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Silicon Nitride Gallium Arsenide Interface
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Download or read book Si Silicon written by Eberhard F. Krimmel and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N . This volume, 3 4 "Silicon" Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec tronics and solar ceUs. The compendium is the product of a critical selection among more than 17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900 publications dealing with the fabrication and use of microelectronic devices (including 2400 Japanese patent applications), about 4000 papers have been selected for this volume. The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of silicon nitride in specific devices and device components, and Chapter 32 is devoted exclusively to applications in solar ceUs, including information on our general understanding of the role of silicon nitride in photovoltaic devices. Experimental results on the preparation of silicon nitride layers for application in unspeci fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices, the information is presented in the respective chapters. The general preparation of silicon nitride layers is not covered in this volume, but will appear in "Silicon" Supplement Volume B 5a. See also the Introductory Remarks, Chapter 1, p. 1.
Book Synopsis Proceedings of the Third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films by : Vikram J. Kapoor
Download or read book Proceedings of the Third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films written by Vikram J. Kapoor and published by The Electrochemical Society. This book was released on 1994 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Nitride for Microelectronic Applications by : J. T. Milek
Download or read book Silicon Nitride for Microelectronic Applications written by J. T. Milek and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: This survey is concerned with the use of silicon nitride in the semi conductor and microelectronics industries. The Handbook of Electronic Materials, volume 3, comprises part 1 of this survey and includes preparation and properties information. This report was prepared by Hughes Aircraft Company, Culver City, California under Contract Number F336lS-70-C-1348. The work was admini stered under the direction of the Air Force Materials Laboratory, Air Force Systems Command, Wright-Patterson Air Force Base, Ohio, with Hr. B. Emrich, Project Engineer. The Electronic Properties Information Center (EPIC) is a designated Information Analysis Center of the Department of Defense, authorized to pro vide information to the entire DoD community. The purpose of the Center is to provide a highly competent source of information and data on the electronic, optical and magnetic properties of materials of value to the Department of Defense. Its major function is to evaluate, compile and publish the experi mental data from the world's unclassified literature concerned with the properties of materials. All materials relevant to the field of electronics are within the scope of EPIC: insulators, semiconductors, metals, super conductors, ferrites, ferroelectrics, ferromagnetics, electroluminescents, thermionic emitters and optical materials. The Center's scope includes information on over 100 basic properties of materials; information generally regarded as being in the area of devices and/or circuitry is excluded. v CONTENTS Foreword. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Diffusion Mask Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . '" 11 Glass-to-Metal Seals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Passivation Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Isolation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Memory Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Capacitors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 Radiation Hardening Applications . . . . . . . . . . . . . . . •. . . . . . . . .
Book Synopsis Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Other Emerging Diele[c]trics VIII by : Ram Ekwal Sah
Download or read book Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Other Emerging Diele[c]trics VIII written by Ram Ekwal Sah and published by The Electrochemical Society. This book was released on 2005 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physics and Chemistry of III-V Compound Semiconductor Interfaces by : Carl Wilmsen
Download or read book Physics and Chemistry of III-V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Book Synopsis Fabrication of GaAs Devices by : Albert G. Baca
Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Book Synopsis Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 9 by : Ram Ekwal Sah
Download or read book Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 9 written by Ram Ekwal Sah and published by The Electrochemical Society. This book was released on 2007 with total page 863 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions contains the papers presented in the symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectics held May 6-11, 2007 in Chicago. Papers were presented on deposition, characterization and applications of the dielectrics including high- and low-k dielectrics, as well as interface states, device characterization, reliabiliy and modeling.
Author :Electrochemical Society. Dielectric Science and Technology Division Publisher :The Electrochemical Society ISBN 13 :9781566773133 Total Pages :304 pages Book Rating :4.7/5 (731 download)
Book Synopsis Silicon Nitride and Silicon Dioxide Thin Insulating Films by : Electrochemical Society. Dielectric Science and Technology Division
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by Electrochemical Society. Dielectric Science and Technology Division and published by The Electrochemical Society. This book was released on 2001 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Passivity of Metals and Semiconductors by : Michael Brian Ives
Download or read book Passivity of Metals and Semiconductors written by Michael Brian Ives and published by The Electrochemical Society. This book was released on 2001 with total page 1000 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemical Vapour Deposition by : Anthony C. Jones
Download or read book Chemical Vapour Deposition written by Anthony C. Jones and published by Royal Society of Chemistry. This book was released on 2009 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The book is one of the most comprehensive overviews ever written on the key aspects of chemical vapour deposition processes and it is more comprehensive, technically detailed and up-to-date than other books on CVD. The contributing authors are all practising CVD technologists and are leading international experts in the field of CVD. It presents a logical and progressive overview of the various aspects of CVD processes. Basic concepts, such as the various types of CVD processes, the design of CVD reactors, reaction modelling and CVD precursor chemistry are covered in the first few"--Jacket
Book Synopsis Physics of Semiconductor Devices by : Vikram Kumar
Download or read book Physics of Semiconductor Devices written by Vikram Kumar and published by Allied Publishers. This book was released on 2002 with total page 748 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Nitride and Silicon Dioxide Thin Insulating Films by :
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by and published by . This book was released on 2001 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis GaAs High-Speed Devices by : C. Y. Chang
Download or read book GaAs High-Speed Devices written by C. Y. Chang and published by John Wiley & Sons. This book was released on 1994-10-28 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 1038 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Microscopy of Semiconducting Materials 1987, Proceedings of the Institute of Physics Conference, Oxford University, April 1987 by : A.G. Cullis
Download or read book Microscopy of Semiconducting Materials 1987, Proceedings of the Institute of Physics Conference, Oxford University, April 1987 written by A.G. Cullis and published by CRC Press. This book was released on 2021-02-01 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt: The various forms of microscopy and related microanalytical techniques are making unique contributions to semiconductor research and development that underpin many important areas of microelectronics technology. Microscopy of Semiconducting Materials 1987 highlights the progress that is being made in semiconductor microscopy, primarily in electron probe methods as well as in light optical and ion scattering techniques. The book covers the state of the art, with sections on high resolution microscopy, epitaxial layers, quantum wells and superlattices, bulk gallium arsenide and other compounds, properties of dislocations, device silicon and dielectric structures, silicides and contacts, device testing, x-ray techniques, microanalysis, and advanced scanning microscopy techniques. Contributed by numerous international experts, this volume will be an indispensable guide to recent developments in semiconductor microscopy for all those who work in the field of semiconducting materials and research development.
Book Synopsis Semiconductor Quantum Well Intermixing by : J. T. Lie
Download or read book Semiconductor Quantum Well Intermixing written by J. T. Lie and published by CRC Press. This book was released on 2000-01-18 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure modifiations. Its comprehensive coverage of growth and pos-growth processing technologies along with its presentation of the various interesting and advanced features of the DFQW materials make this book an essential reference to the study of QW layer intermixing.
Book Synopsis Journal of Research of the National Institute of Standards and Technology by :
Download or read book Journal of Research of the National Institute of Standards and Technology written by and published by . This book was released on 1998 with total page 642 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reports NIST research and development in the physical and engineering sciences in which the Institute is active. These include physics, chemistry, engineering, mathematics, and computer sciences. Emphasis on measurement methodology and the basic technology underlying standardization.
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