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Spice Modeling And Simulation Of Silicon Carbide Power Modules
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Book Synopsis Spice Modeling and Simulation of Silicon-carbide Power Modules by : Blake Whitmore Nelson
Download or read book Spice Modeling and Simulation of Silicon-carbide Power Modules written by Blake Whitmore Nelson and published by . This book was released on 2017 with total page 103 pages. Available in PDF, EPUB and Kindle. Book excerpt: The design of power converters relies on computer modeling to accurately predict system electrical and thermal behavior prior to implementation. In the field of wide bandgap semiconductors, the extraordinarily high switching speed of silicon-carbide devices dictates that traditionally inconsequential parasitic elements can impact system level behavior. This is especially true for systems implementing multi-chip power modules. To ensure accurate simulations, a new and precise methodology for modeling these systems is needed. This thesis formulates a measurement based and empirically-validated methodology for modeling wide bandgap power modules. First, impedance analysis is used to create a parasitic model of the power module's frequency domain behavior. Second, double pulse testing is implemented to characterize the dynamic behavior of the power module. Next, a SPICE model is developed from the frequency and time domain measurements. Finally, the model is validated through its accurate prediction of time domain waveforms and switching losses.
Book Synopsis Characterization and Modeling of Sic Multi-Chip Power Modules by : Ryan Taylor
Download or read book Characterization and Modeling of Sic Multi-Chip Power Modules written by Ryan Taylor and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The accelerating commercialization of wide bandgap technology has led to increased demand for accurate circuit-level simulation models of devices such as Silicon-Carbide (SiC) MOSFET power modules. These models assist with optimizing systems to minimize overshoot and electromagnetic interference (EMI) associated with wide bandgap (WBG) switching conditions. As a result, capturing these behaviors requires more detailed and advanced modeling and characterization techniques than traditional Silicon (Si) semiconductors. These advancements include improvements to the parasitic package model, transistor characterization, and computational efficiency of the synthesized model. In this dissertation, a commercially available half-bridge SiC power module is characterized and modeled in SPICE. Simulation and empirical characterization techniques are used to quantify the packaging parasitics of the module. These parasitics include self-inductances, mutual coupling terms, and baseplate capacitances (BPC) that are sensitive to the high di/dt and dv/dt events that occur during switching transitions. The simulation predictions and empirical measurements are used to cross-validate each other and determine the preferred method for quantifying each parasitic parameter. The SiC transistors are characterized using a combination of commercial equipment and custom measurement techniques. The characterization process is described in detail and sensitivities are uncovered in that are crucial to the modeling effort. The characterization includes an advanced conduction analysis (ACA) system that combined with a self-heating removal algorithm is capable of quantifying the short-channel behavior of the device at high voltage. Finally, the package model and SiC MOSFET characteristics are used to synthesize a compact behavioral model. The model is evaluated in terms of its accuracy through comparison of quantitative error metrics across a wide range of double pulse test (DPT) operating conditions. The model is also evaluated in a multi-level inverter simulation to determine its computational efficiency and convergence behavior. It is shown that the model is highly accurate across the selected range of operating conditions and is capable of converging quickly in complex circuit topologies.
Book Synopsis Gallium Nitride and Silicon Carbide Power Technologies 4 by : K. Shenai
Download or read book Gallium Nitride and Silicon Carbide Power Technologies 4 written by K. Shenai and published by The Electrochemical Society. This book was released on with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modeling and Simulation of Silicon Carbide Power Semiconductor Devices by : Tracy Blake
Download or read book Modeling and Simulation of Silicon Carbide Power Semiconductor Devices written by Tracy Blake and published by . This book was released on 2005 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis SiC Power Module Design by : Alberto Castellazzi
Download or read book SiC Power Module Design written by Alberto Castellazzi and published by IET. This book was released on 2021-12-09 with total page 359 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap semiconductor devices offer higher efficiency, smaller size, less weight, and longer lifetime, with applications in power grid electronics and electromobility. This book describes the state of advanced packaging solutions for novel wide-band-gap semiconductors, specifically silicon carbide (SiC) MOSFETs and diodes.
Book Synopsis Design and Simulation of Power Electronics Modules by : Haonan Jia
Download or read book Design and Simulation of Power Electronics Modules written by Haonan Jia and published by . This book was released on 2020 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC), a wide-bandgap semiconductor material, greatly improves the performance of power semiconductor devices. Its electrical characteristics have a positive impact on the size, efficiency, and weight of the power electronics systems. Parasitic circuit elements and thermal properties are critical to the power electronics module design. This thesis investigates the various aspects of layout design, electrical simulation, thermal simulation, and peripheral design of SiC power electronic modules. ANSYS simulator was used to design and simulate the power electronic modules. The parasitic circuit elements of the power module were obtained from the device parameters given in the datasheet of these SiC bare devices together with the model established in the Q3D simulator. A temperature simulation model is established using SolidWorks to investigate the thermal performance of the power module. The designs of soldering and sintering fixtures are presented. A 1.7kV silicon carbide (SiC) junction field-effect transistor (JFET) cascode power electronic module was designed as an example. By comparing the different module designs, some conclusions are elucidated.
Book Synopsis SiC Technology by : Maurizio Di Paolo Emilio
Download or read book SiC Technology written by Maurizio Di Paolo Emilio and published by Springer Nature. This book was released on with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Latest Advances in Electrothermal Models by : Krzysztof Górecki
Download or read book Latest Advances in Electrothermal Models written by Krzysztof Górecki and published by MDPI. This book was released on 2021-03-17 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is devoted to the latest advances in the area of electrothermal modelling of electronic components and networks. It contains eight sections by different teams of authors. These sections contain the results of: (a) electro-thermal simulations of SiC power MOSFETs using a SPICE-like simulation program; (b) modelling thermal properties of inductors taking into account the influence of the core volume on the efficiency of heat removal; (c) investigations into the problem of inserting a temperature sensor in the neighbourhood of a chip to monitor its junction temperature; (d) computations of the internal temperature of power LEDs situated in modules containing multiple-power LEDs, taking into account both self-heating in each power LED and mutual thermal couplings between each diode; (e) analyses of DC-DC converters using the electrothermal averaged model of the diode–transistor switch, including an IGBT and a rapid-switching diode; (f) electrothermal modelling of SiC power BJTs; (g) analysis of the efficiency of selected algorithms used for solving heat transfer problems at nanoscale; (h) analysis related to thermal simulation of the test structure dedicated to heat-diffusion investigation at the nanoscale.
Book Synopsis Thermal and Electro-Thermal System Simulation by : Márta Rencz
Download or read book Thermal and Electro-Thermal System Simulation written by Márta Rencz and published by MDPI. This book was released on 2019-11-18 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: With increasing power levels and power densities in electronics systems, thermal issues are becoming more and more critical. The elevated temperatures result in changing electrical system parameters, changing the operation of devices, and sometimes even the destruction of devices. To prevent this, the thermal behavior has to be considered in the design phase. This can be done with thermal end electro-thermal design and simulation tools. This Special Issue of Energies, edited by two well-known experts of the field, Prof. Marta Rencz, Budapest University of Technology and Economics, and by Prof. Lorenzo Codecasa, Politecnico di Milano, collects twelve papers carefully selected for the representation of the latest results in thermal and electro-thermal system simulation. These contributions present a good survey of the latest results in one of the most topical areas in the field of electronics: The thermal and electro-thermal simulation of electronic components and systems. Several papers of this issue are extended versions of papers presented at the THERMINIC 2018 Workshop, held in Stockholm in the fall of 2018. The papers presented here deal with modeling and simulation of state-of-the-art applications that are highly critical from the thermal point of view, and around which there is great research activity in both industry and academia. Contributions covered the thermal simulation of electronic packages, electro-thermal advanced modeling in power electronics, multi-physics modeling and simulation of LEDs, and the characterization of interface materials, among other subjects.
Book Synopsis Planning and operation of hybrid renewable energy systems, volume II by : Weihao Hu
Download or read book Planning and operation of hybrid renewable energy systems, volume II written by Weihao Hu and published by Frontiers Media SA. This book was released on 2023-06-06 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Simulation, Modeling and Characterization of SiC Devices by : Liangchun Yu
Download or read book Simulation, Modeling and Characterization of SiC Devices written by Liangchun Yu and published by . This book was released on 2010 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt: With superior material properties, Silicon carbide (SiC) power devices show great potential for high-power density, high temperature switching applications. Among all the power device structures, SiC MOSFET attracts the most attention because of its high gate input impedance, simple gate control and fast switching speed. However, low inversion channel mobility, high near-interface state density close to the conduction band edge, questionable oxide reliability as well as theoretical limit on the device figure-of-merit still remain to be significant challenges to the development of SiC power MOSFETs. In this dissertation, all of the above challenges are addressed from various approaches. First, simulations on the super-junction structure show that the unipolar theoretical limit of SiC can be broken even with the state-of-the-art processing technologies. An easy-to-implement analytical model is developed for calculations of the blocking voltage, specific on-resistance and charge imbalance effects of 4H-SiC super-junction devices. This model is validated by extensive numerical simulations with a large variety of device parameters. Device design and optimization using this model are also presented. Second, a wafer-level Hall mobility measurement technique is developed to measure channel mobility more accurately, more efficiently and more cost-effectively. Device characterization and development are much more convenient by using this technique. With this method, further explorations of interactions between interface traps and channel carriers as well as device degradation mechanisms become possible. Third, reliability of SiO2 on 4H-SiC is characterized with time dependent dielectric breakdown (TDDB) measurements at various temperatures and electric fields. Lifetime prediction to normal operation conditions suggests that the oxide on SiC has a characteristic lifetime of 10 years at 375° C if the oxide electric field is kept below 4.6 MV/cm. The observed excellent reliability data contradict the widespread belief that the oxide on SiC is intrinsically limited by its physical properties. Detailed discussions are provided to re-examine the arguments leading to the misconception.
Book Synopsis Transmit Receive Modules for Radar and Communication Systems by : Rick Sturdivant
Download or read book Transmit Receive Modules for Radar and Communication Systems written by Rick Sturdivant and published by Artech House. This book was released on 2015-12-01 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: The use of electronically scanned phased arrays is increasing in systems such as radar, wireless networks, and satellite ground terminals. An important and necessary component for these systems is the transmit receive (T/R) module, which provides the amplification and electronic beam steering that is required for proper function. This new resource presents a comprehensive overview of all design, fabrication, integration, and implementation issues associated with T/R modules for radar and communications. This book provides engineers and researchers with practical designs and 44 examples of analysis, circuits, and components used in T/R modules. It also provides a solid explanation of the theory for how T/R modules operate and how they can be optimized. In addition, this book shows how the latest technical advances in silicon germanium (SiGe) and gallium nitride (GaN) are allowing levels of performance that were previously unachievable. The book concludes with informative chapters on testing, cost considerations, and the future of next generation T/R modules.
Book Synopsis Design and Simulation of High Voltage 4H Silicon Carbide Power Devices by : Xueqing Li
Download or read book Design and Simulation of High Voltage 4H Silicon Carbide Power Devices written by Xueqing Li and published by . This book was released on 2005 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Power Electronic Packaging by : Yong Liu
Download or read book Power Electronic Packaging written by Yong Liu and published by Springer Science & Business Media. This book was released on 2012-02-15 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronic Packaging presents an in-depth overview of power electronic packaging design, assembly,reliability and modeling. Since there is a drastic difference between IC fabrication and power electronic packaging, the book systematically introduces typical power electronic packaging design, assembly, reliability and failure analysis and material selection so readers can clearly understand each task's unique characteristics. Power electronic packaging is one of the fastest growing segments in the power electronic industry, due to the rapid growth of power integrated circuit (IC) fabrication, especially for applications like portable, consumer, home, computing and automotive electronics. This book also covers how advances in both semiconductor content and power advanced package design have helped cause advances in power device capability in recent years. The author extrapolates the most recent trends in the book's areas of focus to highlight where further improvement in materials and techniques can drive continued advancements, particularly in thermal management, usability, efficiency, reliability and overall cost of power semiconductor solutions.
Book Synopsis Simulation and Modelling of Power Devices Based on 4H Silicon Carbide by : Kazuhiro Adachi
Download or read book Simulation and Modelling of Power Devices Based on 4H Silicon Carbide written by Kazuhiro Adachi and published by . This book was released on 2003 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Inside SPICE written by Ron M. Kielkowski and published by McGraw-Hill Professional Publishing. This book was released on 1998 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a guide to the SPICE simulation program which provides practical methods for generating simulations that are fast, accurate and convergent. The accompanying CD features a Windows-compatible version of RSPICE, the author's simulator, which can be used to model circuits.
