High Purity Silicon 9

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Publisher : The Electrochemical Society
ISBN 13 : 1566775043
Total Pages : 504 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis High Purity Silicon 9 by : Cor L. Claeys

Download or read book High Purity Silicon 9 written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 2006 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue discusses the latest developments in the growth, characterization, device processing and applications of high-purity silicon in either bulk or epitaxial form. Information is given on the control and prevention of impurity incorporation, characterization and detection of defects and impurity states. Device and circuit aspects are also covered. Advanced substrates such as SOI, strained Si and germanium-on-insulator are discussed.

High Purity Silicon 11

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Publisher : The Electrochemical Society
ISBN 13 : 1566778301
Total Pages : 262 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis High Purity Silicon 11 by : E. Simoen

Download or read book High Purity Silicon 11 written by E. Simoen and published by The Electrochemical Society. This book was released on 2010-10 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers included in this issue of ECS Transactions were originally presented in the symposium ¿High Purity Silicon 11¿, held during the 218th meeting of The Electrochemical Society, in Las Vegas, Nevada from October 10 to 15, 2010.

Hydrogen in Semiconductors II

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Publisher : Academic Press
ISBN 13 : 0080525253
Total Pages : 541 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Hydrogen in Semiconductors II by :

Download or read book Hydrogen in Semiconductors II written by and published by Academic Press. This book was released on 1999-05-05 with total page 541 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. - Provides the most in-depth coverage of hydrogen in silicon available in a single source - Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors - Combines both experimental and theoretical studies to form a comprehensive reference

Hydrogen in Semiconductors

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Publisher : Academic Press
ISBN 13 : 0080864317
Total Pages : 655 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis Hydrogen in Semiconductors by : Jacques I. Pankove

Download or read book Hydrogen in Semiconductors written by Jacques I. Pankove and published by Academic Press. This book was released on 1991-04-23 with total page 655 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference

Power Microelectronics: Device And Process Technologies (Second Edition)

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Publisher : World Scientific
ISBN 13 : 981320026X
Total Pages : 608 pages
Book Rating : 4.8/5 (132 download)

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Book Synopsis Power Microelectronics: Device And Process Technologies (Second Edition) by : Yung Chii Liang

Download or read book Power Microelectronics: Device And Process Technologies (Second Edition) written by Yung Chii Liang and published by World Scientific. This book was released on 2017-03-14 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: 'This is an excellent reference book for graduates or undergraduates studying semiconductor technology, or for working professionals who need a reference for detailed theory and working knowledge of processes in the field of power semiconductor devices.'IEEE Electrical Insulation MagazineThis descriptive textbook provides a clear look at the theories and process technologies necessary for understanding the modern power semiconductor devices, i.e. from the fundamentals of p-n junction electrostatics, unipolar MOSFET and superjunction structures, bipolar IGBT, to the most recent wide bandgap SiC and GaN devices. It also covers their associated semiconductor process technologies. Real examples based on actual fabricated devices, with the process steps described in clear detail are especially useful. This book is suitable for university courses on power semiconductor or power electronic devices. Device designers and researchers will also find this book a good reference in their work, especially for those focusing on the advanced device development and design aspects.

Nuclear Science Abstracts

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Publisher :
ISBN 13 :
Total Pages : 764 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1975 with total page 764 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Energy Research Abstracts

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Publisher :
ISBN 13 :
Total Pages : 824 pages
Book Rating : 4.:/5 (3 download)

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Download or read book Energy Research Abstracts written by and published by . This book was released on 1992 with total page 824 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Radiation Defect Engineering

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Publisher : World Scientific
ISBN 13 : 9812565213
Total Pages : 264 pages
Book Rating : 4.8/5 (125 download)

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Book Synopsis Radiation Defect Engineering by : Kozlovski Vitali

Download or read book Radiation Defect Engineering written by Kozlovski Vitali and published by World Scientific. This book was released on 2005 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.

Scientific and Technical Aerospace Reports

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Publisher :
ISBN 13 :
Total Pages : 1368 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1983 with total page 1368 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductors

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Publisher :
ISBN 13 :
Total Pages : 526 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Semiconductors by :

Download or read book Semiconductors written by and published by . This book was released on 2000 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Low Energy Particle Accelerator-Based Technologies and Their Applications

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Publisher : CRC Press
ISBN 13 : 1000599353
Total Pages : 391 pages
Book Rating : 4.0/5 (5 download)

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Book Synopsis Low Energy Particle Accelerator-Based Technologies and Their Applications by : Vlado Valković

Download or read book Low Energy Particle Accelerator-Based Technologies and Their Applications written by Vlado Valković and published by CRC Press. This book was released on 2022-06-22 with total page 391 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low Energy Particle Accelerator-Based Technologies and Their Applications describes types of low energy accelerators, presents some of the main manufacturers, illustrates some of the accelerator laboratories around the globe and shows examples of successful transfers of accelerators to needed laboratories. Key Features: Presents new trends and the state of the art in a field that's growing Provides an overview of numerous applications of such accelerators in medicine, industry, earth sciences, nuclear non-proliferation and oil Fills a gap, with the author drawing on his own experiences with transporting such relatively large machines from one lab to the other that require a tremendous amount of planning, technical and engineering efforts This is an essential reference for advanced students as well as for physicists, engineers and practitioners in accelerator science. About the Author Dr. Vladivoj (Vlado) Valković, a retired professor of physics, is a fellow of the American Physical Society and Institute of Physics (London). He has authored 22 books (from Trace Elements, Taylor & Francis, 1975, to Radioactivity in the Environment, Elsevier, 1st Edition 2001, 2nd Edition 2019), and more than 400 scientific and technical papers in the research areas of nuclear physics, applications of nuclear techniques to trace element analysis in biology, medicine and environmental research. He has lifelong experience in the study of nuclear reactions induced by 14 MeV neutrons. This research has been done through coordination and works on many national and international projects, including US-Croatia bilateral, NATO, IAEA, EU-FP5, FP6 and FP7 projects. Cover photo credit: 3SDH 1 MV Pelletron system with RF source and analysis endstation designed with the intended purpose of aiding in fusion research. It is capable of Ion Beam Analysis (IBA) techniques such as RBS, ERD, PIXE and NRA. Further detectors could be added to the endstation to allow for other techniques. Installed in Japan in 2014. Courtesy of National Electrostatics Corp.

Nuclear Science Abstracts

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Publisher :
ISBN 13 :
Total Pages : 628 pages
Book Rating : 4.0/5 ( download)

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Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1972 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt:

INIS Atomindeks

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Publisher :
ISBN 13 :
Total Pages : 1566 pages
Book Rating : 4.F/5 ( download)

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Download or read book INIS Atomindeks written by and published by . This book was released on 1985 with total page 1566 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advances in Geochemistry, Analytical Chemistry, and Planetary Sciences

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Publisher : Springer Nature
ISBN 13 : 3031098838
Total Pages : 660 pages
Book Rating : 4.0/5 (31 download)

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Book Synopsis Advances in Geochemistry, Analytical Chemistry, and Planetary Sciences by : Vladimir P. Kolotov

Download or read book Advances in Geochemistry, Analytical Chemistry, and Planetary Sciences written by Vladimir P. Kolotov and published by Springer Nature. This book was released on 2023-02-28 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents 41 selected articles written by leading researchers from the Vernadsky Institute of Geochemistry and Analytical Chemistry, part of the Russian Academy of Sciences. The articles are grouped by the following topics: (1) Geochemistry, (2) Meteoritics, Cosmochemistry, Lunar and Planetary Sciences, (3) Biogeochemistry and Ecology, and (4) Analytical Chemistry, Radiochemistry, and Radioecology. The articles present recent experimental data, theoretical investigations, critical reviews, the results of computer modeling in the above-mentioned fields. Intended to provide a scientific “snapshot” of the institute, the book also includes content on its history, main scientific achievements and current goals, together with detailed descriptions of its 25 laboratories and three museums so as to promote new international collaborations. Given its scope, the book will be of interest to all scientists and graduate students working in the areas of geochemistry, analytical chemistry and radiochemistry, earth and environmental sciences, biogeosciences, meteoritics and planetary science, and to those seeking new collaboration opportunities in these areas in Russia.

Defects in Microelectronic Materials and Devices

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Publisher : CRC Press
ISBN 13 : 1420043773
Total Pages : 772 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Defects in Microelectronic Materials and Devices by : Daniel M. Fleetwood

Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

Diffusion and Defect Data

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Publisher :
ISBN 13 :
Total Pages : 712 pages
Book Rating : 4.E/5 ( download)

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Download or read book Diffusion and Defect Data written by and published by . This book was released on 2004 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductor Power Devices

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Publisher : Springer Science & Business Media
ISBN 13 : 3642111254
Total Pages : 539 pages
Book Rating : 4.6/5 (421 download)

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Book Synopsis Semiconductor Power Devices by : Josef Lutz

Download or read book Semiconductor Power Devices written by Josef Lutz and published by Springer Science & Business Media. This book was released on 2011-01-15 with total page 539 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.