Wide Bandgap Power Semiconductor Packaging

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Wide Bandgap Power Semiconductor Packaging

Author : Katsuaki Suganuma
Publisher : Woodhead Publishing
ISBN 13 : 0081020953
Total Pages : 242 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Wide Bandgap Power Semiconductor Packaging by : Katsuaki Suganuma

Download or read book Wide Bandgap Power Semiconductor Packaging written by Katsuaki Suganuma and published by Woodhead Publishing. This book was released on 2018-05-28 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic. Examines the key challenges of wide bandgap power semiconductor packaging at various levels, including materials, components and device performance Provides the latest research on potential solutions, with an eye towards the end goal of system integration Discusses key problems, such as thermal management, noise reduction, challenges in interconnects and substrates

High Voltage Packaging Technology for Wide Bandgap Power Semiconductor Devices

Author : Suhail Jeremy Rashid
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (89 download)

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Book Synopsis High Voltage Packaging Technology for Wide Bandgap Power Semiconductor Devices by : Suhail Jeremy Rashid

Download or read book High Voltage Packaging Technology for Wide Bandgap Power Semiconductor Devices written by Suhail Jeremy Rashid and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Packaging of Wide Bandgap Power Semiconductors using Simulation-based Design

Author :
Publisher :
ISBN 13 : 9788772104263
Total Pages : 0 pages
Book Rating : 4.1/5 (42 download)

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Book Synopsis Packaging of Wide Bandgap Power Semiconductors using Simulation-based Design by :

Download or read book Packaging of Wide Bandgap Power Semiconductors using Simulation-based Design written by and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

High-Performance Packaging Technology for Wide Bandgap Semiconductor Modules

Author : Paul Mumby-Croft
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (115 download)

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Book Synopsis High-Performance Packaging Technology for Wide Bandgap Semiconductor Modules by : Paul Mumby-Croft

Download or read book High-Performance Packaging Technology for Wide Bandgap Semiconductor Modules written by Paul Mumby-Croft and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The properties of wide band gap (WBG) semiconductors are beneficial to power electronics applications ranging from consumer electronics and renewable energy to electric vehicles and high-power traction applications like high-speed trains. WBG devices, properly integrated, will allow power electronics systems to be smaller, lighter, operate at higher temperatures, and at higher frequencies than previous generations of Si-based systems. These will contribute to higher efficiency, and therefore, lower lifecycle costs and lower CO2 emissions. Over 20 years have been spent developing WBG materials, low-defect-density wafers, epitaxy, and device fabrication and processing technology. In power electronics applications, devices are normally packaged into large integrated modules with electrical, mechanical and thermal connection to the system and control circuit. The first generations of WBG device have used conventional or existing module designs to allow drop-in replacement of Si devices; this approach limits the potential benefit. To realize the full potential of WBG devices, especially the higher operating temperatures and faster switching frequency, a new generation of packaging design and technology concepts must be widely implemented.

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

Author : Yogesh Kumar Sharma
Publisher : BoD – Books on Demand
ISBN 13 : 1789236681
Total Pages : 154 pages
Book Rating : 4.7/5 (892 download)

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Book Synopsis Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications by : Yogesh Kumar Sharma

Download or read book Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications written by Yogesh Kumar Sharma and published by BoD – Books on Demand. This book was released on 2018-09-12 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.

Wide Energy Bandgap Electronic Devices

Author : Fan Ren
Publisher : World Scientific
ISBN 13 : 9812382461
Total Pages : 526 pages
Book Rating : 4.8/5 (123 download)

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Book Synopsis Wide Energy Bandgap Electronic Devices by : Fan Ren

Download or read book Wide Energy Bandgap Electronic Devices written by Fan Ren and published by World Scientific. This book was released on 2003 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.

High Temperature Packaging for Wide Bandgap Semiconductor Devices

Author : Brian J. Grummel
Publisher :
ISBN 13 :
Total Pages : 107 pages
Book Rating : 4.:/5 (652 download)

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Book Synopsis High Temperature Packaging for Wide Bandgap Semiconductor Devices by : Brian J. Grummel

Download or read book High Temperature Packaging for Wide Bandgap Semiconductor Devices written by Brian J. Grummel and published by . This book was released on 2008 with total page 107 pages. Available in PDF, EPUB and Kindle. Book excerpt: Currently, wide bandgap semiconductor devices feature increased efficiency, higher current handling capabilities, and higher reverse blocking voltages than silicon devices while recent fabrication advances have them drawing near to the marketplace. However these new semiconductors are in need of new packaging that will allow for their application in several important uses including hybrid electrical vehicles, new and existing energy sources, and increased efficiency in multiple new and existing technologies. Also, current power module designs for silicon devices are rife with problems that must be enhanced to improve reliability. This thesis introduces new packaging that is thermally resilient and has reduced mechanical stress from temperature rise that also provides increased circuit lifetime and greater reliability for continued use to 300°C which is within operation ratings of these new semiconductors. The new module is also without problematic wirebonds that lead to a majority of traditional module failures which also introduce parasitic inductance and increase thermal resistance. Resultantly, the module also features a severely reduced form factor in mass and volume.

Power Electronic Packaging

Author : Yong Liu
Publisher : Springer Science & Business Media
ISBN 13 : 1461410533
Total Pages : 606 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Power Electronic Packaging by : Yong Liu

Download or read book Power Electronic Packaging written by Yong Liu and published by Springer Science & Business Media. This book was released on 2012-02-15 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronic Packaging presents an in-depth overview of power electronic packaging design, assembly,reliability and modeling. Since there is a drastic difference between IC fabrication and power electronic packaging, the book systematically introduces typical power electronic packaging design, assembly, reliability and failure analysis and material selection so readers can clearly understand each task's unique characteristics. Power electronic packaging is one of the fastest growing segments in the power electronic industry, due to the rapid growth of power integrated circuit (IC) fabrication, especially for applications like portable, consumer, home, computing and automotive electronics. This book also covers how advances in both semiconductor content and power advanced package design have helped cause advances in power device capability in recent years. The author extrapolates the most recent trends in the book's areas of focus to highlight where further improvement in materials and techniques can drive continued advancements, particularly in thermal management, usability, efficiency, reliability and overall cost of power semiconductor solutions.

SiC Power Module Design

Author : Alberto Castellazzi
Publisher : IET
ISBN 13 : 1785619071
Total Pages : 359 pages
Book Rating : 4.7/5 (856 download)

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Book Synopsis SiC Power Module Design by : Alberto Castellazzi

Download or read book SiC Power Module Design written by Alberto Castellazzi and published by IET. This book was released on 2021-12-09 with total page 359 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap semiconductor devices offer higher efficiency, smaller size, less weight, and longer lifetime, with applications in power grid electronics and electromobility. This book describes the state of advanced packaging solutions for novel wide-band-gap semiconductors, specifically silicon carbide (SiC) MOSFETs and diodes.

Wide Bandgap Semiconductor Power Devices

Author : B. Jayant Baliga
Publisher : Woodhead Publishing
ISBN 13 : 0081023073
Total Pages : 420 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Wide Bandgap Semiconductor Power Devices by : B. Jayant Baliga

Download or read book Wide Bandgap Semiconductor Power Devices written by B. Jayant Baliga and published by Woodhead Publishing. This book was released on 2018-10-17 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

3-D Prismatic Packaging Methodologies for Wide Band Gap Power Electronics Modules

Author : Haotao Ke
Publisher :
ISBN 13 :
Total Pages : 116 pages
Book Rating : 4.:/5 (11 download)

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Book Synopsis 3-D Prismatic Packaging Methodologies for Wide Band Gap Power Electronics Modules by : Haotao Ke

Download or read book 3-D Prismatic Packaging Methodologies for Wide Band Gap Power Electronics Modules written by Haotao Ke and published by . This book was released on 2017 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Design and Characterization of High-temperature Packaging for Wide-bandgap Semiconductor Devices

Author : Brian J. Grummel
Publisher :
ISBN 13 :
Total Pages : 140 pages
Book Rating : 4.:/5 (881 download)

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Book Synopsis Design and Characterization of High-temperature Packaging for Wide-bandgap Semiconductor Devices by : Brian J. Grummel

Download or read book Design and Characterization of High-temperature Packaging for Wide-bandgap Semiconductor Devices written by Brian J. Grummel and published by . This book was released on 2012 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: This was confirmed by electrical resistivity measurement, EDS, FIB, and SEM characterization. Thermal and mechanical characterization of TLP die-attached samples was also performed to gain a newfound understanding of the relationship between TLP design parameters and die-attach properties. Samples with a SiC diode chip TLP bonded to a copper metalized silicon nitride substrate were made using several different values of fabrication parameters such as gold and indium thickness, Au-In ratio, and bonding pressure. The TLP bonds were then characterized for die-attach voiding, shear strength, and thermal impedance. It was found that TLP die-attach offers high average shear force strength of 22.0 kgf and a low average thermal impedance of 0.35 K/W from the device junction to the substrate. The influence of various fabrication parameters on the bond characteristics were also compared, providing information necessary for implementing TLP die-attach into power electronic modules for high-temperature applications. The outcome of the investigation on TLP bonding techniques was incorporated into a new power module design utilizing TLP bonding. A full half-bridge inverter power module for low-power space applications has been designed and analyzed with extensive finite element thermo-mechanical modeling. In summary, TLP die-attach has investigated to confirm its reliability and to understand how to design effective TLP bonds, this information has been used to design a new high-temperature power electronic module.

Power Electronics in Renewable Energy Systems and Smart Grid

Author : Bimal K. Bose
Publisher : John Wiley & Sons
ISBN 13 : 1119515629
Total Pages : 756 pages
Book Rating : 4.1/5 (195 download)

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Book Synopsis Power Electronics in Renewable Energy Systems and Smart Grid by : Bimal K. Bose

Download or read book Power Electronics in Renewable Energy Systems and Smart Grid written by Bimal K. Bose and published by John Wiley & Sons. This book was released on 2019-08-06 with total page 756 pages. Available in PDF, EPUB and Kindle. Book excerpt: The comprehensive and authoritative guide to power electronics in renewable energy systems Power electronics plays a significant role in modern industrial automation and high- efficiency energy systems. With contributions from an international group of noted experts, Power Electronics in Renewable Energy Systems and Smart Grid: Technology and Applications offers a comprehensive review of the technology and applications of power electronics in renewable energy systems and smart grids. The authors cover information on a variety of energy systems including wind, solar, ocean, and geothermal energy systems as well as fuel cell systems and bulk energy storage systems. They also examine smart grid elements, modeling, simulation, control, and AI applications. The book's twelve chapters offer an application-oriented and tutorial viewpoint and also contain technology status review. In addition, the book contains illustrative examples of applications and discussions of future perspectives. This important resource: Includes descriptions of power semiconductor devices, two level and multilevel converters, HVDC systems, FACTS, and more Offers discussions on various energy systems such as wind, solar, ocean, and geothermal energy systems, and also fuel cell systems and bulk energy storage systems Explores smart grid elements, modeling, simulation, control, and AI applications Contains state-of-the-art technologies and future perspectives Provides the expertise of international authorities in the field Written for graduate students, professors in power electronics, and industry engineers, Power Electronics in Renewable Energy Systems and Smart Grid: Technology and Applications offers an up-to-date guide to technology and applications of a wide-range of power electronics in energy systems and smart grids.

Power GaN Devices

Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Technology Report - Current Developments in 3D Power Packaging with Focus on Embedded Substrate Technologies (2015)

Author :
Publisher :
ISBN 13 : 9780991564460
Total Pages : pages
Book Rating : 4.5/5 (644 download)

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Book Synopsis Technology Report - Current Developments in 3D Power Packaging with Focus on Embedded Substrate Technologies (2015) by :

Download or read book Technology Report - Current Developments in 3D Power Packaging with Focus on Embedded Substrate Technologies (2015) written by and published by . This book was released on 2015-03-10 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This report is the Phase 2 report on 3D packaging of power sources and is a follow up to the previous report published by the PSMA Packaging Committee. The report begins with a discussion of PCB embedding technologies which are now in high volume production and together with 3D packaging technology predominately provide a significant performance and size reduction enhancement opportunity rather than a means to reduce costs. Also presented is information on high temperature die and component attachment technologies that are evolving rapidly in the research labs. However, high power-density component embedding and 3D packaging of power semiconductors also have to overcome a 'thermal barrier" - since it is more challenging to remove heat generated within the body of a 3D integrated system than from a planar surface. To execute an embedded power design is very dependent on the availability of passive components optimized for PCB embedding and the report includes some of the available sources. The report also includes the results of a worldwide literature search of R&D published by participating organizations. These technologies, combined with wide-bandgap semiconductor devices will literally re-vitalize the entire power electronics infrastructure block by block, module by module, for the twenty-first century.

Aspencore Guide to Gallium Nitride

Author : Maurizio Di Paolo Emilio
Publisher :
ISBN 13 : 9781735813127
Total Pages : 160 pages
Book Rating : 4.8/5 (131 download)

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Book Synopsis Aspencore Guide to Gallium Nitride by : Maurizio Di Paolo Emilio

Download or read book Aspencore Guide to Gallium Nitride written by Maurizio Di Paolo Emilio and published by . This book was released on 2021-01-20 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: As silicon reaches its theoretical performance limits for power electronics, industry is shifting toward wide-bandgap materials like Gallium Nitride (GaN), whose properties provide clear benefits in power converters for consumer and industrial electronics. In over 150 pages covering the technology, its applications, markets and future potential, this book delves into GaN technology and its importance for power electronics professionals engaged with its implementation in power devices. The properties of GaN, such as low leakage current, significantly reduced power losses, higher power density and the ability to tolerate higher operating temperatures, all from a device smaller than its silicon-only equivalent, provide design advantages allowing previously unimaginable application performance. As an alternative to silicon, GaN can provide clear benefits in power converters for consumer and industrial electronics; chargers for wireless devices, including 5G; driver circuits for motor control; and power switches in automotive and space applications.The book also explores why GaN-based devices hold the key to addressing the energy efficiency agenda, a key strategic initiative in increasingly power-reliant industries such as data centers, electric vehicles, and renewable energy systems. Highly efficient residential and commercial energy storage systems using GaN technology will enable distribution, local storage, and on-demand access to renewable energy. Continued progress in the battery market will lead to declining battery costs and the development of smaller batteries that pair with GaN technology-based converters and inverters. Thermal management is critical in power electronics, and high efficiency in higher-power systems is always a focus. With GaN, a 50% reduction in losses can be achieved, reducing the costs and area required to manage heat. The book delves into GaN's electrical characteristics and how these can be exploited in power devices. There are also chapters that cross into the key applications for GaN devices for several markets such as space, automotive, audio, motor control and data centers. Each chapter provides a comprehensive overview of the subject matter for anyone who wants to stay on the leading edge of power electronics.

SiC Materials and Devices

Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9812703837
Total Pages : 143 pages
Book Rating : 4.8/5 (127 download)

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Book Synopsis SiC Materials and Devices by : Michael Shur

Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2007 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.