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Study Of Inversion And Junctionless Nanosheet Channel On Multi Gate Field Effect Transistors And Non Volatile Memory Devices
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Book Synopsis Study of Inversion and Junctionless Nanosheet Channel on Multi-gate Field Effect Transistors and Non-Volatile Memory Devices by : Yu-Ru Lin
Download or read book Study of Inversion and Junctionless Nanosheet Channel on Multi-gate Field Effect Transistors and Non-Volatile Memory Devices written by Yu-Ru Lin and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors by : Farzan Jazaeri
Download or read book Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors written by Farzan Jazaeri and published by Cambridge University Press. This book was released on 2018-03-01 with total page 255 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.
Book Synopsis Study of Vertically Stacked Nanosheet With Multi- Gate Field-Effect-Transistors by : Yi-Yun Yang
Download or read book Study of Vertically Stacked Nanosheet With Multi- Gate Field-Effect-Transistors written by Yi-Yun Yang and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fundamentals of Nanoscaled Field Effect Transistors by : Amit Chaudhry
Download or read book Fundamentals of Nanoscaled Field Effect Transistors written by Amit Chaudhry and published by Springer Science & Business Media. This book was released on 2013-04-23 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Book Synopsis Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors by : Evelyn Tina Breyer
Download or read book Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors written by Evelyn Tina Breyer and published by BoD – Books on Demand. This book was released on 2022-02-08 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).
Book Synopsis Study of Novel Nano-Scale Multi-Gate Junctionless Field Effect Transistors by :
Download or read book Study of Novel Nano-Scale Multi-Gate Junctionless Field Effect Transistors written by and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nanowire Field Effect Transistors: Principles and Applications by : Dae Mann Kim
Download or read book Nanowire Field Effect Transistors: Principles and Applications written by Dae Mann Kim and published by Springer Science & Business Media. This book was released on 2013-10-23 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Book Synopsis Novel Three-state Quantum Dot Gate Field Effect Transistor by : Supriya Karmakar
Download or read book Novel Three-state Quantum Dot Gate Field Effect Transistor written by Supriya Karmakar and published by Springer Science & Business Media. This book was released on 2013-11-20 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.
Book Synopsis Study of Multi-Stacking Hybrid P/N/O/P Nanosheet Layers Junctionless Field-Effect Transistors by : Yi-Fan Chen
Download or read book Study of Multi-Stacking Hybrid P/N/O/P Nanosheet Layers Junctionless Field-Effect Transistors written by Yi-Fan Chen and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gate-All-Around Nano-wire Channel Transistors and Nonvolatile Memory Devices by :
Download or read book Gate-All-Around Nano-wire Channel Transistors and Nonvolatile Memory Devices written by and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Study of Inversion Mode and Junctionless Twin Thin-Film-Transistor Nonvolatile Memory by : 劉冠呈
Download or read book Study of Inversion Mode and Junctionless Twin Thin-Film-Transistor Nonvolatile Memory written by 劉冠呈 and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physics, Device Operation, and Circuit Application of Multi-gate Junctionless Metal-oxide-semiconductor Field-effect-transistors by : Chun-Yen Chang
Download or read book Physics, Device Operation, and Circuit Application of Multi-gate Junctionless Metal-oxide-semiconductor Field-effect-transistors written by Chun-Yen Chang and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Negative Capacitance Field Effect Transistors by : Young Suh Song
Download or read book Negative Capacitance Field Effect Transistors written by Young Suh Song and published by CRC Press. This book was released on 2023-10-31 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.
Book Synopsis Tunneling Field Effect Transistors by : T. S. Arun Samuel
Download or read book Tunneling Field Effect Transistors written by T. S. Arun Samuel and published by CRC Press. This book was released on 2023-06-08 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book will give insight into emerging semiconductor devices from their applications in electronic circuits, which form the backbone of electronic equipment. It provides desired exposure to the ever-growing field of low-power electronic devices and their applications in nanoscale devices, memory design, and biosensing applications. Tunneling Field Effect Transistors: Design, Modeling and Applications brings researchers and engineers from various disciplines of the VLSI domain to together tackle the emerging challenges in the field of nanoelectronics and applications of advanced low-power devices. The book begins by discussing the challenges of conventional CMOS technology from the perspective of low-power applications, and it also reviews the basic science and developments of subthreshold swing technology and recent advancements in the field. The authors discuss the impact of semiconductor materials and architecture designs on TFET devices and the performance and usage of FET devices in various domains such as nanoelectronics, Memory Devices, and biosensing applications. They also cover a variety of FET devices, such as MOSFETs and TFETs, with various structures based on the tunneling transport phenomenon. The contents of the book have been designed and arranged in such a way that Electrical Engineering students, researchers in the field of nanodevices and device-circuit codesign, as well as industry professionals working in the domain of semiconductor devices, will find the material useful and easy to follow.
Book Synopsis Studies of Field-effect Transistors Having Non-equipotenial Gates by : James Edwards Schroeder
Download or read book Studies of Field-effect Transistors Having Non-equipotenial Gates written by James Edwards Schroeder and published by . This book was released on 1974 with total page 502 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nanoscale Effects in Junctionless Field Effect Transistors by : Abdussamad Ahmed Muntahi
Download or read book Nanoscale Effects in Junctionless Field Effect Transistors written by Abdussamad Ahmed Muntahi and published by . This book was released on 2018 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: Though the concept of junctionless field effect transistor (JLFET) is old, it was not possible to fabricate a useful JLFET device, as it requires a very shallow channel region. Very recently, the emergence of new and advanced technologies has made it possible to create viable JLFET devices using nanowires. This work aims to computationally investigate the interplay of quantum size-quantization and random dopant fluctuations (RDF) effects in nanoscale JLFETs. For this purpose, a 3-D fully atomistic quantum-corrected Monte Carlo device simulator has been integrated and used in this work. The size-quantization effect has been accounted for via a parameter-free effective potential scheme and benchmarked against the NEGF approach in the ballistic limit. To study the RDF effects and treat full Coulomb (electron-ion and electron-electron) interactions in the real-space and beyond the Poisson picture, the simulator implements a corrected-Coulomb electron dynamics (QC-ED) approach. The essential bandstructure and scattering parameters (energy bandgap, effective masses, and the density-of-states) have been computed using an atomistic 20-band nearest-neighbour sp 3d5s* tight-binding scheme. First, an experimental device was simulated to evaluate the validity of the simulator. Because of the small dimension, quantum mechanical confinement was found to be the dominant mechanism that significantly degrades the current drive capability of nanoscale JLFETs. Surface roughness scattering is not as prominent as observed in conventional MOSFETs. Also, because of its small size, the performance of the device is prone to the effect of variability, for which a discrete doping model was proved essential. Finally, a new JLFET was designed and optimized in this work. The proposed device is based on a gate-all-around silicon nanowire. Source/drain length is 32.5 nm and channel length is 14 nm. Gate contact length is 9 nm. The EOT (equivalent oxide thickness) is 1 nm. It has a metal gate with a workfunction of 4.55 eV. The source, channel and drain regions are n-type with a doping density of 1.5×1019 cm-3. Detailed simulation shows that the two most influential mechanisms that degrade the drive capability are quantum mechanical confinement and Coulomb scattering. Surface roughness scattering is found to be very weak. In addition, thinner nanowire is more prone to Coulomb scattering exhibiting a reduced ON-current (ION). Simulation results show that silicon nanowires with a side length (width and depth) of 3 nm and a doping density of 1.5×1019 cm-3 produce satisfactory drive current.
Book Synopsis Fundamentals Of Nanotransistors by : Mark S Lundstrom
Download or read book Fundamentals Of Nanotransistors written by Mark S Lundstrom and published by World Scientific Publishing Company. This book was released on 2017-07-11 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.
