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Radiation And Strain Effects In Silicon Germanium Bipolar Complementary Metal Oxide Semiconductor Technology
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Book Synopsis Radiation and Strain Effects in Silicon-germanium Bipolar Complementary Metal Oxide Semiconductor Technology by : Becca Mary Haugerud
Download or read book Radiation and Strain Effects in Silicon-germanium Bipolar Complementary Metal Oxide Semiconductor Technology written by Becca Mary Haugerud and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This work examines the effects of radiation and strain on silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. First, aspects of the various SiGe HBT BiCMOS technologies and the device physics of the SiGe HBT are discussed. The performance advantages of the SiGe HBT over the Si BJT are also presented. Chapter II offers a basic introduction to key radiation concepts. The space radiation environment as well as the two common radiation damage mechanisms are described. An overview of the effects of radiation damage on Si-based semiconductor devices, namely bipolar and CMOS, is also presented. Next, the effects of proton and gamma radiation on a new first-generation SiGe HBT technology are investigated. The results of a differential SiGe HBT LC oscillator subjected to proton irradiation are also presented as a test of circuit-level radiation tolerance. Finally, a technology comparison is made between the results of this work and the three different previously reported SiGe technologies. All reported SiGe HBT technologies to date show acceptable proton radiation tolerance up to Mrad levels. Chapter IV investigates the effects of effects of mechanical planar biaxial strain in SiGe HBT BiCMOS technology. This novel strain method is applied post fabrication, unlike many other straining methods. We report increases in the nFET saturated drain current, transconductance, and effective mobility for an applied strain of 0.123%. The pFET device performance degrades for this type of low-level strain.
Book Synopsis Applied Mechanical Tensile Strain Effects on Silicon Bipolar and Silicon-germanium Heterojunction Bipolar Devices by : Mustayeen B. Nayeem
Download or read book Applied Mechanical Tensile Strain Effects on Silicon Bipolar and Silicon-germanium Heterojunction Bipolar Devices written by Mustayeen B. Nayeem and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This work investigates the effects of post-fabrication applied mechanical tensile strain on Silicon (Si) Bipolar Junction Transistor (BJT) and Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) devices. Applied strain effects on MOSFET transistors are being heavily explored, both in academia and industry, as a possible alternative to dimensional scaling. This thesis focuses on how strain affects Si BJT and SiGe HBTs, where tensile strain is applied after the Integrated Circuit (IC) fabrication has been completed, using a unique mechanical method. The consequence of both biaxial and uniaxial strain application has been examined in this work. Chapter I gives a short introduction to the scope of this work, the motivation for conducting this research and the contributions of this experiment. Chapter II entails a brief discussion on Si bipolar and SiGe heterojunction bipolar device physics, which are key to the understanding of strain induced effects. Chapter III provides a thorough summary of the current state of research regarding applied strain, also known as Strain Engineering. It covers different types, orientations, and application techniques of strain. Chapter IV, highlights the details of this experiment, and also presents the measured results. It is observed that for this particular method of biaxial tensile strain application, the collector current (IC) and current gain degrades for both Si BJT and SiGe HBT. Base current (IB) decreases in Si BJT, though it increases for SiGe HBT after strain. Little or no change is noticed in the dynamic or ac small-signal characteristics like unity-gain cutoff frequency (fT) and base resistance (rBB) after strain. Uniaxially strained SiGe HBT samples showed similar results as the biaxial strain. This chapter also attempts to explain the origin of these strain induced changes. Chapter V, summarizes the finding of this experiment, and concludes the thesis with some future directions for this research.
Book Synopsis Research on the Radiation Effects and Compact Model of SiGe HBT by : Yabin Sun
Download or read book Research on the Radiation Effects and Compact Model of SiGe HBT written by Yabin Sun and published by Springer. This book was released on 2017-10-24 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
Book Synopsis Radiation Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology by : Ramkumar Krithivasan
Download or read book Radiation Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology written by Ramkumar Krithivasan and published by . This book was released on 2002 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1966 with total page 1492 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Displacement Damage and Ionization Effects in Advanced Silicon-germanium Heterojunction Bipolar Transistors by : Akil K. Sutton
Download or read book Displacement Damage and Ionization Effects in Advanced Silicon-germanium Heterojunction Bipolar Transistors written by Akil K. Sutton and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A summary of total dose effects observe in advanced Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) is presented in this work. The principal driving froces behind the increased use of SiGe BiCMOS technology in space based electronics systems are outlined in the motivation Section of Chapter I. This is followed by a discussion of the strained layer Si/SiGe material structure and relevant fabrication techniques used in the development of the first generation of this technology. A comprehensive description of the device performance is presented. Chapter II presents an overview of radiation physics as it applies to microelectronic devices. Several sources of radiation are discussed including the environments encountered by satellites in different orbital paths around the earth. The particle types, interaction mechanisms and damage nomenclature are described. Proton irradiation experiments to analyze worst case displacement and ionization damage are examined in chapter III. A description of the test conditions is first presented, followed by the experimental results on the observed dc and ac transistor performance metrics with incident radiation. The impact of the collector doping level on the degradation is discussed. In a similar fashion, gamma irradiation experiments to focus on ionization only effects are presented in chapter IV. The experimental design and dc results are first presented, followed by a comparison of degradation under proton irradiation. Additional proton dose rate experiments conducted to further investigate observed differences between proton and gamma results are presented.
Book Synopsis Germanium-silicon Strained Layers and Heterostructures by : Suresh C. Jain
Download or read book Germanium-silicon Strained Layers and Heterostructures written by Suresh C. Jain and published by . This book was released on 1994 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.
Book Synopsis Geometrical Scaling and Radiation Effects in Silicon-germanium Heterojunction Bipolar Transistors by : Shiming Zhang
Download or read book Geometrical Scaling and Radiation Effects in Silicon-germanium Heterojunction Bipolar Transistors written by Shiming Zhang and published by . This book was released on 2002 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Study of Low-temperature Effects in Silicon-germanium Heterojunction Bipolar Transistor Technology by : Adnan Ahmed
Download or read book Study of Low-temperature Effects in Silicon-germanium Heterojunction Bipolar Transistor Technology written by Adnan Ahmed and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis investigates the effects of low temperatures on Silicon Germanium (SiGe) Hterojunction Bipolar Transistors (HBT) BiCMOS technology. A comprehensive set of dc measurements were taken on first, second, third and fourth generation IBM SiGe technology over a range of temperatures (room temperature to 43K for first generation, and room temperature to 15K for the rest). This work is unique in the sense that this sort of comprehensive study of dc characteristics on four SiGe HBT technology generations over a wide range of temperatures has never been done before to the best of the author's knowledge.
Book Synopsis Hardness Assurance Testing and Radiation Hardening by Design Techniques for Silicon-germanium Heterojunction Bipolar Transistors and Digital Logic Circuits by : Akil Khamisi Sutton
Download or read book Hardness Assurance Testing and Radiation Hardening by Design Techniques for Silicon-germanium Heterojunction Bipolar Transistors and Digital Logic Circuits written by Akil Khamisi Sutton and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrocarbon exploration, global navigation satellite systems, computed tomography, and aircraft avionics are just a few examples of applications that require system operation at an ambient temperature, pressure, or radiation level outside the range covered by military specifications. The electronics employed in these applications are known as "extreme environment electronics." On account of the increased cost resulting from both process modifications and the use of exotic substrate materials, only a handful of semiconductor foundries have specialized in the production of extreme environment electronics. Protection of these electronic systems in an extreme environment may be attained by encapsulating sensitive circuits in a controlled environment, which provides isolation from the hostile ambient, often at a significant cost and performance penalty. In a significant departure from this traditional approach, system designers have begun to use commercial off-the-shelf technology platforms with built in mitigation techniques for extreme environment applications. Such an approach simultaneously leverages the state of the art in technology performance with significant savings in project cost. Silicon-germanium is one such commercial technology platform that demonstrates potential for deployment into extreme environment applications as a result of its excellent performance at cryogenic temperatures, remarkable tolerance to radiation-induced degradation, and monolithic integration with silicon-based manufacturing. In this dissertation the radiation response of silicon-germanium technology is investigated, and novel transistor-level layout-based techniques are implemented to improve the radiation tolerance of HBT digital logic.
Book Synopsis Single Event Effects and Radiation Hardening Methodologies in SiGe HBTs for Extreme Environment Applications by : Stanley David Phillips
Download or read book Single Event Effects and Radiation Hardening Methodologies in SiGe HBTs for Extreme Environment Applications written by Stanley David Phillips and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Field-effect transistor technologies have been critical building blocks for satellite systems since their introduction into the microelectronics industry. The extremely high cost of launching payloads into orbit necessitates systems to have small form factor, ultra low-power consumption, and reliable lifetime operation, while satisfying the performance requirements of a given application. Silicon-based complementary metal-oxide-semiconductors (Si CMOS) have traditionally been able to adequately meet these demands when coupled with radiation hardening techniques that have been developed over years of invested research. However, as customer demands increase, pushing the limits of system throughput, noise, and speed, alternative technologies must be employed. Silicon-germanium BiCMOS platforms have been identfied as a technology candidate for meeting the performance criteria of these pioneering satellite systems and deep space applications, contingent on their ability to be hardened to radiation-induced damage. Given that SiGe technology is a relative new- comer to terrestrial and extra-terrestrial applications in radiation-rich environments, the same wealth of knowledge of time-tested radiation hardening methodologies has not been established as it has for Si CMOS. Although SiGe BiCMOS technology has been experimentally proven to be inherently tolerant to total-ionizing dose damage mechanism, the single event susceptibility of this technology remains a primary concern. The objective of this research is to characterize the physical mechanisms that drive the origination of ion-induced transient terminal currents in SiGe HBTs that subsequently lead to a wide range of possible single event phenomena. Building upon this learning, a variety of device-level hardening methodologies are explored and tested for efficacy.
Book Synopsis Modeling of Total Ionizing Dose Effects in Advanced Complementary Metal-oxide-semiconductor Technologies by : Ivan Sanchez Esqueda
Download or read book Modeling of Total Ionizing Dose Effects in Advanced Complementary Metal-oxide-semiconductor Technologies written by Ivan Sanchez Esqueda and published by . This book was released on 2011 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated in advanced CMOS technologies requires understanding and analyzing the basic mechanisms that result in buildup of radiation-induced defects in specific sensitive regions. Extensive experimental studies have demonstrated that the sensitive regions are shallow trench isolation (STI) oxides. Nevertheless, very little work has been done to model the physical mechanisms that result in the buildup of radiation-induced defects and the radiation response of devices fabricated in these technologies. A comprehensive study of the physical mechanisms contributing to the buildup of radiation-induced oxide trapped charges and the generation of interface traps in advanced CMOS devices is presented in this dissertation. The basic mechanisms contributing to the buildup of radiation-induced defects are explored using a physical model that utilizes kinetic equations that captures total ionizing dose (TID) and dose rate effects in silicon dioxide (SiO2). These mechanisms are formulated into analytical models that calculate oxide trapped charge density (Not) and interface trap density (Nit) in sensitive regions of deep-submicron devices. Experiments performed on field-oxide-field-effect-transistors (FOXFETs) and metal-oxide-semiconductor (MOS) capacitors permit investigating TID effects and provide a comparison for the radiation response of advanced CMOS devices. When used in conjunction with closed-form expressions for surface potential, the analytical models enable an accurate description of radiation-induced degradation of transistor electrical characteristics. In this dissertation, the incorporation of TID effects in advanced CMOS devices into surface potential based compact models is also presented. The incorporation of TID effects into surface potential based compact models is accomplished through modifications of the corresponding surface potential equations (SPE), allowing the inclusion of radiation-induced defects (i.e., Not and Nit) into the calculations of surface potential. Verification of the compact modeling approach is achieved via comparison with experimental data obtained from FOXFETs fabricated in a 90 nm low-standby power commercial bulk CMOS technology and numerical simulations of fully-depleted (FD) silicon-on-insulator (SOI) n-channel transistors.
Book Synopsis Impact of Mechanical Stress on Silicon and Germanium Metal-oxide-semiconductor Devices by : Youn Sung Choi
Download or read book Impact of Mechanical Stress on Silicon and Germanium Metal-oxide-semiconductor Devices written by Youn Sung Choi and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Strain effects on trap-assisted gate tunneling mechanism, including trap-assisted tunneling and Poole-Frenkel emission, are also investigated from both SiO2 and nitrided hafnium silicate (HfSiON) gate dielectric Si MOS capacitors. A decrease in electron and/or hole trap activation energy results in an increase in trap-assisted gate tunneling current with both [110] tensile and compressive stresses. The dielectric constant of HfSiON also increases with mechanical stress, resulting from strain-induced N p band splitting, which reduces band gap of HfSiON.
Book Synopsis Advanced Germanium Complementary-metal-oxide-semiconductor Technologies by : Chi On Chui
Download or read book Advanced Germanium Complementary-metal-oxide-semiconductor Technologies written by Chi On Chui and published by . This book was released on 2004 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ionizing Radiation Effects in Silicon-germanium BiCMOS Technology by : Gaurab Banerjee
Download or read book Ionizing Radiation Effects in Silicon-germanium BiCMOS Technology written by Gaurab Banerjee and published by . This book was released on 1999 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1990 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:
