Semiconductor Interfaces Formation And Properties

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Semiconductor Interfaces: Formation and Properties

Author : Guy LeLay
Publisher : Springer Science & Business Media
ISBN 13 : 3642729673
Total Pages : 399 pages
Book Rating : 4.6/5 (427 download)

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Book Synopsis Semiconductor Interfaces: Formation and Properties by : Guy LeLay

Download or read book Semiconductor Interfaces: Formation and Properties written by Guy LeLay and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 399 pages. Available in PDF, EPUB and Kindle. Book excerpt: The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.

Semiconductor Interfaces

Author : Guy Lelay
Publisher :
ISBN 13 :
Total Pages : 408 pages
Book Rating : 4.:/5 (67 download)

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Book Synopsis Semiconductor Interfaces by : Guy Lelay

Download or read book Semiconductor Interfaces written by Guy Lelay and published by . This book was released on 1987-11-16 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: The trend towards miniaturization of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role upon semiconductor interfaces. Great advances have recently been made in the production of new thin-film materials and in the characterization of their interfacial properties down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures given by specialists at the International Winter School on "Semiconductor Interfaces: Formation and Properties," which was held at the Centre de Physique des Houches from 24 February to 6 March, 1987. The following topics are particularly emphasised: - Interface formation, including molecular beam epitaxy, the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. - Characterization down to the atomic scale using techniques such as STM, HRTEM, SEXAFS and SEELFS. - Specific physical properties of the interfaces and their prospective device applications.

Formation of Semiconductor Interfaces

Author : J. Pollman
Publisher :
ISBN 13 : 9789814535113
Total Pages : 818 pages
Book Rating : 4.5/5 (351 download)

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Book Synopsis Formation of Semiconductor Interfaces by : J. Pollman

Download or read book Formation of Semiconductor Interfaces written by J. Pollman and published by . This book was released on 1994 with total page 818 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electronic Properties of Semiconductor Interfaces

Author : Winfried Mönch
Publisher : Springer Science & Business Media
ISBN 13 : 3662069458
Total Pages : 269 pages
Book Rating : 4.6/5 (62 download)

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Book Synopsis Electronic Properties of Semiconductor Interfaces by : Winfried Mönch

Download or read book Electronic Properties of Semiconductor Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

Semiconductor Interfaces

Author : Jacques Derrien
Publisher : Springer
ISBN 13 :
Total Pages : 412 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Semiconductor Interfaces by : Jacques Derrien

Download or read book Semiconductor Interfaces written by Jacques Derrien and published by Springer. This book was released on 1987 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Control of Semiconductor Interfaces

Author : I. Ohdomari
Publisher : Elsevier
ISBN 13 : 1483290484
Total Pages : 600 pages
Book Rating : 4.4/5 (832 download)

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Book Synopsis Control of Semiconductor Interfaces by : I. Ohdomari

Download or read book Control of Semiconductor Interfaces written by I. Ohdomari and published by Elsevier. This book was released on 2017-05-03 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses exclusively on control of interfacial properties and structures for semiconductor device applications from the point of view of improving and developing novel electrical properties. The following topics are covered: metal-semiconductors, semiconductor hetero-interfaces, characterization, semiconducting new materials, insulator-semiconductor, interfaces in device, control of interface formation, control of interface properties, contact metallization. A variety of up-to-date research topics such as atomic layer epitaxy, atomic layer passivation, atomic scale characterization including STM and SR techniques, single ion implementation, self-organization crystal growth, in situ measurements for process control and extremely high-spatial resolution analysis techniques, are also included. Furthermore it bridges the macroscopic, mesoscopic, and atomic-scale regimes of semicondutor interfaces, describing the state of the art in forming, controlling and characterizating unique semiconductor interfaces, which will be of practical importance in advanced devices. Intended for both technologists who require an up-to-date assessment of methods for interface formation, processing and characterization, and solid state researchers who desire the latest developments in understanding the basic mechanisms of interface physics, chemistry and electronics, this book will be a welcome addition to the existing literature.

Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference

Author : J Pollman
Publisher : World Scientific
ISBN 13 : 9814552399
Total Pages : 818 pages
Book Rating : 4.8/5 (145 download)

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Book Synopsis Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference by : J Pollman

Download or read book Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference written by J Pollman and published by World Scientific. This book was released on 1994-06-09 with total page 818 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.

Semiconductor Interfaces, Microstructures and Devices

Author : Zhe Chuan Feng
Publisher : CRC Press
ISBN 13 : 9780750301800
Total Pages : 318 pages
Book Rating : 4.3/5 (18 download)

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Book Synopsis Semiconductor Interfaces, Microstructures and Devices by : Zhe Chuan Feng

Download or read book Semiconductor Interfaces, Microstructures and Devices written by Zhe Chuan Feng and published by CRC Press. This book was released on 1993-01-01 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: A semiconductor interface is the contact between the semiconductor itself and a metal. The interface is a site of change, and it is imperative to ensure that the semiconducting material is sealed at this point to maintain its reliability. This book examines various aspects of interfaces, showing how they can affect microstructures and devices such as infrared photodetectors (as used in nightsights) and blue diode lasers. It presents various techniques for examining different types of semiconductor material and suggests future potential commercial applications for different semiconductor devices. Written by experts in their fields and focusing on metallic semiconductors (Cadmium Telluride and related compounds), this comprehensive overview of recent developments is an essential reference for those working in the semiconductor industry and provides a concise and comprehensive introduction to those new to the field.

Physics and Chemistry of III-V Compound Semiconductor Interfaces

Author : Carl Wilmsen
Publisher : Springer Science & Business Media
ISBN 13 : 1468448358
Total Pages : 472 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Physics and Chemistry of III-V Compound Semiconductor Interfaces by : Carl Wilmsen

Download or read book Physics and Chemistry of III-V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.

Field Effect in Semiconductor-Electrolyte Interfaces

Author : Pavel P. Konorov
Publisher : Princeton University Press
ISBN 13 : 0691223726
Total Pages : pages
Book Rating : 4.6/5 (912 download)

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Book Synopsis Field Effect in Semiconductor-Electrolyte Interfaces by : Pavel P. Konorov

Download or read book Field Effect in Semiconductor-Electrolyte Interfaces written by Pavel P. Konorov and published by Princeton University Press. This book was released on 2021-01-12 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a state-of-the-art understanding of semiconductor-electrolyte interfaces. It provides a detailed study of semiconductor-electrolyte interfacial effects, focusing on the physical and electrochemical foundations that affect surface charge, capacitance, conductance, quantum effects, and other properties, both from the point of view of theoretical modeling and metrology. The wet-dry interface, where solid-state devices may be in contact with electrolyte solutions, is of growing interest and importance. This is because such interfaces will be a key part of hydrogen energy and solar cells, and of sensors that would have wide applications in medicine, genomics, environmental science, and bioterrorism prevention. The field effect presented here by Pavel Konorov, Adil Yafyasov, and Vladislav Bogevolnov is a new method, one that allows investigation of the physical properties of semiconductor and superconductor surfaces. Before the development of this method, it was impossible to test these surfaces at room temperature. The behavior of electrodes in electrolytes under such realistic conduction conditions has been a major problem for the technical realization of systems that perform measurements in wet environments. This book also describes some material properties that were unknown before the development of the field effect method. This book will be of great interest to students and engineers working in semiconductor surface physics, electrochemistry, and micro- and nanoelectronics.

Formation of Semiconductor Interfaces

Author : B. Lengeler
Publisher : World Scientific Publishing Company Incorporated
ISBN 13 : 9789810215590
Total Pages : 787 pages
Book Rating : 4.2/5 (155 download)

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Book Synopsis Formation of Semiconductor Interfaces by : B. Lengeler

Download or read book Formation of Semiconductor Interfaces written by B. Lengeler and published by World Scientific Publishing Company Incorporated. This book was released on 1994 with total page 787 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Physics of Submicron Semiconductor Devices

Author : Harold L. Grubin
Publisher : Springer Science & Business Media
ISBN 13 : 1489923829
Total Pages : 729 pages
Book Rating : 4.4/5 (899 download)

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Book Synopsis The Physics of Submicron Semiconductor Devices by : Harold L. Grubin

Download or read book The Physics of Submicron Semiconductor Devices written by Harold L. Grubin and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 729 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.

Basic Properties of Semiconductors

Author : P.T. Landsberg
Publisher : Elsevier
ISBN 13 : 1483291103
Total Pages : 1219 pages
Book Rating : 4.4/5 (832 download)

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Book Synopsis Basic Properties of Semiconductors by : P.T. Landsberg

Download or read book Basic Properties of Semiconductors written by P.T. Landsberg and published by Elsevier. This book was released on 2016-04-19 with total page 1219 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the next two analyze impurities in semiconductors. Then follow chapters on semiconductor statistics and on surfaces, interfaces and band offsets as they occur in heterojunctions. Chapters 8 to 19 report on newer topics (though a survey of transport properties of carriers is also included). Among these are transport of hot electrons, and thermoelectric effects including here and elsewhere properties of low-dimensional and mesoscopic structures. The electron-hole liquid, the quantum Hall effect, localisation, ballistic transport, coherence in superlattices, current ideas on tunnelling and on quantum confinement and scattering processes are also covered.

Metallization and Metal-Semiconductor Interfaces

Author : Inder P. Batra
Publisher : Springer Science & Business Media
ISBN 13 : 1461307953
Total Pages : 501 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Metallization and Metal-Semiconductor Interfaces by : Inder P. Batra

Download or read book Metallization and Metal-Semiconductor Interfaces written by Inder P. Batra and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as sessment of the various models. A significant fraction of the workshop time was also spent in discussing the interaction of alkali metals with semiconductors. Alkali metals on semi conductors form ordered overlayers and the resulting system often exhibits one-dimensional metallic properties. The nature of their interaction has introduced new and exciting com plexities and this was pursued at length during the lively discussions at the workshop. A half a day was devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an international level. It should also serve as an excellent introduction to the field, since sufficient review type of material has also been included The workshop organizers, Dr. I. P. Batra (Director), mM Almaden Research Center, San Jose, Prof. S. Ciraci, Bilkent University, Ankara, Prof. C. Y. Pong, University of California, Davis, Prof. Dr. F. Koch (Local Chairman), Technical University Munich, Garching, Dr. H.

Survey of Semiconductor Physics

Author : Karl W. Böer
Publisher : Springer Science & Business Media
ISBN 13 : 9401129126
Total Pages : 1477 pages
Book Rating : 4.4/5 (11 download)

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Book Synopsis Survey of Semiconductor Physics by : Karl W. Böer

Download or read book Survey of Semiconductor Physics written by Karl W. Böer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 1477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a graduate level class had to be interwoven with others written in shorter, reference style. The pointers at the right-hand page header will assist in distinguishing the more diffi cult reference parts of the book (with the pointer to the right) from the more easy-to-read basic educational sections (with the pointer tending to the left).

Survey of Semiconductor Physics

Author : Karl Wolfgang Böer
Publisher : Springer Science & Business Media
ISBN 13 : 9780442006723
Total Pages : 1496 pages
Book Rating : 4.0/5 (67 download)

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Book Synopsis Survey of Semiconductor Physics by : Karl Wolfgang Böer

Download or read book Survey of Semiconductor Physics written by Karl Wolfgang Böer and published by Springer Science & Business Media. This book was released on 1990 with total page 1496 pages. Available in PDF, EPUB and Kindle. Book excerpt: Taking up where the first volume left off, this work provides coverage of the inhomogeneous semiconductor. It deals mainly with Si and GaAs, but also investigates other materials of theoretical and practical interest, such as Ge, other III-V and II-VI compounds, and amorphous SiH. Equipped with this source, physicists, semiconductor engineers, device engineers and fabrication engineers will have access to a vast reservoir of practical information on the design, production and operations of semiconductor devices.

Handbook on Synchrotron Radiation

Author : G.V. Marr
Publisher : Elsevier
ISBN 13 : 1483290638
Total Pages : 859 pages
Book Rating : 4.4/5 (832 download)

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Book Synopsis Handbook on Synchrotron Radiation by : G.V. Marr

Download or read book Handbook on Synchrotron Radiation written by G.V. Marr and published by Elsevier. This book was released on 2013-10-22 with total page 859 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume 2 of this series concentrates on the use of synchrotron radiation which covers that region of the electromagnetic spectrum which extends from about 10eV to 3keV in photon energy and is essentially the region where the radiation is strongly absorbed by atmospheric gases. It therefore has to make extensive use of a high vacuum to transport the radiation to the workstation where the presence of hard X-rays can cause extensive damage to both the optics and the targets used in the experimental rigs. The topics chosen for this volume have been limited to the disciplines of physics and chemistry.