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2017 29th International Symposium On Power Semiconductor Devices And Ic S Ispsd
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Book Synopsis 2017 29th International Symposium on Power Semiconductor Devices and IC S (ISPSD) by : IEEE Staff
Download or read book 2017 29th International Symposium on Power Semiconductor Devices and IC S (ISPSD) written by IEEE Staff and published by . This book was released on 2017-05-28 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ISPSD is the premier forum for technical discussion in all areas of power semiconductor devices and power integrated circuits
Book Synopsis Conference Proceedings of 2022 2nd International Joint Conference on Energy, Electrical and Power Engineering by : Cungang Hu
Download or read book Conference Proceedings of 2022 2nd International Joint Conference on Energy, Electrical and Power Engineering written by Cungang Hu and published by Springer Nature. This book was released on 2023-08-02 with total page 1326 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book will be a collection of the conference manuscripts presented at the 2022 2nd International Joint Conference on Energy, Electrical and Power Engineering covering new and renewable energy, electrical and power engineering. It is expected to report the latest technological developments in the fields developed by academic researchers and industrial practitioners. The application and dissemination of these technologies will benefit the research community, as new research directions are becoming increasingly interdisciplinary, requiring researchers from different research areas to come together and share ideas. It will also benefit the electrical engineering and energy industry, as we are now experiencing a new wave of industrial revolution, i.e. the electrification, intelligentisation and digitalisation of our transport, manufacturing processes and way of thinking.
Book Synopsis Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs by :
Download or read book Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs written by and published by . This book was released on 2001 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Highly Integrated Gate Drivers for Si and GaN Power Transistors by : Achim Seidel
Download or read book Highly Integrated Gate Drivers for Si and GaN Power Transistors written by Achim Seidel and published by Springer Nature. This book was released on 2021-03-31 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.
Author :Ont.) International Symposium on Power Semiconductor Devices and ICs (11th: 1999 : Toronto Publisher : ISBN 13 :9780780352919 Total Pages :359 pages Book Rating :4.3/5 (529 download)
Book Synopsis ISPSD '99 by : Ont.) International Symposium on Power Semiconductor Devices and ICs (11th: 1999 : Toronto
Download or read book ISPSD '99 written by Ont.) International Symposium on Power Semiconductor Devices and ICs (11th: 1999 : Toronto and published by . This book was released on 1999 with total page 359 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs by :
Download or read book Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs written by and published by . This book was released on 2005 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ISPSD '94 written by Wolfgang Fichtner and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Wide Bandgap Power Semiconductor Packaging by : Katsuaki Suganuma
Download or read book Wide Bandgap Power Semiconductor Packaging written by Katsuaki Suganuma and published by Woodhead Publishing. This book was released on 2018-05-28 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic. - Examines the key challenges of wide bandgap power semiconductor packaging at various levels, including materials, components and device performance - Provides the latest research on potential solutions, with an eye towards the end goal of system integration - Discusses key problems, such as thermal management, noise reduction, challenges in interconnects and substrates
Book Synopsis Wide Bandgap Based Devices by : Farid Medjdoub
Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Book Synopsis Proceedings of the 6th International Symposium on Power Semiconductor Devices & ICs by : Wolfgang Fichtner
Download or read book Proceedings of the 6th International Symposium on Power Semiconductor Devices & ICs written by Wolfgang Fichtner and published by . This book was released on 1994 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Power Semiconductor Devices and ICs (ISPSD), 2000 by : IEEE Electron Devices Society
Download or read book Power Semiconductor Devices and ICs (ISPSD), 2000 written by IEEE Electron Devices Society and published by IEEE Standards Office. This book was released on 2000 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Short Circuit Requirements of Power Converters based upon Wide-Bandgap Semiconductors by : Douglas Pappis
Download or read book Short Circuit Requirements of Power Converters based upon Wide-Bandgap Semiconductors written by Douglas Pappis and published by BoD – Books on Demand. This book was released on 2021-01-01 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: In power electronics designs, the evaluation and prediction of potential fault conditions on semiconductors is essential for achieving safe operation and reliability, being short circuit (SC) one of the most probable and destructive failures. Recent improvements on Wide-Bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium nitrite (GaN) enable power electronic designs with outstanding performance, reshaping the power electronics landscape. In comparison to Silicon (Si), SiC and GaN power semiconductors physically present smaller chip areas, higher maximum internal electric fields, and higher current densities. Such characteristics yield a much faster rise of the devices’ internal temperatures, worsening their SC performance. In this way, this dissertation consists of a comprehensive investigation about SC on SiC MOSFETs, GaN HEMT, and GaN E-HEMT transistors, as well as contextualizing their particularities on SC performance by comparison with that of Si IBGTs. Moreover, an investigation towards how to prevent SC occurrences besides a review of available SC protection methods is presented.
Book Synopsis Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs by : Muhammed Ayman Shibib
Download or read book Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs written by Muhammed Ayman Shibib and published by . This book was released on 1991 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Springer Handbook of Semiconductor Devices by : Massimo Rudan
Download or read book Springer Handbook of Semiconductor Devices written by Massimo Rudan and published by Springer Nature. This book was released on 2022-11-10 with total page 1680 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Download or read book ISPSD '93 written by Richard K. Williams and published by . This book was released on 1993 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :IEEE Electron Devices Society Publisher :Institute of Electrical & Electronics Engineers(IEEE) ISBN 13 : Total Pages :372 pages Book Rating :4.:/5 (318 download)
Book Synopsis ISPSD '92 by : IEEE Electron Devices Society
Download or read book ISPSD '92 written by IEEE Electron Devices Society and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1992 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Power Electronics in Renewable Energy Systems and Smart Grid by : Bimal K. Bose
Download or read book Power Electronics in Renewable Energy Systems and Smart Grid written by Bimal K. Bose and published by John Wiley & Sons. This book was released on 2019-06-27 with total page 705 pages. Available in PDF, EPUB and Kindle. Book excerpt: The comprehensive and authoritative guide to power electronics in renewable energy systems Power electronics plays a significant role in modern industrial automation and high- efficiency energy systems. With contributions from an international group of noted experts, Power Electronics in Renewable Energy Systems and Smart Grid: Technology and Applications offers a comprehensive review of the technology and applications of power electronics in renewable energy systems and smart grids. The authors cover information on a variety of energy systems including wind, solar, ocean, and geothermal energy systems as well as fuel cell systems and bulk energy storage systems. They also examine smart grid elements, modeling, simulation, control, and AI applications. The book's twelve chapters offer an application-oriented and tutorial viewpoint and also contain technology status review. In addition, the book contains illustrative examples of applications and discussions of future perspectives. This important resource: Includes descriptions of power semiconductor devices, two level and multilevel converters, HVDC systems, FACTS, and more Offers discussions on various energy systems such as wind, solar, ocean, and geothermal energy systems, and also fuel cell systems and bulk energy storage systems Explores smart grid elements, modeling, simulation, control, and AI applications Contains state-of-the-art technologies and future perspectives Provides the expertise of international authorities in the field Written for graduate students, professors in power electronics, and industry engineers, Power Electronics in Renewable Energy Systems and Smart Grid: Technology and Applications offers an up-to-date guide to technology and applications of a wide-range of power electronics in energy systems and smart grids.
