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Separating Radiation And Thermal Effects On Lateral Pnp Bipolar Junction Transistors Operating In The Space Environment
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Book Synopsis Separating Radiation and Thermal Effects on Lateral PNP Bipolar Junction Transistors Operating in the Space Environment by : Michael J. Campola
Download or read book Separating Radiation and Thermal Effects on Lateral PNP Bipolar Junction Transistors Operating in the Space Environment written by Michael J. Campola and published by . This book was released on 2011 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors. Radiation-induced excess base current is the primary cause of current gain degradation. Analysis of base current response can enable the measurement of defects generated by radiation exposure. In addition to radiation, the space environment is also characterized by extreme temperature fluctuations. Temperature, like radiation, also has a very strong impact on base current. Thus, a technique for separating the effects of radiation from thermal effects is necessary in order to accurately measure radiation-induced damage in space. This thesis focuses on the extraction of radiation damage in lateral PNP bipolar junction transistors and the space environment. It also describes the measurement techniques used and provides a quantitative analysis methodology for separating radiation and thermal effects on the bipolar base current.
Book Synopsis Characterization of Ionizing Radiation Effects in Lateral PNP Bipolar Junction Transistors and Identification of Gate Control as a Hardening Approach by : Hugh James Barnaby
Download or read book Characterization of Ionizing Radiation Effects in Lateral PNP Bipolar Junction Transistors and Identification of Gate Control as a Hardening Approach written by Hugh James Barnaby and published by . This book was released on 1995 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Bipolar Transistors for Use in Monolithic Bandgap References and Temperature Transducers by : Koert van der Lingen
Download or read book Bipolar Transistors for Use in Monolithic Bandgap References and Temperature Transducers written by Koert van der Lingen and published by . This book was released on 1996 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zusammenfassung niederländisch.
Book Synopsis Separation of Ionization and Displacement Damage Using Gate-controlled Lateral PNP Bipolar Transistors by : Dennis Ray Ball
Download or read book Separation of Ionization and Displacement Damage Using Gate-controlled Lateral PNP Bipolar Transistors written by Dennis Ray Ball and published by . This book was released on 2003 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors by : Blayne S. Tolleson
Download or read book Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors written by Blayne S. Tolleson and published by . This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: A modeling platform for predicting total ionizing dose (TID) and dose rate response of commercial commercial-off-the-shelf (COTS) linear bipolar circuits and technologies is introduced. Tasks associated with the modeling platform involve the development of model to predict the excess current response in a bipolar transistor given inputs of interface (NIT) and oxide defects (NOT) which are caused by ionizing radiation exposure. Existing models that attempt to predict this excess base current response are derived and discussed in detail. An improved model is proposed which modifies the existing model and incorporates the impact of charged interface trap defects on radiation-induced excess base current. The improved accuracy of the new model in predicting excess base current response in lateral PNP (LPNP) is then verified with Technology Computer Aided Design (TCAD) simulations. Finally, experimental data and compared with the improved and existing model calculations.
Book Synopsis The Effects of Emitter-tied Field Plates on Lateral PNP Ionizing Radiation Response by :
Download or read book The Effects of Emitter-tied Field Plates on Lateral PNP Ionizing Radiation Response written by and published by . This book was released on 1998 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation response comparisons of lateral PNP bipolar technologies reveal that device hardening may be achieved by extending the emitter contact over the active base. The emitter-tied field plate suppresses recombination of carriers with interface traps.
Book Synopsis Bimolekulare Lipidschicht bis Disyringa by :
Download or read book Bimolekulare Lipidschicht bis Disyringa written by and published by . This book was released on 1994 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Mechanisms of Ionizing-radiation-induced Gain Degradation in Lateral PNP BJTs by :
Download or read book Mechanisms of Ionizing-radiation-induced Gain Degradation in Lateral PNP BJTs written by and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Accelerated Tests for Bounding the Low Dose Rate Radiation Response of Lateral PNP Bipolar Junction Transistors by :
Download or read book Accelerated Tests for Bounding the Low Dose Rate Radiation Response of Lateral PNP Bipolar Junction Transistors written by and published by . This book was released on 1996 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low dose rate gain degradation of lateral pnp bipolar transistors can be simulated by accelerated irradiations performed at approximately 135 degrees C. Degradation enhancement is explained by temperature- dependent radiation-induced interface trap formation above the transistor's base.
Book Synopsis Analytical Modeling of Thermal Effects in Pnp InP-based Heterojunction Bipolar Transistors by : Robert E. Peddenpohl
Download or read book Analytical Modeling of Thermal Effects in Pnp InP-based Heterojunction Bipolar Transistors written by Robert E. Peddenpohl and published by . This book was released on 2000 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices by : Ronald D Schrimpf
Download or read book Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices written by Ronald D Schrimpf and published by World Scientific. This book was released on 2004-07-29 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.
Book Synopsis Radiation Tolerant Electronics, Volume II by : Paul LeRoux
Download or read book Radiation Tolerant Electronics, Volume II written by Paul LeRoux and published by Mdpi AG. This book was released on 2023-01-16 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade. After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1966 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ionizing Radiation Effects In Mos Oxides by : Timothy R Oldham
Download or read book Ionizing Radiation Effects In Mos Oxides written by Timothy R Oldham and published by World Scientific. This book was released on 2000-01-25 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability.
Book Synopsis Semiconductor Radiation Detectors by : Gerhard Lutz
Download or read book Semiconductor Radiation Detectors written by Gerhard Lutz and published by Springer. This book was released on 2007-06-15 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: Starting from basic principles, this book describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. The author, whose own contributions to these developments have been significant, explains the working principles of semiconductor radiation detectors in an intuitive way. Broad coverage is also given to electronic signal readout and to the subject of radiation damage.
Book Synopsis Semiconductor Detector Systems by : Helmuth Spieler
Download or read book Semiconductor Detector Systems written by Helmuth Spieler and published by OUP Oxford. This book was released on 2005-08-25 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2352 pages. Available in PDF, EPUB and Kindle. Book excerpt:
