Strained Layer Epitaxy Volume 379

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Strained Layer Epitaxy: Volume 379

Author : Eugene Fitzgerald
Publisher :
ISBN 13 :
Total Pages : 552 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Strained Layer Epitaxy: Volume 379 by : Eugene Fitzgerald

Download or read book Strained Layer Epitaxy: Volume 379 written by Eugene Fitzgerald and published by . This book was released on 1995-11-09 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: An interdisciplinary discussion of key materials issues and controversies in strained layer epitaxy is presented in this new volume from MRS. Research involving GeSi alloys and Si:C alloys are well represented. In the case of GeSi alloys, utilizing both strained and relaxed structures appears to be a strong component of the current research. Applications, devices and synthesis of improved relaxed and strained materials are featured. Special efforts to integrate the III-V and IV communities were also made during this symposium, and those efforts are reflected in the proceedings volume as well. Results on compositional graded layers in both the GeSi and III-V materials systems are presented. Topics include: general issues; ordering/low dimensional structures; characterization; device applications; growth of Si-based materials; and growth of compound semiconductors.

Handbook of Solid State Diffusion: Volume 1

Author : Aloke Paul
Publisher : Elsevier
ISBN 13 : 0128043601
Total Pages : 550 pages
Book Rating : 4.1/5 (28 download)

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Book Synopsis Handbook of Solid State Diffusion: Volume 1 by : Aloke Paul

Download or read book Handbook of Solid State Diffusion: Volume 1 written by Aloke Paul and published by Elsevier. This book was released on 2017-04-11 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: Handbook of Solid State Diffusion, Volume 1: Diffusion Fundamentals and Techniques covers the basic fundamentals, techniques, applications, and latest developments in the area of solid-state diffusion, offering a pedagogical understanding for students, academicians, and development engineers. Both experimental techniques and computational methods find equal importance in the first of this two-volume set. Volume 1 covers the fundamentals and techniques of solid-state diffusion, beginning with a comprehensive discussion of defects, then different analyzing methods, and finally concluding with an exploration of the different types of modeling techniques. Presents a handbook with a short mathematical background and detailed examples of concrete applications of the sophisticated methods of analysis Enables readers to learn the basic concepts of experimental approaches and the computational methods involved in solid-state diffusion Covers bulk, thin film, and nanomaterials Introduces the problems and analysis in important materials systems in various applications Collates contributions from academic and industrial problems from leading scientists involved in developing key concepts across the globe

Strained Silicon Heterostructures

Author : C. K. Maiti
Publisher : IET
ISBN 13 : 9780852967782
Total Pages : 520 pages
Book Rating : 4.9/5 (677 download)

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Book Synopsis Strained Silicon Heterostructures by : C. K. Maiti

Download or read book Strained Silicon Heterostructures written by C. K. Maiti and published by IET. This book was released on 2001 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.

Silicon Epitaxy

Author :
Publisher : Elsevier
ISBN 13 : 0080541003
Total Pages : 514 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Silicon Epitaxy by :

Download or read book Silicon Epitaxy written by and published by Elsevier. This book was released on 2001-09-26 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

Selected Works of Professor Herbert Kroemer

Author : Herbert Kroemer
Publisher : World Scientific
ISBN 13 : 9812709010
Total Pages : 385 pages
Book Rating : 4.8/5 (127 download)

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Book Synopsis Selected Works of Professor Herbert Kroemer by : Herbert Kroemer

Download or read book Selected Works of Professor Herbert Kroemer written by Herbert Kroemer and published by World Scientific. This book was released on 2008 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Information technology has changed our society radically. Just as the integrated circuits have been the prime mover for electronics, high-speed transistors and semiconductor lasers based on heterostructures are now playing the same role in modern telecommunications. Professor Kroemer's conceptual work on heterostructures began in the early 1950s as he was looking for a way to improve transistor speed and performance. In the 1960s, he applied the same principles to the development of lasers and light-emitting diodes, showing that they could achieve continuous operation at room temperature ? something thought impossible at that time. His deep fundamental scientific work has had a profound effect on technology and society, transforming and improving our lives.This reprint collection brings together Professor Kroemer's most important papers, presenting a comprehensive perspective of the field. It covers topics ranging from substrate materials, electronic properties, process technology, and devices, to circuits and applications. This reprint collection will help the reader identify the key stages in the development of heterostructure devices and lasers from early research through to its integration in current manufacturing. Devoted to R&D engineers and scientists who are actively involved in extending the nano- and microelectronics roadmap mainly via heterostructure engineering, this volume may also serve as a reference for postgraduate and research students.

X-Ray and Neutron Dynamical Diffraction

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Author : André Authier
Publisher : Springer Science & Business Media
ISBN 13 : 1461558794
Total Pages : 419 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis X-Ray and Neutron Dynamical Diffraction by : André Authier

Download or read book X-Ray and Neutron Dynamical Diffraction written by André Authier and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 419 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume collects the proceedings of the 23rd International Course of Crystallography, entitled "X-ray and Neutron Dynamical Diffraction, Theory and Applications," which took place in the fascinating setting of Erice in Sicily, Italy. It was run as a NATO Advanced Studies Institute with A. Authier (France) and S. Lagomarsino (Italy) as codirectors, and L. Riva di Sanseverino and P. Spadon (Italy) as local organizers, R. Colella (USA) and B. K. Tanner (UK) being the two other members of the organizing committee. It was attended by about one hundred participants from twenty four different countries. Two basic theories may be used to describe the diffraction of radiation by crystalline matter. The first one, the so-called geometrical, or kinematical theory, is approximate and is applicable to small, highly imperfect crystals. It is used for the determination of crystal structures and describes the diffraction of powders and polycrystalline materials. The other one, the so-called dynamical theory, is applicable to perfect or nearly perfect crystals. For that reason, dynamical diffraction of X-rays and neutrons constitutes the theoretical basis of a great variety of applications such as: • the techniques used for the characterization of nearly perfect high technology materials, semiconductors, piezoelectric, electrooptic, ferroelectric, magnetic crystals, • the X-ray optical devices used in all modem applications of Synchrotron Radiation (EXAFS, High Resolution X-ray Diffractometry, magnetic and nuclear resonant scattering, topography, etc. ), and • X-ray and neutron interferometry.

Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

Author : Peter Pichler
Publisher : Springer Science & Business Media
ISBN 13 : 9783211206874
Total Pages : 594 pages
Book Rating : 4.2/5 (68 download)

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Book Synopsis Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by : Peter Pichler

Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2004-06-02 with total page 594 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Epitaxial Oxide Thin Films II: Volume 401

Author : James S. Speck
Publisher :
ISBN 13 :
Total Pages : 588 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Epitaxial Oxide Thin Films II: Volume 401 by : James S. Speck

Download or read book Epitaxial Oxide Thin Films II: Volume 401 written by James S. Speck and published by . This book was released on 1996-03-29 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our understanding and control of epitaxial oxide heterostructures has progressed along multiple frontiers including magnetic, dielectric, ferroelectric, and superconducting oxide materials. This has resulted in both independent rediscovery and the successful borrowing of ideas from ceramic science, solid-state physics, and semiconductor epitaxy. A new field of materials science has emerged which aims at the use of the intrinsic properties of various oxide materials in single-crystal thin-film form. Exploiting the potential of these materials, however, will only be possible if many fundamental and engineering questions can be answered. This book represents continued progress toward fulfilling that promise. Technical information on epitaxial oxide thin films from industry, academia and government laboratories is presented. Topics include: dielectrics; ferroelectrics; optics; superconductors; magnetics; magnetoresistance.

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1351834797
Total Pages : 373 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices by : John D. Cressler

Download or read book SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 373 pages. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Nanomaterials

Author : Engg Kamakhya Prasad Ghatak
Publisher : Walter de Gruyter GmbH & Co KG
ISBN 13 : 3110609355
Total Pages : 432 pages
Book Rating : 4.1/5 (16 download)

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Book Synopsis Nanomaterials by : Engg Kamakhya Prasad Ghatak

Download or read book Nanomaterials written by Engg Kamakhya Prasad Ghatak and published by Walter de Gruyter GmbH & Co KG. This book was released on 2018-11-05 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work studies under different physical conditions the carrier contribution to elastic constants in heavily doped optoelectronic materials. In the presence of intense photon field the authors apply the Heisenberg Uncertainty Principle to formulate electron statistics. Many open research problems are discussed and numerous potential applications as quantum sensors and quantum cascade lasers are presented.

Materials Reliability in Microelectronics V: Volume 391

Author : Anthony S. Oates
Publisher :
ISBN 13 :
Total Pages : 552 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Materials Reliability in Microelectronics V: Volume 391 by : Anthony S. Oates

Download or read book Materials Reliability in Microelectronics V: Volume 391 written by Anthony S. Oates and published by . This book was released on 1995-10-24 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: This long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured. Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.

Cumulative Subject and Author Index Including Tables of Contents, Volumes 1-50

Author :
Publisher : Academic Press
ISBN 13 : 0080864511
Total Pages : 445 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis Cumulative Subject and Author Index Including Tables of Contents, Volumes 1-50 by :

Download or read book Cumulative Subject and Author Index Including Tables of Contents, Volumes 1-50 written by and published by Academic Press. This book was released on 1998-09-15 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Optoelectronic Materials: Volume 417

Author : Eric D. Jones
Publisher :
ISBN 13 :
Total Pages : 450 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Optoelectronic Materials: Volume 417 by : Eric D. Jones

Download or read book Optoelectronic Materials: Volume 417 written by Eric D. Jones and published by . This book was released on 1996-07-02 with total page 450 pages. Available in PDF, EPUB and Kindle. Book excerpt: While the effects of spontaneous ordering or composition modulation on the properties of semiconductors and optoelectronic devices have been studied with great interest over the past several years, an understanding of the physics and chemistry of these two related phenomena is still in its infancy. This book brings together researchers from around the world to address issues concerning the physics, chemistry and growth parameters for spontaneous ordering and composition modulation. Developments in the use of artificial patterning to obtain new structured materials on a microscopic scale are featured. Advances in characterization techniques are also presented. Topics include: spontaneous ordering; self-assembled structures and quantum dots; self-organized epitaxial structures; composition modulation studies and optoelectronic materials.

Electronic Packaging Materials Science VIII: Volume 390

Author : Robert C. Sundahl
Publisher :
ISBN 13 :
Total Pages : 312 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Electronic Packaging Materials Science VIII: Volume 390 by : Robert C. Sundahl

Download or read book Electronic Packaging Materials Science VIII: Volume 390 written by Robert C. Sundahl and published by . This book was released on 1995-09-26 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: The dynamic nature of the microelectronics industry, in particular within the area of packaging, requires a continuous updating and revision of priorities. In an effort to communicate these priorities to researchers and engineers in the field, the National Technology Road Map was developed. This proceedings volume, the eighth in a series on electronic packaging, focuses on the materials research, development and processing issues identified in the road map. Topics include: an overview of the National Technology Road Map for Semiconductors; institutional and industrial perspectives; impact on materials needs and materials science issues; and research responses. Technical subtopics include polymers, ceramics, solder and composites.

Polymer/Inorganic Interfaces II: Volume 385

Author : Materials Research Society. Meeting
Publisher :
ISBN 13 :
Total Pages : 280 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Polymer/Inorganic Interfaces II: Volume 385 by : Materials Research Society. Meeting

Download or read book Polymer/Inorganic Interfaces II: Volume 385 written by Materials Research Society. Meeting and published by . This book was released on 1995 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polymer/inorganic interfaces play a fundamental role in a wide range of applications, yet understanding of the fundamental interactions between polymers and inorganic phases, and how they affect the strength and durability of the interface, is still in its infancy. This proceedings volume addresses various aspects of polymer/inorganic interfaces, including surface preparation and treatment, characterization and interface performance. In addition, applications where the interface and its properties play a significant role, such as in biointerfaces, microelectronics, polymer composites and interpenetrating polymer networks, are discussed. Contributions to the volume examine various inorganic material/polymer interfaces with an emphasis on composites, epoxy resins, polyurethanes, poly(methyl methacrylate), polysiloxanes and various hydrophilic polymers. These are arranged in seven units that identify major research efforts in specific fields. They include: experimental probes of interfaces; biointeractions and biointerfaces; adhesion and interface durability; interface characterization; primers for interface preparation; interfaces and composites and surface preparation.

Disordered Materials and Interfaces: Volume 407

Author : Herman Z. Cummins
Publisher :
ISBN 13 :
Total Pages : 450 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Disordered Materials and Interfaces: Volume 407 by : Herman Z. Cummins

Download or read book Disordered Materials and Interfaces: Volume 407 written by Herman Z. Cummins and published by . This book was released on 1996-03-26 with total page 450 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the fractal aspects of materials and disordered systems. Disorder plays a critical role in many naturally occurring and manufactured materials, both at the microscopic level (e.g., glasses) and the macroscopic level (e.g., foams, dendritic alloys, porous rock). The book addresses the dynamical processes involved in the formation and characterization of a wide range of disordered materials. Topics include: porous media; colloids; chemical reactions; dynamical aspects of the liquid-glass transition; disordered materials and surfaces and scaling and nanostructures.

Gallium Nitride and Related Materials: Volume 395

Author : F. A. Ponce
Publisher :
ISBN 13 :
Total Pages : 1008 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Gallium Nitride and Related Materials: Volume 395 by : F. A. Ponce

Download or read book Gallium Nitride and Related Materials: Volume 395 written by F. A. Ponce and published by . This book was released on 1996-09-04 with total page 1008 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.