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Quenching Of Porous Silicon Photoluminescence By Aromatic Molecules And Surface Derivatization Of Porous Silicon With Dimethyl Sulfoxide Aryllithium Or Alkyllithium Reagents
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Book Synopsis Quenching of Porous Silicon Photoluminescence by Aromatic Molecules, and Surface Derivatization of Porous Silicon with Dimethyl Sulfoxide, Aryllithium, Or Alkyllithium Reagents by : Song Jae Hee
Download or read book Quenching of Porous Silicon Photoluminescence by Aromatic Molecules, and Surface Derivatization of Porous Silicon with Dimethyl Sulfoxide, Aryllithium, Or Alkyllithium Reagents written by Song Jae Hee and published by . This book was released on 1998 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Quenching of Porous Silicon Photoluminescence by Aromatic Molecules, and Surface Derivatization of Porous Silicon with Dimethyl Sulfoxid, Aryllithium, Or Alkyllithium Reagents by : Jae Hee Song
Download or read book Quenching of Porous Silicon Photoluminescence by Aromatic Molecules, and Surface Derivatization of Porous Silicon with Dimethyl Sulfoxid, Aryllithium, Or Alkyllithium Reagents written by Jae Hee Song and published by . This book was released on 1998 with total page 169 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1998 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1997 with total page 806 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Interactions with Photoluminescent Porous Silicon and the Effects of Chemical Modifications of the Silicon Surface by : Julie L. Heinrich
Download or read book Molecular Interactions with Photoluminescent Porous Silicon and the Effects of Chemical Modifications of the Silicon Surface written by Julie L. Heinrich and published by . This book was released on 1996 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Quenching of Porous Silicon Photoluminescence by O2, NO, and NO2 by : Jessica Harper
Download or read book Quenching of Porous Silicon Photoluminescence by O2, NO, and NO2 written by Jessica Harper and published by . This book was released on 1996 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Quenching of Porous Silicon Photoluminescence by Deposition of Metal Adsorbates by : David Kent Andsager
Download or read book Quenching of Porous Silicon Photoluminescence by Deposition of Metal Adsorbates written by David Kent Andsager and published by . This book was released on 1994 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: Luminescent porous silicon is formed by anodization of silicon in HF acid in the dark and then under UV illumination. When illuminated with UV, samples exhibit a bright orange photoluminescence with a quantum efficiency of order a few percent. Porous silicon is characterized as a very complex network of interconnecting pores which range in size from 1 nm to 100 nm. It has a surface area of order 500 m$sp2$/cm$sp3$. The mechanism responsible for efficient luminescence of porous silicon is unknown, although there is a growing consensus that quantum confinement is necessary element to any successful explanation. We have attempted to increase understanding in porous silicon by a series of experiments in which luminescence is quenched. We have performed experiments in which the luminescence was quenched by immersion in metal ion solutions. In these experiments, we found that those ions solutions which caused quenching required a metal cation with a positive standard reduction potential. In this case, the metal ion was electrochemically deposited onto the surface of the porous silicon. Numerous Auger electron spectroscopy measurements indicate that the metal is present in the porous silicon at significant concentrations ($sim$5-15%) for those samples in which the porous silicon was removed from solution as soon as the photoluminescence had been quenched as observed by eye. SEM measurements show no significant topographic differences between luminescent and quenched porous silicon samples. We have performed experiments in which metals were evaporated onto the surface of porous silicon. We have found for experiments involving evaporation of metal onto the surface of luminescent porous silicon that only copper metal evaporated onto p-type porous silicon has caused quenching of photoluminescence. Copper was evaporated onto p- and n-type porous silicon, but only copper evaporated onto p-type porous silicon caused quenching of the photoluminescence. Significant diffusion was noted only for copper evaporated onto p-type porous silicon; thus, the presence of copper in porous silicon appears sufficient to quench photoluminescence in porous silicon.
Book Synopsis Analysis of Photoluminescence and Pore Morphology of Porous Silicon by : Darlene Schwall
Download or read book Analysis of Photoluminescence and Pore Morphology of Porous Silicon written by Darlene Schwall and published by . This book was released on 1996 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemically-Induced Shifts in the Photoluminescence Spectra of Porous Silicon by : K.-H. Li
Download or read book Chemically-Induced Shifts in the Photoluminescence Spectra of Porous Silicon written by K.-H. Li and published by . This book was released on 1992 with total page 2 pages. Available in PDF, EPUB and Kindle. Book excerpt: The realization of practical, Si-based light-emitting devices would have a significant impact on numerous key technologies such as optoelectronic integrated circuits, optical interconnects, optical memories and logic, and advanced display systems. Previously, Si has exhibited extremely weak emission owing to its indirect bandgap. Recently, however, observations of efficient room-temperature, visible photoluminescence (PL) from porous silicon, have stimulated research and extensive debate on the physical mechanisms responsible for this luminescence. To date, the explanations that have been proffered include (1) quantum size effects in highly porous Si, (2) the formation of wide-bandgap material such as a-Si:Hx 41 or SILOXENE 5 during anodization, and (3) a local increase in the bandgap energy due to the presence of dihydride species on the surface. Previously, we have utilized photoluminescence (PL) and transmission Fourier-transform infrared (FTIR) spectroscopy to demonstrate that hydrogen desorption from the dihydride surface species on porous Si is correlated to a decrease in the emission intensity. In this paper, we show that changes in the surface chemistry achieved by changing the composition of the electrolyte-in which the anodized wafer is immersed result in large shifts in the PL spectra Using this approach we have repeatedly cycled the emission between red and green. These results are inconsistent with a quantum-confinement interpretation for the emission process.
Book Synopsis Photoluminescence and Raman Studies of Porous Silicon by : Adam A. Filios
Download or read book Photoluminescence and Raman Studies of Porous Silicon written by Adam A. Filios and published by . This book was released on 1994 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: In this work we investigate the photoluminescence and Raman spectra of porous silicon samples, trying to establish evidence for the mechanism of the luminescence. Although the quantum confinement model seems to correlate well with most of the experimental data presented here, this can not be said for all the samples tested. In particular, it was found that samples etched in the darkness are more consistent with the quantum confinement model, while samples etched with light assistance are more consistent with luminescence from surface species.
Book Synopsis The Instrumentation for and a Qualitative Study of the Intensity Dependence of the Photoluminescence Lifetime of Porous Silicon by : Stephen Andrew Pridmore
Download or read book The Instrumentation for and a Qualitative Study of the Intensity Dependence of the Photoluminescence Lifetime of Porous Silicon written by Stephen Andrew Pridmore and published by . This book was released on 2000 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: A survey of recent interest in and time-resolved photoluminescence studies on porous silicon is given and the instrumentation with which time-resolved photoluminescence measurements are acquired is presented. A study of the intensity dependence of the radiative lifetime of porous silicon is performed and a model for the luminescence of the material is formulated and evidence of a molecular luminescence mechanism is presented. It is deduced that a complex energy transfer process between molecules on the surface of porous silicon is responsible for the luminescence that is exhibited by this material.
Book Synopsis Growth and Luminescence of Porous Silicon by :
Download or read book Growth and Luminescence of Porous Silicon written by and published by . This book was released on 1997 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: The authors have shown in their previous studies that applications of x-ray scattering techniques in a transmission geometry open an avenue for in situ structural investigation of silicon/solution, in general, semiconductor/solution interfaces. In these studies, the surface morphological evolution was deduced from x-ray reflectivity measurements and the pore-pore pair-distribution function was obtained from diffuse scattering measurements. The combination of these two techniques provided a complete phenomenological description of the pore formation and growth based on the most fundamental Langevin equation of interface-evolution phenomena, known as Edward-Wilkinson model. In essence, the high-current-density condition, where the surface etching occurs via surface oxidation of silicon and dissolution of the surface oxide, inhibits short-wave length fluctuations and the low-current-density condition, where the surface etching occurs via direct dissolution of H2SiF6 formed at the interface, amplifies fluctuations with length scales of space-charge width. These two conditions are found to be consistent with the sign inversion of coefficient for the curvature dependent term of the Langevin equation. In this study extending the previous studies, the authors will show that the luminescence and the two conditions under which the porous silicon (PS) produced are directly related, based on x-ray and photoluminescence (PL) measurements.
Book Synopsis Photoluminescence of porous silicon by : Kun-hsi Li
Download or read book Photoluminescence of porous silicon written by Kun-hsi Li and published by . This book was released on 1991 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Processing and Characterization of Porous Silicon Films by : Peter S. Williams
Download or read book Processing and Characterization of Porous Silicon Films written by Peter S. Williams and published by . This book was released on 1993 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Optical Characterization and Photoluminescence Study of Porous Silicon by : Patrick Duane Stevens
Download or read book Optical Characterization and Photoluminescence Study of Porous Silicon written by Patrick Duane Stevens and published by . This book was released on 1995 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Photoluminescence Study of Porous Silicon by : Wan Hua Zheng
Download or read book Photoluminescence Study of Porous Silicon written by Wan Hua Zheng and published by . This book was released on 1998 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Structure and Photoluminescence of Porous Silicon by : Kim Leong Chin
Download or read book The Structure and Photoluminescence of Porous Silicon written by Kim Leong Chin and published by . This book was released on 1998 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: