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Author :
Publisher :
ISBN 13 :
Total Pages : 106 pages
Book Rating : 4.:/5 (78 download)
Download or read book Study on SiGe Power HBT Design and High-frequency Substrate Noise Isolation in BiCMOS Technology written by and published by . This book was released on 2008 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ramkumar Krithivasan
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (15 download)
Download or read book Design of High-speed SiGe HBT BiCMOS Circuits for Extreme Environment Applications written by Ramkumar Krithivasan and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this work is to investigate the suitability of applying silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) bipolar complementary metal oxide semiconductor (BiCMOS) technology to extreme environments and to design high-speed circuits in this technology to demonstrate their reliable operation under these conditions. This research focuses on exploring techniques for hardening SiGe HBT digital logic for single event upset (SEU) based on principles of radiation hardening by design (RHBD) as well as on the cryogenic characterization of SiGe HBTs and designing broadband amplifiers for operation at cryogenic temperatures. Representative circuits ranging from shift registers featuring multiple architectures to broadband analog circuits have been implemented in various generations of this technology to enable this effort.
Author : Niccolò Rinaldi
Publisher : River Publishers
ISBN 13 : 8793519613
Total Pages : 378 pages
Book Rating : 4.7/5 (935 download)
Download or read book Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications written by Niccolò Rinaldi and published by River Publishers. This book was released on 2018-03-15 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Author : Curtis M. Grens
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (618 download)
Download or read book A Comprehensive Study of Safe-operating-area, Biasing Constraints, and Breakdown in Advanced SiGe HBTs written by Curtis M. Grens and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents a comprehensive assessment of breakdown and operational voltage constraints in state-of-the-art silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. Technology scaling of SiGe HBTs for high frequency performance results on lower breakdown voltages, making operating voltage constraints an increasingly vital reliability consideration in SiGe HBTs from both a device and circuits perspective.
Author : Wael Hamdi Hemdan
Publisher :
ISBN 13 :
Total Pages : 234 pages
Book Rating : 4.:/5 (318 download)
Download or read book Active Substrate Noise Suppression Circuit in Advanced 0.18 Micrometer SiGe BiCMOS Technology for High Performance RF/mixed-signal SOC Applications written by Wael Hamdi Hemdan and published by . This book was released on 2006 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : David Louis Harame
Publisher : The Electrochemical Society
ISBN 13 : 1566775078
Total Pages : 1280 pages
Book Rating : 4.5/5 (667 download)
Download or read book SiGe and Ge written by David Louis Harame and published by The Electrochemical Society. This book was released on 2006 with total page 1280 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.
Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1351834762
Total Pages : 189 pages
Book Rating : 4.3/5 (518 download)
Download or read book Measurement and Modeling of Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 189 pages. Available in PDF, EPUB and Kindle. Book excerpt: When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.
Author :
Publisher :
ISBN 13 :
Total Pages : 768 pages
Book Rating : 4.3/5 (91 download)
Download or read book IBM Journal of Research and Development written by and published by . This book was released on 2003 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Peter Ashburn
Publisher : John Wiley & Sons
ISBN 13 : 0470090731
Total Pages : 286 pages
Book Rating : 4.4/5 (7 download)
Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Author : Gennady Gildenblat
Publisher : Springer Science & Business Media
ISBN 13 : 9048186145
Total Pages : 531 pages
Book Rating : 4.0/5 (481 download)
Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Author : Timothy Osborne Dickson
Publisher :
ISBN 13 : 9780494279403
Total Pages : 398 pages
Book Rating : 4.2/5 (794 download)
Download or read book Low-voltage and Low-power Silicon Germanium BiCMOS Topologies for 80-100 Gigabit-per-second Serial Communication written by Timothy Osborne Dickson and published by . This book was released on 2007 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt: The new concepts presented in this thesis enable the design of highly-integrated broadband circuits in a 130-nm SiGe BiCMOS technology with 150-GHz fT SiGe HBT. The first single-chip pseudo-random binary sequence generator with a pattern length of 231 - 1 is reported and achieves a maximum output data rate of 80 Gb/s. Additionally, the first 86-Gb/s serial transmitter is presented, which operates from a 2.5-V supply voltage and consumes less power (1.36 W) than any 40-Gb/s serial transmitter reported to date. This thesis focuses on new design challenges which arise in the design of next-generation wireline circuits operating at data rates of 80--100 Gb/s. Methodologies for low-power high-speed logic are described. A new low-voltage BiCMOS current-mode logic family is introduced, which allows for more than a 20% reduction in power consumption in high-speed building blocks. This logic family, based on a MOS-HBT cascode topology with common-source nMOS and common-base SiGe HBT, takes full advantage of the best features of both devices to achieve low-voltage, high-speed operation. Algorithmic design methodologies for MOS and BiCMOS high-speed logic circuits are presented based on the invariance of characteristic current densities in nanoscale MOSFETs, resulting in robust designs which can be ported between foundries and even across technology nodes. Further reduction in building block power consumption can be achieved by trading of bias current for inductive peaking. For the first time, monolithic spiral inductors and transformers are demonstrated for use at mm-wave frequencies. Broadband inductor models along with a model extraction methodology based on measured or simulated y-parameters is described for the first time. Low-noise broadband input stages are compared theoretically and experimentally to determine the best topology to improve sensitivity in Ethernet or backplane receivers. It is proven that the transimpedance input stage yields the best noise performance, highest bandwidth, best input matching, and lowest power consumption than more conventional emitter-follower-inverter or Cherry-Hooper input stages, making it an ideal topology for use in broadband receivers.
Author : Mladen Božanić
Publisher : Springer Nature
ISBN 13 : 3030443981
Total Pages : 259 pages
Book Rating : 4.0/5 (34 download)
Download or read book Millimeter-Wave Integrated Circuits written by Mladen Božanić and published by Springer Nature. This book was released on 2020-03-16 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: This peer-reviewed book explores the methodologies that are used for effective research, design and innovation in the vast field of millimeter-wave circuits, and describes how these have to be modified to fit the uniqueness of high-frequency nanoelectronics design. Each chapter focuses on a specific research challenge related to either small form factors or higher operating frequencies. The book first examines nanodevice scaling and the emerging electronic design automation tools that can be used in millimeter-wave research, as well as the singular challenges of combining deep-submicron and millimeter-wave design. It also demonstrates the importance of considering, in the millimeter-wave context, system-level design leading to differing packaging options. Further, it presents integrated circuit design methodologies for all major transceiver blocks typically employed at millimeter-wave frequencies, as these methodologies are normally fundamentally different from the traditional design methodologies used in analogue and lower-frequency electronics. Lastly, the book discusses the methodologies of millimeter-wave research and design for extreme or harsh environments, rebooting electronics, the additional opportunities for terahertz research, and the main differences between the approaches taken in millimeter-wave research and terahertz research.
Download or read book SiGe Power HBT Design Considerations for IEEE 802.11 Applications written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe power HBTs integrated in SiGe BiCMOS are developed and characterized at 2.4 GHz for 802.11b and 5.8 GHz for 802.11a wireless LAN applications. Design considerations of ballast resistors for SiGe power HBTs at these two frequencies are investigated for both good thermal stability and high RF power performance. The investigations show that emitter ballast resistors or base ballast resistors should be judiciously used for SiGe power HBTs operating at different frequencies in order to extract the best RF performance from these devices. An RF output power of 30.8 dBm with PAE of 50.2 % at 2.4 GHz and an output power of 27.3 dBm with PAE of 23.6 % at 5.8 GHz are achieved from single discrete SiGe power HBTs with 0.4μm emitter width, respectively. These highest performance results demonstrate the great power amplification potential of SiGe HBTs for 802.11 wireless LAN applications.
Author : Massimo Rudan
Publisher : Springer Nature
ISBN 13 : 3030798275
Total Pages : 1680 pages
Book Rating : 4.0/5 (37 download)
Download or read book Springer Handbook of Semiconductor Devices written by Massimo Rudan and published by Springer Nature. This book was released on 2022-11-10 with total page 1680 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Author : Jianjun Gao
Publisher : John Wiley & Sons
ISBN 13 : 1118921550
Total Pages : 394 pages
Book Rating : 4.1/5 (189 download)
Download or read book Heterojunction Bipolar Transistors for Circuit Design written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2015-04-27 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Author :
Publisher :
ISBN 13 :
Total Pages : 370 pages
Book Rating : 4.3/5 (91 download)
Download or read book EDMO ... written by and published by . This book was released on 2001 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 296 pages
Book Rating : 4.:/5 (318 download)
Download or read book ICMTS 2002 written by and published by . This book was released on 2002 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
