The Effects of Thermal Neutron Transmutation Doping in Silicon

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ISBN 13 :
Total Pages : 48 pages
Book Rating : 4.:/5 (498 download)

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Book Synopsis The Effects of Thermal Neutron Transmutation Doping in Silicon by : Charles R. Mandelbaum

Download or read book The Effects of Thermal Neutron Transmutation Doping in Silicon written by Charles R. Mandelbaum and published by . This book was released on 1966 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Neutron Transmutation Doping in Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 1468482491
Total Pages : 368 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Neutron Transmutation Doping in Semiconductors by : J. Meese

Download or read book Neutron Transmutation Doping in Semiconductors written by J. Meese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.

Neutron-Transmutation-Doped Silicon

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Publisher : Springer Science & Business Media
ISBN 13 : 1461332613
Total Pages : 493 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Neutron-Transmutation-Doped Silicon by : Jens Guldberg

Download or read book Neutron-Transmutation-Doped Silicon written by Jens Guldberg and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 493 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.

Neutron Transmutation Doping of Semiconductor Materials

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Publisher : Springer Science & Business Media
ISBN 13 : 1461326958
Total Pages : 337 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Neutron Transmutation Doping of Semiconductor Materials by : Robert D. Larrabee

Download or read book Neutron Transmutation Doping of Semiconductor Materials written by Robert D. Larrabee and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.

Technical Impediments to a More Effective Utilization of Neutron Transmutation Doped Silicon for High-power Device Fabrication

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ISBN 13 :
Total Pages : 40 pages
Book Rating : 4.3/5 (121 download)

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Book Synopsis Technical Impediments to a More Effective Utilization of Neutron Transmutation Doped Silicon for High-power Device Fabrication by : D. R. Meyers

Download or read book Technical Impediments to a More Effective Utilization of Neutron Transmutation Doped Silicon for High-power Device Fabrication written by D. R. Meyers and published by . This book was released on 1980 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Neutron Transmutation Doping of Isotopically Enriched Silicon

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ISBN 13 :
Total Pages : 142 pages
Book Rating : 4.:/5 (35 download)

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Book Synopsis Neutron Transmutation Doping of Isotopically Enriched Silicon by : Christopher Yuan-Ting Liao

Download or read book Neutron Transmutation Doping of Isotopically Enriched Silicon written by Christopher Yuan-Ting Liao and published by . This book was released on 2006 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Neutron Transmutation Doping in Hydrogenated Amorphous Silicon

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ISBN 13 :
Total Pages : 8 pages
Book Rating : 4.:/5 (125 download)

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Book Synopsis Neutron Transmutation Doping in Hydrogenated Amorphous Silicon by : H. Hamanaka

Download or read book Neutron Transmutation Doping in Hydrogenated Amorphous Silicon written by H. Hamanaka and published by . This book was released on 1984 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: A neutron irradiation for thermal neutron flux density of 5 x 1011/cm2s and irradiation time of 10 hr was applied to hydrogenated amorphous silicon (a-Si:H). The density of 31P produced by the neutron transmutation doping (NTD) was estimated to be 1012/cm3. Dark and photo conductivities were measured before and after NTD in parallel with ESR measurements. The annealing behavior of the irradiation damage was studied up to the growth temperature of a-Si:H. Dark conductivity of the well-annealed NTD a-Si:H shows an activation type conduction above room temperature with activation energy of 0.69 eV.

Fabrication of Silicon Microcircuits by Neutron Transmutation Doping

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ISBN 13 :
Total Pages : 84 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Fabrication of Silicon Microcircuits by Neutron Transmutation Doping by : Carl N. Klahr

Download or read book Fabrication of Silicon Microcircuits by Neutron Transmutation Doping written by Carl N. Klahr and published by . This book was released on 1966 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication of Semiconductor Devices by Neutron Transmutation Doping

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ISBN 13 :
Total Pages : 174 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Fabrication of Semiconductor Devices by Neutron Transmutation Doping by :

Download or read book Fabrication of Semiconductor Devices by Neutron Transmutation Doping written by and published by . This book was released on 1962 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Neutron Transmutation Doping of Silicon at Research Reactors

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ISBN 13 : 9789201300102
Total Pages : 95 pages
Book Rating : 4.3/5 (1 download)

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Book Synopsis Neutron Transmutation Doping of Silicon at Research Reactors by : International Atomic Energy Agency

Download or read book Neutron Transmutation Doping of Silicon at Research Reactors written by International Atomic Energy Agency and published by . This book was released on 2012 with total page 95 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication details the processes and history of neutron transmutation doping of silicon, particularly its commercial pathway, followed by the requirements for a technologically modern and economically viable production scheme and the current trends in the global market for semiconductor products. It should serve as guidelines on the technical requirements, involved processes and required quality standards for the transmission of sound practices and advice for research reactor managers and operators planning commercial scale production of silicon. Furthermore, a detailed and specific database of most of the worlds research reactor facilities in this domain is included, featuring their irradiation capabilities, associated production capacities and processing.

Effects of Low-Temperature Neutron Irradiation on Arsenic-Doped Silicon

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ISBN 13 :
Total Pages : 78 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis Effects of Low-Temperature Neutron Irradiation on Arsenic-Doped Silicon by : A. H. Kalma

Download or read book Effects of Low-Temperature Neutron Irradiation on Arsenic-Doped Silicon written by A. H. Kalma and published by . This book was released on 1977 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt: Arsenic-doped silicon material obtained from LWIR detector manufacturers (Aerojet and Rockwell) or a supplier of these manufacturers (High Performance Technology) was irradiated with neutrons at 10K, and the optical response and electrical properties were measured. The material was of the grade from which quality LWIR detectors could be fabricated. The primary effect of irradiation was the net introduction of acceptor centers at a rate of approximately 16/cm. This introduction rate was independent of oxygen concentration in the material, but its dependence on arsenic or acceptor concentration was not determined in this program. The primary effect of the radiation-induced acceptors is to compensate the arsenic levels, which decreases the majority-carrier lifetime and thus the responsivity. The acceptors also decrease the carrier concentration at low temperature. Irradiation-induced mobility changes are relatively slight, showing that the low-temperature mobility prior to irradiation is primarily set by neutral impurity scattering. Some band tailing is produced by the radiation, but this is unstable and anneals to a large extent by 100K. It is replaced by a short-wavelength depression (or a long-wavelength enhancement) in the spectral response, which may be another manifestation of the same defects. In general, the damage effects were quite stable, and few changes were observed in the measured properties up to annealing temperatures of 400C.

Neutron-Transmutation-Doped Silicon

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ISBN 13 : 9781461332626
Total Pages : 520 pages
Book Rating : 4.3/5 (326 download)

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Book Synopsis Neutron-Transmutation-Doped Silicon by : Jens Guldberg

Download or read book Neutron-Transmutation-Doped Silicon written by Jens Guldberg and published by . This book was released on 2014-01-15 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Rapid Thermal Annealing of Neutron Transmutation Doped Silicon

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ISBN 13 : 9780642598691
Total Pages : 8 pages
Book Rating : 4.5/5 (986 download)

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Book Synopsis Rapid Thermal Annealing of Neutron Transmutation Doped Silicon by : Ewan Macelwee Lawson

Download or read book Rapid Thermal Annealing of Neutron Transmutation Doped Silicon written by Ewan Macelwee Lawson and published by . This book was released on 1987 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Characterization and Applications of Neutron Transmutation Doped Germanium

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ISBN 13 :
Total Pages : 354 pages
Book Rating : 4.:/5 (7 download)

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Book Synopsis Characterization and Applications of Neutron Transmutation Doped Germanium by : In-Shik Park

Download or read book Characterization and Applications of Neutron Transmutation Doped Germanium written by In-Shik Park and published by . This book was released on 1988 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt:

NBS Special Publication

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ISBN 13 :
Total Pages : 40 pages
Book Rating : 4.:/5 (2 download)

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Book Synopsis NBS Special Publication by :

Download or read book NBS Special Publication written by and published by . This book was released on 1980 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Energy Research Abstracts

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ISBN 13 :
Total Pages : 782 pages
Book Rating : 4.3/5 (129 download)

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Book Synopsis Energy Research Abstracts by :

Download or read book Energy Research Abstracts written by and published by . This book was released on 1995 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Neutron Transmutation Doping of Silicon for the Production of Radiation Detectors

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ISBN 13 : 9780642598714
Total Pages : 11 pages
Book Rating : 4.5/5 (987 download)

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Book Synopsis Neutron Transmutation Doping of Silicon for the Production of Radiation Detectors by : D. Alexiev

Download or read book Neutron Transmutation Doping of Silicon for the Production of Radiation Detectors written by D. Alexiev and published by . This book was released on 1987 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt: