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2010 Silicon Nanoelectronics Workshop
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Book Synopsis Sinep 2009. 1st International Workshop on Si Based Nano-Electronics and -Photonics by : Steafno Chiussi
Download or read book Sinep 2009. 1st International Workshop on Si Based Nano-Electronics and -Photonics written by Steafno Chiussi and published by Netbiblo. This book was released on 2009-06 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main objective of this International Workshop in Vigo is to target this major problem by bringing together scientists and engineers specialized on various different topics related to group IV semiconductors. In five consecutive sessions dedicated to - Group IV materials: CMOS and further extension of the roadmap - Group IV materials: Nano-photonics - Material aspects and characterization on nano-scale - Nanostructures and material processing on atomic scale
Book Synopsis Nanoscale Silicon Devices by : Shunri Oda
Download or read book Nanoscale Silicon Devices written by Shunri Oda and published by CRC Press. This book was released on 2018-09-03 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.
Book Synopsis Micro- and Nanoelectronics by : Tomasz Brozek
Download or read book Micro- and Nanoelectronics written by Tomasz Brozek and published by CRC Press. This book was released on 2017-12-19 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text: Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches Describes the latest developments in carbon nanotubes, iii-v devices structures, and more Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.
Book Synopsis Emerging Nanoelectronic Devices by : An Chen
Download or read book Emerging Nanoelectronic Devices written by An Chen and published by John Wiley & Sons. This book was released on 2015-01-27 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging Nanoelectronic Devices focuses on the future direction of semiconductor and emerging nanoscale device technology. As the dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain increasing functionality at decreasing cost into the indefinite future. This is driving new paradigms of information processing enabled by innovative new devices, circuits, and architectures, necessary to support an increasingly interconnected world through a rapidly evolving internet. This original title provides a fresh perspective on emerging research devices in 26 up to date chapters written by the leading researchers in their respective areas. It supplements and extends the work performed by the Emerging Research Devices working group of the International Technology Roadmap for Semiconductors (ITRS). Key features: • Serves as an authoritative tutorial on innovative devices and architectures that populate the dynamic world of “Beyond CMOS” technologies. • Provides a realistic assessment of the strengths, weaknesses and key unknowns associated with each technology. • Suggests guidelines for the directions of future development of each technology. • Emphasizes physical concepts over mathematical development. • Provides an essential resource for students, researchers and practicing engineers.
Book Synopsis Semiconductor-On-Insulator Materials for Nanoelectronics Applications by : Alexei Nazarov
Download or read book Semiconductor-On-Insulator Materials for Nanoelectronics Applications written by Alexei Nazarov and published by Springer Science & Business Media. This book was released on 2011-03-03 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.
Book Synopsis Fundamentals of Tunnel Field-Effect Transistors by : Sneh Saurabh
Download or read book Fundamentals of Tunnel Field-Effect Transistors written by Sneh Saurabh and published by CRC Press. This book was released on 2016-10-26 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Download or read book Nanoelectronics written by Robert Puers and published by John Wiley & Sons. This book was released on 2017-04-11 with total page 713 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering first-hand insights by top scientists and industry experts at the forefront of R&D into nanoelectronics, this book neatly links the underlying technological principles with present and future applications. A brief introduction is followed by an overview of present and emerging logic devices, memories and power technologies. Specific chapters are dedicated to the enabling factors, such as new materials, characterization techniques, smart manufacturing and advanced circuit design. The second part of the book provides detailed coverage of the current state and showcases real future applications in a wide range of fields: safety, transport, medicine, environment, manufacturing, and social life, including an analysis of emerging trends in the internet of things and cyber-physical systems. A survey of main economic factors and trends concludes the book. Highlighting the importance of nanoelectronics in the core fields of communication and information technology, this is essential reading for materials scientists, electronics and electrical engineers, as well as those working in the semiconductor and sensor industries.
Book Synopsis Integrated Nanodevice and Nanosystem Fabrication by : Simon Deleonibus
Download or read book Integrated Nanodevice and Nanosystem Fabrication written by Simon Deleonibus and published by CRC Press. This book was released on 2017-11-22 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its invention, the integrated circuit has necessitated new process modules and numerous architectural changes to improve application performances, power consumption, and cost reduction. Silicon CMOS is now well established to offer the integration of several tens of billions of devices on a chip or in a system. At present, there are important challenges in the introduction of heterogeneous co-integration of materials and devices with the silicon CMOS 2D- and 3D-based platforms. New fabrication techniques allowing strong energy and variability efficiency come in as possible players to improve the various figures of merit of fabrication technology. Integrated Nanodevice and Nanosystem Fabrication: Breakthroughs and Alternatives is the second volume in the Pan Stanford Series on Intelligent Nanosystems. The book contains 8 chapters and is divided into two parts, the first of which reports breakthrough materials and techniques such as single ion implantation in silicon and diamond, graphene and 2D materials, nanofabrication using scanning probe microscopes, while the second tackles the scaling and architectural aspects of silicon devices through HiK scaling for nanoCMOS, nanoscale epitaxial growth of group IV semiconductors, design for variability co-optimization in SOI FinFETs, and nanowires for CMOS and diversifications.
Book Synopsis SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices by : D. Harame
Download or read book SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices written by D. Harame and published by The Electrochemical Society. This book was released on 2010-10 with total page 1066 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
Book Synopsis High Mobility and Quantum Well Transistors by : Geert Hellings
Download or read book High Mobility and Quantum Well Transistors written by Geert Hellings and published by Springer Science & Business Media. This book was released on 2013-03-25 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.
Book Synopsis Solid-State-Drives (SSDs) Modeling by : Rino Micheloni
Download or read book Solid-State-Drives (SSDs) Modeling written by Rino Micheloni and published by Springer. This book was released on 2017-03-28 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces simulation tools and strategies for complex systems of solid-state-drives (SSDs) which consist of a flash multi-core microcontroller plus NAND flash memories. It provides a broad overview of the most popular simulation tools, with special focus on open source solutions. VSSIM, NANDFlashSim and DiskSim are benchmarked against performances of real SSDs under different traffic workloads. PROs and CONs of each simulator are analyzed, and it is clearly indicated which kind of answers each of them can give and at a what price. It is explained, that speed and precision do not go hand in hand, and it is important to understand when to simulate what, and with which tool. Being able to simulate SSD’s performances is mandatory to meet time-to-market, together with product cost and quality. Over the last few years the authors developed an advanced simulator named “SSDExplorer” which has been used to evaluate multiple phenomena with great accuracy, from QoS (Quality Of Service) to Read Retry, from LDPC Soft Information to power, from Flash aging to FTL. SSD simulators are also addressed in a broader context in this book, i.e. the analysis of what happens when SSDs are connected to the OS (Operating System) and to the end-user application (for example, a database search). The authors walk the reader through the full simulation flow of a real system-level by combining SSD Explorer with the QEMU virtual platform. The reader will be impressed by the level of know-how and the combination of models that such simulations are asking for.
Book Synopsis MOS Devices for Low-Voltage and Low-Energy Applications by : Yasuhisa Omura
Download or read book MOS Devices for Low-Voltage and Low-Energy Applications written by Yasuhisa Omura and published by John Wiley & Sons. This book was released on 2017-02-28 with total page 483 pages. Available in PDF, EPUB and Kindle. Book excerpt: Helps readers understand the physics behind MOS devices for low-voltage and low-energy applications Based on timely published and unpublished work written by expert authors Discusses various promising MOS devices applicable to low-energy environmental and biomedical uses Describes the physical effects (quantum, tunneling) of MOS devices Demonstrates the performance of devices, helping readers to choose right devices applicable to an industrial or consumer environment Addresses some Ge-based devices and other compound-material-based devices for high-frequency applications and future development of high performance devices. "Seemingly innocuous everyday devices such as smartphones, tablets and services such as on-line gaming or internet keyword searches consume vast amounts of energy. Even when in standby mode, all these devices consume energy. The upcoming 'Internet of Things' (IoT) is expected to deploy 60 billion electronic devices spread out in our homes, cars and cities. Britain is already consuming up to 16 per cent of all its power through internet use and this rate is doubling every four years. According to The UK's Daily Mail May (2015), if usage rates continue, all of Britain's power supply could be consumed by internet use in just 20 years. In 2013, U.S. data centers consumed an estimated 91 billion kilowatt-hours of electricity, corresponding to the power generated by seventeen 1000-megawatt nuclear power plants. Data center electricity consumption is projected to increase to roughly 140 billion kilowatt-hours annually by 2020, the equivalent annual output of 50 nuclear power plants." —Natural Resources Defense Council, USA, Feb. 2015 All these examples stress the urgent need for developing electronic devices that consume as little energy as possible. The book “MOS Devices for Low-Voltage and Low-Energy Applications” explores the different transistor options that can be utilized to achieve that goal. It describes in detail the physics and performance of transistors that can be operated at low voltage and consume little power, such as subthreshold operation in bulk transistors, fully depleted SOI devices, tunnel FETs, multigate and gate-all-around MOSFETs. Examples of low-energy circuits making use of these devices are given as well. "The book MOS Devices for Low-Voltage and Low-Energy Applications is a good reference for graduate students, researchers, semiconductor and electrical engineers who will design the electronic systems of tomorrow." —Dr. Jean-Pierre Colinge, Taiwan Semiconductor Manufacturing Company (TSMC) "The authors present a creative way to show how different MOS devices can be used for low-voltage and low-power applications. They start with Bulk MOSFET, following with SOI MOSFET, FinFET, gate-all-around MOSFET, Tunnel-FET and others. It is presented the physics behind the devices, models, simulations, experimental results and applications. This book is interesting for researchers, graduate and undergraduate students. The low-energy field is an important topic for integrated circuits in the future and none can stay out of this." —Prof. Joao A. Martino, University of Sao Paulo, Brazil
Book Synopsis Fabless Semiconductor Manufacturing by : Chinmay K. Maiti
Download or read book Fabless Semiconductor Manufacturing written by Chinmay K. Maiti and published by CRC Press. This book was released on 2022-11-17 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals with 3D nanodevices such as nanowire and nanosheet transistors at 7 nm and smaller technology nodes. It discusses technology computer-aided design (TCAD) simulations of stress- and strain-engineered advanced semiconductor devices, including III-nitride and RF FDSOI CMOS, for flexible and stretchable electronics. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including fabless intelligent manufacturing. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. In order to extend the role of TCAD in the More-than-Moore era, the design issues related to strain engineering for flexible and stretchable electronics have been introduced for the first time.
Book Synopsis Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs by : Jerry G. Fossum
Download or read book Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs written by Jerry G. Fossum and published by Cambridge University Press. This book was released on 2013-08-29 with total page 227 pages. Available in PDF, EPUB and Kindle. Book excerpt: Understand the theory, design and applications of FD/SOI MOSFETs and 3-D FinFETs with this concise and clear guide to FD/UTB transistors. Topics covered include short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM, and nanoscale UTB CMOS performances.
Book Synopsis Frontiers In Electronics: Selected Papers From The Workshop On Frontiers In Electronics 2011 (Wofe-11) by : Sorin Cristoloveanu
Download or read book Frontiers In Electronics: Selected Papers From The Workshop On Frontiers In Electronics 2011 (Wofe-11) written by Sorin Cristoloveanu and published by World Scientific. This book was released on 2013-07-08 with total page 273 pages. Available in PDF, EPUB and Kindle. Book excerpt: Frontiers in Electronics includes the best papers of WOFE-11 invited by the Editors and down selected after the peer review process. This book is conceived to make available in the international arena extended versions of selected, high impact talks. The papers are divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; wide band gap technology for high power and UV photonics.
Book Synopsis Single-Atom Nanoelectronics by : Enrico Prati
Download or read book Single-Atom Nanoelectronics written by Enrico Prati and published by CRC Press. This book was released on 2016-04-19 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single-Atom Nanoelectronics covers the fabrication of single-atom devices and related technology, as well as the relevant electronic equipment and the intriguing new phenomena related to single-atom and single-electron effects in quantum devices. It also covers the alternative approaches related to both silicon- and carbon-based technologies, also
Book Synopsis Intelligent Communication, Control and Devices by : Rajesh Singh
Download or read book Intelligent Communication, Control and Devices written by Rajesh Singh and published by Springer. This book was released on 2018-04-10 with total page 1729 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book focuses on the integration of intelligent communication systems, control systems, and devices related to all aspects of engineering and sciences. It contains high-quality research papers presented at the 2nd international conference, ICICCD 2017, organized by the Department of Electronics, Instrumentation and Control Engineering of University of Petroleum and Energy Studies, Dehradun on 15 and 16 April, 2017. The volume broadly covers recent advances of intelligent communication, intelligent control and intelligent devices. The work presented in this book is original research work, findings and practical development experiences of researchers, academicians, scientists and industrial practitioners.
