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Silicon 011 And Silicon Germanium 011 Gas Source Molecular Beam Epitaxy Surface Reconstructions Growth Kinetics And Germanium Segregation
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Book Synopsis Silicon (011) and Silicon Germanium (011) Gas-Source Molecular Beam Epitaxy: Surface Reconstructions, Growth Kinetics, and Germanium Segregation by :
Download or read book Silicon (011) and Silicon Germanium (011) Gas-Source Molecular Beam Epitaxy: Surface Reconstructions, Growth Kinetics, and Germanium Segregation written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Morphological Evolution During Molecular Beam Epitaxy of Germanium/germanium(001) and Silicon/germanium(111). by :
Download or read book Morphological Evolution During Molecular Beam Epitaxy of Germanium/germanium(001) and Silicon/germanium(111). written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of Silicon(1-x) Germanium(x) from Disilane and Digermane by Gas-source Molecular Beam Epitaxy by : Thomas Richard Bramblett
Download or read book Growth of Silicon(1-x) Germanium(x) from Disilane and Digermane by Gas-source Molecular Beam Epitaxy written by Thomas Richard Bramblett and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The growth rate R of Si(001), Ge(001), and $\rm Si\sb{1-x}Ge\sb{x}(001)$ films deposited on Si(001)2 $\times$ 1 substrates from $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6$ by gas-source molecular-beam epitaxy (GS-MBE) were determined as a function of temperature T$\sb{\rm s}$(300-950$\sp\circ$C) and impingement flux J (0.3-$7.7\times10\sp{16}$ cm$\sp{-2}$ s$\sp{-1}$). R(T$\sb{\rm s}$,J) curves for Si and Ge films were well described using a model, with no fitting parameters, based upon dissociative chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from the surface monohydride. The hydrogen desorption activation energy for Si and Ge surfaces were found to be 2.04 eV and 1.56 eV, respectively. The zero-coverage reactive sticking probability in the impingement-flux-limited growth regime was found to be 0.036 and 0.052 for $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6,$ respectively. The growth rate of SiGe alloys R$\sb{\rm SiGe}$ as a function of the bulk Ge content x was found to be a complex. In the surface-reaction-limited regime, R$\sb{\rm SiGe}$ increased with Ge surface coverage $\theta\sb{\rm Ge}$ due to the lower activation energy of H$\sb2$ desorption from Ge than from Si. However, in the impingement-flux-limited regime R$\sb{\rm SiGe}$ decreases with $\theta\sb{\rm Ge}$ due to the lower reactive sticking probability of $\rm Si\sb2H\sb6$ on Ge surface sites with respect to on Si sites. The Ge fraction, x1$\sb{\rm Ge}$, of SiGe alloys was determined as a function of growth temperature T$\sb{\rm s}$ and incident flux ratios $\rm J\sb{Ge2H6}/J\sb{Si2H6}.$ The results were explained by a kinetic model accounting for four simultaneous reaction pathways: reaction of $\rm Si\sb2H\sb6$ with Si surface sites, $\rm Si\sb2H\sb6$ with Ge sites, $\rm Ge\sb2H\sb6$ with Si sites, and $\rm Ge\sb2H\sb6$ with Ge sites. The cross-term reactive sticking probabilities, $\rm S\sbsp{Ge2H6}{Si}$ and $\rm S\sbsp{Si2H6}{Ge}$, were estimated to be 0.33 and $5.2\times10\sp{-3}$ respectively.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2668 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy by : John Condon Bean
Download or read book Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy written by John Condon Bean and published by . This book was released on 1988 with total page 682 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis B-incorporation Kinetics and Charge Transport Property of Silicon Germanide(001) Layer Grown by GS-MBE from Silicon Hydride, Germanium Hydride, and Boron Hydride by : Qing Lu
Download or read book B-incorporation Kinetics and Charge Transport Property of Silicon Germanide(001) Layer Grown by GS-MBE from Silicon Hydride, Germanium Hydride, and Boron Hydride written by Qing Lu and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The growth rates of Si(001) and Ge(001) by gas-source molecular-beam epitaxy (GS-MBE) from $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6$ as a function of T$\sb{\rm s}$ are well described by a model based upon dissociative $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6$ chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from Si and Ge monohydride for which the activation energy is 2.04 and 1.56 eV, respectively. The zero-coverage reactive sticking probability of $\rm Si\sb2H\sb6$ on Si(001)2 x 1 ($\rm Ge\sb2H\sb6$ on Ge(001)2 x 1) in the impingement-flux-limited growth regime was found to be $\rm S\sbsp{Si\sb2H\sb6}{Si} = 0.036\ (S\sbsp{Ge\sb2H\sb6}{Ge} = 0.052).$ The growth rate of $\rm Si\sb{1-x}Ge\sb{x}$ alloys R$\sb{\rm SiGe}$ decreases somewhat with increasing $\rm G\sb2H\sb6$ in the flux-limited growth mode while dramatically increasing $\rm R\sb{SiGe}$ in the surface-reaction-limited regime.
Book Synopsis Kinetic Studies of Growth of Silicon and Silicon Germanium Thin Films: Gas-surface Reactivity, Germanium Surface Segregation, and the Effect of Coincident Atomic Hydrogen by : Yongjun Zheng
Download or read book Kinetic Studies of Growth of Silicon and Silicon Germanium Thin Films: Gas-surface Reactivity, Germanium Surface Segregation, and the Effect of Coincident Atomic Hydrogen written by Yongjun Zheng and published by . This book was released on 2000 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on the kinetic studies presented in this thesis, a novel process was proposed to achieve selective epitaxial growth of Si and Si1-x Gex. Preliminary results show that up to 300 nm epitaxial silicon has been grown while with no sign of polycrystalline silicon growth.
Book Synopsis Evolution of the Surface Morphology of Homoepitaxial Germanium(001) and Heteropitaxial Silicon(0.5) Germanium(0.5)/germanium(001) Deposited by Molecular Beam Epitaxy at Reduced Temperatures by : Joseph Edward Van Nostrand
Download or read book Evolution of the Surface Morphology of Homoepitaxial Germanium(001) and Heteropitaxial Silicon(0.5) Germanium(0.5)/germanium(001) Deposited by Molecular Beam Epitaxy at Reduced Temperatures written by Joseph Edward Van Nostrand and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We present comprehensive experimental results on the fashion in which the Ge(001) surface roughens as a function of film thickness, deposition temperature, and substrate miscut. The results allow us to write empirical expressions for feature spacing and roughness amplitude of the growing surface over a wide range of film thicknesses and deposition temperatures. We show that layer-by-layer growth on a singular surface in the presence of a small Ehrlich-Schwoebel leads to mound formation, and, from our experimental results, we extract an activation energy for the Ehrlich-Schwoebel barrier of $rm Esb{ES}approx 1meV$ for Ge(001). The effect of the Ehrlich-Schwoebel barrier does not diminish with an increase in deposition temperature, and hence the transition of the growth mode from multilayer to step flow is due to the competing process of smoothing becoming the dominant mechanism. Deposition on a vicinal surface miscut in the (011) results in the formation of elongated mounds bounded by ${105}$ facets. Thin $rm Sisb{0.5}Gesb{0.5}/Ge(001)$ films deposited in the presence of tensile strain result in the formation of Shockley partial misfit dislocations and a subsequent stacking fault. The stacking faults extend to the film surface, where they impede step flow. This results in step bunching and the formation of rectangular mounds on the surface. Annealing these films results in an inversion of the mounds into pits.
Book Synopsis Rapid Thermal Vapor Phase Epitaxy by : John D. Leighton
Download or read book Rapid Thermal Vapor Phase Epitaxy written by John D. Leighton and published by . This book was released on 1994 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Epitaxial Growth of Nitrides on Germanium by : Ruben Lieten
Download or read book Epitaxial Growth of Nitrides on Germanium written by Ruben Lieten and published by ASP / VUBPRESS / UPA. This book was released on 2009-09 with total page 175 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements.
Book Synopsis Metallization and Solid Phase Epitaxy of Germanium-silicon Alloys by : Qi-Zhong Hong
Download or read book Metallization and Solid Phase Epitaxy of Germanium-silicon Alloys written by Qi-Zhong Hong and published by . This book was released on 1991 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1999 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Book Synopsis Silicon, Germanium, and Their Alloys by : Gudrun Kissinger
Download or read book Silicon, Germanium, and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic
Book Synopsis SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices by : John D. Cressler
Download or read book SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Book Synopsis Selective Molecular Beam Epitaxy of Germanium on Oxide-covered Silicon by : Qiming Li
Download or read book Selective Molecular Beam Epitaxy of Germanium on Oxide-covered Silicon written by Qiming Li and published by . This book was released on 2005 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Nikolai N. Ledentsov Publisher :Springer Science & Business Media ISBN 13 :9783540657941 Total Pages :114 pages Book Rating :4.6/5 (579 download)
Book Synopsis Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy by : Nikolai N. Ledentsov
Download or read book Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy written by Nikolai N. Ledentsov and published by Springer Science & Business Media. This book was released on 1999-07-02 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion. It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.