Technical Digest 2008

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Semiconductor Memories and Systems

Author : Andrea Redaelli
Publisher : Woodhead Publishing
ISBN 13 : 0128209461
Total Pages : 364 pages
Book Rating : 4.1/5 (282 download)

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Book Synopsis Semiconductor Memories and Systems by : Andrea Redaelli

Download or read book Semiconductor Memories and Systems written by Andrea Redaelli and published by Woodhead Publishing. This book was released on 2022-06-07 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability.Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. - Features contributions from experts from leading companies in semiconductor memory - Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories - Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory - Includes emerging storage class memory technologies such as phase change memory

Physics and Technology of High-k Materials 9

Author : S. Kar
Publisher : The Electrochemical Society
ISBN 13 : 1607682575
Total Pages : 504 pages
Book Rating : 4.6/5 (76 download)

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Book Synopsis Physics and Technology of High-k Materials 9 by : S. Kar

Download or read book Physics and Technology of High-k Materials 9 written by S. Kar and published by The Electrochemical Society. This book was released on 2011 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fundamentals of Fiber Lasers and Fiber Amplifiers

Author : Vartan V. Ter-Mikirtychev
Publisher : Springer Nature
ISBN 13 : 3030338908
Total Pages : 345 pages
Book Rating : 4.0/5 (33 download)

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Book Synopsis Fundamentals of Fiber Lasers and Fiber Amplifiers by : Vartan V. Ter-Mikirtychev

Download or read book Fundamentals of Fiber Lasers and Fiber Amplifiers written by Vartan V. Ter-Mikirtychev and published by Springer Nature. This book was released on 2019-12-30 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the fundamental aspects of fiber lasers and fiber amplifiers, and includes a wide range of material from laser physics fundamentals to state-of-the-art topics in this rapidly growing field of quantum electronics. This expanded and updated new edition includes substantial new material on nonlinear frequency conversion and Raman fiber lasers and amplifiers, as well as an expanded list of references inclusive of the recent literature in the field. Emphasis is placed on the nonlinear processes taking place in fiber lasers and amplifiers, their similarities, differences to, and their advantages over other solid-state lasers. The reader will learn the basic principles of solid-state physics and optical spectroscopy of laser active centers in fibers, the main operational laser regimes, and will receive practical recommendations and suggestions on fiber laser research, laser applications, and laser product development. The book will be useful for students, researchers, and professional physicists and engineers who work with lasers in the optical and telecommunications field, as well as those in the chemical and biological industries.

Oxygen Compounds—Advances in Research and Application: 2013 Edition

Author :
Publisher : ScholarlyEditions
ISBN 13 : 1490103155
Total Pages : 804 pages
Book Rating : 4.4/5 (91 download)

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Book Synopsis Oxygen Compounds—Advances in Research and Application: 2013 Edition by :

Download or read book Oxygen Compounds—Advances in Research and Application: 2013 Edition written by and published by ScholarlyEditions. This book was released on 2013-05-01 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxygen Compounds—Advances in Research and Application: 2013 Edition is a ScholarlyBrief™ that delivers timely, authoritative, comprehensive, and specialized information about ZZZAdditional Research in a concise format. The editors have built Oxygen Compounds—Advances in Research and Application: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about ZZZAdditional Research in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Oxygen Compounds—Advances in Research and Application: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Nanoscale Silicon Devices

Author : Shunri Oda
Publisher : CRC Press
ISBN 13 : 1482228688
Total Pages : 288 pages
Book Rating : 4.4/5 (822 download)

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Book Synopsis Nanoscale Silicon Devices by : Shunri Oda

Download or read book Nanoscale Silicon Devices written by Shunri Oda and published by CRC Press. This book was released on 2018-09-03 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.

21st Century Nanoscience – A Handbook

Author : Klaus D. Sattler
Publisher : CRC Press
ISBN 13 : 1000702502
Total Pages : 465 pages
Book Rating : 4.0/5 (7 download)

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Book Synopsis 21st Century Nanoscience – A Handbook by : Klaus D. Sattler

Download or read book 21st Century Nanoscience – A Handbook written by Klaus D. Sattler and published by CRC Press. This book was released on 2020-11-26 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: 21st Century Nanoscience - A Handbook: Nanophotonics, Nanoelectronics, and Nanoplasmonics (Volume 6) will be the most comprehensive, up-to-date large reference work for the field of nanoscience. Handbook of Nanophysics by the same editor published in the fall of 2010 and was embraced as the first comprehensive reference to consider both fundamental and applied aspects of nanophysics. This follow-up project has been conceived as a necessary expansion and full update that considers the significant advances made in the field since 2010. It goes well beyond the physics as warranted by recent developments in the field. This sixth volume in a ten-volume set covers nanophotonics, nanoelectronics, and nanoplasmonics. Key Features: Provides the most comprehensive, up-to-date large reference work for the field. Chapters written by international experts in the field. Emphasises presentation and real results and applications. This handbook distinguishes itself from other works by its breadth of coverage, readability and timely topics. The intended readership is very broad, from students and instructors to engineers, physicists, chemists, biologists, biomedical researchers, industry professionals, governmental scientists, and others whose work is impacted by nanotechnology. It will be an indispensable resource in academic, government, and industry libraries worldwide. The fields impacted by nanophysics extend from materials science and engineering to biotechnology, biomedical engineering, medicine, electrical engineering, pharmaceutical science, computer technology, aerospace engineering, mechanical engineering, food science, and beyond.

Nanoscale Semiconductor Memories

Author : Santosh K. Kurinec
Publisher : CRC Press
ISBN 13 : 1351832085
Total Pages : 450 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Nanoscale Semiconductor Memories by : Santosh K. Kurinec

Download or read book Nanoscale Semiconductor Memories written by Santosh K. Kurinec and published by CRC Press. This book was released on 2017-07-28 with total page 450 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.

Physics and Technology of High-k Materials 8

Author : Samares Kar
Publisher : The Electrochemical Society
ISBN 13 : 1566778220
Total Pages : 621 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis Physics and Technology of High-k Materials 8 by : Samares Kar

Download or read book Physics and Technology of High-k Materials 8 written by Samares Kar and published by The Electrochemical Society. This book was released on 2010-10 with total page 621 pages. Available in PDF, EPUB and Kindle. Book excerpt: The issue of ECS Transactions will cover comprehensively all the aspects of high-k material physics and technology: Diverse High Mobility Substrates, High-k Materials, Metal Gate Electrode Materials, Deposition Techniques, Bulk Material Properties, Flat-Band Voltage Issues and Control, Interfaces, Gate Stack Reliability, Electrical, Chemical, and Physical Chatracterization, Novel Applications, High-k and Diverse Insulators for Photonics, High-k Processing/ Manufacturing.

Noise in Nanoscale Semiconductor Devices

Author : Tibor Grasser
Publisher : Springer Nature
ISBN 13 : 3030375005
Total Pages : 724 pages
Book Rating : 4.0/5 (33 download)

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Book Synopsis Noise in Nanoscale Semiconductor Devices by : Tibor Grasser

Download or read book Noise in Nanoscale Semiconductor Devices written by Tibor Grasser and published by Springer Nature. This book was released on 2020-04-26 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.

High-k Gate Dielectrics for CMOS Technology

Author : Gang He
Publisher : John Wiley & Sons
ISBN 13 : 3527646361
Total Pages : 560 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis High-k Gate Dielectrics for CMOS Technology by : Gang He

Download or read book High-k Gate Dielectrics for CMOS Technology written by Gang He and published by John Wiley & Sons. This book was released on 2012-08-10 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

Encyclopedia of Plasma Technology - Two Volume Set

Author : J. Leon Shohet
Publisher : CRC Press
ISBN 13 : 1351204939
Total Pages : 2883 pages
Book Rating : 4.3/5 (512 download)

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Book Synopsis Encyclopedia of Plasma Technology - Two Volume Set by : J. Leon Shohet

Download or read book Encyclopedia of Plasma Technology - Two Volume Set written by J. Leon Shohet and published by CRC Press. This book was released on 2016-12-12 with total page 2883 pages. Available in PDF, EPUB and Kindle. Book excerpt: Technical plasmas have a wide range of industrial applications. The Encyclopedia of Plasma Technology covers all aspects of plasma technology from the fundamentals to a range of applications across a large number of industries and disciplines. Topics covered include nanotechnology, solar cell technology, biomedical and clinical applications, electronic materials, sustainability, and clean technologies. The book bridges materials science, industrial chemistry, physics, and engineering, making it a must have for researchers in industry and academia, as well as those working on application-oriented plasma technologies. Also Available Online This Taylor & Francis encyclopedia is also available through online subscription, offering a variety of extra benefits for researchers, students, and librarians, including: Citation tracking and alerts Active reference linking Saved searches and marked lists HTML and PDF format options Contact Taylor and Francis for more information or to inquire about subscription options and print/online combination packages. US: (Tel) 1.888.318.2367; (E-mail) [email protected] International: (Tel) +44 (0) 20 7017 6062; (E-mail) [email protected]

Fundamentals of III-V Semiconductor MOSFETs

Author : Serge Oktyabrsky
Publisher : Springer Science & Business Media
ISBN 13 : 1441915478
Total Pages : 451 pages
Book Rating : 4.4/5 (419 download)

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Book Synopsis Fundamentals of III-V Semiconductor MOSFETs by : Serge Oktyabrsky

Download or read book Fundamentals of III-V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

Author : Guilei Wang
Publisher : Springer Nature
ISBN 13 : 9811500460
Total Pages : 127 pages
Book Rating : 4.8/5 (115 download)

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Book Synopsis Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond by : Guilei Wang

Download or read book Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond written by Guilei Wang and published by Springer Nature. This book was released on 2019-09-20 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.

Advanced Flip Chip Packaging

Author : Ho-Ming Tong
Publisher : Springer Science & Business Media
ISBN 13 : 1441957685
Total Pages : 562 pages
Book Rating : 4.4/5 (419 download)

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Book Synopsis Advanced Flip Chip Packaging by : Ho-Ming Tong

Download or read book Advanced Flip Chip Packaging written by Ho-Ming Tong and published by Springer Science & Business Media. This book was released on 2013-03-20 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Flip Chip Packaging presents past, present and future advances and trends in areas such as substrate technology, material development, and assembly processes. Flip chip packaging is now in widespread use in computing, communications, consumer and automotive electronics, and the demand for flip chip technology is continuing to grow in order to meet the need for products that offer better performance, are smaller, and are environmentally sustainable.

China Semiconductor Technology International Conference 2010 (CSTIC 2010)

Author : Han-Ming Wu
Publisher : The Electrochemical Society
ISBN 13 : 1566778069
Total Pages : 1203 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis China Semiconductor Technology International Conference 2010 (CSTIC 2010) by : Han-Ming Wu

Download or read book China Semiconductor Technology International Conference 2010 (CSTIC 2010) written by Han-Ming Wu and published by The Electrochemical Society. This book was released on 2010-03 with total page 1203 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our mission is to provide a forum for world experts to discuss technologies, address the growing needs associated with silicon technology, and exchange their discoveries and solutions for current issues of high interest. We encourage collaboration, open discussion, and critical reviews at this conference. Furthermore, we hope that this conference will also provide collaborative opportunities for those who are interested in the semiconductor industry in Asia, particularly in China.

Fundamentals of Bias Temperature Instability in MOS Transistors

Author : Souvik Mahapatra
Publisher : Springer
ISBN 13 : 8132225082
Total Pages : 282 pages
Book Rating : 4.1/5 (322 download)

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Book Synopsis Fundamentals of Bias Temperature Instability in MOS Transistors by : Souvik Mahapatra

Download or read book Fundamentals of Bias Temperature Instability in MOS Transistors written by Souvik Mahapatra and published by Springer. This book was released on 2015-08-05 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.

Toward Quantum FinFET

Author : Weihua Han
Publisher : Springer Science & Business Media
ISBN 13 : 3319020218
Total Pages : 369 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Toward Quantum FinFET by : Weihua Han

Download or read book Toward Quantum FinFET written by Weihua Han and published by Springer Science & Business Media. This book was released on 2013-11-23 with total page 369 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect Provides the keys to understanding the emerging area of the quantum FinFET Written by leading experts in each research area Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices