The Formation of Structural Imperfections in Semiconductor Silicon

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Author :
Publisher : Cambridge Scholars Publishing
ISBN 13 : 152752342X
Total Pages : 281 pages
Book Rating : 4.5/5 (275 download)

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Book Synopsis The Formation of Structural Imperfections in Semiconductor Silicon by : V. I. Talanin

Download or read book The Formation of Structural Imperfections in Semiconductor Silicon written by V. I. Talanin and published by Cambridge Scholars Publishing. This book was released on 2018-12-14 with total page 281 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic. This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students.

Charged Semiconductor Defects

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 1848820593
Total Pages : 304 pages
Book Rating : 4.8/5 (488 download)

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Book Synopsis Charged Semiconductor Defects by : Edmund G. Seebauer

Download or read book Charged Semiconductor Defects written by Edmund G. Seebauer and published by Springer Science & Business Media. This book was released on 2008-11-14 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

Imperfections and Impurities in Semiconductor Silicon

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Author :
Publisher : John Wiley & Sons
ISBN 13 :
Total Pages : 408 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Imperfections and Impurities in Semiconductor Silicon by : K. V. Ravi

Download or read book Imperfections and Impurities in Semiconductor Silicon written by K. V. Ravi and published by John Wiley & Sons. This book was released on 1981 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Defects and Impurities in Silicon Materials

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Author :
Publisher : Springer
ISBN 13 : 4431558004
Total Pages : 498 pages
Book Rating : 4.4/5 (315 download)

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Book Synopsis Defects and Impurities in Silicon Materials by : Yutaka Yoshida

Download or read book Defects and Impurities in Silicon Materials written by Yutaka Yoshida and published by Springer. This book was released on 2016-03-30 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

Proceedings of the Second Symposium on Defects in Silicon

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Author :
Publisher :
ISBN 13 :
Total Pages : 716 pages
Book Rating : 4.:/5 (44 download)

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Book Synopsis Proceedings of the Second Symposium on Defects in Silicon by : W. Murray Bullis

Download or read book Proceedings of the Second Symposium on Defects in Silicon written by W. Murray Bullis and published by . This book was released on 1991 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Structural Imperfections in Silicon P-n Junctions

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Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (947 download)

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Book Synopsis Structural Imperfections in Silicon P-n Junctions by : H. Queisser

Download or read book Structural Imperfections in Silicon P-n Junctions written by H. Queisser and published by . This book was released on 1961 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductor Silicon 1994

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Author :
Publisher : The Electrochemical Society
ISBN 13 : 9781566770422
Total Pages : 1284 pages
Book Rating : 4.7/5 (74 download)

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Book Synopsis Semiconductor Silicon 1994 by : Howard R. Huff

Download or read book Semiconductor Silicon 1994 written by Howard R. Huff and published by The Electrochemical Society. This book was released on 1994 with total page 1284 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Surfaces and Formation of Interfaces

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Publisher : World Scientific
ISBN 13 : 9789810232863
Total Pages : 580 pages
Book Rating : 4.2/5 (328 download)

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Book Synopsis Silicon Surfaces and Formation of Interfaces by : Jarek Dabrowski

Download or read book Silicon Surfaces and Formation of Interfaces written by Jarek Dabrowski and published by World Scientific. This book was released on 2000 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded by a brief overview which categorizes the features and physical mechanisms before the details are presented. The literature is easily available, and the references am numerous and organized in tables, allowing a search without the need to browse through the text. Though this volume focuses on a scientific understanding of physics on the atomistic and mesoscopic levels, it also highlights existing and potential links between basic research in surface science and applications in the silicon industry. It will be valuable to anyone writing a paper, thesis, or proposal in the field of silicon surfaces.

Defect and Impurity Engineered Semiconductors and Devices III: Volume 719

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Author :
Publisher :
ISBN 13 :
Total Pages : 522 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Defect and Impurity Engineered Semiconductors and Devices III: Volume 719 by : S. Ashok

Download or read book Defect and Impurity Engineered Semiconductors and Devices III: Volume 719 written by S. Ashok and published by . This book was released on 2002-08-09 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.

Imperfections and Active Centres in Semiconductors

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Author :
Publisher : Elsevier
ISBN 13 : 1483222810
Total Pages : 386 pages
Book Rating : 4.4/5 (832 download)

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Book Synopsis Imperfections and Active Centres in Semiconductors by : R. G. Rhodes

Download or read book Imperfections and Active Centres in Semiconductors written by R. G. Rhodes and published by Elsevier. This book was released on 2014-05-12 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: Imperfections and Active Centres in Semiconductors discusses principles of semiconduction theory in terms of the band model, and electrical properties as regards chemical or physical defects in the lattice structures. The book reviews the fundamental concepts of semiconductor crystals, semiconduction, silicon, and the atomic lattice of germanium. The Frenkel defect accounts for displaced atoms in the lattice that move into spaces between normal atom positions. The text describes dislocations or line defects, the motion and generation of dislocations, as well as the geometry of the dislocations in the diamond. Honrstra (1958), who shows the geometry of the dislocation structures through a diagram, also describes the geometry of more complicated types of dislocation in the diamond lattice. The book explains X-ray diffraction and crystal imperfections in which the amount of X-radiation reflected from a crystal specimen depends on the perfection or on the atomic structure of the reflecting planes. The electron microscope can reveal more detail in higher resolution, for example, the actual arrangement of the molecules around an edge dislocation has been exposed in a platinum phthalocyanine crystal. The book also describes the fabrication of semiconductor devices where the crystals are cut with an abrasive saw and then ground with fine abrasive. The text can be used by physicists, engineers, or technologists in the allied fields of solid state physics and materials engineering.

Semiconductor Silicon Crystal Technology

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Author :
Publisher : Elsevier
ISBN 13 : 0323150489
Total Pages : 435 pages
Book Rating : 4.3/5 (231 download)

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Book Synopsis Semiconductor Silicon Crystal Technology by : Fumio Shimura

Download or read book Semiconductor Silicon Crystal Technology written by Fumio Shimura and published by Elsevier. This book was released on 2012-12-02 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Silicon Crystal Technology provides information pertinent to silicon, which is the dominant material in the semiconductor industry. This book discusses the technology of integrated circuits (ICs) in electronic materials manufacturer. Comprised of eight chapters, this book provides an overview of the basic science, silicon materials, IC device fabrication processes, and their interaction for enhancing both the processes and materials. This text then proceeds with a discussion of the atomic structure and bonding mechanisms in order to understand the nature and formation of crystal structures, which are the fundamentals of material science. Other chapters consider the technological crystallography and classify natural crystal morphologies based on observation. The final chapter deals with the interrelationships among silicon material characteristics, circuit design, and IC fabrication in order to ensure the fabrication of very-large-scale-integration/ultra-large-scale-integration circuits. This book is a valuable resource for graduate students, physicists, engineers, materials scientists, and professionals involved in semiconductor industry.

Semiconductor Wafer Bonding : Science, Technology, and Applications V

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Author :
Publisher : The Electrochemical Society
ISBN 13 : 9781566772587
Total Pages : 498 pages
Book Rating : 4.7/5 (725 download)

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Book Synopsis Semiconductor Wafer Bonding : Science, Technology, and Applications V by : Charles E. Hunt

Download or read book Semiconductor Wafer Bonding : Science, Technology, and Applications V written by Charles E. Hunt and published by The Electrochemical Society. This book was released on 2001 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Nanosilicon

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Publisher : CRC Press
ISBN 13 : 1466594233
Total Pages : 734 pages
Book Rating : 4.4/5 (665 download)

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Book Synopsis Nanosilicon by : Anatoly A. Ischenko

Download or read book Nanosilicon written by Anatoly A. Ischenko and published by CRC Press. This book was released on 2014-07-23 with total page 734 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanosilicon: Properties, Synthesis, Applications, Methods of Analysis and Control examines the latest developments on the physics and chemistry of nanosilicon. The book focuses on methods for producing nanosilicon, its electronic and optical properties, research methods to characterize its spectral and structural properties, and its possible applic

Semiconductor Silicon 2002

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Author :
Publisher : The Electrochemical Society
ISBN 13 : 9781566773744
Total Pages : 650 pages
Book Rating : 4.7/5 (737 download)

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Book Synopsis Semiconductor Silicon 2002 by : Howard R. Huff

Download or read book Semiconductor Silicon 2002 written by Howard R. Huff and published by The Electrochemical Society. This book was released on 2002 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Crystalline Silicon

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Author :
Publisher : BoD – Books on Demand
ISBN 13 : 9533075872
Total Pages : 360 pages
Book Rating : 4.5/5 (33 download)

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Book Synopsis Crystalline Silicon by : Sukumar Basu

Download or read book Crystalline Silicon written by Sukumar Basu and published by BoD – Books on Demand. This book was released on 2011-07-27 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: The exciting world of crystalline silicon is the source of the spectacular advancement of discrete electronic devices and solar cells. The exploitation of ever changing properties of crystalline silicon with dimensional transformation may indicate more innovative silicon based technologies in near future. For example, the discovery of nanocrystalline silicon has largely overcome the obstacles of using silicon as optoelectronic material. The further research and development is necessary to find out the treasures hidden within this material. The book presents different forms of silicon material, their preparation and properties. The modern techniques to study the surface and interface defect states, dislocations, and so on, in different crystalline forms have been highlighted in this book. This book presents basic and applied aspects of different crystalline forms of silicon in wide range of information from materials to devices.

Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 3709105978
Total Pages : 576 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by : Peter Pichler

Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Comprehensive Semiconductor Science and Technology

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Author :
Publisher : Newnes
ISBN 13 : 0080932282
Total Pages : 3572 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Comprehensive Semiconductor Science and Technology by :

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts