 download)
Download or read book Novel Nonvolatile Memories with Engineered Nanocrystal Floating Gate written by Bei Li and published by . This book was released on 2010 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: In short, engineering the nano-floating gate by replacing Si nanocrystals with hybrid nanocrystals and silicide nanocrystals benefits the device retention time. These new memories also exhibit faster programming and erasing speeds. The enhanced memory performance makes the devices fit for next generation memory with further scaled tunnel oxid.
Author : El-Sayed A. M. Hasaneen
Publisher :
ISBN 13 :
Total Pages : 242 pages
Book Rating : 4.:/5 (558 download)
Download or read book Modeling and Simulation of Floating Gate Nanocrystal FET Devices and Circuits written by El-Sayed A. M. Hasaneen and published by . This book was released on 2004 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Joy Sarkar
Publisher :
ISBN 13 :
Total Pages : 214 pages
Book Rating : 4.:/5 (212 download)
Download or read book Non-volatile Memory Devices Beyond Process-scaled Planar Flash Technology written by Joy Sarkar and published by . This book was released on 2007 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mainstream non-volatile memory technology dominated by the planar Flash transistor with continuous floating-gate has been historically improved in density and performance primarily by means of process scaling, but is currently faced with significant hindrances to its future scaling due to fundamental constraints of electrostatics and reliability. This dissertation is based on exploring two pathways for circumventing scaling limitations of the state-of-the-art Flash memory technology. The first part of the dissertation is based on demonstrating a vertical Flash memory transistor with nanocrystal floating-gate, while the second part is based on developing fundamental understanding of the operation of Phase Change Memory. A vertical Flash transistor can allow the theoretical minimum cell area and a nanocrystal floating-gate on the sidewalls is shown to allow a thinner gate-stack further conducive to scaling while still providing good reliability. Subsequently, the application of a technique of protein-mediated assembly of preformed nanocrystals to the sidewalls of the vertical Flash transistor is also demonstrated and characterized. This technique of ordering pre-formed nanocrystals is beneficial towards achieving reproducible nanocrystal size uniformity and ordering especially in a highly scaled vertical Flash cell, rendering it more amenable to scaling and manufacturability. In both forms, the vertical Flash memory cell is shown to have good electrical characteristics and reliability for the viability of this cell design and implementation. In the remaining part of this dissertation, studies are undertaken towards developing fundamental understanding of the operational characteristics of Phase Change Memory (PCM) technology that is expected to replace floating-gate Flash technology based on its potential for scaling. First, a phenomenon of improving figures of merit of the PCM cell with operational cycles is electrically characterized. Based on the electrical characterization and published material characterization data, a physical model of an evolving "active region" of the cell is proposed to explain the improvement of the cell parameters with operational cycles. Then, basic understanding is developed on early and erratic retention failure in a statistically significant number of cells in a large array and, electrical characterization and physical modeling is used to explain the mechanism behind the early retention failure.
Author : Jingjian Ren
Publisher :
ISBN 13 :
Total Pages : 90 pages
Book Rating : 4.:/5 (851 download)
Download or read book Engineer Nanocrystal Floating Gate Memory Scaling written by Jingjian Ren and published by . This book was released on 2012 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Vincenzo Della marca
Publisher :
ISBN 13 :
Total Pages : 162 pages
Book Rating : 4.:/5 (898 download)
Download or read book Characterization and Modeling of Advanced Charge Trapping Non Volatile Memories written by Vincenzo Della marca and published by . This book was released on 2013 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: The silicon nanocrystal memories are one of the most attractive solutions to replace the Flash floating gate for nonvolatile memory embedded applications, especially for their high compatibility with CMOS process and the lower manufacturing cost. Moreover, the nanocrystal size guarantees a weak device-to-device coupling in an array configuration and, in addition, for this technology it has been shown the robustness against SILC. One of the main challenges for embedded memories in portable and contactless applications is to improve the energy consumption in order to reduce the design constraints. Today the application request is to use the Flash memories with both low voltage biases and fast programming operation. In this study, we present the state of the art of Flash floating gate memory cell and silicon nanocrystal memories. Concerning this latter device, we studied the effect of main technological parameters in order to optimize the cell performance. The aim was to achieve a satisfactory programming window for low energy applications. Furthermore, the silicon nanocrystal cell reliability has been investigated. We present for the first time a silicon nanocrystal memory cell with a good functioning after one million write/erase cycles, working on a wide range of temperature [-40°C; 150°C]. Moreover, ten years data retention at 150°C is extrapolated. Finally, the analysis concerning the current and energy consumption during the programming operation shows the opportunity to use the silicon nanocrystal cell for low power applications. All the experimental data have been compared with the results achieved on Flash floating gate memory, to show the performance improvement.
Author : Huimei Zhou
Publisher :
ISBN 13 :
Total Pages : 120 pages
Book Rating : 4.:/5 (841 download)
Download or read book Novel Nanocrystal Floating Gate Memory written by Huimei Zhou and published by . This book was released on 2012 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Barbara de Salvo
Publisher : John Wiley & Sons
ISBN 13 : 1118617800
Total Pages : 222 pages
Book Rating : 4.1/5 (186 download)
Download or read book Silicon Non-Volatile Memories written by Barbara de Salvo and published by John Wiley & Sons. This book was released on 2013-05-10 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor flash memory is an indispensable component of modern electronic systems which has gained a strategic position in recent decades due to the progressive shift from computing to consumer (and particularly mobile) products as revenue drivers for Integrated Circuits (IC) companies. This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on the use of new materials (such as silicon nanocrystals for storage nodes and high-k insulators for active dielectrics) and of new transistor structures (such as multi-gate devices) are investigated in order to extend classical floating gate technology to the 32 nm node. "Disruptive paths" based on new storage mechanisms or new technologies (such as phase-change devices, polymer or molecular cross-bar memories) are also covered in order to address 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.
Author : Kian Chiew Seow
Publisher :
ISBN 13 :
Total Pages : 100 pages
Book Rating : 4.:/5 (228 download)
Download or read book Commercialization of Germanium Based Nanocrystal Memory written by Kian Chiew Seow and published by . This book was released on 2007 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis explores the commercialization of germanium-based nanocrystal memories. Demand for smaller and faster electronics and embedded systems supports the development of high-density, low-power non-volatile electronic memory devices. Flash memory cells designed for ten years of data retention require the use of a thick tunneling oxide. This compromises writing and reading speed as well as endurance. A smaller device size can be achieved and speed and can be improved by decreasing the oxide thickness. However, significant charge leakage will occur if the oxide is too thin, which will reduce the data retention time dramatically. This imposes a limit to the amount by which the oxide thickness can be decreased in conventional devices. Research has shown that by incorporating nanocrystals in the tunnel oxide, charge traps are created which reduce charge leakage and improve endurance through charge-storage redundancy. By replacing the conventional floating gate memory with one using Si or Ge nanocrystals, the nonvolatile memory exhibits high programming speed with low programming voltage and superior retention time, and yet is compatible with conventional silicon technology. This thesis provides an analysis of competing technologies, an intellectual property analysis, costs modeling as well as ways to improve nanocrystal memories in order to compete with other forms of emerging technologies to replace conventional Flash memories.
Author : Shyam Sunder Raghunathan
Publisher : Stanford University
ISBN 13 :
Total Pages : 173 pages
Book Rating : 4.F/5 ( download)
Download or read book Scaled Planar Floating-gate NAND Flash Memory Technology written by Shyam Sunder Raghunathan and published by Stanford University. This book was released on 2010 with total page 173 pages. Available in PDF, EPUB and Kindle. Book excerpt: NAND flash memories are ubiquitous in their use as portable storage media in cellphones, cameras, music players, and other portable electronic devices. The NAND flash memory device, consisting of a floating-gate transistor cell, is the most aggressively scaled electronic device, as evidenced by ever-increasing memory capacities. In this work, we will examine possible problems arising from continued scaling of these structures, and discuss novel solutions to overcome them. Firstly, we investigate scaling of the conventional poly-silicon floating-gate, aimed at reducing cell-to-cell interference. We experimentally delineate a new reliability concern for the first time, with programming current through ultra-thin poly-silicon floating-gates becoming increasingly ballistic. We also experimentally demonstrate doping-related issues in the poly-silicon floating-gate. We then apply a novel metal-based floating-gate cell for the first time, designed to overcome the problems discussed above. We explore factors that influence the choice of metal, and demonstrate excellent functionality in ultra-thin metal floating-gate cells scaled down to 3 nm TiN floating-gate thickness, thus greatly reducing cell-to-cell interference. Finally, in order to facilitate continued scaling of the control dielectric, we explore replacement of the conventional silicon oxide-nitride dielectric with high-k dielectric materials. We integrate poly-silicon and metal floating-gate cells with Al2O3 high-k control dielectric. Further, we establish that a deeper work-function control gate is helpful in reducing gate-injection. Combining ultra-thin metal floating-gate, high-k control dielectric and deep work-function control gate, we enable the planar floating-gate cell as a scalable candidate.
Author : Mario Jesus Olmedo
Publisher :
ISBN 13 :
Total Pages : 108 pages
Book Rating : 4.:/5 (834 download)
Download or read book Study of Nanocrystal Structures and Their Memory Applications written by Mario Jesus Olmedo and published by . This book was released on 2012 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Panagiotis Dimitrakis
Publisher : Springer
ISBN 13 : 3319152904
Total Pages : 219 pages
Book Rating : 4.3/5 (191 download)
Download or read book Charge-Trapping Non-Volatile Memories written by Panagiotis Dimitrakis and published by Springer. This book was released on 2015-08-05 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.
Author : Michele L. Ostraat
Publisher :
ISBN 13 :
Total Pages : 474 pages
Book Rating : 4.:/5 (437 download)
Download or read book Synthesis and Characterization of Aerosol Silicon Nanoparticle Nonvolatile Floating Gate Memory Devices written by Michele L. Ostraat and published by . This book was released on 2001 with total page 474 pages. Available in PDF, EPUB and Kindle. Book excerpt:
