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Author :
Publisher :
ISBN 13 : 9781479943760
Total Pages : 416 pages
Book Rating : 4.9/5 (437 download)
Download or read book 2014 44th European Solid State Device Research Conference (ESSDERC 2014) written by and published by . This book was released on 2014 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : IEEE Staff
Publisher :
ISBN 13 : 9781479943753
Total Pages : pages
Book Rating : 4.9/5 (437 download)
Download or read book 2014 44th European Solid State Device Research Conference (ESSDERC) written by IEEE Staff and published by . This book was released on 2014-09-22 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid state devices and circuits The increasing level of integration for system on chip design made available by advances in silicon technology is, more than ever before, calling for a deeper interaction among technologists, device experts, IC designers, and system designers While keeping separate Technical Program Committees, ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both communities Attendees registered for either conference are encouraged to attend any of the scheduled parallel sessions, regardless to which conference they belong
Author :
Publisher :
ISBN 13 : 9781479943784
Total Pages : pages
Book Rating : 4.9/5 (437 download)
Download or read book Solid State Device Research Conference (ESSDERC), 2014 44th European written by and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ESSDERC 2014 written by and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Chinmay K. Maiti
Publisher : CRC Press
ISBN 13 : 1000638111
Total Pages : 314 pages
Book Rating : 4.0/5 (6 download)
Download or read book Fabless Semiconductor Manufacturing written by Chinmay K. Maiti and published by CRC Press. This book was released on 2022-11-17 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals with 3D nanodevices such as nanowire and nanosheet transistors at 7 nm and smaller technology nodes. It discusses technology computer-aided design (TCAD) simulations of stress- and strain-engineered advanced semiconductor devices, including III-nitride and RF FDSOI CMOS, for flexible and stretchable electronics. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including fabless intelligent manufacturing. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. In order to extend the role of TCAD in the More-than-Moore era, the design issues related to strain engineering for flexible and stretchable electronics have been introduced for the first time.
Author : Shunri Oda
Publisher : CRC Press
ISBN 13 : 1482228688
Total Pages : 288 pages
Book Rating : 4.4/5 (822 download)
Download or read book Nanoscale Silicon Devices written by Shunri Oda and published by CRC Press. This book was released on 2018-09-03 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.
Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Author : Shubham Tayal
Publisher : John Wiley & Sons
ISBN 13 : 1394167628
Total Pages : 325 pages
Book Rating : 4.3/5 (941 download)
Download or read book Advanced Ultra Low-Power Semiconductor Devices written by Shubham Tayal and published by John Wiley & Sons. This book was released on 2023-10-30 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: ADVANCED ULTRA LOW-POWER SEMICONDUCTOR DEVICES Written and edited by a team of experts in the field, this important new volume broadly covers the design and applications of metal oxide semiconductor field effect transistors. This outstanding new volume offers a comprehensive overview of cutting-edge semiconductor components tailored for ultra-low power applications. These components, pivotal to the foundation of electronic devices, play a central role in shaping the landscape of electronics. With a focus on emerging low-power electronic devices and their application across domains like wireless communication, biosensing, and circuits, this book presents an invaluable resource for understanding this dynamic field. Bringing together experts and researchers from various facets of the VLSI domain, the book addresses the challenges posed by advanced low-power devices. This collaborative effort aims to propel engineering innovations and refine the practical implementation of these technologies. Specific chapters delve into intricate topics such as Tunnel FET, negative capacitance FET device circuits, and advanced FETs tailored for diverse circuit applications. Beyond device-centric discussions, the book delves into the design intricacies of low-power memory systems, the fascinating realm of neuromorphic computing, and the pivotal issue of thermal reliability. Authors provide a robust foundation in device physics and circuitry while also exploring novel materials and architectures like transistors built on pioneering channel/dielectric materials. This exploration is driven by the need to achieve both minimal power consumption and ultra-fast switching speeds, meeting the relentless demands of the semiconductor industry. The book’s scope encompasses concepts like MOSFET, FinFET, GAA MOSFET, the 5-nm and 7-nm technology nodes, NCFET, ferroelectric materials, subthreshold swing, high-k materials, as well as advanced and emerging materials pivotal for the semiconductor industry’s future.
Author : Sorin Cristoloveanu
Publisher : Elsevier
ISBN 13 : 0128231653
Total Pages : 386 pages
Book Rating : 4.1/5 (282 download)
Download or read book Fully Depleted Silicon-On-Insulator written by Sorin Cristoloveanu and published by Elsevier. This book was released on 2021-08-04 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully Depleted Silicon-On-Insulator provides an in-depth presentation of the fundamental and pragmatic concepts of this increasingly important technology. There are two main technologies in the marketplace of advanced CMOS circuits: FinFETs and fully depleted silicon-on-insulators (FD-SOI). The latter is unchallenged in the field of low-power, high-frequency, and Internet-of-Things (IOT) circuits. The topic is very timely at research and development levels. Compared to existing books on SOI materials and devices, this book covers exhaustively the FD-SOI domain. Fully Depleted Silicon-On-Insulator is based on the expertise of one of the most eminent individuals in the community, Dr. Sorin Cristoloveanu, an IEEE Andrew Grove 2017 award recipient "For contributions to silicon-on-insulator technology and thin body devices." In the book, he shares key insights on the technological aspects, operation mechanisms, characterization techniques, and most promising emerging applications. Early praise for Fully Depleted Silicon-On-Insulator "It is an excellent written guide for everyone who would like to study SOI deeply, specially focusing on FD-SOI." --Dr. Katsu Izumi, Formerly at NTT Laboratories and then at Osaka Prefecture University, Japan "FDSOI technology is poised to catch an increasingly large portion of the semiconductor market. This book fits perfectly in this new paradigm [...] It covers many SOI topics which have never been described in a book before." --Professor Jean-Pierre Colinge, Formerly at TSMC and then at CEA-LETI, Grenoble, France "This book, written by one of the true experts and pioneers in the silicon-on-insulator field, is extremely timely because of the growing footprint of FD-SOI in modern silicon technology, especially in IoT applications. Written in a delightfully informal style yet comprehensive in its coverage, the book describes both the device physics underpinning FD-SOI technology and the cutting-edge, perhaps even futuristic devices enabled by it." --Professor Alexander Zaslavsky, Brown University, USA "A superbly written book on SOI technology by a master in the field." --Professor Yuan Taur, University of California, San Diego, USA "The author is a world-top researcher of SOI device/process technology. This book is his masterpiece and important for the FD-SOI archive. The reader will learn much from the book." --Professor Hiroshi Iwai, National Yang Ming Chiao Tung University, Taiwan From the author "It is during our global war against the terrifying coalition of corona and insidious computer viruses that this book has been put together. Continuous enlightenment from FD-SOI helped me cross this black and gray period. I shared a lot of myself in this book. The rule of the game was to keep the text light despite the heavy technical content. There are even tentative FD-SOI hieroglyphs on the front cover, composed of curves discussed in the book." Written by a top expert in the silicon-on-insulator community and IEEE Andrew Grove 2017 award recipient Comprehensively addresses the technology aspects, operation mechanisms and electrical characterization techniques for FD-SOI devices Discusses FD-SOI’s most promising device structures for memory, sensing and emerging applications
Author : John Reuben
Publisher : John Reuben
ISBN 13 : 3000778489
Total Pages : 163 pages
Book Rating : 4.0/5 (7 download)
Download or read book Resistive RAM and Peripheral Circuitry written by John Reuben and published by John Reuben. This book was released on 2024-05-18 with total page 163 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is written as an introductory textbook on Resistive Random Access Memory (ReRAM). ReRAM is a prominent emerging memory among other competing Non-Volatile Memories (NVM) seeking to replace flash memory. This book is based on the author's peer-reviewed research conducted at the Chair of Computer Architecture, FAU, Germany. Referring to his research and the most relevant research from the literature, the author presents the developments in this field concisely. The purpose is to clarify basic concepts and introduce the reader to ReRAM with an emphasis on circuit design. Hence, this book is written for university students considering a career in the semiconductor industry. Since the author's research was conducted in collaboration with a silicon foundry, hardware engineers will find this book practical and industry-relevant. Researchers in the field of In-Memory Computing will also benefit from this book since the NVM array is the basic substrate for such computing paradigms. This three-part book condenses the research and development of the last decade into eight chapters. In Part I, a good foundation is laid for understanding the individual device structure, its electrical characteristics, and modeling methodology. The different array configurations in which these memory devices are fabricated are also discussed. In Part II, the peripheral circuits -the CMOS circuits around the ReRAM array are discussed. They include sense amplifiers, programming circuits, and row/column access circuits. Recent developments such as the possibility to perform certain computing tasks in the ReRAM array are discussed in Part III.
Author : Tibor Grasser
Publisher : Springer Nature
ISBN 13 : 3030375005
Total Pages : 724 pages
Book Rating : 4.0/5 (33 download)
Download or read book Noise in Nanoscale Semiconductor Devices written by Tibor Grasser and published by Springer Nature. This book was released on 2020-04-26 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
Author : Y. Omura
Publisher : The Electrochemical Society
ISBN 13 : 1607685957
Total Pages : 337 pages
Book Rating : 4.6/5 (76 download)
Download or read book Advanced CMOS-Compatible Semiconductor Devices 17 written by Y. Omura and published by The Electrochemical Society. This book was released on 2015 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Vinod Tewary
Publisher : Woodhead Publishing
ISBN 13 : 0128199199
Total Pages : 628 pages
Book Rating : 4.1/5 (281 download)
Download or read book Modeling, Characterization, and Production of Nanomaterials written by Vinod Tewary and published by Woodhead Publishing. This book was released on 2022-11-09 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nano-scale materials have unique electronic, optical, and chemical properties that make them attractive for a new generation of devices. In the second edition of Modeling, Characterization, and Production of Nanomaterials: Electronics, Photonics, and Energy Applications, leading experts review the latest advances in research in the understanding, prediction, and methods of production of current and emerging nanomaterials for key applications. The chapters in the first half of the book cover applications of different modeling techniques, such as Green’s function-based multiscale modeling and density functional theory, to simulate nanomaterials and their structures, properties, and devices. The chapters in the second half describe the characterization of nanomaterials using advanced material characterization techniques, such as high-resolution electron microscopy, near-field scanning microwave microscopy, confocal micro-Raman spectroscopy, thermal analysis of nanoparticles, and applications of nanomaterials in areas such as electronics, solar energy, catalysis, and sensing. The second edition includes emerging relevant nanomaterials, applications, and updated modeling and characterization techniques and new understanding of nanomaterials. Covers the close connection between modeling and experimental methods for studying a wide range of nanomaterials and nanostructures Focuses on practical applications and industry needs through a solid outlining of the theoretical background Includes emerging nanomaterials and their applications in spintronics and sensing
Author : 秀島成忠
Publisher :
ISBN 13 : 9784562002504
Total Pages : 590 pages
Book Rating : 4.0/5 (25 download)
Download or read book 佐賀藩海軍史 written by 秀島成忠 and published by . This book was released on 1972 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Anton Heuberger
Publisher : Springer
ISBN 13 :
Total Pages : 1004 pages
Book Rating : 4.:/5 (2 download)
Download or read book ESSDERC ’89 written by Anton Heuberger and published by Springer. This book was released on 1989-09 with total page 1004 pages. Available in PDF, EPUB and Kindle. Book excerpt: The conference ESSDERC '89 held in September 1989 in Berlin was concerned with the physics, electrical characteristics, reliability and processing of solid state devices and electronic materials. The proceedings contain all invited and contributed papers of the conference and thus becomes a state-of-the-art-report of solid state device research in Europe 1989.
Author : Álvaro Rocha
Publisher : Springer
ISBN 13 : 3030118908
Total Pages : 976 pages
Book Rating : 4.0/5 (31 download)
Download or read book Information Technology and Systems written by Álvaro Rocha and published by Springer. This book was released on 2019-01-28 with total page 976 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book features a selection of articles from The 2019 International Conference on Information Technology & Systems (ICITS’19), held at the Universidad de Las Fuerzas Armadas, in Quito, Ecuador, on 6th to 8th February 2019. ICIST is a global forum for researchers and practitioners to present and discuss recent findings and innovations, current trends, professional experiences and challenges of modern information technology and systems research, together with their technological development and applications. The main topics covered are: information and knowledge management; organizational models and information systems; software and systems modeling; software systems, architectures, applications and tools; multimedia systems and applications; computer networks, mobility and pervasive systems; intelligent and decision support systems; big data analytics and applications; human–computer interaction; ethics, computers & security; health informatics; information technologies in education; cybersecurity and cyber-defense; electromagnetics, sensors and antennas for security.
Author : YongAn Huang
Publisher : Springer
ISBN 13 : 981133627X
Total Pages : 287 pages
Book Rating : 4.8/5 (113 download)
Download or read book Modeling and Application of Flexible Electronics Packaging written by YongAn Huang and published by Springer. This book was released on 2019-04-23 with total page 287 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book systematically discusses the modeling and application of transfer manipulation for flexible electronics packaging, presenting multiple processes according to the geometric sizes of the chips and devices as well as the detailed modeling and computation steps for each process. It also illustrates the experimental design of the equipment to help readers easily learn how to use it. This book is a valuable resource for scholars and graduate students in the research field of microelectronics.
