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Author :
Publisher :
ISBN 13 :
Total Pages : 166 pages
Book Rating : 4.:/5 (31 download)
Download or read book ARFTG Conference Digest written by and published by . This book was released on 2002 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book "32nd ARFTG Conference Digest". written by and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Giovanni Ghione
Publisher : Cambridge University Press
ISBN 13 : 1107170273
Total Pages : 599 pages
Book Rating : 4.1/5 (71 download)
Download or read book Microwave Electronics written by Giovanni Ghione and published by Cambridge University Press. This book was released on 2018 with total page 599 pages. Available in PDF, EPUB and Kindle. Book excerpt: A self-contained guide to microwave electronics, covering passive and active components, linear, low-noise and power amplifiers, microwave measurements, and CAD techniques. It is the ideal text for graduate and senior undergraduate students taking courses in microwave and radio-frequency electronics, as well as professional microwave engineers.
Author : Peter Aaen
Publisher : Cambridge University Press
ISBN 13 : 113946812X
Total Pages : 375 pages
Book Rating : 4.1/5 (394 download)
Download or read book Modeling and Characterization of RF and Microwave Power FETs written by Peter Aaen and published by Cambridge University Press. This book was released on 2007-06-25 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Author : Lynn Kirby
Publisher :
ISBN 13 :
Total Pages : 776 pages
Book Rating : 4.:/5 (318 download)
Download or read book 1995 IEEE MTT-S International Microwave Symposium Digest written by Lynn Kirby and published by . This book was released on 1995 with total page 776 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Peter H. Ladbrooke
Publisher : Artech House
ISBN 13 : 1630818690
Total Pages : 480 pages
Book Rating : 4.6/5 (38 download)
Download or read book Nonlinear Design: FETs and HEMTs written by Peter H. Ladbrooke and published by Artech House. This book was released on 2021-11-30 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages and currents are time-varying, as they must be for these devices to have any practical use, the model progressively fails for higher specification circuits. This book shows how to reform the standard model to render it fully compliant with the way FETs and HEMTs actually function, thus rendering it valid dynamically. Proof-of-principle is demonstrated for several practical circuits, including a frequency doubler and amplifiers with demanding performance criteria. Methods for extracting both the reformulated model and the standard model are described, including a scheme for re-constructing from S-parameters the bias-dependent dynamic (or RF) I(V) characteristics along which devices work in real-world applications, and as needed for the design of nonlinear circuits using harmonic-balance and time-domain simulators. The book includes a historical review of how variations on the standard model theme evolved, leading up to one of the most widely used—the Angelov (or Chalmers) model.
Author : British Library. Document Supply Centre
Publisher :
ISBN 13 :
Total Pages : 836 pages
Book Rating : 4.F/5 ( download)
Download or read book Index of Conference Proceedings written by British Library. Document Supply Centre and published by . This book was released on 2000 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 726 pages
Book Rating : 4.3/5 (91 download)
Download or read book Conference Proceedings written by and published by . This book was released on 1997 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
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ISBN 13 :
Total Pages : 522 pages
Book Rating : 4.3/5 (91 download)
Download or read book Proceedings of the ... Midwest Symposium on Circuits and Systems written by and published by . This book was released on 2001 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : James Joseph Kempf
Publisher :
ISBN 13 :
Total Pages : 490 pages
Book Rating : 4.3/5 (91 download)
Download or read book Time-domain Characterization of Transistors written by James Joseph Kempf and published by . This book was released on 1999 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Narendra Kumar
Publisher : Artech House
ISBN 13 : 1608078329
Total Pages : 365 pages
Book Rating : 4.6/5 (8 download)
Download or read book Distributed Power Amplifiers for RF and Microwave Communications written by Narendra Kumar and published by Artech House. This book was released on 2015-06-01 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new resource presents readers with all relevant information and comprehensive design methodology of wideband amplifiers. This book specifically focuses on distributed amplifiers and their main components, and presents numerous RF and microwave applications including well-known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. A great resource for practicing designers and engineers, this book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles.
Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Author : Vikram Kumar
Publisher :
ISBN 13 : 9780819445001
Total Pages : 812 pages
Book Rating : 4.4/5 (45 download)
Download or read book Physics of Semiconductor Devices written by Vikram Kumar and published by . This book was released on 2002 with total page 812 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Steve Marsh (Ph. D.)
Publisher : Artech House Publishers
ISBN 13 :
Total Pages : 392 pages
Book Rating : 4.3/5 (97 download)
Download or read book Practical MMIC Design written by Steve Marsh (Ph. D.) and published by Artech House Publishers. This book was released on 2006 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: How do you say hello in Arabic? Explore the pages of this Arabic English picture dictionary to learn new words and phrases. Colorful photographs and simple labels make learning Arabic easy.
Author : Vitaliy Zhurbenko
Publisher : BoD – Books on Demand
ISBN 13 : 9533070870
Total Pages : 502 pages
Book Rating : 4.5/5 (33 download)
Download or read book Advanced Microwave Circuits and Systems written by Vitaliy Zhurbenko and published by BoD – Books on Demand. This book was released on 2010-04-01 with total page 502 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is based on recent research work conducted by the authors dealing with the design and development of active and passive microwave components, integrated circuits and systems. It is divided into seven parts. In the first part comprising the first two chapters, alternative concepts and equations for multiport network analysis and characterization are provided. A thru-only de-embedding technique for accurate on-wafer characterization is introduced. The second part of the book corresponds to the analysis and design of ultra-wideband low- noise amplifiers (LNA).
Author :
Publisher :
ISBN 13 :
Total Pages : 1352 pages
Book Rating : 4.:/5 (31 download)
Download or read book IEICE Transactions on Electronics written by and published by . This book was released on 1999 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Farid Medjdoub
Publisher : MDPI
ISBN 13 : 3036505660
Total Pages : 242 pages
Book Rating : 4.0/5 (365 download)
Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
