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A Novel Device Structure For Low Temperature Polysilicon Tfts With Controlled Gain Growth In Channel Regions
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Book Synopsis A Novel Device Structure for Low-Temperature Polysilicon TFTs With Controlled Gain Growth in Channel Regions by : Li-Jung Cheng
Download or read book A Novel Device Structure for Low-Temperature Polysilicon TFTs With Controlled Gain Growth in Channel Regions written by Li-Jung Cheng and published by . This book was released on 2000 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper we demonstrate a novel device structure of low-temperature polysilicon thin-film transistors (LTPS TFTs) for AMLCD applications with using excimer-laser crystallization (ELC). The device structure consists of a thin channel and a thick source/drain. This structure has its merit in the process of ELC and is capable of improving TFTs electrical characteristics. During excimer laser irradiation this kind of recessed structure is able to build up localized lateral thermal gradients in the regions near the steps and entice crystallization from the chiller/thick source/drain regions toward the hotter thin channels. Because of the development of crystallization process, the average field-effect mobility of the devices can be increased to about 350 cm(2)/V.s, and the on/off current ratios exceed eight orders. In addition to improvement of device performance, the process window of ELC is broadened with the recessed structure.
Book Synopsis Novel Processes and Structures for Low Temperature Fabrication of Integrated Circuit Devices by : Joanna T. Lai
Download or read book Novel Processes and Structures for Low Temperature Fabrication of Integrated Circuit Devices written by Joanna T. Lai and published by . This book was released on 2008 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1948 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Novel Low Temperature Polysilicon Thin-film Transistors for System-on-glass Large-area Microelectronic Applications by : Chunxiang Zhu
Download or read book Novel Low Temperature Polysilicon Thin-film Transistors for System-on-glass Large-area Microelectronic Applications written by Chunxiang Zhu and published by . This book was released on 2000 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Journal of the Physical Society of Japan by : Nihon Butsuri Gakkai
Download or read book Journal of the Physical Society of Japan written by Nihon Butsuri Gakkai and published by . This book was released on 1993 with total page 1146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis High-Performance Low-Temperature Polysilicon Thin-Film Transistors with Nano-wire Structure by : 黃柏鈞
Download or read book High-Performance Low-Temperature Polysilicon Thin-Film Transistors with Nano-wire Structure written by 黃柏鈞 and published by . This book was released on 2007 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Morphological and Electrical Variance in Polysilicon Thin Film Transistors Crystallized by Flash Lamp Annealing by : Glenn Packard
Download or read book Morphological and Electrical Variance in Polysilicon Thin Film Transistors Crystallized by Flash Lamp Annealing written by Glenn Packard and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This work is a wide-reaching study of the factors that impact the in-situ crystallization of thin films of amorphous silicon into low-temperature polycrystalline silicon (LTPS) by flash lamp annealing (FLA) on glass substrates, which is used to develop thin film transistors (TFTs) with an eye towards display applications. The body of research surrounding FLA LTPS is thus advanced by identifying several challenges towards industrial integration and exploring solutions involving device configuration, novel methods of dopant introduction and activation, and novel TFT material systems. It is unlikely that FLA will ever produce LTPS superior to the laser-annealing techniques currently dominating the market, but its significant improvements in throughput and roll-to-roll compatibility make it an attractive complementary technology. In this work, existing FLA LTPS TFT research is expanded into complementary metal-oxide-semiconductor (CMOS) logic to take advantage of the n- and p- channel compatibility of LTPS over competing amorphous oxide technology. A processing alternative is developed for scaling these devices down to current dimensions of liquid crystal display (LCD) transistor backplanes and then further improved by exploring a silicon ion self-implant to preamorphize the polycrystalline lattice structure, allowing enhanced dopant activation at temperatures compatible with thermally-fragile substrates. This method is also shown to be compatible with a self-aligned device configuration for ease of processing and reduced parasitic capacitance. Additionally, a new strategy for producing bottom-gate LTPS devices (a consistent challenge for laser-annealed LTPS) is presented by incorporating a transparent conductive oxide as a gate structure. The increased thermal mass provided by the bottom gate is harnessed to improve the impact of channel crystallization at lower pulse intensity, producing devices with extremely high channel mobility at low drain voltage. Monolayer Doping (MLD) is demonstrated to be compatible with FLA LTPS, utilizing a simultaneous anneal to both crystallize amorphous silicon and activate selectively self-assembled MLD-adhered dopants. MLD phosphorus n-channel TFTs are presented with activation on par with that of ultra-shallow MLD junctions on bulk silicon. Further, Gallium MLD is demonstrated for the first time, successfully producing p-channel TFTs with FLA. The material system of FLA-crystallized silicon on chromium, already well established in the micrometer-thick film range for PV applications, is given an in-depth investigation in the nanometer thin film range for TFT applications. A unique set of crystallization patterns and texture on the nanometer scale is revealed and characterized to determine the extent, cause, and impact of chromium redistribution in this material, which is also explored as a predictable and edge-directed morphology of FLA LTPS for a wide variety of device configurations. Finally, the individual advancements in this work are explored in many combinations in a wide multi-process study to determine their efficacy as techniques for producing FLA LTPS TFTs. Using this broad information, the field of flash-lamp crystallized TFTs is advanced and several challenges are more specifically identified as a foundation for future research."--Abstract.
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2005 with total page 858 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Development and Fabrication of Vertical Thin Film Transistors Based on Low Temperature Polycrystalline Silicon Technology by : Peng Zhang
Download or read book Development and Fabrication of Vertical Thin Film Transistors Based on Low Temperature Polycrystalline Silicon Technology written by Peng Zhang and published by . This book was released on 2012 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work deals with the development of vertical thin film transistors (VTFTs) via the fabrication processes and the analysis of the electrical characteristics. The low-temperature (T ≤ 600°C) polycrystalline silicon technology is adopted in the fabrication processes. The first step of the work consists in the fabrication and characterization of VTFTs obtained by rotating the lateral thin film transistors (LTFTs) 90°. The feasibility of VTFTs fabrication is validated with an ION/IOFF ratio of about 103, and it is analyzed that the large overlapping area between source and drain leads to a large off-current IOFF. The second step of the work lies in the partial suppression of the large overlapping area, and therefore, an ION/IOFF ratio of almost 105 is obtained. The third step of the work deals with the proposal of a new VTFT structure that absolutely eliminates the overlapping area. Different improvements have been made on this new VTFT structure, especially by optimization of the following parameters: the active layer thickness, type and thickness of the barrier layer, and the geometric dimension. The optimized transistor highlights an ION/IOFF ratio of higher than 105 with a reduced off-current IOFF, high stability and good reproducibility. P and N-type VTFTs have also been fabricated and showed symmetrical electrical characteristics; they are thus suitable for CMOS-like VTFT applications.
Download or read book Moody's International Manual written by and published by . This book was released on 1998 with total page 1998 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modeling of Low-Temperature Polysilicon Thin-Film Transistors by : 邱柏倫
Download or read book Modeling of Low-Temperature Polysilicon Thin-Film Transistors written by 邱柏倫 and published by . This book was released on 2019 with total page 47 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low Temperature Polysilicon Thin Film Transistors in Advanced Display Technologies by :
Download or read book Low Temperature Polysilicon Thin Film Transistors in Advanced Display Technologies written by and published by . This book was released on 2000 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this final project report, we detail the work completed in developing a polysilicon thin film transistor (TFT) technology that was successfully applied in fabricating a working VGA Active Matrix Organic Light Emitting Diode (AMOLED) display prototype. Using the high throughput, low cost method of Rapid Thermal Processing (RTP), we achieved glass compatible crystallization temperatures of polysilicon. We identify that RTP results in superior TFT performance uniformity, which is critical for fabrication of AMOLEDs. We successfully developed and integrated novel microelectronic processes and techniques while fabricating AMOLED displays, culminating in the demonstration of a VGA AMOLED prototype display operated at a brightness of 101 nits. Using our high throughput, low cost process polysilicon TFT technology, we fabricated display driver circuits, including low temperature shift registers that run at clock frequencies as high as 20 MHz. Finally, several processing issues that were investigated in order to improve the performance of AMOLED displays are described. This includes work on low temperature silicides for TFTs, a novel hillock-free aluminum metallization, and the ability of this aluminum metallization to form ohmic contacts to indium tin oxide.
Book Synopsis Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards by :
Download or read book Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards written by and published by . This book was released on 2006 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Introduction to Thin Film Transistors by : S.D. Brotherton
Download or read book Introduction to Thin Film Transistors written by S.D. Brotherton and published by Springer Science & Business Media. This book was released on 2013-04-16 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.
Book Synopsis Advanced MOS Device Physics by : Norman Einspruch
Download or read book Advanced MOS Device Physics written by Norman Einspruch and published by Elsevier. This book was released on 2012-12-02 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.
