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Author : 王曦
Publisher :
ISBN 13 : 9781374773950
Total Pages : pages
Book Rating : 4.7/5 (739 download)
Download or read book A Study of Surface-Related Low-Frequency Noise in Mosfets and Metal Films written by 王曦 and published by . This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hei Wong
Publisher :
ISBN 13 :
Total Pages : 380 pages
Book Rating : 4.:/5 (513 download)
Download or read book A Study of Surface-related Low-frequency Noise in MOSFETs and Metal Films written by Hei Wong and published by . This book was released on 1990 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Martin Haartman
Publisher : Springer Science & Business Media
ISBN 13 : 1402059108
Total Pages : 224 pages
Book Rating : 4.4/5 (2 download)
Download or read book Low-Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
![Download A Low Frequency Noise Comparision [sic] of Surface Channel and Buried Channel MOSFETs PDF Online Free](https://books.google.com/books/content/images/frontcover/cQQiHAAACAAJ?fife=w200-h370)
Author : Chandravadan N. Patel
Publisher :
ISBN 13 :
Total Pages : 58 pages
Book Rating : 4.:/5 (218 download)
Download or read book A Low Frequency Noise Comparision [sic] of Surface Channel and Buried Channel MOSFETs written by Chandravadan N. Patel and published by . This book was released on 1977 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Martin von Haartman
Publisher : Springer
ISBN 13 : 9789048112753
Total Pages : 216 pages
Book Rating : 4.1/5 (127 download)
Download or read book Low-Frequency Noise in Advanced MOS Devices written by Martin von Haartman and published by Springer. This book was released on 2009-09-03 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
Author : Esin Terzioglu
Publisher :
ISBN 13 :
Total Pages : 332 pages
Book Rating : 4.:/5 (791 download)
Download or read book Low Frequency Noise in 100nm MOSFETs written by Esin Terzioglu and published by . This book was released on 1999 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
![Download Low Frequency Noise Studies in MOSFETs [microform] : Theory and Experiments PDF Online Free](https://books.google.com/books/content/images/frontcover/MbP4AAAACAAJ?fife=w200-h370)
Author : Yu Zhu
Publisher : National Library of Canada = Bibliothèque nationale du Canada
ISBN 13 : 9780315837331
Total Pages : 238 pages
Book Rating : 4.8/5 (373 download)
Download or read book Low Frequency Noise Studies in MOSFETs [microform] : Theory and Experiments written by Yu Zhu and published by National Library of Canada = Bibliothèque nationale du Canada. This book was released on 1992 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Walter Lee Willis
Publisher :
ISBN 13 :
Total Pages : 105 pages
Book Rating : 4.:/5 (989 download)
Download or read book Surface and Contact Effects on Low Frequency Noise in Semiconductors written by Walter Lee Willis and published by . This book was released on 1976 with total page 105 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Kiichi Kobayashi
Publisher :
ISBN 13 :
Total Pages : 11 pages
Book Rating : 4.:/5 (354 download)
Download or read book Low Frequency Noise in MOSFET'S written by Kiichi Kobayashi and published by . This book was released on 1983 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hao David Xiong
Publisher :
ISBN 13 :
Total Pages : 94 pages
Book Rating : 4.:/5 (569 download)
Download or read book Low Frequency Noise and Charge Trapping in MOSFETs written by Hao David Xiong and published by . This book was released on 2004 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : 黃煒庭
Publisher :
ISBN 13 :
Total Pages : 49 pages
Book Rating : 4.:/5 (123 download)
Download or read book A Study on Low Frequency Noise Characteristics of MOSFETs by TCAD Simulation written by 黃煒庭 and published by . This book was released on 2020 with total page 49 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Walter Lee Wills
Publisher :
ISBN 13 :
Total Pages : 210 pages
Book Rating : 4.:/5 (222 download)
Download or read book Surface and Contact Effects on Low Frequency Noise in Semiconductors written by Walter Lee Wills and published by . This book was released on 1973 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book I. Low Frequency Noise in Metal Films at the Superconducting Transition. II. Resistance of Superconductor - Normal Metal- Superconductor Sandwiches and the Quasiparticle Relaxation Time written by and published by . This book was released on 1977 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Measurements of the noise power spectra of tin and lead films at the superconducting transition in the frequency range of 0.1 Hz to 5k Hz are reported. Two types of samples were made. Type A were evaporated directly onto glass substrate, while Type B were evaporated onto glass or sapphire substrate with a 50A aluminum underlay. The results were consistent with a thermal diffusion model which attributes the noise to the intrinsic temperature fluctuation in the metal film driven with a random energy flux source. In both types of metal films, the noise power was found to be proportional to (V-bar)2 .beta.2/.cap omega., where V-bar was the mean voltage across the sample, .beta. was the temperature coefficient of resistance and .cap omega. was the volume of the sample. Correlation of noises in two regions of the metal film a distance d apart was detected at frequencies less than or = D/.pi.d2. A possible explanation of the noises using quantitative boundary conditions and implications of this work for device applications are discussed. Theoretical and experimental investigation are reported on the resistance of superconductor-normal metal-superconductor sandwiches near T/sub c/. The increase in SNS resistance is attributed to the penetration of normal electric current in the superconductor. It is proved from first principles that an electric field can exist inside the superconductor when quasiparticles are not equally populated on the two branches of the excitation spectrum, and such is the case in a current biased SNS junction. The electric field inside S decays according to a diffusion law. The diffusion length is determined by the quasiparticle ''branch-crossing'' relaxation time. The branch-crossing relaxation times were measured. Impurity-doping of tin was found to decrease this relaxation time.
Author : Xiawa Wang
Publisher :
ISBN 13 :
Total Pages : 81 pages
Book Rating : 4.:/5 (825 download)
Download or read book On the 1/f Noise of Atomic-layer-deposition Metal Films written by Xiawa Wang and published by . This book was released on 2011 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the measurement techniques and results of low-frequency noise for atomic-layer-deposition Pt films. Atomic-layer-deposition has been developed as an approach to make ultra-thin and conformal films. It has been employed to make detectors of bolometers. 1/f noise is a fundamental limit to the resolution. The experiments are designed to characterize the 1/f noise of the ALD fabricated Pt films. The measurement results show that for 7nm and 13nm ALD fabricated Pt films, 1/f noise is about two orders of magnitude larger than reported for continuous Pt films in literature. The thin film is also very likely to suffer from electromigration damage.
Author : A. van der Ziel
Publisher :
ISBN 13 :
Total Pages : 7 pages
Book Rating : 4.:/5 (227 download)
Download or read book A Study of Flicker Noise and Hot Electron Noise in JFETs, MOSFETs and Related Devices written by A. van der Ziel and published by . This book was released on 1983 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: 1/F NOISE IN UNIMPLANTED MOSFETs is also of the number fluctuations type. 1/f noise in JFETs is so small that it is almost unobservable. 1/f noise in buried channel MOSFETs is smaller than in diffused MOSFETs. Hot electron noise was observed in buried channel MOSFETs and in short channel JFETs. In the latter case it si masked by generation-combination noise due to partly ionized donors below 120 K. Low-frequency noise in GaAs current limiters is one-dimensional diffusion noise governed by an activation energy that is voltage dependent. Modulation-doped GaAs FETs (HEMTs) have a sizeable amount of 1/f noise, probably of the number fluctuations type and thermal noise at higher frequencies. Short n(+)-n( - )-n(+) GaAs diodes have a linear characteristic, higher frequencies. The high-frequency behavior of short n(+)-n( - )-n(+)GaAs diodes and of short n(+)-n( - )-grid-n( - )-n(+) solid state diodes was estimated; picosecond electronics seems feasible.
Author : Salih Kapıcıoğlu
Publisher :
ISBN 13 :
Total Pages : 240 pages
Book Rating : 4.:/5 (13 download)
Download or read book Survey of Modeling and Reduction Techniques for Low Frequency Noise in MOSFET Circuits written by Salih Kapıcıoğlu and published by . This book was released on 2015 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Drake A. Miller
Publisher :
ISBN 13 :
Total Pages : 148 pages
Book Rating : 4.:/5 (712 download)
Download or read book Random Dopants and Low-frequency Noise Reduction in Deep-submicron MOSFET Technology written by Drake A. Miller and published by . This book was released on 2011 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: The future of mixed-signal, memory, and microprocessor technologies are dependent on ever increasing analog and digital integration, higher cell densities, and demand for more processing power. As a result MOSFET device dimensions continue to shrink to meet these demands. A side effect of device scaling is increased variability at each technological node which affects both analog and digital circuits in terms of decreased yields, performance, and noise margins. At deep sub-micron dimensions the Low-Frequency Noise (LFN) of the MOSFET is dominated by the influence of one or more active traps capturing and emitting charge to and from the oxide creating wide variations in the LFN from otherwise identical devices. Additionally, the random position of dopant atoms near the Si/SiO2 interface create a potential landscape that induces regions of high and low conductivity which in turn causes a situation where the current is no longer uniform in the device, but consist of individual current paths or percolating currents. The coupling between the random variation of the percolation current and active traps in the oxide are responsible for the large spread (> 3 orders of magnitude) in the noise characteristics observed in deep sub-micron MOSFET devices. The compact LFN model presented here accounts for the action of traps on percolating currents in deep-sub-micron and nano-scale MOSFETs. Two schemes for reduction of LFN are studied based on the smoothing of the surface potential. First, noise reduction is demonstrated with measurements on sub-micron MOSFETs with forward substrate bias. Secondly, the model is further verified through the reduction of noise by the removal of dopant atoms near the Si/SiO2 interface of the device. Both schemes result in a lower noise and threshold device. Finally, these experimental findings are applied to a 2.2um 2 MP CMOS image sensor. From the temporal noise measurements on threshold implant process splits, the image sensor noise has been significantly reduced as a direct result of fundamentals described by this MOSFET LFN model and further proves the validity of these findings.
