C,H,N and O in Si and Characterization and Simulation of Materials and Processes

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Publisher : North Holland
ISBN 13 :
Total Pages : 624 pages
Book Rating : 4.0/5 ( download)

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Book Synopsis C,H,N and O in Si and Characterization and Simulation of Materials and Processes by : A. Borghesi

Download or read book C,H,N and O in Si and Characterization and Simulation of Materials and Processes written by A. Borghesi and published by North Holland. This book was released on 1996 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry.The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.

Dissertation Abstracts International

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Publisher :
ISBN 13 :
Total Pages : 752 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Dissertation Abstracts International by :

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2000 with total page 752 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Physics Briefs

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Publisher :
ISBN 13 :
Total Pages : 1248 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Chemical Abstracts

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Publisher :
ISBN 13 :
Total Pages : 1668 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Chemical Abstracts by :

Download or read book Chemical Abstracts written by and published by . This book was released on 1994-03-07 with total page 1668 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Properties of Crystalline Silicon

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Publisher : IET
ISBN 13 : 9780852969335
Total Pages : 1054 pages
Book Rating : 4.9/5 (693 download)

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Book Synopsis Properties of Crystalline Silicon by : Robert Hull

Download or read book Properties of Crystalline Silicon written by Robert Hull and published by IET. This book was released on 1999 with total page 1054 pages. Available in PDF, EPUB and Kindle. Book excerpt: A unique and well-organized reference, this book provides illuminating data, distinctive insight and expert guidance on silicon properties.

National Science Council Review

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Publisher :
ISBN 13 :
Total Pages : 1196 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis National Science Council Review by :

Download or read book National Science Council Review written by and published by . This book was released on 1997 with total page 1196 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Engineering Index Annual

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Publisher :
ISBN 13 :
Total Pages : 2264 pages
Book Rating : 4.:/5 (319 download)

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Book Synopsis The Engineering Index Annual by :

Download or read book The Engineering Index Annual written by and published by . This book was released on 1992 with total page 2264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.

Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

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Publisher : Springer Nature
ISBN 13 : 9811500460
Total Pages : 127 pages
Book Rating : 4.8/5 (115 download)

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Book Synopsis Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond by : Guilei Wang

Download or read book Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond written by Guilei Wang and published by Springer Nature. This book was released on 2019-09-20 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.

Ultra-thin Chip Technology and Applications

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Publisher : Springer Science & Business Media
ISBN 13 : 1441972765
Total Pages : 471 pages
Book Rating : 4.4/5 (419 download)

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Book Synopsis Ultra-thin Chip Technology and Applications by : Joachim Burghartz

Download or read book Ultra-thin Chip Technology and Applications written by Joachim Burghartz and published by Springer Science & Business Media. This book was released on 2010-11-18 with total page 471 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultra-thin chips are the "smart skin" of a conventional silicon chip. This book shows how very thin and flexible chips can be fabricated and used in many new applications in microelectronics, Microsystems, biomedical and other fields. It provides a comprehensive reference to the fabrication technology, post processing, characterization and the applications of ultra-thin chips.

The Physics of Semiconductors

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Publisher : Springer Nature
ISBN 13 : 3030515699
Total Pages : 905 pages
Book Rating : 4.0/5 (35 download)

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Book Synopsis The Physics of Semiconductors by : Marius Grundmann

Download or read book The Physics of Semiconductors written by Marius Grundmann and published by Springer Nature. This book was released on 2021-03-06 with total page 905 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 4th edition of this highly successful textbook features copious material for a complete upper-level undergraduate or graduate course, guiding readers to the point where they can choose a specialized topic and begin supervised research. The textbook provides an integrated approach beginning from the essential principles of solid-state and semiconductor physics to their use in various classic and modern semiconductor devices for applications in electronics and photonics. The text highlights many practical aspects of semiconductors: alloys, strain, heterostructures, nanostructures, amorphous semiconductors, and noise, which are essential aspects of modern semiconductor research but often omitted in other textbooks. This textbook also covers advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, and transparent conductive oxides. The 4th edition includes many updates and chapters on 2D materials and aspects of topology. The text derives explicit formulas for many results to facilitate a better understanding of the topics. Having evolved from a highly regarded two-semester course on the topic, The Physics of Semiconductors requires little or no prior knowledge of solid-state physics. More than 2100 references guide the reader to historic and current literature including original papers, review articles and topical books, providing a go-to point of reference for experienced researchers as well.

Electrical & Electronics Abstracts

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Publisher :
ISBN 13 :
Total Pages : 2240 pages
Book Rating : 4.3/5 (243 download)

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Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

NSC Review

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Publisher :
ISBN 13 :
Total Pages : 556 pages
Book Rating : 4.6/5 (247 download)

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Book Synopsis NSC Review by :

Download or read book NSC Review written by and published by . This book was released on 1997 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Self-Assembled Quantum Dots

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Publisher : Springer Science & Business Media
ISBN 13 : 0387741917
Total Pages : 470 pages
Book Rating : 4.3/5 (877 download)

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Book Synopsis Self-Assembled Quantum Dots by : Zhiming M Wang

Download or read book Self-Assembled Quantum Dots written by Zhiming M Wang and published by Springer Science & Business Media. This book was released on 2007-11-29 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: This multidisciplinary book provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Coverage also includes current device applications such as quantum dot lasers and detectors, as well as future applications to quantum information processing. The book will serve as a reference for anyone working with or planning to work with quantum dots.

Integration of Functional Oxides with Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 146149320X
Total Pages : 284 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Integration of Functional Oxides with Semiconductors by : Alexander A. Demkov

Download or read book Integration of Functional Oxides with Semiconductors written by Alexander A. Demkov and published by Springer Science & Business Media. This book was released on 2014-02-20 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.

Theory of Defects in Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 :
Total Pages : 320 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Theory of Defects in Semiconductors by : David A. Drabold

Download or read book Theory of Defects in Semiconductors written by David A. Drabold and published by Springer Science & Business Media. This book was released on 2007 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. Today's state-of-the-art, as well as tomorrow’s tools, are discussed: the supercell-pseudopotential method, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments, etc. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.

Defects in Semiconductors

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Publisher : Academic Press
ISBN 13 : 0128019409
Total Pages : 458 pages
Book Rating : 4.1/5 (28 download)

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Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors

Bell Laboratories Talks and Papers

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Publisher :
ISBN 13 :
Total Pages : 582 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Bell Laboratories Talks and Papers by : Bell Telephone Laboratories. Libraries and Information Systems Center

Download or read book Bell Laboratories Talks and Papers written by Bell Telephone Laboratories. Libraries and Information Systems Center and published by . This book was released on 1981 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: