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A Doping And Photoluminescence Study Of Gallium Nitride Grown By Metalorganic Chemical Vapor Deposition
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Book Synopsis A doping and photoluminescence study of gallium nitride grown by metalorganic chemical vapor deposition by : Christopher James Eiting
Download or read book A doping and photoluminescence study of gallium nitride grown by metalorganic chemical vapor deposition written by Christopher James Eiting and published by . This book was released on 1996 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Study of GaN-based Materials for Light-emitting Applications by :
Download or read book Study of GaN-based Materials for Light-emitting Applications written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this study was to explore the possibility of fabricating phosphor-free white-emitting LED's based in the gallium nitride material system. The structures were to be grown using metal-organic chemical vapor deposition (MOCVD). Toward this end, a Thomas Swan Scientific close-coupled showerhead reactor was installed. The first experimental step in this project was the optimization of nominally undoped GaN. This was achieved successfully, as smooth, non-compensated, optically-active films were demonstrated. Additionally, a full on- and off-axis x-ray diffraction study showed that the crystal quality of this material compared favorably to that of published standards. Successful n- and p-type doping of GaN were also demonstrated. Device-worthy mobility and carrier concentration values were demonstrated. Atomic force microscopy of n-type material verified that the films was sufficiently smooth as to serve as a layer upon which active-layer quantum wells could be grown. Photoluminescence of both n- and p-type material was examined as well. An extensive indium gallium nitride growth study was carried out. The effects of several growth parameters on emission characteristics were presented. PL emission wavelengths as high as 561nm were demonstrated. The issues of uniformity and indium platelet formation were also addressed. This InGaN experimental work was complemented with a series of calculations which gave the expected emission wavelength of an InGaND aN quantum well structure based on In content and well width. Strain, the quantum size effect, and the quantum-confined Stark effect were all factored into these calculations in order to study their individual contributions to emission wavelength values. This work concluded with an examination of white device structure and fabrication. Both two- and three-color devices were considered. Monochromtic devices emitting in the green and yellow were fabricated. The yellow device, emitting at 575nm, yielded the lo.
Book Synopsis Gallium Nitride and Related Materials by :
Download or read book Gallium Nitride and Related Materials written by and published by . This book was released on 1997 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride and Related Materials: Volume 395 by : F. A. Ponce
Download or read book Gallium Nitride and Related Materials: Volume 395 written by F. A. Ponce and published by . This book was released on 1996-09-04 with total page 1008 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.
Book Synopsis Synthesis of Compound Semiconducting Materials and Device Applications; Gallium Nitride Light Emitting Diodes by : Stanford University. Center for Materials Research
Download or read book Synthesis of Compound Semiconducting Materials and Device Applications; Gallium Nitride Light Emitting Diodes written by Stanford University. Center for Materials Research and published by . This book was released on 1973 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: The synthesis and characterization of hetero-epitaxial gallium nitride (GaN) films were undertaken with particular reference to the phenomenon of light emission. Gallium nitride was grown by the chemical vapor deposition technique using sapphire substrates. Techniques for characterization included optical, scanning electron, and transmission electron microscopy and measurements of various electrical and optical properties of the films. The thin films of GaN were doped during growth with zinc and magnesium to form n-i junctions. Such material provided the basis for the fabrication of m-i-n light-emitting diodes, which emitted light in the high-energy violet region of the visible spectrum with Mg doping and green light with Zn doping. (Modified author abstract).
Book Synopsis Proceedings of the First Symposium on III-V Nitride Materials and Processes by : T. D. Moustakas
Download or read book Proceedings of the First Symposium on III-V Nitride Materials and Processes written by T. D. Moustakas and published by The Electrochemical Society. This book was released on 1996 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Studies of Gallium Nitride Grown on Silicon Substrate by Metalorganic Chemical Vapor Deposition by : Jingli Chen
Download or read book Studies of Gallium Nitride Grown on Silicon Substrate by Metalorganic Chemical Vapor Deposition written by Jingli Chen and published by . This book was released on 2000 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Gallium Nitride Electroluminescent Devices Co-doped with Rare Earth and Silicon by : Wang Rui
Download or read book Fabrication and Characterization of Gallium Nitride Electroluminescent Devices Co-doped with Rare Earth and Silicon written by Wang Rui and published by . This book was released on 2009 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare Earth (RE) doped III-nitrides are being widely investigated for potential applications in optical communication and displays, due to the wide and direct energy bandgap of GaN resulting in low thermal quenching of RE ion sharp emission from ultraviolet (UV) through visible to infrared (IR) region. The UC Nanolab has been conducting RE doped GaN research for more than 10 years and many achievements were obtained, ranging from material growth to device fabrication. This dissertation studied RE emission in GaN material, focusing on the effects of electronic impurity (Si) co-doping on RE luminescence. Advanced RE doped GaN electroluminescent devices (ELDs) were also designed and fabricated. Detailed device characterization was carried out and the effect of co-dopant was investigated. Eu-doped GaN thin films were grown on sapphire wafers by molecular beam epitaxy (MBE) technique and the growth conditions were optimized for the strongest Eu luminescence. It was found that GaN thin film quality and Eu doping concentration mutually affected Eu luminescence. High quality GaN:Eu thin films were grown under Ga rich condition (III/V>1), but the strongest Eu luminescence was obtained under slightly N rich condition (III/V1). The optimum Eu doping concentration is ~0.1-1.0at.%, depending on the GaN:Eu thin film quality. Higher growth temperature (750°C) was also found to enhance Eu luminescence intensity (~10x) and efficiency (~30x). The effect of Si co-doping in GaN:RE thin films was investigated. Eu photoluminescence (PL) was enhanced ~5-10x by moderate Si co-doping (~0.05at.%) mostly due to the increase of Eu PL lifetime, but decreased very fast at high Si co-doping concentration (>0.08at.%). The increase of Eu PL lifetime is possibly due to the incorporation of Si uniformly distributing Eu ions and shielding Eu-Eu interactions. Combined with the increase in excitation cross section and carrier flux, there is a significant enhancement on Eu PL intensity. The electrical properties of GaN:RE thin films were changed from high resistive to weakly n-type due to increased electron concentration introduced by Si co-doping. GaN:RE ELDs were fabricated and the electrical and optical properties were studied by I-V and electroluminescence (EL) measurements. A hetero-junction PIN structure was designed on n-GaN:Si/GaN:RE/p-Si, employing p-Si substrates as p-type conductive layer. RE ions EL emission was found to be much stronger under forward bias than under reverse bias. The Si co-doping was also studied in GaN:RE ELDs. It was found that Er EL had strong visible & IR emission under forward bias, while there is little or no emission under reverse bias. A pn hetero-junction structure formed between p-Si and n-GaN:(Si, Er) layers was proposed to be responsible for the emission control. GaN:(Si, Eu) AC thin film ELDs were also fabricated and shown that the Si co-doping increased the Eu ions emission intensity and efficiency.
Book Synopsis The processing and characterization of gallium nitride devices grown by metalorganic chemical vapor deposition by : Bryan Stephen Shelton
Download or read book The processing and characterization of gallium nitride devices grown by metalorganic chemical vapor deposition written by Bryan Stephen Shelton and published by . This book was released on 1997 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Handbook of GaN Semiconductor Materials and Devices by : Wengang (Wayne) Bi
Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 775 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1948 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Technology of Gallium Nitride Crystal Growth by : Dirk Ehrentraut
Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Book Synopsis Selective Carbon Doping in Gallium Arsenide Grown by Metalorganic Chemical Vapor Deposition by : Hyukju Jay Moon
Download or read book Selective Carbon Doping in Gallium Arsenide Grown by Metalorganic Chemical Vapor Deposition written by Hyukju Jay Moon and published by . This book was released on 1990 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Cole W. Litton Publisher :SPIE-International Society for Optical Engineering ISBN 13 :9780819461636 Total Pages :322 pages Book Rating :4.4/5 (616 download)
Book Synopsis Gallium Nitride Materials and Devices by : Cole W. Litton
Download or read book Gallium Nitride Materials and Devices written by Cole W. Litton and published by SPIE-International Society for Optical Engineering. This book was released on 2006 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.
Book Synopsis Rare Earth Doped Gallium Nitride Powders by : Tiju Thomas
Download or read book Rare Earth Doped Gallium Nitride Powders written by Tiju Thomas and published by . This book was released on 2011 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Nitride is a III-V compound semiconductor that has attracted a lot of interest among both applied and basic researchers because of its potential applications in optoelectronic, high power and high frequency devices. However, many questions about the material remain unanswered. In this thesis, we will present our investigation of GaN. We will first describe an ammonothermal method for the synthesis of undoped and rare earth doped GaN powders. Using careful observations and calculations, we show that the powder growth is primarily a liquid phase phenomenon. We also present a chemical method to achieve luminescence enhancement in ammonothermally grown Eu:GaN powders. Based on arguments drawn from the surface chemistry and XRD of these samples, we conclude that elimination of dark mixed oxides from the powder results in the observed luminescence enhancement. We also demonstrate a nano Eu:GaN synthesis process using a simple mechanical topdown method. The optical properties of nano Eu:GaN prepared in this manner is comparable to that of the bulk material. Based on a similar mechanical process we synthesized nano Er:GaN powders that emit in the C band (1.55 m). The mechanism involved in the luminescence of rare earth doped GaN is investigated using thermal quenching and high pressure studies. Our results suggest that an exciton bound to rare earth structured isovalent impurity (RESI) is responsible for luminescence in these materials. Luminescence quenching and pressure dependent photoluminescence enhancement in RE:GaN can be explained based on this model. Our results clearly suggest that thermal quenching can be undone by application of pressure. These powders are discovered to be fairly radiation hard as well. In the last section of this thesis, we will present an electrophoretic technique to deposit nano GaN on a fluorine doped tin oxide coated glass substrate. The technique can be easily adapted to grow layered structures that can find application in optical fibers and as a laser gain medium. Preliminary results for highly densified GaN ceramic obtained using a hot-press process are discussed. These results suggest that further densification is necessary for achieving a completely transparent GaN ceramic made out of ammonothermally synthesized GaN powders.
Book Synopsis Porous Silicon Carbide and Gallium Nitride by : Randall M. Feenstra
Download or read book Porous Silicon Carbide and Gallium Nitride written by Randall M. Feenstra and published by John Wiley & Sons. This book was released on 2008-04-15 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more
Book Synopsis State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXV) by : P. C. Chang
Download or read book State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXV) written by P. C. Chang and published by The Electrochemical Society. This book was released on 2001 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
