Using Complementary Silicon Germanium Transistors For Design Of High Performance Rf Front Ends

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Using Complementary Silicon-germanium Transistors for Design of High-performance Rf Front-ends

Author : Sachin Seth
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (825 download)

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Book Synopsis Using Complementary Silicon-germanium Transistors for Design of High-performance Rf Front-ends by : Sachin Seth

Download or read book Using Complementary Silicon-germanium Transistors for Design of High-performance Rf Front-ends written by Sachin Seth and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the research presented in this dissertation is to explore the achievable dynamic range limits in high-performance RF front-ends designed using SiGe HBTs, with a focus on complementary (npn + pnp) SiGe technologies. The performance requirements of RF front-ends are high gain, high linearity, low dc power consumption, very low noise figure, and compactness. The research presented in this dissertation shows that all of these requirements can easily be met by using complementary SiGe HBTs. Thus, a strong case is made in favor of using SiGe technologies for designing high dynamic range RF front-ends. The contributions from this research are summarized as follows: 1. The first-ever comparison study and comprehensive analysis of small-signal linearity (IIP3) for npn and pnp SiGe HBTs on SOI. 2. A novel comparison of large-signal robustness of npn and pnp SiGe HBTs for use in high-performance RF front-ends. 3. A systematic and rigorous comparison of SiGe HBT compact models for high-fidelity distortion modeling. 4. The first-ever feasibility study of using weakly-saturated SiGe HBTs for use in severely power constrained RF front-ends. 5. A novel X-band Low Noise Amplifier (LNA) using weakly-saturated SiGe HBTs. 6. Design and comprehensive analysis of RF switches with enhanced large-signal linearity. 7. Development of novel methods to reduce crosstalk noise in mixed-signal circuits and the first-ever analysis of crosstalk noise across temperature. 8. Design of a very high-linearity cellular band quadrature modulator for use in base-station applications using first-generation complementary SiGe HBTs.

Silicon-Based RF Front-Ends for Ultra Wideband Radios

Author : Aminghasem Safarian
Publisher : Springer Science & Business Media
ISBN 13 : 1402067224
Total Pages : 97 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Silicon-Based RF Front-Ends for Ultra Wideband Radios by : Aminghasem Safarian

Download or read book Silicon-Based RF Front-Ends for Ultra Wideband Radios written by Aminghasem Safarian and published by Springer Science & Business Media. This book was released on 2007-12-28 with total page 97 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive study of silicon-based distributed architectures in wideband circuits are presented in this book. Novel circuit architectures for ultra-wideband (UWB) wireless technologies are described. The book begins with an introduction of several transceiver architectures for UWB. The discussion then focuses on RF front-end of the UWB radio. Therefore, the book will be of interest to RF circuit designers and students.

Design of High-speed SiGe HBT Circuits for Wideband Transceivers

Author : Yuan Lu
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (15 download)

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Book Synopsis Design of High-speed SiGe HBT Circuits for Wideband Transceivers by : Yuan Lu

Download or read book Design of High-speed SiGe HBT Circuits for Wideband Transceivers written by Yuan Lu and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this work was to design high-speed circuits using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) and complementary SiGe (C-SiGe) HBTs, as well as silicon (Si) complementary metal oxide semiconductor (CMOS) devices, for next-generation ultra-wideband (UWB) transceivers. The advantages of using UWB systems over conventional narrowband transceivers include their lower power requirements, higher data rate, more efficient spectrum usage, precise positioning capability, lower complexity, and lower cost. The two major components in a UWB transceiver IC are the radio frequency (RF) circuit and the analog-to-digital converter (ADC). In this work, circuit-level solutions to improve the speed and performance of critical building blocks in both the RF front-end and the ADC are presented. Device-related issues affecting SiGe HBTs for potential applications in UWB systems intended for use in extreme environments will also be investigated. This research envisions to realize various circuit blocks in a UWB transceiver including, a 3-10 GHz UWB low noise amplifiers (LNAs) in both the second (120 GHz) and third (200 GHz) SiGe technologies, an 8-bit 12 GSample/sec SiGe BiCMOS track-and-hold amplifier (THA), and a fifth order elliptic gm-c low-pass filter in C-SiGe HBT technology. This research will also focus on characterizing SiGe HBTs for UWB electronics for operation in extreme environments by investigating the proton radiation effects in the third generation SiGe HBTs.

Silicon Germanium Materials and Devices - A Market and Technology Overview to 2006

Author : R. Szweda
Publisher : Elsevier
ISBN 13 : 0080541216
Total Pages : 419 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Silicon Germanium Materials and Devices - A Market and Technology Overview to 2006 by : R. Szweda

Download or read book Silicon Germanium Materials and Devices - A Market and Technology Overview to 2006 written by R. Szweda and published by Elsevier. This book was released on 2002-11-26 with total page 419 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first edition of Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 examines the development of the silicon germanium business over a six-year period 2001 to 2006. It analyses the trends in markets, technologies and industry structure and profiles all the major players. It is specifically aimed at users and manufacturers of substrates, epiwafers, equipment and devices. The analysis includes a competitive assessment of the market of silicon germanium vs. gallium arsenide, indium phosphide vs. other forms of silicon. Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 is designed to assist with business plans, R&D and manufacturing strategies. It will be an indispensable aid for managers responsible for business development, technology assessment and market research. The report examines the rapid development of silicon germanium from an R&D curiosity to production status. An extensive treatment from materials through processes to devices and applications it encapsulates the entire silicon germanium business of today and assesses future directions. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

High Performance Radio-frequency and Millimeter-wave Front-end Integrated Circuits Design in Silicon-based Technologies

Author : Jihwan Kim
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (825 download)

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Book Synopsis High Performance Radio-frequency and Millimeter-wave Front-end Integrated Circuits Design in Silicon-based Technologies by : Jihwan Kim

Download or read book High Performance Radio-frequency and Millimeter-wave Front-end Integrated Circuits Design in Silicon-based Technologies written by Jihwan Kim and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Design techniques and procedures to improve performances of radio-frequency and millimeter-wave front-end integrated circuits were developed. Power amplifiers for high data-rate wireless communication applications were designed using CMOS technology employing a novel device resizing and concurrent power-combining technique to implement a multi-mode operation. Comprehensive analysis on the efficiency degradation effect of multi-input-single-output combining transformers with idle input terminals was performed. The proposed discrete resizing and power-combining technique effectively enhanced the efficiency of a linear CMOS power amplifier at back-off power levels. In addition, a novel power-combining transformer that is suitable to generate multi-watt-level output power was proposed and implemented. Employing the proposed power-combining transformer, a high-power linear CMOS power amplifier was designed. Furthermore, receiver building blocks such as a low-noise amplifier, a down-conversion mixer, and a passive balun were implemented using SiGe technology for W-band applications.

Complete Wireless Design

Author : Cotter Sayre
Publisher : McGraw Hill Professional
ISBN 13 : 0071383735
Total Pages : 562 pages
Book Rating : 4.0/5 (713 download)

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Book Synopsis Complete Wireless Design by : Cotter Sayre

Download or read book Complete Wireless Design written by Cotter Sayre and published by McGraw Hill Professional. This book was released on 2001-02-12 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: Easily design today’s wireless systems and circuits Design an entire radio system from the ground up instead of relying on a simple plug-in selection of circuits to be modified. Avoid an arduous trek through theory and mathematical derivations. Cotter Sayre’s Complete Wireless Design covers wireless hardware design more thoroughly than any other handbook —and does it without burying you in math. This new guide from today’s bestselling wireless author gives you all the skills you need to design wireless systems and circuits. If you want to climb the learning curve with grace, and start designing what you need immediately, this reasonably priced resource is your best choice. It’s certain to be the most-used reference in your wireless arsenal for designing cutting-edge filters, amplifiers, RF switches, oscillators, and more. You get: Simplified calculations for impedance matching, analysis of wireless links, and completing a frequency plan Real-world examples of designing with RFIC’s and MMIC’s Full circuit and electromagnetic software simulations More

Low Power RF Circuit Design in Standard CMOS Technology

Author : Unai Alvarado
Publisher : Springer Science & Business Media
ISBN 13 : 3642229875
Total Pages : 248 pages
Book Rating : 4.6/5 (422 download)

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Book Synopsis Low Power RF Circuit Design in Standard CMOS Technology by : Unai Alvarado

Download or read book Low Power RF Circuit Design in Standard CMOS Technology written by Unai Alvarado and published by Springer Science & Business Media. This book was released on 2011-10-18 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low Power Consumption is one of the critical issues in the performance of small battery-powered handheld devices. Mobile terminals feature an ever increasing number of wireless communication alternatives including GPS, Bluetooth, GSM, 3G, WiFi or DVB-H. Considering that the total power available for each terminal is limited by the relatively slow increase in battery performance expected in the near future, the need for efficient circuits is now critical. This book presents the basic techniques available to design low power RF CMOS analogue circuits. It gives circuit designers a complete guide of alternatives to optimize power consumption and explains the application of these rules in the most common RF building blocks: LNA, mixers and PLLs. It is set out using practical examples and offers a unique perspective as it targets designers working within the standard CMOS process and all the limitations inherent in these technologies.

Radio Frequency Circuit Design

Author : W. Alan Davis
Publisher : John Wiley & Sons
ISBN 13 : 1118099478
Total Pages : 302 pages
Book Rating : 4.1/5 (18 download)

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Book Synopsis Radio Frequency Circuit Design by : W. Alan Davis

Download or read book Radio Frequency Circuit Design written by W. Alan Davis and published by John Wiley & Sons. This book was released on 2011-03-16 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on components such as filters, transformers, amplifiers, mixers, and oscillators. Even the phase lock loop chapter (the last in the book) is oriented toward practical circuit design, in contrast to the more systems orientation of most communication texts.

Compressive Sensing Based Algorithms for Electronic Defence

Author : Amit Kumar Mishra
Publisher : Springer
ISBN 13 : 331946700X
Total Pages : 188 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Compressive Sensing Based Algorithms for Electronic Defence by : Amit Kumar Mishra

Download or read book Compressive Sensing Based Algorithms for Electronic Defence written by Amit Kumar Mishra and published by Springer. This book was released on 2016-12-22 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book details some of the major developments in the implementation of compressive sensing in radio applications for electronic defense and warfare communication use. It provides a comprehensive background to the subject and at the same time describes some novel algorithms. It also investigates application value and performance-related parameters of compressive sensing in scenarios such as direction finding, spectrum monitoring, detection, and classification.

Silicon Germanium

Author : Raminderpal Singh
Publisher : John Wiley & Sons
ISBN 13 : 0471660914
Total Pages : 368 pages
Book Rating : 4.4/5 (716 download)

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Book Synopsis Silicon Germanium by : Raminderpal Singh

Download or read book Silicon Germanium written by Raminderpal Singh and published by John Wiley & Sons. This book was released on 2004-03-15 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: "An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM's SiGe technology development programs * Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling * Discuss IBM's design automation and signal integrity knowledge and implementation methodologies * Illustrate design applications in a variety of IBM's SiGe technologies * Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM

CMOS Analog Integrated Circuits

Author : Tertulien Ndjountche
Publisher : CRC Press
ISBN 13 : 1351833189
Total Pages : 813 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis CMOS Analog Integrated Circuits by : Tertulien Ndjountche

Download or read book CMOS Analog Integrated Circuits written by Tertulien Ndjountche and published by CRC Press. This book was released on 2017-12-19 with total page 813 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-speed, power-efficient analog integrated circuits can be used as standalone devices or to interface modern digital signal processors and micro-controllers in various applications, including multimedia, communication, instrumentation, and control systems. New architectures and low device geometry of complementary metaloxidesemiconductor (CMOS) technologies have accelerated the movement toward system on a chip design, which merges analog circuits with digital, and radio-frequency components. CMOS: Analog Integrated Circuits: High-Speed and Power-Efficient Design describes the important trends in designing these analog circuits and provides a complete, in-depth examination of design techniques and circuit architectures, emphasizing practical aspects of integrated circuit implementation. Focusing on designing and verifying analog integrated circuits, the author reviews design techniques for more complex components such as amplifiers, comparators, and multipliers. The book details all aspects, from specification to the final chip, of the development and implementation process of filters, analog-to-digital converters (ADCs), digital-to-analog converters (DACs), phase-locked loops (PLLs), and delay-locked loops (DLLs). It also describes different equivalent transistor models, design and fabrication considerations for high-density integrated circuits in deep-submicrometer process, circuit structures for the design of current mirrors and voltage references, topologies of suitable amplifiers, continuous-time and switched-capacitor circuits, modulator architectures, and approaches to improve linearity of Nyquist converters. The text addresses the architectures and performance limitation issues affecting circuit operation and provides conceptual and practical solutions to problems that can arise in the design process. This reference provides balanced coverage of theoretical and practical issues that will allow the reader to design CMOS analog integrated circuits with improved electrical performance. The chapters contain easy-to-follow mathematical derivations of all equations and formulas, graphical plots, and open-ended design problems to help determine most suitable architecture for a given set of performance specifications. This comprehensive and illustrative text for the design and analysis of CMOS analog integrated circuits serves as a valuable resource for analog circuit designers and graduate students in electrical engineering.

Radio Frequency Circuit Design and Packaging for Silicon-germanium Hetrojunction Bipolar Technology

Author : Chung Hang Poh
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (642 download)

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Book Synopsis Radio Frequency Circuit Design and Packaging for Silicon-germanium Hetrojunction Bipolar Technology by : Chung Hang Poh

Download or read book Radio Frequency Circuit Design and Packaging for Silicon-germanium Hetrojunction Bipolar Technology written by Chung Hang Poh and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this thesis is to design RF circuits using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) for communication system. The packaging effect for the SiGe chip using liquid crystal polymer (LCP) is presented and methodology to derive the model for the package is discussed. Chapter 1, we discuss the overview and benefits of SiGe HBT technology in high frequency circuit design. Chapter 2 presents the methodology of the low noise amplifier (LNA) design and discusses the trade-off between the noise and gain matching. The technique for achieving simultaneous noise and gain matching for the LNA is also presented. Chapter 3 presents an L-band cascaded feedback SiGe low noise amplifier (LNA) design for use in Global Position System (GPS) receivers. Implemented in a 200 GHz SiGe BiCMOS technology, the LNA occupies 1 x 1 millimeter square (including the bondpads). The SiGe LNA exhibits a gain greater than 23 dB from 1.1 to 2.0 GHz, and a noise figure of 2.7 to 3.3 dB from 1.2 to 2.4 GHz. At 1.575 GHz, the 1-dB compression point (P1dB) is 1.73 dBm, with an input third-order intercept point (IIP3) of -3.98 dBm. Lastly, Chapter 4 covers the packaging techniques for the SiGe monolithic integrated circuit (MMIC). We present the modeling of a liquid crystal polymer (LCP) package for use with an X-band SiGe HBT Low Noise Amplifier (LNA). The package consists of a 2 mil LCP laminated over an embedded SiGe LNA, with vias in the LCP serving as interconnects to the LNA bondpads. An accurate model for the packaging interconnects has been developed and verified by comparing to measurement results, and can be used in chip/package co-design.

Performance Prediction of a Future Silicon-germanium Heterojunction Bipolar Transistor Technology Using a Heterogeneous Set of Simulation Tools and Approaches

Download Performance Prediction of a Future Silicon-germanium Heterojunction Bipolar Transistor Technology Using a Heterogeneous Set of Simulation Tools and Approaches PDF Online Free

Author : Tommy Rosenbaum
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (982 download)

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Book Synopsis Performance Prediction of a Future Silicon-germanium Heterojunction Bipolar Transistor Technology Using a Heterogeneous Set of Simulation Tools and Approaches by : Tommy Rosenbaum

Download or read book Performance Prediction of a Future Silicon-germanium Heterojunction Bipolar Transistor Technology Using a Heterogeneous Set of Simulation Tools and Approaches written by Tommy Rosenbaum and published by . This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bipolar complementary metal-oxide-semiconductor (BiCMOS) processescan be considered as the most general solution for RF products, as theycombine the mature manufacturing tools of CMOS with the speed and drivecapabilities of silicon-germanium (SiGe) heterojunction bipolar transistors(HBTs). HBTs in turn are major contenders for partially filling the terahertzgap, which describes the range in which the frequencies generated bytransistors and lasers do not overlap (approximately 0.3THz to 30 THz). Toevaluate the capabilities of such future devices, a reliable prediction methodologyis desirable. Using a heterogeneous set of simulation tools and approachesallows to achieve this goal successively and is beneficial for troubleshooting.Various scientific fields are combined, such as technology computer-aided design(TCAD), compact modeling and parameter extraction.To create a foundation for the simulation environment and to ensure reproducibility,the used material models of the hydrodynamic and drift-diffusionapproaches are introduced in the beginning of this thesis. The physical modelsare mainly based on literature data of Monte Carlo (MC) or deterministicsimulations of the Boltzmann transport equation (BTE). However, the TCADdeck must be calibrated on measurement data too for a reliable performanceprediction of HBTs. The corresponding calibration approach is based onmeasurements of an advanced SiGe HBT technology for which a technology specific parameter set of the HICUM/L2 compact model is extracted for thehigh-speed, medium-voltage and high-voltage transistor versions. With thehelp of the results, one-dimensional transistor characteristics are generatedthat serve as reference for the doping profile and model calibration. By performingelaborate comparisons between measurement-based reference dataand simulations, the thesis advances the state-of-the-art of TCAD-based predictionsand proofs the feasibility of the approach.Finally, the performance of a future technology in 28nm is predicted byapplying the heterogeneous methodology. On the basis of the TCAD results,bottlenecks of the technology are identified.

High Performance Germanium Nanowire Field-effect Transistors and Tunneling Field-effect Transistors

Author : Junghyo Nah
Publisher :
ISBN 13 :
Total Pages : 262 pages
Book Rating : 4.:/5 (7 download)

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Book Synopsis High Performance Germanium Nanowire Field-effect Transistors and Tunneling Field-effect Transistors by : Junghyo Nah

Download or read book High Performance Germanium Nanowire Field-effect Transistors and Tunneling Field-effect Transistors written by Junghyo Nah and published by . This book was released on 2010 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: The scaling of metal-oxide-semiconductor (MOS) field-effect transistors (FETs) has continued for over four decades, providing device performance gains and considerable economic benefits. However, continuing this scaling trend is being impeded by the increase in dissipated power. Considering the exponential increase of the number of transistors per unit area in high speed processors, the power dissipation has now become the major challenge for device scaling, and has led to tremendous research activity to mitigate this issue, and thereby extend device scaling limits. In such efforts, non-planar device structures, high mobility channel materials, and devices operating under different physics have been extensively investigated. Non-planar device geometries reduce short-channel effects by enhancing the electrostatic control over the channel. The devices using high mobility channel materials such as germanium (Ge), SiGe, and III-V can outperform Si MOSFETs in terms of switching speed. Tunneling field-effect transistors use interband tunneling of carriers rather than thermal emission, and can potentially realize low power devices by achieving subthreshold swings below the thermal limit of 60 mV/dec at room temperature. In this work, we examine two device options which can potentially provide high switching speed combined with reduced power, namely germanium nanowire (NW) field-effect transistors (FETs) and tunneling field-effect transistors (TFETs). The devices use germanium (Ge) -- silicon-germanium (Si[subscript x]Ge[subscript 1-x]) core-shell nanowires (NWs) as channel material for the realization of the devices, synthesized using a 'bottom-up' growth process. The device design and material choice are motivated by enhanced electrostatic control in the cylindrical geometry, high hole mobility, and lower bandgap by comparison to Si. We employ low energy ion implantation of boron and phosphorous to realize highly doped contact regions, which in turn provide efficient carrier injection. Our Ge-Si[subscript x]Ge[subscript 1-x] core-shell NW FETs and NW TFETs were fabricated using a conventional CMOS process and their electrical properties were systematically characterized. In addition, TCAD (Technology computer-aided design) simulation is also employed for the analysis of the devices.

Silicon-germanium Heterojunction Bipolar Transistors

Author : John D. Cressler
Publisher : Artech House
ISBN 13 : 1580533612
Total Pages : 590 pages
Book Rating : 4.5/5 (85 download)

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Book Synopsis Silicon-germanium Heterojunction Bipolar Transistors by : John D. Cressler

Download or read book Silicon-germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.

Electrical & Electronics Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 2304 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Electrical & Electronics Abstracts by :

Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:

SiGe Heterojunction Bipolar Transistors

Author : Peter Ashburn
Publisher : John Wiley & Sons
ISBN 13 : 0470090731
Total Pages : 286 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis SiGe Heterojunction Bipolar Transistors by : Peter Ashburn

Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.