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Author : N. G. Emerson
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (535 download)
Download or read book A Study of Ion Implanted Gallium Arsenide Using Deep Level Transient Spectroscopy written by N. G. Emerson and published by . This book was released on 1981 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 24 pages
Book Rating : 4.:/5 (227 download)
Download or read book Deep Levels in Ion Implanted GaAs (Gallium Arsenide). written by and published by . This book was released on 1986 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: In summary, the DLTS measurements have not found any majority carrier traps with a concentration greater than 1x ten to the 13th power cc after annealing an implanted sample at 850 C The implanted and annealed samples were found to have the same minority carrier trap spectra as the capped and annealed control samples. The capping and annealing results point out the need to investigate other methods such as rapid thermal annealing and capless annealing in order to prevent surface damage on annealing.
Author : Venkataramana Reddy Chavva
Publisher : Open Dissertation Press
ISBN 13 : 9781374766341
Total Pages : pages
Book Rating : 4.7/5 (663 download)
Download or read book Deep Level Transient Spectroscopy Studies of Gallium Arsenide and Silicon Carbide written by Venkataramana Reddy Chavva and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Deep Level Transient Spectroscopy Studies of Gallium Arsenide and Silicon Carbide" by Venkataramana Reddy, Chavva, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3123559 Subjects: Gallium arsenide Silicon carbide Spectrum analysis Rapid thermal processing
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ISBN 13 :
Total Pages : 754 pages
Book Rating : 4.3/5 (129 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1993 with total page 754 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 1572 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 1572 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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Publisher : Academic Press
ISBN 13 : 0080864430
Total Pages : 335 pages
Book Rating : 4.0/5 (88 download)
Download or read book Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization written by and published by Academic Press. This book was released on 1997-06-12 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical, physical, and optical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
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ISBN 13 :
Total Pages : 536 pages
Book Rating : 4.3/5 (91 download)
Download or read book ONR Far East Scientific Bulletin written by and published by . This book was released on 1987 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Venkataramana Reddy Chavva
Publisher :
ISBN 13 :
Total Pages : 188 pages
Book Rating : 4.:/5 (513 download)
Download or read book Deep Level Transient Spectroscopy Studies of Gallium Arsenide and Silicon Carbide written by Venkataramana Reddy Chavva and published by . This book was released on 1997 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 1016 pages
Book Rating : 4.3/5 (91 download)
Download or read book Review written by and published by . This book was released on 1974 with total page 1016 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 620 pages
Book Rating : 4.:/5 (31 download)
Download or read book The GEC Journal of Research written by and published by . This book was released on 1988 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 196 pages
Book Rating : 4.0/5 ( download)
Download or read book Postdoctoral Research Associateships written by and published by . This book was released on 1981 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 556 pages
Book Rating : 4.E/5 ( download)
Download or read book Diffusion and Defect Data written by and published by . This book was released on 2004 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : S.U. Campisano
Publisher : Elsevier
ISBN 13 : 0444596798
Total Pages : 320 pages
Book Rating : 4.4/5 (445 download)
Download or read book High Energy and High Dose Ion Implantation written by S.U. Campisano and published by Elsevier. This book was released on 1992-06-16 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion beam processing is a means of producing both novel materials and structures. The contributions in this volume strongly focus on this aspect and include many papers reporting on the modification of the electrical and structural properties of the target materials, both metals and semiconductors, as well as the synthesis of buried and surface compound layers. Many examples on the applications of high energy and high dose ion implantation are also given. All of the papers from Symposia C and D are presented in this single volume because the interests of many of the participants span both topics. Additionally many of the materials science aspects, including experimental methods, equipment and processing problems, diagnostic and analytical techniques are common to both symposia.
Author : G. Bastard
Publisher : Elsevier
ISBN 13 : 0444596720
Total Pages : 554 pages
Book Rating : 4.4/5 (445 download)
Download or read book Analytical Techniques for the Characterization of Compound Semiconductors written by G. Bastard and published by Elsevier. This book was released on 1991-07-26 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
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ISBN 13 :
Total Pages : 1812 pages
Book Rating : 4.F/5 ( download)
Download or read book Physics Briefs written by and published by . This book was released on 1992 with total page 1812 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Joan Marie Redwing
Publisher :
ISBN 13 :
Total Pages : 636 pages
Book Rating : 4.:/5 (89 download)
Download or read book A Study of Dopant Incorporation Into Gallium Arsenide Grown by Metal-orgnic Vapor Phase Epitaxy written by Joan Marie Redwing and published by . This book was released on 1994 with total page 636 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ruthanna Yusa DeJule
Publisher :
ISBN 13 :
Total Pages : 82 pages
Book Rating : 4.:/5 (227 download)
Download or read book Analysis of Electron Traps in Silicon and Gallium Arsenide by Deep-level Transient Spectroscopy written by Ruthanna Yusa DeJule and published by . This book was released on 1982 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt:
