Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Download 2006 International Conference On Indium Phosphide And Related Materials Conference Proceedings full books in PDF, epub, and Kindle. Read online 2006 International Conference On Indium Phosphide And Related Materials Conference Proceedings ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author :
Publisher :
ISBN 13 : 9781509091485
Total Pages : pages
Book Rating : 4.0/5 (914 download)
Download or read book 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings written by and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Paul Maki
Publisher : World Scientific
ISBN 13 : 9814474746
Total Pages : 205 pages
Book Rating : 4.8/5 (144 download)
Download or read book Advanced Semiconductor Devices - Proceedings Of The 2006 Lester Eastman Conference written by Paul Maki and published by World Scientific. This book was released on 2007-06-27 with total page 205 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume covers five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicon-germanium devices, nanoelectronics and ballistic devices, and the characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many “firsts” and breakthrough results, as has become a tradition with the Lester Eastman Conference, and will allow readers to obtain up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of state-of-the-art and “hot off the press” results making the book required reading for engineers, scientists, and students working on advanced and high speed device technology.
Author : N. Mohankumar
Publisher : CRC Press
ISBN 13 : 100045455X
Total Pages : 142 pages
Book Rating : 4.0/5 (4 download)
Download or read book Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications written by N. Mohankumar and published by CRC Press. This book was released on 2021-09-29 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.
Author : D. Nirmal
Publisher : CRC Press
ISBN 13 : 0429862520
Total Pages : 434 pages
Book Rating : 4.4/5 (298 download)
Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author :
Publisher :
ISBN 13 :
Total Pages : 892 pages
Book Rating : 4.E/5 ( download)
Download or read book Seventh International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 1995 with total page 892 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : Newnes
ISBN 13 : 0080932282
Total Pages : 3572 pages
Book Rating : 4.0/5 (89 download)
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Author : Philip Garrou
Publisher : John Wiley & Sons
ISBN 13 : 352762306X
Total Pages : 798 pages
Book Rating : 4.5/5 (276 download)
Download or read book Handbook of 3D Integration, Volume 1 written by Philip Garrou and published by John Wiley & Sons. This book was released on 2011-09-22 with total page 798 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first encompassing treatise of this new, but very important field puts the known physical limitations for classic 2D electronics into perspective with the requirements for further electronics developments and market necessities. This two-volume handbook presents 3D solutions to the feature density problem, addressing all important issues, such as wafer processing, die bonding, packaging technology, and thermal aspects. It begins with an introductory part, which defines necessary goals, existing issues and relates 3D integration to the semiconductor roadmap of the industry. Before going on to cover processing technology and 3D structure fabrication strategies in detail. This is followed by fields of application and a look at the future of 3D integration. The contributions come from key players in the field, from both academia and industry, including such companies as Lincoln Labs, Fraunhofer, RPI, ASET, IMEC, CEA-LETI, IBM, and Renesas.
Author : Tommy Rosenbaum
Publisher : BoD – Books on Demand
ISBN 13 : 3743134268
Total Pages : 266 pages
Book Rating : 4.7/5 (431 download)
Download or read book Performance prediction of a future SiGe HBT technology using a heterogeneous set of simulation tools and approaches written by Tommy Rosenbaum and published by BoD – Books on Demand. This book was released on 2017-03-10 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bipolar complementary metal-oxide-semiconductor (BiCMOS) processes can be considered as the most general solution for RF products, as they combine the mature manufacturing tools of CMOS with the speed and drive capabilities of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). HBTs in turn are major contenders for partially filling the terahertz gap, which describes the range in which the frequencies generated by transistors and lasers do not overlap (approximately 0.3 THz to 30 THz). To evaluate the capabilities of such future devices, a reliable prediction methodology is desirable. Using a heterogeneous set of simulation tools and approaches allows to achieve this goal successively and is beneficial for troubleshooting. Various scientific fields are combined, such as technology computer-aided design (TCAD), compact modeling and parameter extraction. To create a foundation for the simulation environment and to ensure reproducibility, the used material models of the hydrodynamic and drift-diffusion approaches are introduced in the beginning of this thesis. The physical models are mainly based on literature data of Monte Carlo (MC) or deterministic simulations of the Boltzmann transport equation (BTE). However, the TCAD deck must be calibrated on measurement data too for a reliable performance prediction of HBTs. The corresponding calibration approach is based on measurements of an advanced SiGe HBT technology for which a technology-specific parameter set of the HICUM/L2 compact model is extracted for the high-speed, medium-voltage and high-voltage transistor versions. With the help of the results, one-dimensional transistor characteristics are generated that serve as reference for the doping profile and model calibration. By performing elaborate comparisons between measurement-based reference data and simulations, the thesis advances the state-of-the-art of TCAD-based predictions and proofs the feasibility of the approach. Finally, the performance of a future technology in 28 nm is predicted by applying the heterogeneous methodology. On the basis of the TCAD results, bottlenecks of the technology are identified.
Author : Tolga Tekin
Publisher : Woodhead Publishing
ISBN 13 : 008100513X
Total Pages : 431 pages
Book Rating : 4.0/5 (81 download)
Download or read book Optical Interconnects for Data Centers written by Tolga Tekin and published by Woodhead Publishing. This book was released on 2016-11-01 with total page 431 pages. Available in PDF, EPUB and Kindle. Book excerpt: Current data centre networks, based on electronic packet switches, are experiencing an exponential increase in network traffic due to developments such as cloud computing. Optical interconnects have emerged as a promising alternative offering high throughput and reduced power consumption. Optical Interconnects for Data Centers reviews key developments in the use of optical interconnects in data centres and the current state of the art in transforming this technology into a reality. The book discusses developments in optical materials and components (such as single and multi-mode waveguides), circuit boards and ways the technology can be deployed in data centres. Optical Interconnects for Data Centers is a key reference text for electronics designers, optical engineers, communications engineers and R&D managers working in the communications and electronics industries as well as postgraduate researchers. - Summarizes the state-of-the-art in this emerging field - Presents a comprehensive review of all the key aspects of deploying optical interconnects in data centers, from materials and components, to circuit boards and methods for integration - Contains contributions that are drawn from leading international experts on the topic
Author : Mohamed Henini
Publisher : Elsevier
ISBN 13 : 0128121378
Total Pages : 790 pages
Book Rating : 4.1/5 (281 download)
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author : Antonis Papanikolaou
Publisher : Springer Science & Business Media
ISBN 13 : 1441909621
Total Pages : 251 pages
Book Rating : 4.4/5 (419 download)
Download or read book Three Dimensional System Integration written by Antonis Papanikolaou and published by Springer Science & Business Media. This book was released on 2010-12-07 with total page 251 pages. Available in PDF, EPUB and Kindle. Book excerpt: Three-dimensional (3D) integrated circuit (IC) stacking is the next big step in electronic system integration. It enables packing more functionality, as well as integration of heterogeneous materials, devices, and signals, in the same space (volume). This results in consumer electronics (e.g., mobile, handheld devices) which can run more powerful applications, such as full-length movies and 3D games, with longer battery life. This technology is so promising that it is expected to be a mainstream technology a few years from now, less than 10-15 years from its original conception. To achieve this type of end product, changes in the entire manufacturing and design process of electronic systems are taking place. This book provides readers with an accessible tutorial on a broad range of topics essential to the non-expert in 3D System Integration. It is an invaluable resource for anybody in need of an overview of the 3D manufacturing and design chain.
Author : Arindam Biswas
Publisher : Springer Nature
ISBN 13 : 9811532354
Total Pages : 210 pages
Book Rating : 4.8/5 (115 download)
Download or read book Emerging Trends in Terahertz Solid-State Physics and Devices written by Arindam Biswas and published by Springer Nature. This book was released on 2020-03-20 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book highlights recent advances and applications in terahertz (THz) technology, addressing advanced topics such as THz biomedical imaging, pattern recognition and tomographic reconstruction for THz biomedical imaging by machine learning and artificial intelligence, THz imaging radars for autonomous vehicle applications, and THz imaging systems for security and surveillance. It also discusses theoretical, experimental, established and validated empirical work on these topics.
Author : Alex Mutig
Publisher : Springer Science & Business Media
ISBN 13 : 3642165702
Total Pages : 179 pages
Book Rating : 4.6/5 (421 download)
Download or read book High Speed VCSELs for Optical Interconnects written by Alex Mutig and published by Springer Science & Business Media. This book was released on 2011-01-12 with total page 179 pages. Available in PDF, EPUB and Kindle. Book excerpt: The transmission speed of data communication systems is forecast to increase exponentially over the next decade. Development of both Si-based high-speed drivers as well as III-V-semiconductor-based high-speed vertical cavity surface emitting lasers (VCSELs) are prerequisites for future ultrahigh data-rate systems. This thesis presents: - a survey of the present state of the art of VCSELs - a systematic investigation of the various effects limiting present VCSELs - a catalogue of solutions to overcome present limits - detailed progress in modelling, fabricating and testing the currently most advanced VCSELs at the two commercially most important wavelengths.
Author : Wynand Lambrechts
Publisher : Springer
ISBN 13 : 3319474030
Total Pages : 343 pages
Book Rating : 4.3/5 (194 download)
Download or read book SiGe-based Re-engineering of Electronic Warfare Subsystems written by Wynand Lambrechts and published by Springer. This book was released on 2016-10-19 with total page 343 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers a thorough understanding of the applicability of new-generation silicon-germanium (SiGe) electronic subsystems for electronic warfare and defensive countermeasures in military contexts. It explains in detail the theoretical and technical background, and addresses all aspects of the integration of SiGe as an enabling technology for maritime, land, and airborne / spaceborne electronic warfare, including research, design, development, and implementation. The coverage is supported by mathematical derivations, informative illustrations, practical examples, and case studies. While SiGe technology provides speed, performance, and price advantages in many markets, to date only limited information has been available on its use in electronic warfare systems, especially in developing nations. Addressing that need, this book offers essential engineering guidelines that especially focus on the speed and reliability of current-generation SiGe circuits and highlight emerging innovations that help to ensure the sustainable long-term integration of SiGe into electronic warfare systems.
Author : Kamakhya P. Ghatak
Publisher : Springer
ISBN 13 : 3319083805
Total Pages : 381 pages
Book Rating : 4.3/5 (19 download)
Download or read book Heavily-Doped 2D-Quantized Structures and the Einstein Relation written by Kamakhya P. Ghatak and published by Springer. This book was released on 2014-07-30 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.
Author : Stuart Irvine
Publisher : John Wiley & Sons
ISBN 13 : 111931304X
Total Pages : 586 pages
Book Rating : 4.1/5 (193 download)
Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-08-27 with total page 586 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 143987431X
Total Pages : 1041 pages
Book Rating : 4.4/5 (398 download)
Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1041 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.
