Transient Capacitance Measurement Of Deep Defect Levels In Gaas And Si

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Transient Capacitance Measurement of Deep Defect Levels in GaAs and Si

Author : J. T. Schott
Publisher :
ISBN 13 :
Total Pages : 44 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Transient Capacitance Measurement of Deep Defect Levels in GaAs and Si by : J. T. Schott

Download or read book Transient Capacitance Measurement of Deep Defect Levels in GaAs and Si written by J. T. Schott and published by . This book was released on 1976 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt: An understanding of the defects intentionally or unintentionally introduced in semiconductor crystals by crystal growth or device fabrication procedures or by operation in nuclear and space radiation environments is essential to insure proper performance of electronic and optoelectronic systems. The use of diode capacitance measurement techniques for the study of deep defect levels in semiconductors is discussed, including a recently developed technique based on transient capacitance effects. The theoretical and experimental details of this new technique, involving the use of a lock-in amplifier to process capacitance transients, are presented in appendices. This technique is applied to Schottky barrier and asymmetrical p-n junction diodes of gallium arsenide and silicon, which are primary materials of interest in a variety of device applications. Co60-gamma ray and electron irradiations on unimplanted material produce levels that are similar to some found in the complex defect spectra of ion-damaged samples.

Transient Capacitance Measurement of Deep Defect Levels in GaAs and Si

Author : J. T. Schott
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (134 download)

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Book Synopsis Transient Capacitance Measurement of Deep Defect Levels in GaAs and Si by : J. T. Schott

Download or read book Transient Capacitance Measurement of Deep Defect Levels in GaAs and Si written by J. T. Schott and published by . This book was released on 1976 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: An understanding of the defects intentionally or unintentionally introduced in semiconductor crystals by crystal growth or device fabrication procedures or by operation in nuclear and space radiation environments is essential to insure proper performance of electronic and optoelectronic systems. The use of diode capacitance measurement techniques for the study of deep defect levels in semiconductors is discussed, including a recently developed technique based on transient capacitance effects. The theoretical and experimental details of this new technique, involving the use of a lock-in amplifier to process capacitance transients, are presented in appendices. This technique is applied to Schottky barrier and asymmetrical p-n junction diodes of gallium arsenide and silicon, which are primary materials of interest in a variety of device applications. Co60-gamma ray and electron irradiations on unimplanted material produce levels that are similar to some found in the complex defect spectra of ion-damaged samples.

A Study of Deep Levels in GaAs by Deep Level Transient Spectroscopy

Author : Richard Alan Stall
Publisher :
ISBN 13 :
Total Pages : 140 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis A Study of Deep Levels in GaAs by Deep Level Transient Spectroscopy by : Richard Alan Stall

Download or read book A Study of Deep Levels in GaAs by Deep Level Transient Spectroscopy written by Richard Alan Stall and published by . This book was released on 1979 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Identification of Defects in Semiconductors

Author :
Publisher : Academic Press
ISBN 13 : 008086449X
Total Pages : 449 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis Identification of Defects in Semiconductors by :

Download or read book Identification of Defects in Semiconductors written by and published by Academic Press. This book was released on 1998-10-27 with total page 449 pages. Available in PDF, EPUB and Kindle. Book excerpt: GENERAL DESCRIPTION OF THE SERIESSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUMEThis volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.

An Introductory Guide to EC Competition Law and Practice

Author : Valentine Korah
Publisher :
ISBN 13 :
Total Pages : 2354 pages
Book Rating : 4.4/5 (11 download)

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Book Synopsis An Introductory Guide to EC Competition Law and Practice by : Valentine Korah

Download or read book An Introductory Guide to EC Competition Law and Practice written by Valentine Korah and published by . This book was released on 1994 with total page 2354 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electrical Characterization of Process Induced Defects in GaAs by Laplace Deep Level Transient Spectroscopy

Author : Fatemeh Taghizadeh
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (116 download)

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Book Synopsis Electrical Characterization of Process Induced Defects in GaAs by Laplace Deep Level Transient Spectroscopy by : Fatemeh Taghizadeh

Download or read book Electrical Characterization of Process Induced Defects in GaAs by Laplace Deep Level Transient Spectroscopy written by Fatemeh Taghizadeh and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this study, we investigated defects introduced in n-GaAs with different carrier densities by electron irradiation and sputter deposition by means of conventional deep level transient spectroscopy (DLTS) as well as high resolution Laplace deep-level transient spectroscopy (LDLTS). In electron-irradiated material, we found that the well-known E3 defect, of which the origin has long been under discussion, consisted of three components (E3a, E3b and E3c). By constructing Arrhenius plots and performing annealing studies, and by comparing our results with literature, we could deduce that the E3a, the main component of the E3 is related to the VAs, while the E3b is related to the Asi and the E3c was related to the VGa-SiGa. In addition, the E3c was metastable and had a concentration that increased linearly with doping concentration. Further electrical characterization included I-V and C-V measurements, as well as measurements of the introduction rate, metastability, electric field emission mechanisms and capture cross-sections. For the sputter-deposited Schottky contacts, DLTS depth profiles showed that the defects were confined close to the surface and that their depth range depended strongly on the doping concentration, and corresponded roughly with the depletion depth of the Schottky diodes. We conclude that the diffusion of these defects was stronlgy enhanced by the conditions (free carrier density and electric field) in the depletion region. Six defects (S1, S2, S3, S4, S5 and S6) were observed by conventional DLTS and were further investigated by L-DLTS. One of these defects, the S6, could be split into two components while three of them (S1, S3 and S5) were metastable. The transformation kinetics of the metastable defects were investigated and we conclude that the prefactor of S5 to S3 transformation was related to free carrier emission but for the S3 to S5 transformation is larger than would be expected. The activation energy of these transformations was similar to that required for arsenic vacancy (VAs) diffusion. The real capture cross sections as well as capture barriers were measured for the S3, S4 and S5 defects.

ERDA Energy Research Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 640 pages
Book Rating : 4.:/5 (319 download)

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Book Synopsis ERDA Energy Research Abstracts by :

Download or read book ERDA Energy Research Abstracts written by and published by . This book was released on 1977 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Scientific and Technical Aerospace Reports

Author :
Publisher :
ISBN 13 :
Total Pages : 984 pages
Book Rating : 4.X/5 (4 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1976 with total page 984 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Energy Research Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 444 pages
Book Rating : 4.0/5 ( download)

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Download or read book Energy Research Abstracts written by and published by . This book was released on 1994 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Defect Recognition and Image Processing in Semiconductors 1997

Author : J. Doneker
Publisher : Routledge
ISBN 13 : 1351456466
Total Pages : 552 pages
Book Rating : 4.3/5 (514 download)

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Book Synopsis Defect Recognition and Image Processing in Semiconductors 1997 by : J. Doneker

Download or read book Defect Recognition and Image Processing in Semiconductors 1997 written by J. Doneker and published by Routledge. This book was released on 2017-11-22 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.

Deep Level Transient Capacitance Measurements of GaSb Self-Assembled Quantum Dots

Author :
Publisher :
ISBN 13 :
Total Pages : 8 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Deep Level Transient Capacitance Measurements of GaSb Self-Assembled Quantum Dots by :

Download or read book Deep Level Transient Capacitance Measurements of GaSb Self-Assembled Quantum Dots written by and published by . This book was released on 2000 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: Deep level transient spectroscopy (DLTS) measurements have been made on GaAs n(+)p diodes containing GaSb self-assembled quantum dots and control junctions without dots. The self-assembled dots were formed by molecular beam epitaxy using the Stranski-Krastanov growth mode. The dots are located in the depletion region on the p side of the junction where they act as a potential well that may capture and emit holes. Spectra recorded for temperatures between 77 and 440 K reveal peaks in diodes containing dots. A control sample with a GaSb wetting layer was found to contain a single broad high temperature peak that is similar to a line found in the GaSb quantum dot samples. No lines were found in the spectra of a control sample prepared without GaSb. DLTS profiling procedures indicate that one of the peaks is due to a quantum-confined energy level associated with the GaSb dots while the others are due to defects in the GaAs around the dots. The peak identified as a quantum-confined energy level shifts to higher temperatures and its intensity decreases on increasing the reverse bias. The activation energy for the quantum-confined level increases from 400 meV when measured at a low reverse bias to 550 meV for a large reverse bias. Lines with activation energies of 400, 640, and 840 meV are associated with defects in the GaAs based on the bias dependence of their peak positions and amplitudes.

Materials for Optoelectronic Devices, OEICs and Photonics

Author : H. Schlötterer
Publisher : Elsevier
ISBN 13 : 0444596755
Total Pages : 542 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Materials for Optoelectronic Devices, OEICs and Photonics by : H. Schlötterer

Download or read book Materials for Optoelectronic Devices, OEICs and Photonics written by H. Schlötterer and published by Elsevier. This book was released on 1991-10-08 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of the contributions in this volume is to give a current overview on the basic properties and applications of semiconductor and nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, glasses, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques for growth (LPE to MOMBE) and for processing (from surface passivation to ion beams). Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic and nonlinear optical materials development, as well as indicating trends and also future markets for optoelectronic devices.

Scientific and Technical Aerospace Reports

Author :
Publisher :
ISBN 13 :
Total Pages : 1284 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1982 with total page 1284 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advances in Electronics and Electron Physics

Author : Peter W. Hawkes
Publisher : Academic Press
ISBN 13 : 0120146614
Total Pages : 421 pages
Book Rating : 4.1/5 (21 download)

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Book Synopsis Advances in Electronics and Electron Physics by : Peter W. Hawkes

Download or read book Advances in Electronics and Electron Physics written by Peter W. Hawkes and published by Academic Press. This book was released on 1983-11 with total page 421 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Chemical Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 2540 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Topics in Growth and Device Processing of III-V Semiconductors

Author : S. J. Pearton
Publisher : World Scientific
ISBN 13 : 9789810218843
Total Pages : 568 pages
Book Rating : 4.2/5 (188 download)

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Book Synopsis Topics in Growth and Device Processing of III-V Semiconductors by : S. J. Pearton

Download or read book Topics in Growth and Device Processing of III-V Semiconductors written by S. J. Pearton and published by World Scientific. This book was released on 1996 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.

Defects in Microelectronic Materials and Devices

Author : Daniel M. Fleetwood
Publisher : CRC Press
ISBN 13 : 1420043773
Total Pages : 772 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Defects in Microelectronic Materials and Devices by : Daniel M. Fleetwood

Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe