Selective Area Growth of Cubic Gallium Nitride by Molecular Beam Epitaxy

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ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (138 download)

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Book Synopsis Selective Area Growth of Cubic Gallium Nitride by Molecular Beam Epitaxy by : Falco Meier

Download or read book Selective Area Growth of Cubic Gallium Nitride by Molecular Beam Epitaxy written by Falco Meier and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Chemical Beam Epitaxy of Gallium Nitride on Silicon

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ISBN 13 :
Total Pages : 576 pages
Book Rating : 4.:/5 (499 download)

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Book Synopsis Chemical Beam Epitaxy of Gallium Nitride on Silicon by : Agnès Tempez

Download or read book Chemical Beam Epitaxy of Gallium Nitride on Silicon written by Agnès Tempez and published by . This book was released on 2001 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Novel Compound Semiconductor Nanowires

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Publisher : CRC Press
ISBN 13 : 1315340720
Total Pages : 420 pages
Book Rating : 4.3/5 (153 download)

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Book Synopsis Novel Compound Semiconductor Nanowires by : Fumitaro Ishikawa

Download or read book Novel Compound Semiconductor Nanowires written by Fumitaro Ishikawa and published by CRC Press. This book was released on 2017-10-17 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.

Growth of Gallium Nitride Using Molecular Beam Epitaxy

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ISBN 13 :
Total Pages : 110 pages
Book Rating : 4.:/5 (479 download)

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Book Synopsis Growth of Gallium Nitride Using Molecular Beam Epitaxy by : Jun Chen

Download or read book Growth of Gallium Nitride Using Molecular Beam Epitaxy written by Jun Chen and published by . This book was released on 2001 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Molecular Beam Epitaxy of Gallium Nitride

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ISBN 13 :
Total Pages : 452 pages
Book Rating : 4.:/5 (626 download)

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Book Synopsis The Molecular Beam Epitaxy of Gallium Nitride by : Andrew Mark Johnston

Download or read book The Molecular Beam Epitaxy of Gallium Nitride written by Andrew Mark Johnston and published by . This book was released on 1996 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Development of Epitaxial N and P-type Gallium Nitride by Ionized Molecular Beam Epitaxy and Reactive Magnetron Sputtering

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ISBN 13 :
Total Pages : 230 pages
Book Rating : 4.:/5 (33 download)

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Book Synopsis Development of Epitaxial N and P-type Gallium Nitride by Ionized Molecular Beam Epitaxy and Reactive Magnetron Sputtering by : Jennifer Taitt Ross

Download or read book Development of Epitaxial N and P-type Gallium Nitride by Ionized Molecular Beam Epitaxy and Reactive Magnetron Sputtering written by Jennifer Taitt Ross and published by . This book was released on 1993 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Gallium Nitride and Related Materials II: Volume 468

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Publisher : Materials Research Society
ISBN 13 : 9781558993723
Total Pages : 534 pages
Book Rating : 4.9/5 (937 download)

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Book Synopsis Gallium Nitride and Related Materials II: Volume 468 by : C. R. Abernathy

Download or read book Gallium Nitride and Related Materials II: Volume 468 written by C. R. Abernathy and published by Materials Research Society. This book was released on 1997-08-13 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.

Transmission Electron Microscopy Studies of Gallium Nitride Nanostructures Grown by Molecular Beam Epitaxy

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ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (931 download)

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Book Synopsis Transmission Electron Microscopy Studies of Gallium Nitride Nanostructures Grown by Molecular Beam Epitaxy by : Ian John Griffiths

Download or read book Transmission Electron Microscopy Studies of Gallium Nitride Nanostructures Grown by Molecular Beam Epitaxy written by Ian John Griffiths and published by . This book was released on 2010 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon-based Nanomaterials

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Publisher : Springer Science & Business Media
ISBN 13 : 1461481694
Total Pages : 414 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Silicon-based Nanomaterials by : Handong Li

Download or read book Silicon-based Nanomaterials written by Handong Li and published by Springer Science & Business Media. This book was released on 2013-10-02 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: A variety of nanomaterials have excellent optoelectronic and electronic properties for novel device applications. At the same time, and with advances in silicon integrated circuit (IC) techniques, compatible Si-based nanomaterials hold promise of applying the advantages of nanomaterials to the conventional IC industry. This book focuses not only on silicon nanomaterials, but also summarizes up-to-date developments in the integration of non-silicon nanomaterials on silicon. The book showcases the work of leading researchers from around the world who address such key questions as: Which silicon nanomaterials can give the desired optical, electrical, and structural properties, and how are they prepared? What nanomaterials can be integrated on to a silicon substrate and how is this accomplished? What Si-based nanomaterials may bring a breakthrough in this field? These questions address the practical issues associated with the development of nanomaterial-based devices in applications areas such as solar cells, luminous devices for optical communication (detectors, lasers), and high mobility transistors. Investigation of silicon-based nanostructures is of great importance to make full use of nanomaterials for device applications. Readers will receive a comprehensive view of Si-based nanomaterials, which will hopefully stimulate interest in developing novel nanostructures or techniques to satisfy the requirements of high performance device applications. The goal is to make nanomaterials the main constituents of the high performance devices of the future.

Molecular Beam Epitaxy of Gallium Nitride on Silicon Carbide

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ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (144 download)

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Book Synopsis Molecular Beam Epitaxy of Gallium Nitride on Silicon Carbide by : Vidhya Ramachandran

Download or read book Molecular Beam Epitaxy of Gallium Nitride on Silicon Carbide written by Vidhya Ramachandran and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Gallium Nitride and Related Materials

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Publisher :
ISBN 13 :
Total Pages : 538 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Gallium Nitride and Related Materials by :

Download or read book Gallium Nitride and Related Materials written by and published by . This book was released on 1997 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Substrate Preparation for the Growth of Gallium Nitride Semiconductors by Molecular Beam Epitaxy

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ISBN 13 :
Total Pages : 358 pages
Book Rating : 4.:/5 (424 download)

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Book Synopsis Substrate Preparation for the Growth of Gallium Nitride Semiconductors by Molecular Beam Epitaxy by : Thomas Joseph Kropewnicki

Download or read book Substrate Preparation for the Growth of Gallium Nitride Semiconductors by Molecular Beam Epitaxy written by Thomas Joseph Kropewnicki and published by . This book was released on 1999 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Construction of the Preparation, Growth and Characterization Chamber of Molecular Beam Epitaxy System and Some Studies of the Iron-gallium Nitride System with a View to Spintronics Applications

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ISBN 13 :
Total Pages : 232 pages
Book Rating : 4.:/5 (226 download)

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Book Synopsis Construction of the Preparation, Growth and Characterization Chamber of Molecular Beam Epitaxy System and Some Studies of the Iron-gallium Nitride System with a View to Spintronics Applications by : I Pui Hui

Download or read book Construction of the Preparation, Growth and Characterization Chamber of Molecular Beam Epitaxy System and Some Studies of the Iron-gallium Nitride System with a View to Spintronics Applications written by I Pui Hui and published by . This book was released on 2007 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Growth of Gallium Nitride Thin Films by Electron Cyclotron Resonance Microwave Plasma-assisted Molecular Beam Epitaxy

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ISBN 13 :
Total Pages : 340 pages
Book Rating : 4.:/5 (27 download)

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Book Synopsis Growth of Gallium Nitride Thin Films by Electron Cyclotron Resonance Microwave Plasma-assisted Molecular Beam Epitaxy by : Charles Robert Eddy

Download or read book Growth of Gallium Nitride Thin Films by Electron Cyclotron Resonance Microwave Plasma-assisted Molecular Beam Epitaxy written by Charles Robert Eddy and published by . This book was released on 1990 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Growth and Doping of Gallium Nitride (GaN) Thin Films by Electron Cyclotron Resonance Plasma Assisted Molecular Beam Epitaxy (ECR-MBE)

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Publisher :
ISBN 13 :
Total Pages : 316 pages
Book Rating : 4.:/5 (341 download)

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Book Synopsis The Growth and Doping of Gallium Nitride (GaN) Thin Films by Electron Cyclotron Resonance Plasma Assisted Molecular Beam Epitaxy (ECR-MBE) by : Richard J. Molnar

Download or read book The Growth and Doping of Gallium Nitride (GaN) Thin Films by Electron Cyclotron Resonance Plasma Assisted Molecular Beam Epitaxy (ECR-MBE) written by Richard J. Molnar and published by . This book was released on 1995 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electrical & Electronics Abstracts

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ISBN 13 :
Total Pages : 2240 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Electrical & Electronics Abstracts by :

Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Novel Aspects of Diamond

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Publisher : Springer
ISBN 13 : 303012469X
Total Pages : 507 pages
Book Rating : 4.0/5 (31 download)

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Book Synopsis Novel Aspects of Diamond by : Nianjun Yang

Download or read book Novel Aspects of Diamond written by Nianjun Yang and published by Springer. This book was released on 2019-04-02 with total page 507 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is in honor of the contribution of Professor Xin Jiang (Institute of Materials Engineering, University of Siegen, Germany) to diamond. The objective of this book is to familiarize readers with the scientific and engineering aspects of CVD diamond films and to provide experienced researchers, scientists, and engineers in academia and industry with the latest developments and achievements in this rapidly growing field. This 2nd edition consists of 14 chapters, providing an updated, systematic review of diamond research, ranging from its growth, and properties up to applications. The growth of single-crystalline and doped diamond films is included. The physical, chemical, and engineering properties of these films and diamond nanoparticles are discussed from theoretical and experimental aspects. The applications of various diamond films and nanoparticles in the fields of chemistry, biology, medicine, physics, and engineering are presented.