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Author :
Publisher :
ISBN 13 :
Total Pages : 854 pages
Book Rating : 4.3/5 (91 download)
Download or read book IBM Journal of Research and Development written by and published by . This book was released on 2002 with total page 854 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ted Kamins
Publisher : Springer Science & Business Media
ISBN 13 : 1461555779
Total Pages : 391 pages
Book Rating : 4.4/5 (615 download)
Download or read book Polycrystalline Silicon for Integrated Circuits and Displays written by Ted Kamins and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 391 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition presents much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon. By properly understanding the properties of polycrystalline silicon and their relation to the deposition conditions, polysilicon can be designed to ensure optimum device and integrated-circuit performance. Polycrystalline silicon has played an important role in integrated-circuit technology for two decades. It was first used in self-aligned, silicon-gate, MOS ICs to reduce capacitance and improve circuit speed. In addition to this dominant use, polysilicon is now also included in virtually all modern bipolar ICs, where it improves the basic physics of device operation. The compatibility of polycrystalline silicon with subsequent high-temperature processing allows its efficient integration into advanced IC processes. This compatibility also permits polysilicon to be used early in the fabrication process for trench isolation and dynamic random-access-memory (DRAM) storage capacitors. In addition to its integrated-circuit applications, polysilicon is becoming vital as the active layer in the channel of thin-film transistors in place of amorphous silicon. When polysilicon thin-film transistors are used in advanced active-matrix displays, the peripheral circuitry can be integrated into the same substrate as the pixel transistors. Recently, polysilicon has been used in the emerging field of microelectromechanical systems (MEMS), especially for microsensors and microactuators. In these devices, the mechanical properties, especially the stress in the polysilicon film, are critical to successful device fabrication. Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition is an invaluable reference for professionals and technicians working with polycrystalline silicon in the integrated circuit and display industries.
Author : Ted Kamins
Publisher : Springer Science & Business Media
ISBN 13 : 1461316812
Total Pages : 302 pages
Book Rating : 4.4/5 (613 download)
Download or read book Polycrystalline Silicon for Integrated Circuit Applications written by Ted Kamins and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor mance. As device performance improves, however, some of the proper ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili con also need to be better understood to minimize potential degradation of circuit behavior.
Author : Peter Ashburn
Publisher : John Wiley & Sons
ISBN 13 : 0470090731
Total Pages : 286 pages
Book Rating : 4.4/5 (7 download)
Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Author : Peter Ashburn
Publisher :
ISBN 13 :
Total Pages : 222 pages
Book Rating : 4.:/5 (51 download)
Download or read book Design and Realization of Bipolar Transistors written by Peter Ashburn and published by . This book was released on 1988-08-18 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
Author : B. Soerowirdjo
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (534 download)
Download or read book A Study of Bipolar Transistors with Polysilicon Emitters written by B. Soerowirdjo and published by . This book was released on 1983 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yuan Taur
Publisher : Cambridge University Press
ISBN 13 : 1108848052
Total Pages : 628 pages
Book Rating : 4.1/5 (88 download)
Download or read book Fundamentals of Modern VLSI Devices written by Yuan Taur and published by Cambridge University Press. This book was released on 2021-12-02 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.
Author : Michael Reisch
Publisher : Springer Science & Business Media
ISBN 13 : 364255900X
Total Pages : 671 pages
Book Rating : 4.6/5 (425 download)
Download or read book High-Frequency Bipolar Transistors written by Michael Reisch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1351834789
Total Pages : 321 pages
Book Rating : 4.3/5 (518 download)
Download or read book Fabrication of SiGe HBT BiCMOS Technology written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Author : Richard S. Muller
Publisher : John Wiley & Sons
ISBN 13 : 0471593982
Total Pages : 564 pages
Book Rating : 4.4/5 (715 download)
Download or read book Device Electronics for Integrated Circuits written by Richard S. Muller and published by John Wiley & Sons. This book was released on 2002-10-28 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt: Focusing specifically on silicon devices, the Third Edition of Device Electronics for Integrated Circuits takes students in integrated-circuits courses from fundamental physics to detailed device operation. Because the book focuses primarily on silicon devices, each topic can include more depth, and extensive worked examples and practice problems ensure that students understand the details.
Author : Siegfried Selberherr
Publisher : Springer Science & Business Media
ISBN 13 : 3709166578
Total Pages : 525 pages
Book Rating : 4.7/5 (91 download)
Download or read book Simulation of Semiconductor Devices and Processes written by Siegfried Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.
Author : Wai-Kai Chen
Publisher : CRC Press
ISBN 13 : 0203011503
Total Pages : 390 pages
Book Rating : 4.2/5 (3 download)
Download or read book VLSI Technology written by Wai-Kai Chen and published by CRC Press. This book was released on 2003-03-19 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: As their name implies, VLSI systems involve the integration of various component systems. While all of these components systems are rooted in semiconductor manufacturing, they involve a broad range of technologies. This volume of the Principles and Applications of Engineering series examines the technologies associated with VLSI systems, including
Author :
Publisher :
ISBN 13 :
Total Pages : 562 pages
Book Rating : 4.:/5 (319 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : BADIH. HUTTER EL-KAREH (LOU N.)
Publisher : Springer Nature
ISBN 13 : 3031591895
Total Pages : 563 pages
Book Rating : 4.0/5 (315 download)
Download or read book SILICON COMPONENTS AND PROCESSES SELF STUDY written by BADIH. HUTTER EL-KAREH (LOU N.) and published by Springer Nature. This book was released on 2024 with total page 563 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : A. Luque
Publisher : Springer
ISBN 13 : 940113622X
Total Pages : 1437 pages
Book Rating : 4.4/5 (11 download)
Download or read book Tenth E.C. Photovoltaic Solar Energy Conference written by A. Luque and published by Springer. This book was released on 2012-12-06 with total page 1437 pages. Available in PDF, EPUB and Kindle. Book excerpt: I have great pleasure in presenting the Proceedings of the 10th European Photovoltaic Solar Energy Conference held in Lisbon from 8 to 12 April 1991. These Proceedings contain all the scientific papers delivered at the Conference. The following is a short summary of the Conference activities. The Conference was opened by the Minister of Industry and Energy of Portugal, Eng. Luis Mira do Amaral. At the opening ceremony the Becquerel Prize, created by the Commission of the European Communities, was awarded to Professor Werner Bloss of the University of Stuttgart, and presented by Professor Philippe Bourdeau, Director at the Directorate-General for Science, Research and Development. The Becquerellecture delivered by Professor Bloss constituted the scientific opening to the conference. About 760 delegates from 53 countries presented around 350 contributions, 50 of them as plenary lectures; the contributions were selected among the many papers submitted, this time more strictly than ever before. Also a selected group of scientists were invited to deliver 15 review lectures, to provide an adequate context to the contributions to the Conference. A Symposium on Photovoltaics in Developing Countries, which was very well attended, took place as a parallel event. The Symposium provided an opportunity to hear not only experts of the industrialized countries, but also speakers from the countries where photovoltaics provides services of paramount value.
Author : Krzysztof Iniewski
Publisher : CRC Press
ISBN 13 : 1351833758
Total Pages : 442 pages
Book Rating : 4.3/5 (518 download)
Download or read book Radiation Effects in Semiconductors written by Krzysztof Iniewski and published by CRC Press. This book was released on 2018-09-03 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.
Author : ASM International
Publisher : ASM International
ISBN 13 : 1615030859
Total Pages : 456 pages
Book Rating : 4.6/5 (15 download)
Download or read book Istfa 2001 written by ASM International and published by ASM International. This book was released on 2001-01-01 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt:
