Static Random Access Memory Circuits With 3d Stacked Nanosheet Devices

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Semiconductor Memory Devices and Circuits

Author : Shimeng Yu
Publisher : CRC Press
ISBN 13 : 1000567575
Total Pages : 214 pages
Book Rating : 4.0/5 (5 download)

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Book Synopsis Semiconductor Memory Devices and Circuits by : Shimeng Yu

Download or read book Semiconductor Memory Devices and Circuits written by Shimeng Yu and published by CRC Press. This book was released on 2022-04-19 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers semiconductor memory technologies from device bit-cell structures to memory array design with an emphasis on recent industry scaling trends and cutting-edge technologies. The first part of the book discusses the mainstream semiconductor memory technologies. The second part of the book discusses the emerging memory candidates that may have the potential to change the memory hierarchy, and surveys new applications of memory technologies for machine/deep learning applications. This book is intended for graduate students in electrical and computer engineering programs and researchers or industry professionals in semiconductors and microelectronics. Explains the design of basic memory bit-cells including 6-transistor SRAM, 1-transistor-1-capacitor DRAM, and floating gate/charge trap FLASH transistor Examines the design of the peripheral circuits including the sense amplifier and array-level organization for the memory array Examines industry trends of memory technologies such as FinFET based SRAM, High-Bandwidth-Memory (HBM), 3D NAND Flash, and 3D X-point array Discusses the prospects and challenges of emerging memory technologies such as PCM, RRAM, STT-MRAM/SOT-MRAM and FeRAM/FeFET Explores the new applications such as in-memory computing for AI hardware acceleration.

Design-for-Test and Test Optimization Techniques for TSV-based 3D Stacked ICs

Author : Brandon Noia
Publisher : Springer Science & Business Media
ISBN 13 : 3319023780
Total Pages : 260 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Design-for-Test and Test Optimization Techniques for TSV-based 3D Stacked ICs by : Brandon Noia

Download or read book Design-for-Test and Test Optimization Techniques for TSV-based 3D Stacked ICs written by Brandon Noia and published by Springer Science & Business Media. This book was released on 2013-11-19 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes innovative techniques to address the testing needs of 3D stacked integrated circuits (ICs) that utilize through-silicon-vias (TSVs) as vertical interconnects. The authors identify the key challenges facing 3D IC testing and present results that have emerged from cutting-edge research in this domain. Coverage includes topics ranging from die-level wrappers, self-test circuits, and TSV probing to test-architecture design, test scheduling, and optimization. Readers will benefit from an in-depth look at test-technology solutions that are needed to make 3D ICs a reality and commercially viable.

Principles of High-Performance Processor Design

Author : Junichiro Makino
Publisher : Springer Nature
ISBN 13 : 3030768716
Total Pages : 167 pages
Book Rating : 4.0/5 (37 download)

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Book Synopsis Principles of High-Performance Processor Design by : Junichiro Makino

Download or read book Principles of High-Performance Processor Design written by Junichiro Makino and published by Springer Nature. This book was released on 2021-08-20 with total page 167 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes how we can design and make efficient processors for high-performance computing, AI, and data science. Although there are many textbooks on the design of processors we do not have a widely accepted definition of the efficiency of a general-purpose computer architecture. Without a definition of the efficiency, it is difficult to make scientific approach to the processor design. In this book, a clear definition of efficiency is given and thus a scientific approach for processor design is made possible. In chapter 2, the history of the development of high-performance processor is overviewed, to discuss what quantity we can use to measure the efficiency of these processors. The proposed quantity is the ratio between the minimum possible energy consumption and the actual energy consumption for a given application using a given semiconductor technology. In chapter 3, whether or not this quantity can be used in practice is discussed, for many real-world applications. In chapter 4, general-purpose processors in the past and present are discussed from this viewpoint. In chapter 5, how we can actually design processors with near-optimal efficiencies is described, and in chapter 6 how we can program such processors. This book gives a new way to look at the field of the design of high-performance processors.

Junctionless Field-Effect Transistors

Author : Shubham Sahay
Publisher : John Wiley & Sons
ISBN 13 : 1119523532
Total Pages : 496 pages
Book Rating : 4.1/5 (195 download)

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Book Synopsis Junctionless Field-Effect Transistors by : Shubham Sahay

Download or read book Junctionless Field-Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-02-27 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.

FinFET Modeling for IC Simulation and Design

Author : Yogesh Singh Chauhan
Publisher : Academic Press
ISBN 13 : 0124200850
Total Pages : 305 pages
Book Rating : 4.1/5 (242 download)

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Book Synopsis FinFET Modeling for IC Simulation and Design by : Yogesh Singh Chauhan

Download or read book FinFET Modeling for IC Simulation and Design written by Yogesh Singh Chauhan and published by Academic Press. This book was released on 2015-03-17 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: - Why you should use FinFET - The physics and operation of FinFET - Details of the FinFET standard model (BSIM-CMG) - Parameter extraction in BSIM-CMG - FinFET circuit design and simulation - Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts' insight into the specifications of the standard - The first book on the industry-standard FinFET model - BSIM-CMG

Compact Modeling

Author : Gennady Gildenblat
Publisher : Springer Science & Business Media
ISBN 13 : 9048186145
Total Pages : 531 pages
Book Rating : 4.0/5 (481 download)

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Book Synopsis Compact Modeling by : Gennady Gildenblat

Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Evaluation of Novel Metalorganic Precursors for Atomic Layer Deposition of Nickel-based Thin Films

Author : Varun Sharma
Publisher : GRIN Verlag
ISBN 13 : 366811224X
Total Pages : 130 pages
Book Rating : 4.6/5 (681 download)

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Book Synopsis Evaluation of Novel Metalorganic Precursors for Atomic Layer Deposition of Nickel-based Thin Films by : Varun Sharma

Download or read book Evaluation of Novel Metalorganic Precursors for Atomic Layer Deposition of Nickel-based Thin Films written by Varun Sharma and published by GRIN Verlag. This book was released on 2015-12-21 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: Master's Thesis from the year 2015 in the subject Physics - Electrodynamics, grade: 1.0, Dresden Technical University (Faculty of Electrical and Computer Engineering/Institute of Semiconductors and Microsystems), course: Nanoelectronic Systems, language: English, abstract: Nickel and nickel(II) oxide are widely used in advanced electronic devices. In microelectronic industry, nickel is used to form nickel silicide. The nickel mono-silicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node CMOS technology. As compared to other silicides used for the contact applications, NiSi is preferred because of its low resistivity, low contact resistance, relatively low formation temperature and low silicon consumption. Nickel is used in nickel-based rechargeable batteries and ferromagnetic random access memories (RAMs). Nickel(II) oxide is utilized as transistor gate-oxide and oxide in resistive RAMs. Atomic Layer Deposition (ALD) is a special type of Chemical Vapor Deposition (CVD) technique, that is used to deposit very smooth as well as homogeneous thin films with excellent conformality even at high aspect ratios. In spite of huge number of practical applications of nickel and nickel(II) oxide, a few nickel precursors are available for thermal based ALD. Moreover, these precursors have resulted in poor film qualities and the process properties were also limited. Therefore in this master thesis, the properties of various novel nickel precursors had to be evaluated. All novel precursors are heteroleptic (different types of ligands) complexes and were specially designed by the manufacturer for thermal based ALD of pure nickel with hydrogen as a co-reactant. In order to evaluate the novel precursors, a new methodology was designed to test small amounts (down to 2 g) of precursors in a very time efficient way. This methodology includes: TGA/DTA curve analyses of the precursors, thermal stability tests in which the precursors (

Bias Temperature Instability for Devices and Circuits

Author : Tibor Grasser
Publisher : Springer Science & Business Media
ISBN 13 : 1461479096
Total Pages : 805 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Bias Temperature Instability for Devices and Circuits by : Tibor Grasser

Download or read book Bias Temperature Instability for Devices and Circuits written by Tibor Grasser and published by Springer Science & Business Media. This book was released on 2013-10-22 with total page 805 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.

High-k Materials in Multi-Gate FET Devices

Author : Shubham Tayal
Publisher : Science, Technology, and Management
ISBN 13 : 9780367639693
Total Pages : 0 pages
Book Rating : 4.6/5 (396 download)

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Book Synopsis High-k Materials in Multi-Gate FET Devices by : Shubham Tayal

Download or read book High-k Materials in Multi-Gate FET Devices written by Shubham Tayal and published by Science, Technology, and Management. This book was released on 2023-09-25 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies.

Robust SRAM Designs and Analysis

Author : Jawar Singh
Publisher : Springer Science & Business Media
ISBN 13 : 1461408180
Total Pages : 176 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Robust SRAM Designs and Analysis by : Jawar Singh

Download or read book Robust SRAM Designs and Analysis written by Jawar Singh and published by Springer Science & Business Media. This book was released on 2012-08-01 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design. Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis; Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices; Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.

Nanowire Field Effect Transistors: Principles and Applications

Author : Dae Mann Kim
Publisher : Springer Science & Business Media
ISBN 13 : 1461481244
Total Pages : 292 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Nanowire Field Effect Transistors: Principles and Applications by : Dae Mann Kim

Download or read book Nanowire Field Effect Transistors: Principles and Applications written by Dae Mann Kim and published by Springer Science & Business Media. This book was released on 2013-10-23 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

3D TCAD Simulation for CMOS Nanoeletronic Devices

Author : Yung-Chun Wu
Publisher : Springer
ISBN 13 : 9811030669
Total Pages : 337 pages
Book Rating : 4.8/5 (11 download)

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Book Synopsis 3D TCAD Simulation for CMOS Nanoeletronic Devices by : Yung-Chun Wu

Download or read book 3D TCAD Simulation for CMOS Nanoeletronic Devices written by Yung-Chun Wu and published by Springer. This book was released on 2017-06-19 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.

Carbon Nanotube Electronics

Author : Ali Javey
Publisher : Springer Science & Business Media
ISBN 13 : 0387692851
Total Pages : 275 pages
Book Rating : 4.3/5 (876 download)

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Book Synopsis Carbon Nanotube Electronics by : Ali Javey

Download or read book Carbon Nanotube Electronics written by Ali Javey and published by Springer Science & Business Media. This book was released on 2009-04-21 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a complete overview of the field of carbon nanotube electronics. It covers materials and physical properties, synthesis and fabrication processes, devices and circuits, modeling, and finally novel applications of nanotube-based electronics. The book introduces fundamental device physics and circuit concepts of 1-D electronics. At the same time it provides specific examples of the state-of-the-art nanotube devices.

MoS2

Author : Zhiming M. Wang
Publisher : Springer Science & Business Media
ISBN 13 : 3319028502
Total Pages : 296 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis MoS2 by : Zhiming M. Wang

Download or read book MoS2 written by Zhiming M. Wang and published by Springer Science & Business Media. This book was released on 2013-11-18 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the structure and electronic, magnetic, and other properties of various MoS2 (Molybdenum disulfide) nanostructures, with coverage of synthesis, Valley polarization, spin physics, and other topics. MoS2 is an important, graphene-like layered nano-material that substantially extends the range of possible nanostructures and devices for nanofabrication. These materials have been widely researched in recent years, and have become an attractive topic for applications such as catalytic materials and devices based on field-effect transistors (FETs) and semiconductors. Chapters from leading scientists worldwide create a bridge between MoS2 nanomaterials and fundamental physics in order to stimulate readers' interest in the potential of these novel materials for device applications. Since MoS2 nanostructures are expected to be increasingly important for future developments in energy and other electronic device applications, this book can be recommended for Physics and Materials Science and Engineering departments and as reference for researchers in the field.

Materials Nanoarchitectonics

Author : Katsuhiko Ariga
Publisher : Elsevier
ISBN 13 : 0323994733
Total Pages : 648 pages
Book Rating : 4.3/5 (239 download)

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Book Synopsis Materials Nanoarchitectonics by : Katsuhiko Ariga

Download or read book Materials Nanoarchitectonics written by Katsuhiko Ariga and published by Elsevier. This book was released on 2023-12-07 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials Nanoarchitectonics: From Integrated Molecular Systems to Advanced Devices provides the latest information on the design and molecular manipulation of self-organized hierarchically structured systems using tailor-made nanoscale materials as structural and functional units. The book is organized into three main sections that focus on molecular design of building blocks and hybrid materials, formation of nanostructures, and applications and devices. Bringing together emerging materials, synthetic aspects, nanostructure strategies, and applications, the book aims to support further progress, by offering different perspectives and a strong interdisciplinary approach to this rapidly growing area of innovation. This is an extremely valuable resource for researchers, advanced students, and scientists in industry, with an interest in nanoarchitectonics, nanostructures, and nanomaterials, or across the areas of nanotechnology, chemistry, surface science, polymer science, electrical engineering, physics, chemical engineering, and materials science. - Offers a nanoarchitectonic perspective on emerging fields, such as metal-organic frameworks, porous polymer materials, or biomimetic nanostructures - Discusses different approaches to utilizing "soft chemistry" as a source for hierarchically organized materials - Offers an interdisciplinary approach to the design and construction of integrated chemical nano systems - Discusses novel approaches towards the creation of complex multiscale architectures

NANO-CHIPS 2030

Author : Boris Murmann
Publisher : Springer Nature
ISBN 13 : 3030183386
Total Pages : 597 pages
Book Rating : 4.0/5 (31 download)

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Book Synopsis NANO-CHIPS 2030 by : Boris Murmann

Download or read book NANO-CHIPS 2030 written by Boris Murmann and published by Springer Nature. This book was released on 2020-06-08 with total page 597 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, a global team of experts from academia, research institutes and industry presents their vision on how new nano-chip architectures will enable the performance and energy efficiency needed for AI-driven advancements in autonomous mobility, healthcare, and man-machine cooperation. Recent reviews of the status quo, as presented in CHIPS 2020 (Springer), have prompted the need for an urgent reassessment of opportunities in nanoelectronic information technology. As such, this book explores the foundations of a new era in nanoelectronics that will drive progress in intelligent chip systems for energy-efficient information technology, on-chip deep learning for data analytics, and quantum computing. Given its scope, this book provides a timely compendium that hopes to inspire and shape the future of nanoelectronics in the decades to come.

Handbook of Memristor Networks

Author : Leon Chua
Publisher : Springer Nature
ISBN 13 : 331976375X
Total Pages : 1357 pages
Book Rating : 4.3/5 (197 download)

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Book Synopsis Handbook of Memristor Networks by : Leon Chua

Download or read book Handbook of Memristor Networks written by Leon Chua and published by Springer Nature. This book was released on 2019-11-12 with total page 1357 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Handbook presents all aspects of memristor networks in an easy to read and tutorial style. Including many colour illustrations, it covers the foundations of memristor theory and applications, the technology of memristive devices, revised models of the Hodgkin-Huxley Equations and ion channels, neuromorphic architectures, and analyses of the dynamic behaviour of memristive networks. It also shows how to realise computing devices, non-von Neumann architectures and provides future building blocks for deep learning hardware. With contributions from leaders in computer science, mathematics, electronics, physics, material science and engineering, the book offers an indispensable source of information and an inspiring reference text for future generations of computer scientists, mathematicians, physicists, material scientists and engineers working in this dynamic field.