Scalability And Reliability Of Phase Change Memory

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Scalability and Reliability of Phase Change Memory

Author : SangBum Kim
Publisher : Stanford University
ISBN 13 :
Total Pages : 169 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Scalability and Reliability of Phase Change Memory by : SangBum Kim

Download or read book Scalability and Reliability of Phase Change Memory written by SangBum Kim and published by Stanford University. This book was released on 2010 with total page 169 pages. Available in PDF, EPUB and Kindle. Book excerpt: Various memory devices are being widely used for a wide range of applications. There has not been any universal memory device so far because each memory device has a unique set of features. Large performance gaps in various dimensions of features between memory devices and a new set of features required by new electronic systems such as portable electronics open up new opportunities for new memory devices to emerge as mainstream memory devices. Besides, the imminent scaling limit for existing mainstream memory devices also motivates development and research of new memory devices which can meet the increasing demand for large memory capacity. Phase change memory (PCM) is one of the most promising emerging memory devices. It has the potential to combine DRAM-like features such as bit alteration, fast read and write, and good endurance and Flash-like features such as non-volatility and a simple structure. PCM is expected to be a highly scalable technology extending beyond scaling limit of existing memory devices. Prototypical PCM chips have been developed and are being tested for targeted memory applications. However, understanding of fundament physics behind PCM operation is still lacking because the key material in PCM devices, the chalcogenide, is relatively new for use in solid state devices. Evaluation and development of PCM technology as successful mainstream memory devices require more study on PCM devices. This thesis focuses on issues relevant to scalability and reliability of PCM which are two of the most important qualities that new emerging memory devices should demonstrate. We first study basic scaling rule based on thermoelectric analysis on the maximum temperature in a PCM cell and show that both isotropic and non-isotropic scaling result in constant programming voltage. The minimum programming voltage is determined by material properties such as electrical resistivity and thermal conductivity regardless of the device size. These results highlight first-order principles governing scaling rules. In the first-order scaling rule analysis, we assume that material properties are constant regardless of its physical size. However, when materials are scaled down to the nanometer regime, material properties can change because the relative contribution from the surface property to the overall system property increases compared to that from the bulk property. We study scaling effect on material property and device characteristics using a novel device structure -- a PCM cell with a pseudo electrode. With the pseudo electrode PCM cell, we can accurately relate the observed properties to the amorphous region size. We show that threshold switching voltage scales linearly with thickness of the amorphous region and threshold switching field drifts in time after programming. We also show that the drift coefficient for resistance drift stays the same for scaled devices. These property scaling results provide not only estimates for scaled device characteristics but also clues for modeling and understanding mechanisms for threshold switching and drift. To make scaled memory cells in an array form, not only memory device elements but also selection devices need to be scaled. PCM requires relatively large programming current, which makes it challenging to scale down selection devices. We integrate Ge nanowire diodes as selection devices in search for new candidates for high density PCM. Ge nanowire diode provides on/off ratio of ~100 and small contact area of 40 nm in diameter which results in programming current below 200 [mu]A. The processing temperature for Ge nanowire diode is below 400°C, which makes Ge nanowire diode a potential enabler for 3D integration. As memory devices are scaled down, more serious reliability issues arise. We study the reliability of PCM using a novel structure -- micro-thermal stage (MTS). The high-resistance-state (RESET) resistance and threshold switching voltage are important device characteristics for reliable operation of PCM devices. We study the drift behavior of RESET resistance and threshold switching voltage and its temperature dependence using the MTS. Results show that the drift coefficient increases proportionally to annealing temperature until it saturates. The analytical drift model for time-varying annealing temperature that we derive from existing phenomenological drift models agrees well with the measurement results. The analytical drift model can be used to estimate the impact of thermal disturbance (program disturbance) on RESET resistance and threshold switching voltage. Thermal disturbance is a unique disturbance mechanism in PCM which is caused by thermal diffusion from a cell being programmed. The MTS can effectively emulate the short heat pulse, enabling detailed study on thermal disturbance impact on cell characteristics. We show that random thermal disturbance can result in at least 25 and 100 % variations in RESET resistance and threshold switching voltage. The existing model on how to add up the impact of thermal disturbance on crystallization is experimentally verified using the MTS. Based on measurement and modeling results, we propose a new programming scheme to improve stability of PCM with a short-time annealing pulse.

Scalability and Reliability of Phase Change Memory

Author : SangBum Kim
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (752 download)

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Book Synopsis Scalability and Reliability of Phase Change Memory by : SangBum Kim

Download or read book Scalability and Reliability of Phase Change Memory written by SangBum Kim and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Various memory devices are being widely used for a wide range of applications. There has not been any universal memory device so far because each memory device has a unique set of features. Large performance gaps in various dimensions of features between memory devices and a new set of features required by new electronic systems such as portable electronics open up new opportunities for new memory devices to emerge as mainstream memory devices. Besides, the imminent scaling limit for existing mainstream memory devices also motivates development and research of new memory devices which can meet the increasing demand for large memory capacity. Phase change memory (PCM) is one of the most promising emerging memory devices. It has the potential to combine DRAM-like features such as bit alteration, fast read and write, and good endurance and Flash-like features such as non-volatility and a simple structure. PCM is expected to be a highly scalable technology extending beyond scaling limit of existing memory devices. Prototypical PCM chips have been developed and are being tested for targeted memory applications. However, understanding of fundament physics behind PCM operation is still lacking because the key material in PCM devices, the chalcogenide, is relatively new for use in solid state devices. Evaluation and development of PCM technology as successful mainstream memory devices require more study on PCM devices. This thesis focuses on issues relevant to scalability and reliability of PCM which are two of the most important qualities that new emerging memory devices should demonstrate. We first study basic scaling rule based on thermoelectric analysis on the maximum temperature in a PCM cell and show that both isotropic and non-isotropic scaling result in constant programming voltage. The minimum programming voltage is determined by material properties such as electrical resistivity and thermal conductivity regardless of the device size. These results highlight first-order principles governing scaling rules. In the first-order scaling rule analysis, we assume that material properties are constant regardless of its physical size. However, when materials are scaled down to the nanometer regime, material properties can change because the relative contribution from the surface property to the overall system property increases compared to that from the bulk property. We study scaling effect on material property and device characteristics using a novel device structure -- a PCM cell with a pseudo electrode. With the pseudo electrode PCM cell, we can accurately relate the observed properties to the amorphous region size. We show that threshold switching voltage scales linearly with thickness of the amorphous region and threshold switching field drifts in time after programming. We also show that the drift coefficient for resistance drift stays the same for scaled devices. These property scaling results provide not only estimates for scaled device characteristics but also clues for modeling and understanding mechanisms for threshold switching and drift. To make scaled memory cells in an array form, not only memory device elements but also selection devices need to be scaled. PCM requires relatively large programming current, which makes it challenging to scale down selection devices. We integrate Ge nanowire diodes as selection devices in search for new candidates for high density PCM. Ge nanowire diode provides on/off ratio of ~100 and small contact area of 40 nm in diameter which results in programming current below 200 [mu]A. The processing temperature for Ge nanowire diode is below 400°C, which makes Ge nanowire diode a potential enabler for 3D integration. As memory devices are scaled down, more serious reliability issues arise. We study the reliability of PCM using a novel structure -- micro-thermal stage (MTS). The high-resistance-state (RESET) resistance and threshold switching voltage are important device characteristics for reliable operation of PCM devices. We study the drift behavior of RESET resistance and threshold switching voltage and its temperature dependence using the MTS. Results show that the drift coefficient increases proportionally to annealing temperature until it saturates. The analytical drift model for time-varying annealing temperature that we derive from existing phenomenological drift models agrees well with the measurement results. The analytical drift model can be used to estimate the impact of thermal disturbance (program disturbance) on RESET resistance and threshold switching voltage. Thermal disturbance is a unique disturbance mechanism in PCM which is caused by thermal diffusion from a cell being programmed. The MTS can effectively emulate the short heat pulse, enabling detailed study on thermal disturbance impact on cell characteristics. We show that random thermal disturbance can result in at least 25 and 100 % variations in RESET resistance and threshold switching voltage. The existing model on how to add up the impact of thermal disturbance on crystallization is experimentally verified using the MTS. Based on measurement and modeling results, we propose a new programming scheme to improve stability of PCM with a short-time annealing pulse.

A Reliable, Secure Phase-change Memory as a Main Memory

Author : Nak Hee Seong
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (88 download)

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Book Synopsis A Reliable, Secure Phase-change Memory as a Main Memory by : Nak Hee Seong

Download or read book A Reliable, Secure Phase-change Memory as a Main Memory written by Nak Hee Seong and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The main objective of this research is to provide an efficient and reliable method for using multi-level cell (MLC) phase-change memory (PCM) as a main memory. As DRAM scaling approaches the physical limit, alternative memory technologies are being explored for future computing systems. Among them, PCM is the most mature with announced commercial products for NOR flash replacement. Its fast access latency and scalability have led researchers to investigate PCM as a feasible candidate for DRAM replacement. Moreover, the multi-level potential of PCM cells can enhance the scalability by increasing the number of bits stored in a cell. However, the two major challenges for adopting MLC PCM are the limited write endurance cycle and the resistance drift issue. To alleviate the negative impact of the limited write endurance cycle, this thesis first introduces a secure wear-leveling scheme called Security Refresh. In the study, this thesis argues that a PCM design not only has to consider normal wear-out under normal application behavior, most importantly, it must take the worst-case scenario into account with the presence of malicious exploits and a compromised OS to address the durability and security issues simultaneously. Security Refresh can avoid information leak by constantly migrating their physical locations inside the PCM, obfuscating the actual data placement from users and system software. In addition to the secure wear-leveling scheme, this thesis also proposes SAFER, a hardware-efficient multi-bit stuck-at-fault error recovery scheme which can function in conjunction with existing wear-leveling techniques. The limited write endurance leads to wear-out related permanent failures, and furthermore, technology scaling increases the variation in cell lifetime resulting in early failures of many cells. SAFER exploits the key attribute that a failed cell with a stuck-at value is still readable, making it possible to continue to use the failed cell to store data; thereby reducing the hardware overhead for error recovery. Another approach that this thesis proposes to address the lower write endurance is a hybrid phase-change memory architecture that can dynamically classify, detect, and isolate frequent writes from accessing the phase-change memory. This proposed architecture employs a small SRAM-based Isolation Cache with a detection mechanism based on a multi-dimensional Bloom filter and a binary classifier. The techniques are orthogonal to and can be combined with other wear-out management schemes to obtain a synergistic result. Lastly, this thesis quantitatively studies the current art for MLC PCM in dealing with the resistance drift problem and shows that the previous techniques such as scrubbing or error correction schemes are incapable of providing sufficient level of reliability. Then, this thesis proposes tri-level-cell (3LC) PCM and demonstrates that 3LC PCM can be a viable solution to achieve the soft error rate of DRAM and the performance of single-level-cell PCM.

Phase Change Memory

Author : Andrea Redaelli
Publisher : Springer
ISBN 13 : 3319690531
Total Pages : 342 pages
Book Rating : 4.3/5 (196 download)

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Book Synopsis Phase Change Memory by : Andrea Redaelli

Download or read book Phase Change Memory written by Andrea Redaelli and published by Springer. This book was released on 2017-11-18 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the physics of phase change memory devices, starting from basic operation to reliability issues. The book gives a comprehensive overlook of PCM with particular attention to the electrical transport and the phase transition physics between the two states. The book also contains design engineering details on PCM cell architecture, PCM cell arrays (including electrical circuit management), as well as the full spectrum of possible future applications.

Phase Change Memory

Author : Naveen Muralimanohar
Publisher : Springer Nature
ISBN 13 : 3031017358
Total Pages : 122 pages
Book Rating : 4.0/5 (31 download)

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Book Synopsis Phase Change Memory by : Naveen Muralimanohar

Download or read book Phase Change Memory written by Naveen Muralimanohar and published by Springer Nature. This book was released on 2022-05-31 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions to enable PCM for main memories. Finally, the authors explore the impact of such byte-addressable non-volatile memories on future storage and system designs. Table of Contents: Next Generation Memory Technologies / Architecting PCM for Main Memories / Tolerating Slow Writes in PCM / Wear Leveling for Durability / Wear Leveling Under Adversarial Settings / Error Resilience in Phase Change Memories / Storage and System Design With Emerging Non-Volatile Memories

Durable Phase-Change Memory Architectures

Author :
Publisher : Academic Press
ISBN 13 : 0128187557
Total Pages : 148 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Durable Phase-Change Memory Architectures by :

Download or read book Durable Phase-Change Memory Architectures written by and published by Academic Press. This book was released on 2020-02-21 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Computers, Volume 118, the latest volume in this innovative series published since 1960, presents detailed coverage of new advancements in computer hardware, software, theory, design and applications. Chapters in this updated release include Introduction to non-volatile memory technologies, The emerging phase-change memory, Phase-change memory architectures, Inter-line level schemes for handling hard errors in PCMs, Handling hard errors in PCMs by using intra-line level schemes, and Addressing issues with MLC Phase-change Memory. Gives a comprehensive overlook of new memory technologies, including PCM Provides reliability features with an in-depth discussion of physical mechanisms that are currently limiting PCM capabilities Covers the work of well-known authors and researchers in the field Includes volumes that are devoted to single themes or subfields of computer science

Phase Change Memory

Author : Rakesh Gnana David Jeyasingh
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (881 download)

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Book Synopsis Phase Change Memory by : Rakesh Gnana David Jeyasingh

Download or read book Phase Change Memory written by Rakesh Gnana David Jeyasingh and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Phase Change Memory (PCM) is one of the most promising candidates for future non-volatile memory technologies to meet the challenges facing the scaling limits of Flash memory and also address the problem of the increasing performance gap between the main memory and the hard disk. A number of high-capacity PCM chips have been demonstrated recently, showing the potential of PCM to be used in solid-state storage applications. A continued effort is however needed to understand the scalability and switching physics of these materials so as to optimize them for low switching energy, higher speed, and better reliability. The focus of this thesis is two-fold (a) to develop device structures and experimental methodologies to study the physics and scalability of PCM and (b) explore the use of PCM beyond conventional non-volatile memory applications. We have developed an ultrafast characterization methodology to study the unconventional kinetics of phase change process that happens at higher temperatures. We have achieved this by integrating a nano-scale heating element with a vertical PCM device that can be used to precisely control the temperature at the phase change layer over a large temperature range and in very short time scales. We have studied the scalability of PCM devices down to a single-digit nm using solution processed PCM nanoparticles and using carbon nanotubes as the bottom electrode. In addition to the electrode scaling, we have also investigated the thickness scaling of phase change materials using a novel structure called as an Additional Top Electrode (ATE) PCM cell to probe directly in to the trap states that are involved in the electrical conduction process in the amorphous phase. Finally this thesis also explores the use of PCM devices as a nanoscale electronic synapse for neuromorophic applications by exploiting the gradual resistance change nature of PCM devices.

VLSI

Author : Tomasz Wojcicki
Publisher : CRC Press
ISBN 13 : 1466599103
Total Pages : 486 pages
Book Rating : 4.4/5 (665 download)

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Book Synopsis VLSI by : Tomasz Wojcicki

Download or read book VLSI written by Tomasz Wojcicki and published by CRC Press. This book was released on 2017-12-19 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently the world celebrated the 60th anniversary of the invention of the first transistor. The first integrated circuit (IC) was built a decade later, with the first microprocessor designed in the early 1970s. Today, ICs are a part of nearly every aspect of our daily lives. They help us live longer and more comfortably, and do more, faster. All this is possible because of the relentless search for new materials, circuit designs, and ideas happening on a daily basis at industrial and academic institutions around the globe. Showcasing the latest advances in very-large-scale integrated (VLSI) circuits, VLSI: Circuits for Emerging Applications provides a balanced view of industrial and academic developments beyond silicon and complementary metal–oxide–semiconductor (CMOS) technology. From quantum-dot cellular automata (QCA) to chips for cochlear implants, this must-have resource: Investigates the trend of combining multiple cores in a single chip to boost performance of the overall system Describes a novel approach to enable physically unclonable functions (PUFs) using intrinsic features of a VLSI chip Examines the VLSI implementations of major symmetric and asymmetric key cryptographic algorithms, hash functions, and digital signatures Discusses nonvolatile memories such as resistive random-access memory (Re-RAM), magneto-resistive RAM (MRAM), and floating-body RAM (FB-RAM) Explores organic transistors, soft errors, photonics, nanoelectromechanical (NEM) relays, reversible computation, bioinformatics, asynchronous logic, and more VLSI: Circuits for Emerging Applications presents cutting-edge research, design architectures, materials, and uses for VLSI circuits, offering valuable insight into the current state of the art of micro- and nanoelectronics.

Scalability of Phase Change Materials in Non-volatile Memory Devices

Author : Biyun Li Jackson
Publisher :
ISBN 13 :
Total Pages : 190 pages
Book Rating : 4.:/5 (815 download)

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Book Synopsis Scalability of Phase Change Materials in Non-volatile Memory Devices by : Biyun Li Jackson

Download or read book Scalability of Phase Change Materials in Non-volatile Memory Devices written by Biyun Li Jackson and published by . This book was released on 2011 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Phase Change Materials

Author : Simone Raoux
Publisher : Springer Science & Business Media
ISBN 13 : 0387848746
Total Pages : 430 pages
Book Rating : 4.3/5 (878 download)

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Book Synopsis Phase Change Materials by : Simone Raoux

Download or read book Phase Change Materials written by Simone Raoux and published by Springer Science & Business Media. This book was released on 2010-06-10 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Phase Change Materials: Science and Applications" provides a unique introduction of this rapidly developing field. Clearly written and well-structured, this volume describes the material science of these fascinating materials from a theoretical and experimental perspective. Readers will find an in-depth description of their existing and potential applications in optical and solid state storage devices as well as reconfigurable logic applications. Researchers, graduate students and scientists with an interest in this field will find "Phase Change Materials" to be a valuable reference.

Handbook of Energy-Aware and Green Computing - Two Volume Set

Author : Ishfaq Ahmad
Publisher : CRC Press
ISBN 13 : 1482254441
Total Pages : 1284 pages
Book Rating : 4.4/5 (822 download)

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Book Synopsis Handbook of Energy-Aware and Green Computing - Two Volume Set by : Ishfaq Ahmad

Download or read book Handbook of Energy-Aware and Green Computing - Two Volume Set written by Ishfaq Ahmad and published by CRC Press. This book was released on 2016-02-03 with total page 1284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Implementing energy-efficient CPUs and peripherals as well as reducing resource consumption have become emerging trends in computing. As computers increase in speed and power, their energy issues become more and more prevalent. The need to develop and promote environmentally friendly computer technologies and systems has also come to the forefront

A Reliability Prediction Method for Phase-change Devices Using Optimized Pulse Conditions

Author : Martin Jared Barclay
Publisher :
ISBN 13 :
Total Pages : 149 pages
Book Rating : 4.:/5 (898 download)

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Book Synopsis A Reliability Prediction Method for Phase-change Devices Using Optimized Pulse Conditions by : Martin Jared Barclay

Download or read book A Reliability Prediction Method for Phase-change Devices Using Optimized Pulse Conditions written by Martin Jared Barclay and published by . This book was released on 2014 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Owing to the outstanding device characteristics of Phase-Change Random Access Memory (PCRAM) such as high scalability, high speed, good cycling endurance, and compatibility with conventional complementary metal-oxide-semiconductor (CMOS) processes, PCRAM has reached the point of volume production. However, due to the temperature dependent nature of the phase-change memory device material and the high electrical and thermal stresses applied during the programming operation, the standard methods of high-temperature (Temperature > 125 °C) accelerated retention testing may not be able to accurately predict bit sensing failures or determine slight pulse condition changes needed if the device were to be programmed at an elevated temperature several times, in an environment where the ambient temperature is between 25 and 125 °C. In this work a new reliability prediction method, different than standard PCRAM reliability methods is presented. This new method will model and predict a single combination of temperature and pulse conditions for temperatures between 25 and 125 °C, giving the lowest Bit Error Rate (BER). The prediction model was created by monitoring the cell resistance distributions collected from sections of the PCRAM 1Gigabit (Gb) array after applying a given RESET or SET programming pulse shape at a given temperature, in the range of 25 to 125 °C. This model can be used to determine the optimal pulse conditions for a given ambient temperature and predict the BER and/or data retention loss over large arrays of devices on the Micron/Numonyx 45nm PCRAM part."--Boise State University ScholarWorks.

Silicon Non-Volatile Memories

Author : Barbara de Salvo
Publisher : John Wiley & Sons
ISBN 13 : 1118617800
Total Pages : 222 pages
Book Rating : 4.1/5 (186 download)

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Book Synopsis Silicon Non-Volatile Memories by : Barbara de Salvo

Download or read book Silicon Non-Volatile Memories written by Barbara de Salvo and published by John Wiley & Sons. This book was released on 2013-05-10 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor flash memory is an indispensable component of modern electronic systems which has gained a strategic position in recent decades due to the progressive shift from computing to consumer (and particularly mobile) products as revenue drivers for Integrated Circuits (IC) companies. This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on the use of new materials (such as silicon nanocrystals for storage nodes and high-k insulators for active dielectrics) and of new transistor structures (such as multi-gate devices) are investigated in order to extend classical floating gate technology to the 32 nm node. "Disruptive paths" based on new storage mechanisms or new technologies (such as phase-change devices, polymer or molecular cross-bar memories) are also covered in order to address 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.

Dependable Embedded Systems

Author : Jörg Henkel
Publisher : Springer Nature
ISBN 13 : 303052017X
Total Pages : 606 pages
Book Rating : 4.0/5 (35 download)

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Book Synopsis Dependable Embedded Systems by : Jörg Henkel

Download or read book Dependable Embedded Systems written by Jörg Henkel and published by Springer Nature. This book was released on 2020-12-09 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems.

Physics of Semiconductor Devices

Author : Simon M. Sze
Publisher : John Wiley & Sons
ISBN 13 : 1119618002
Total Pages : 944 pages
Book Rating : 4.1/5 (196 download)

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Book Synopsis Physics of Semiconductor Devices by : Simon M. Sze

Download or read book Physics of Semiconductor Devices written by Simon M. Sze and published by John Wiley & Sons. This book was released on 2021-03-19 with total page 944 pages. Available in PDF, EPUB and Kindle. Book excerpt: The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.

Designing Data-Intensive Applications

Author : Martin Kleppmann
Publisher : "O'Reilly Media, Inc."
ISBN 13 : 1491903104
Total Pages : 658 pages
Book Rating : 4.4/5 (919 download)

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Book Synopsis Designing Data-Intensive Applications by : Martin Kleppmann

Download or read book Designing Data-Intensive Applications written by Martin Kleppmann and published by "O'Reilly Media, Inc.". This book was released on 2017-03-16 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt: Data is at the center of many challenges in system design today. Difficult issues need to be figured out, such as scalability, consistency, reliability, efficiency, and maintainability. In addition, we have an overwhelming variety of tools, including relational databases, NoSQL datastores, stream or batch processors, and message brokers. What are the right choices for your application? How do you make sense of all these buzzwords? In this practical and comprehensive guide, author Martin Kleppmann helps you navigate this diverse landscape by examining the pros and cons of various technologies for processing and storing data. Software keeps changing, but the fundamental principles remain the same. With this book, software engineers and architects will learn how to apply those ideas in practice, and how to make full use of data in modern applications. Peer under the hood of the systems you already use, and learn how to use and operate them more effectively Make informed decisions by identifying the strengths and weaknesses of different tools Navigate the trade-offs around consistency, scalability, fault tolerance, and complexity Understand the distributed systems research upon which modern databases are built Peek behind the scenes of major online services, and learn from their architectures

Smart Sensors and Systems

Author : Chong-Min Kyung
Publisher : Springer
ISBN 13 : 3319332015
Total Pages : 517 pages
Book Rating : 4.3/5 (193 download)

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Book Synopsis Smart Sensors and Systems by : Chong-Min Kyung

Download or read book Smart Sensors and Systems written by Chong-Min Kyung and published by Springer. This book was released on 2016-10-16 with total page 517 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the technology used for effective sensing of our physical world and intelligent processing techniques for sensed information, which are essential to the success of Internet of Things (IoT). The authors provide a multidisciplinary view of sensor technology from materials, process, circuits, and big data domains and showcase smart sensor systems in real applications including smart home, transportation, medical, environmental, agricultural, etc. Unlike earlier books on sensors, this book provides a “global” view on smart sensors covering abstraction levels from device, circuit, systems, and algorithms.