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A Study Of Enhancement Mode Modulation Doped Field Effect Transistors On Lattice Matched Indium Phosphide Based Semiconductor Compounds
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Book Synopsis A Study of Enhancement-mode Modulation Doped Field Effect Transistors on Lattice Matched Indium Phosphide Based Semiconductor Compounds by : Aaditya Mahajan
Download or read book A Study of Enhancement-mode Modulation Doped Field Effect Transistors on Lattice Matched Indium Phosphide Based Semiconductor Compounds written by Aaditya Mahajan and published by . This book was released on 1996 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis DC and RF Characterization of Gallium Indium Arsenide/aluminum Indium Arsenide/indium Phosphide Modulation Doped Field Effect Transistors for Millimeter Wave Device Applications by : Lauren Fay Palmateer
Download or read book DC and RF Characterization of Gallium Indium Arsenide/aluminum Indium Arsenide/indium Phosphide Modulation Doped Field Effect Transistors for Millimeter Wave Device Applications written by Lauren Fay Palmateer and published by . This book was released on 1989 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Double-doped Double-strained Modulation Doped Field Effect Transistor 3D-SMODFET by : Glenn Harvey Martin
Download or read book Double-doped Double-strained Modulation Doped Field Effect Transistor 3D-SMODFET written by Glenn Harvey Martin and published by . This book was released on 1997 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modulation-doped Field-effect Transistors for Low Distortion Microwave Mixing Applications by : Eric W. Lin
Download or read book Modulation-doped Field-effect Transistors for Low Distortion Microwave Mixing Applications written by Eric W. Lin and published by . This book was released on 1994 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design Principles and Performance of Modulation-doped Field Effect Transistors for Low Noise Microwave Amplification by : Lovell H. Camnitz
Download or read book Design Principles and Performance of Modulation-doped Field Effect Transistors for Low Noise Microwave Amplification written by Lovell H. Camnitz and published by . This book was released on 1986 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modulation-doped Field Effect Transistors for High-power Microwave Applications by : Ronald Waldo Grundbacher
Download or read book Modulation-doped Field Effect Transistors for High-power Microwave Applications written by Ronald Waldo Grundbacher and published by . This book was released on 1997 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: The need for high-power, low-noise transistors operating at frequencies of 1GHz and above has accelerated over the past several years, because applications in consumer markets, including telecommunications products, have increased dramatically. Transistors in the silicon system are having difficulty providing the high-power, low-noise characteristics at operation above 1 GHz. Transistors based on InP and GaAs, which include HBTs, MESFETs, and HEMTs, have proven to be excellent devices and can provide high-power, low-noise capabilities at frequencies of 100 GHz and beyond. Issues of importance for high-power microwave transistors include breakdown mechanisms, linearity, and material selection.
Author :United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch Publisher : ISBN 13 : Total Pages :1080 pages Book Rating :4.E/5 ( download)
Book Synopsis Japanese Science and Technology, 1983-1984 by : United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch
Download or read book Japanese Science and Technology, 1983-1984 written by United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch and published by . This book was released on 1985 with total page 1080 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1989 with total page 1722 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Submicrometer-gate Indium Phosphide-based Field-effect Transistors for High-frequency Applications by : Jente Benedict Kuang
Download or read book Submicrometer-gate Indium Phosphide-based Field-effect Transistors for High-frequency Applications written by Jente Benedict Kuang and published by . This book was released on 1990 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modulation-doped Field-effect Transistors by : Heinrich Daembkes
Download or read book Modulation-doped Field-effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Monolithic Integration of Enhancement-and Depletion-mode High Electron Mobility Transistors for Low-power and High-speed Circuit Applications in the Lattice-matched Indium Phosphide Material System by : Aaditya Mahajan
Download or read book The Monolithic Integration of Enhancement-and Depletion-mode High Electron Mobility Transistors for Low-power and High-speed Circuit Applications in the Lattice-matched Indium Phosphide Material System written by Aaditya Mahajan and published by . This book was released on 1999 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modulation-doped Field-effect Transistors by : Heinrich Daembkes
Download or read book Modulation-doped Field-effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ceramic Abstracts by : American Ceramic Society
Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1997 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis International Aerospace Abstracts by :
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1989 with total page 932 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modulation Doped Field-Effect Transistors in Strained Layer Superlattices by : S. M. Bedair
Download or read book Modulation Doped Field-Effect Transistors in Strained Layer Superlattices written by S. M. Bedair and published by . This book was released on 1986 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the mm-wave device investigation the limitations imposed by parasitic elements upon high-frequency performance were investigated. It was determined that the high field domain that forms in the channel of field-effect type transistors presents a limitation to high frequency operation. The domain capacitance creates a complex pole in the unilateral gain that results in a 12 db/octave roll-off above the resonant frequency of the pole. The various factors that effect this pole have been investigated. Current FETs are limited to upper operation frequencies of about 150-160 GHz. The GaAs(1-y)P(y)-Ga(1-yInx)As material system is proposed for potential HEMT applications. This structure is made of strained layers that can be grown with y = 2x free from dislocations, and lattice matched to a GaAs substrate. HEMT devices fabricated in such structure have several potential advantages over the conventional AlGaAs-GaAs HEMT. First, the active layer is Ga(1-x)In(x)As instead of GaAs. Thus, the potential exists for higher room temperature mobilities with larger saturation velocities and a larger conduction band edge discontinuity. An advantage over the Ga(0.47)In(0.53)As-InP system is that the composition of the Ga(1-x)In(x)As in the proposed structure can be varied to optimize the HEMT performance, whereas the Ga(0.47)In(0.53)As has a fairly low bandgap for optimum FET devices.
Book Synopsis Modulation Doped Field Effect Transistors for Microwave Device Applications by : Norman C. Tien
Download or read book Modulation Doped Field Effect Transistors for Microwave Device Applications written by Norman C. Tien and published by . This book was released on 1993 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Bell Telephone Laboratories, inc. Libraries and Information Systems Center Publisher : ISBN 13 : Total Pages :586 pages Book Rating :4.3/5 (91 download)
Book Synopsis Bell Laboratories Talks and Papers by : Bell Telephone Laboratories, inc. Libraries and Information Systems Center
Download or read book Bell Laboratories Talks and Papers written by Bell Telephone Laboratories, inc. Libraries and Information Systems Center and published by . This book was released on 1984 with total page 586 pages. Available in PDF, EPUB and Kindle. Book excerpt:
