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Sio2 And Its Interfaces Volume 105
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Book Synopsis SiO2 and its Interfaces: by : S. T. Pantelides
Download or read book SiO2 and its Interfaces: written by S. T. Pantelides and published by Cambridge University Press. This book was released on 2014-06-05 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis SiO2 and Its Interfaces: Volume 105 by : S. T. Pantelides
Download or read book SiO2 and Its Interfaces: Volume 105 written by S. T. Pantelides and published by Mrs Proceedings. This book was released on 1988-07-21 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis The Physics of SiO2 and Its Interfaces by : Sokrates T. Pantelides
Download or read book The Physics of SiO2 and Its Interfaces written by Sokrates T. Pantelides and published by Elsevier. This book was released on 2013-09-17 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York on March 22-24, 1978. The book focuses on the properties, reactions, transformations, and structures of silicon dioxide (SiO2). The selection first discusses the electronic properties of vitreous SiO2 and small polaron formation and motion of holes in a-SiO2. Discussions focus on mobility edges and polarons, deep states in the gap, and excitons. The text also ponders on field-dependent hole and exciton transport in SiO2 and electron emission from SiO2 into vacuum. The publication takes a look at the electronic structures of crystalline and amorphous SiO2; band structures and electronic properties of SiO2; and optical absorption spectrum of SiO2. The text also tackles chemical bond and related properties of SiO2; topological effects on the band structure of silica; and properties of localized SiO2 clusters in layers of disordered silicon on silver. The selection is a good reference for physicists and readers interested in the physics of silicon dioxide.
Book Synopsis Polysilicon Films and Interfaces: Volume 106 by : C. Y. Wong
Download or read book Polysilicon Films and Interfaces: Volume 106 written by C. Y. Wong and published by Mrs Proceedings. This book was released on 1988-07-27 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 by : B.E. Deal
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Book Synopsis Proceedings of the Second Symposium on Defects in Silicon by : W. Murray Bullis
Download or read book Proceedings of the Second Symposium on Defects in Silicon written by W. Murray Bullis and published by . This book was released on 1991 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Physics of SiO2 and Its Interfaces by :
Download or read book The Physics of SiO2 and Its Interfaces written by and published by . This book was released on 1978 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Polysilicon Thin Films and Interfaces: Volume 182 by : Theodore Kamins
Download or read book Polysilicon Thin Films and Interfaces: Volume 182 written by Theodore Kamins and published by Mrs Proceedings. This book was released on 1990-11-15 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis Handbook of Surfaces and Interfaces of Materials, Five-Volume Set by : Hari Singh Nalwa
Download or read book Handbook of Surfaces and Interfaces of Materials, Five-Volume Set written by Hari Singh Nalwa and published by Elsevier. This book was released on 2001-10-26 with total page 1915 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook brings together, under a single cover, all aspects of the chemistry, physics, and engineering of surfaces and interfaces of materials currently studied in academic and industrial research. It covers different experimental and theoretical aspects of surfaces and interfaces, their physical properties, and spectroscopic techniques that have been applied to a wide class of inorganic, organic, polymer, and biological materials. The diversified technological areas of surface science reflect the explosion of scientific information on surfaces and interfaces of materials and their spectroscopic characterization. The large volume of experimental data on chemistry, physics, and engineering aspects of materials surfaces and interfaces remains scattered in so many different periodicals, therefore this handbook compilation is needed.The information presented in this multivolume reference draws on two decades of pioneering research on the surfaces and interfaces of materials to offer a complete perspective on the topic. These five volumes-Surface and Interface Phenomena; Surface Characterization and Properties; Nanostructures, Micelles, and Colloids; Thin Films and Layers; Biointerfaces and Applications-provide multidisciplinary review chapters and summarize the current status of the field covering important scientific and technological developments made over past decades in surfaces and interfaces of materials and spectroscopic techniques with contributions from internationally recognized experts from all over the world. Fully cross-referenced, this book has clear, precise, and wide appeal as an essential reference source long due for the scientific community. The complete reference on the topic of surfaces and interfaces of materialsThe information presented in this multivolume reference draws on two decades of pioneering researchProvides multidisciplinary review chapters and summarizes the current status of the fieldCovers important scientific and technological developments made over past decades in surfaces and interfaces of materials and spectroscopic techniquesContributions from internationally recognized experts from all over the world
Book Synopsis Gate Dielectric Integrity by : Dinesh C. Gupta
Download or read book Gate Dielectric Integrity written by Dinesh C. Gupta and published by ASTM International. This book was released on 2000 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: Annotation Contains papers from a January 1999 conference held in San Jose, California, describing concepts and metrology of Gate Dielectric Integrity (GDI) and discussing its applications for material and device processes and tool qualification. Topics include methods, protocols, and reliability assessment as related to dielectric integrity. Papers are organized in sections on concepts, thin gate dielectrics, characterization and applications, and standardization. There is also a section summarizing panel discussions. Gupta is affiliated with Mitsubishi Silicon America. Brown is affiliated with Texas Instruments Inc. Annotation copyrighted by Book News, Inc., Portland, OR.
Book Synopsis Swift Ion Beam Analysis in Nanosciences by : Denis Jalabert
Download or read book Swift Ion Beam Analysis in Nanosciences written by Denis Jalabert and published by John Wiley & Sons. This book was released on 2017-08-07 with total page 241 pages. Available in PDF, EPUB and Kindle. Book excerpt: Swift ion beam analysis (IBA) of materials and their surfaces has been widely applied to many fields over the last half century, constantly evolving to meet new requirements and to take advantage of developments in particle detection and data treatment. Today, emerging fields in nanosciences introduce extreme demands to analysis methods at the nanoscale. This book addresses how analysis with swift ion beams is rising to meet such needs. Aimed at early stage researchers and established researchers wishing to understand how IBA can contribute to their analytical requirements in nanosciences, the basics of the interactions of charged particles with matter, as well as the operation of the relevant equipment, are first presented. Many recent examples from nanoscience research are then explored in which the specific analytical capabilities of IBA are emphasized, together with the place of IBA alongside the wealth of other analytical methods.
Book Synopsis Surface and Interface Science, Volumes 9 and 10 by : Klaus Wandelt
Download or read book Surface and Interface Science, Volumes 9 and 10 written by Klaus Wandelt and published by John Wiley & Sons. This book was released on 2020-03-30 with total page 990 pages. Available in PDF, EPUB and Kindle. Book excerpt: In ten volumes, this unique handbook covers all fundamental aspects of surface and interface science and offers a comprehensive overview of this research area for scientists working in the field, as well as an introduction for newcomers. Volume 1: Concepts and Methods Volume 2: Properties of Elemental Surfaces Volume 3: Properties of Composite Surfaces: Alloys, Compounds, Semiconductors Volume 4: Solid-Solid Interfaces and Thin Films Volume 5: Solid-Gas Interfaces I Volume 6: Solid-Gas Interfaces II Volume 7: Liquid and Biological Interfaces Volume 8: Interfacial Electrochemistry Volume 9: Applications of Surface Science I Volume 10: Applications of Surface Science II Content of Volumes 8 & 9: * Surface Analytics with X-Ray Photoelectron and Auger Electron Spectroscopy on Coated Steel Sheets * Applications of Graphene * Industrial Heterogeneous Catalysis * Automotive Catalysis * High-Throughput Heterogeneous Catalyst Research, Development, Scale-Up, and Production Support * Industrial Separation of Insulating Particles: Triboelectric Charging * Friction: Friend and Foe * Surface Science and Flotation * Application of Surface Science to Corrosion * Electrons, Electrodes, and the Transformation of Organic Molecules * Self-Cleaning Surfaces: From Fundamental Aspect to Real Technical Applications * Thin Films: Sputtering, PVD Methods and Applications * Wafer Bonding * Superconformal Deposition * Spintronics: Surface and Interface Aspects * Device Efficiency of Organic Light-Emitting Diodes * Dye-Sensitized Solar Cells * Electronic Nose: Current Status and Future Trends * Surface Science in Batteries * Surface and Interface Science in Fuel Cells Research
Author :IBM Thomas J. Watson Research Center. International Topical Conference on the Physics of SiO2 and its Interfaces Publisher : ISBN 13 : Total Pages : pages Book Rating :4.:/5 (91 download)
Book Synopsis The Physics of SiO2 and Its Interfaces by : IBM Thomas J. Watson Research Center. International Topical Conference on the Physics of SiO2 and its Interfaces
Download or read book The Physics of SiO2 and Its Interfaces written by IBM Thomas J. Watson Research Center. International Topical Conference on the Physics of SiO2 and its Interfaces and published by . This book was released on 1978 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface by : B.E. Deal
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Book Synopsis Metallography--past, Present, and Future by : George F. Vander Voort
Download or read book Metallography--past, Present, and Future written by George F. Vander Voort and published by ASTM International. This book was released on 1993 with total page 450 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nanotechnology and Photovoltaic Devices by : Jan Valenta
Download or read book Nanotechnology and Photovoltaic Devices written by Jan Valenta and published by CRC Press. This book was released on 2015-06-01 with total page 441 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon is an abundant element and is produced in large quantities for the electronic industry. The falling price of this commodity also feeds the growth of solar photovoltaics (PV). However, solar cells (SCs) based on bulk semiconductors have quite limited maximum attainable performance. Therefore, new principles and materials are being investigat
Book Synopsis Silicon Materials Science and Technology X by : Howard R. Huff
Download or read book Silicon Materials Science and Technology X written by Howard R. Huff and published by The Electrochemical Society. This book was released on 2006 with total page 599 pages. Available in PDF, EPUB and Kindle. Book excerpt: This was the tenth symposium of the International Symposium on Silcon Material Science and Technology, going back to 1969. This issue provides a unique historical record of the program and will aid in the understanding of silicon materials over the last 35 years.
