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Thermally Stable Metal Gaas Contacts
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Book Synopsis Thermally Stable Metal/GaAs Contacts by : Jian Ding
Download or read book Thermally Stable Metal/GaAs Contacts written by Jian Ding and published by . This book was released on 1989 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Thermally Stable Metal/GaAs Contacts by : Chien Ting
Download or read book Thermally Stable Metal/GaAs Contacts written by Chien Ting and published by . This book was released on 1989 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Thermally Stable Ohmic Contact to N-type GaAs by : Masanori Murakami
Download or read book Thermally Stable Ohmic Contact to N-type GaAs written by Masanori Murakami and published by . This book was released on 1987 with total page 23 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Thermally Stable Ohmic Contacts to N-type GaAs by : Masanori Murakami
Download or read book Thermally Stable Ohmic Contacts to N-type GaAs written by Masanori Murakami and published by . This book was released on 1987 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contacts to N-GaAs and N-In05̣3Ga04̣7As by : David Yuxiao Chen
Download or read book Ohmic Contacts to N-GaAs and N-In05̣3Ga04̣7As written by David Yuxiao Chen and published by . This book was released on 1997 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Interfacial Phenomena in the Contact Metallization of GaAs with Ni-based Intermetallic Alloys by : Chia-Hong Jan
Download or read book Interfacial Phenomena in the Contact Metallization of GaAs with Ni-based Intermetallic Alloys written by Chia-Hong Jan and published by . This book was released on 1991 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Mechanism of the Schottky Contact Formation in Metal/GaAs System by : Prashant Balvant Phatak
Download or read book Mechanism of the Schottky Contact Formation in Metal/GaAs System written by Prashant Balvant Phatak and published by . This book was released on 1995 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis High Temperature Stability of W/GaAs Schottky Contacts by : Steven KaYin Cheung
Download or read book High Temperature Stability of W/GaAs Schottky Contacts written by Steven KaYin Cheung and published by . This book was released on 1986 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low Resistivity Ohmic Contacts to Moderately Doped N-GaAs with Low Temperature Processing by :
Download or read book Low Resistivity Ohmic Contacts to Moderately Doped N-GaAs with Low Temperature Processing written by and published by . This book was released on 1994 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: A low-temperature process for forming ohmic contacts to moderately doped GaAs has been optimized using a PdGe metallization scheme. Minimum specific contact resistivity of 1.5 x 10−6 -cm2 has been obtained with a low anneal temperature of 250 C. Results for optimizing both time and temperature are reported and compared to GeAu n-GaAs contacts. Material compositions was analyzed by x-ray photoelectron spectroscopy and circuit metal interconnect contact resisitivity to the low-temperature processed PdGe contacts is reported. For the lowest temperature anneals considered, excess Ge on the ohmic contact layer is suspected of degrading interconnect metal contacts, while higher temperature anneals permitted interconnect metal formation with negligible contact resistivity. Atomic force microscopy measurements showed that the PdGe surface morphology is much more uniform than standard GeAu contacts.
Book Synopsis The Development and Application of Nonspiking Ohmic Contacts Formed by Solid-phase Reactions to N-type Gallium Arsenide by : Long-Ching Wang
Download or read book The Development and Application of Nonspiking Ohmic Contacts Formed by Solid-phase Reactions to N-type Gallium Arsenide written by Long-Ching Wang and published by . This book was released on 1991 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Thermally Stable Ohmic and Schottky Contacts to GaN by : Lars Fredrik Voss
Download or read book Thermally Stable Ohmic and Schottky Contacts to GaN written by Lars Fredrik Voss and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: This dissertation is focused on the development of Ohmic and Schottky contacts to both nand p-type Gallium Nitride for use in microelectronic and optical devices. The goal is to develop low resistance contacts with greater thermal budgets and superior thermal aging characteristics to those commonly in use today as well as to understand the mechanisms by which these contacts may fail. In addition, p-type Ohmic contacts have been used to fabricate light emitting diodes (LEDs) which display far superior aging properties than those made with conventional Ni/Au contacts. Ohmic contacts to p-GaN were fabricated using a variety of refractory materials. The materials examined were of three basic types: boride, nitride, and the refractory metal Ir. The boride family includes W2B, W2B5, CrB2, ZrB2, and TiB2. The nitrides examined were TaN, TiN, and ZrN. Contacts based on these materials were fabricated using either a GaN//Ni/Au/X/Ti/Au, GaN//X/Ti/Au, or GaN//Ni/X/Au scheme, where X is the refractory material. Contact resistances as low as ~1 x 10-4 ohm/cm2 were consistently achieved after annealing at temperatures from 500-1000°C for 60 s in N2 using these materials for p-GaN with a carrier concentration of ~1 x 1017 cm-3.
Book Synopsis Contacts to Semiconductors by : L. J. Brillson
Download or read book Contacts to Semiconductors written by L. J. Brillson and published by William Andrew. This book was released on 1993-12-31 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt: . It is directed to microelectronics and optoelectronics industry researchers, designers, prototype builders, and process engineers. Researchers in physics, applied physics, electrical engineering and the materials science will also find this book an essential reference.
Book Synopsis Ohmic Contacts to P-type GaAs by Rapid Thermal Processing by : Yicheng Lu
Download or read book Ohmic Contacts to P-type GaAs by Rapid Thermal Processing written by Yicheng Lu and published by . This book was released on 1988 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metal Contacts on ZnSe and GaN by : Kristen Joy Duxstad
Download or read book Metal Contacts on ZnSe and GaN written by Kristen Joy Duxstad and published by . This book was released on 1997 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic and Schottky Contacts to N-GaAs Using Thermal and Scanned Electron Beam Annealing by : Krishnamachar Prasad
Download or read book Ohmic and Schottky Contacts to N-GaAs Using Thermal and Scanned Electron Beam Annealing written by Krishnamachar Prasad and published by . This book was released on 1990 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :National Aeronautics and Space Administration (NASA) Publisher :Createspace Independent Publishing Platform ISBN 13 :9781725075764 Total Pages :30 pages Book Rating :4.0/5 (757 download)
Book Synopsis Aging Behavior of Au-Based Ohmic Contacts to Gaas by : National Aeronautics and Space Administration (NASA)
Download or read book Aging Behavior of Au-Based Ohmic Contacts to Gaas written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-08-16 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat treatment) contacts made to thin emitter (0.15 micrometer) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 micrometer) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented. Fatemi, Navid S. Unspecified Center NASA-CR-182146, E-4171, NAS 1.26:182146 NAS3-24105; RTOP 506-41-11...
Book Synopsis Investigation of the Interface Integrity of the Thermally Stable WN/GaAs Schottky Contracts by :
Download or read book Investigation of the Interface Integrity of the Thermally Stable WN/GaAs Schottky Contracts written by and published by . This book was released on 1989 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: