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Author : J. R. O'Connor
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (847 download)
Download or read book Silicon Carbide, a High Temperature Semiconductor written by J. R. O'Connor and published by . This book was released on 1960 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Joseph R. O'Connor
Publisher :
ISBN 13 :
Total Pages : 552 pages
Book Rating : 4.F/5 ( download)
Download or read book Silicon Carbide, a High Temperature Semiconductor written by Joseph R. O'Connor and published by . This book was released on 1960 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Conference on Silicon Carbide, Boston, 1959
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (144 download)
Download or read book Silicon carbide, a high temperature semiconductor: proceedings of the conference... written by Conference on Silicon Carbide, Boston, 1959 and published by . This book was released on with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Conference on Silicon Carbide (BOSTON, Massachusetts)
Publisher :
ISBN 13 :
Total Pages : 521 pages
Book Rating : 4.:/5 (558 download)
Download or read book Silicon Carbide: a High Temperature Semiconductor. Proceedings of the Conference on Silicon Carbide ... April 2-3, 1959. Edited by J.R. O'Connor and J. Smiltens, Etc written by Conference on Silicon Carbide (BOSTON, Massachusetts) and published by . This book was released on 1960 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Joseph R. O'Connor
Publisher :
ISBN 13 :
Total Pages : 521 pages
Book Rating : 4.:/5 (917 download)
Download or read book Silicon carbide written by Joseph R. O'Connor and published by . This book was released on 1960 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : JOSEPH R. ( EDITOR ) O'CONNOR
Publisher :
ISBN 13 :
Total Pages : 521 pages
Book Rating : 4.:/5 (32 download)
Download or read book SILICON CARBIDE. A HIGH TEMPERATURE SEMICONDUCTOR ; PROCEEDINGS. CONFERENCE, BOSTON 1959 written by JOSEPH R. ( EDITOR ) O'CONNOR and published by . This book was released on 1960 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J. R. O'Connor
Publisher :
ISBN 13 :
Total Pages : 521 pages
Book Rating : 4.:/5 (252 download)
Download or read book Silicon Carbide written by J. R. O'Connor and published by . This book was released on 1960 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book SILICON CARBIDE- A HIGH TEMPERATURE SEMICONDUCTOR- PROCEEDINGS OF A CONFERENCE ON SILICON CARBIDE- ELECTRONICS RESEARCH DIRECTORATE, AIR FORCE CAMBRIDGE RESEARCH CENTER. written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J. Smiltens
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (144 download)
Download or read book Silicon Carbide, a High Temperature Conductor written by J. Smiltens and published by . This book was released on 1960 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : boston Conference on silicon carbide
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (141 download)
Download or read book Silicon Carbide, a High Temperature Semi-conductor: Proceedings of the Conference on Silicon Carbide, Boston, Massachusetts, April 2-3, 1959 written by boston Conference on silicon carbide and published by . This book was released on with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J. R. O'Connor
Publisher :
ISBN 13 :
Total Pages : 521 pages
Book Rating : 4.:/5 (113 download)
Download or read book Silicon carbide a high temperature semiconductor : proceedings written by J. R. O'Connor and published by . This book was released on 1960 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gus J. Caras
Publisher :
ISBN 13 :
Total Pages : 212 pages
Book Rating : 4.3/5 (91 download)
Download or read book Silicon Carbide for Semiconductors written by Gus J. Caras and published by . This book was released on 1965 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : H. K. Henisch
Publisher : Elsevier
ISBN 13 : 1483152618
Total Pages : 379 pages
Book Rating : 4.4/5 (831 download)
Download or read book Silicon Carbide — 1968 written by H. K. Henisch and published by Elsevier. This book was released on 2013-10-22 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide — 1968 presents the proceedings of the International Conference on Silicon Carbide held in University Park, Pennsylvania on October 20-23, 1968. The book covers papers about the perspectives on silicon carbide; several problems in the development of silicon carbide semiconductors, such as the control of crystal structure and analysis. The thermal properties of beta-silicon carbide from 20 to 2000 degrees and the influence of impurities on the growth of silicon carbide crystals in chemical reactions and by recrystallization are also discussed. The book then presents papers about silicon carbide single crystal growth using the Norton process; the principles of solution and traveling solvent growth of silicon carbide; the growth of silicon carbide from cobalt-silicon solutions; and the growth of silicon carbide from vapor by the Bridgman-Stockbarger method. Papers about the growth of crystals and epitaxial layers of beta silicon carbide; the heteroepitaxy of beta-silicon carbide employing liquid metals; some aspects of disorder in silicon carbide; and the dependence of physical properties on polytype structure are also considered. The book describes topics about the optical properties of polytypes of silicon carbide as well as the phase stability of silicon carbide against nitrogen. Other papers about the physical and electronic properties of silicon carbide are also discussed in the book. People involved in semiconductor industries will find the book helpful.
Author : K. Fricke
Publisher : Elsevier Publishing Company
ISBN 13 :
Total Pages : 262 pages
Book Rating : 4.E/5 ( download)
Download or read book High Temperature Electronics written by K. Fricke and published by Elsevier Publishing Company. This book was released on 1995 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings review the state of the art in the field of semiconductor materials for high temperature application. Areas examined include: the material quality of SiC; crystalline and polycrystalline diamond; and the problems of material growth.
Author : Committee on Materials for High-Temperature Semiconductor Devices
Publisher : National Academies Press
ISBN 13 : 030959653X
Total Pages : 136 pages
Book Rating : 4.3/5 (95 download)
Download or read book Materials for High-Temperature Semiconductor Devices written by Committee on Materials for High-Temperature Semiconductor Devices and published by National Academies Press. This book was released on 1995-09-28 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities.
Author : Moumita Mukherjee
Publisher : BoD – Books on Demand
ISBN 13 : 9533079681
Total Pages : 562 pages
Book Rating : 4.5/5 (33 download)
Download or read book Silicon Carbide written by Moumita Mukherjee and published by BoD – Books on Demand. This book was released on 2011-10-10 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.
Author : Michael Dudley
Publisher : Cambridge University Press
ISBN 13 : 9781107409200
Total Pages : 340 pages
Book Rating : 4.4/5 (92 download)
Download or read book Silicon Carbide 2004 - Materials, Processing and Devices: written by Michael Dudley and published by Cambridge University Press. This book was released on 2014-06-05 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) is a wide-bandgap semiconductor that can operate at temperatures well above 300ºC, where silicon cannot perform. In addition, due to a high thermal conductivity equal to copper at room temperature, SiC is an ideal candidate for operation in harsh environments and at high-power levels. Rapid advances in SiC materials and devices have recently resulted in implementation of SiC-based electronic systems, and the impact of these devices is expected to significantly increase in the next several years. This book documents the most recent results on growth of bulk and epitaxial layers, physical and structural properties, process technology, and device development obtained since the 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003) held in Lyon, France. Extended defects in silicon carbide are highlighted. The nature of defects induced by forward biasing of bipolar devices, as well as methods to suppress the degradation, are addressed.
