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Preparation And Characterization Of Hydrogenated Amorphous Boron Thin Films And Thin Film Solar Cells Produced By Glow Discharge Decomposition Methods Third Quarterly Progress Report July 1 1979 September 30 1979
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Book Synopsis Preparation and Characterization of Hydrogenated Amorphous Boron Thin Films and Thin Film Solar Cells Produced by Glow Discharge Decomposition Methods. Third Quarterly Progress Report, July 1, 1979-September 30, 1979 by :
Download or read book Preparation and Characterization of Hydrogenated Amorphous Boron Thin Films and Thin Film Solar Cells Produced by Glow Discharge Decomposition Methods. Third Quarterly Progress Report, July 1, 1979-September 30, 1979 written by and published by . This book was released on 1979 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This quarterly report is an account of recent progress in our program to produce hydrogenated amorphous boron thin films, to characterize these films, and to produce and evaluate solar cells from such amorphous boron films. In exact analogy with the situation previously existing for amorphous silicon, amorphous boron, without hydrogenation, has poor semiconducting properties due to defect states in the band gap. The decomposition of diborane, penataborane, and/or decarborane to produce thin films can reasonably be expected to result in amorphous boron thin films containing substantial quantities of hydrogen. The current program aims directly at the growth and doping of such hydrogenated amorphous boron thin films, the evaluation and optimization of their semiconductor properties, and the fabrication and testing of thin film solar cells from them. Both intrinsic and doped a-boron thin films have been produced. Film characterization efforts have been primarily focused on controlling the optical band gap by annealing the as-deposited films in vacuum at 400°C, and measuring the resulting optical gap as a function of bake-out time. Because the optical band gap of a-boron has been observed to vary from 0.8 eV to over 2.0 eV as a function of hydrogenation, it should be possible, by controlled annealing, to obtain a-boron films with an optimal band gap of 1.45 eV. In addition, work is nearing completion on the cryostat which will be used to measure the electrical gaps of our a-boron films.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1982 with total page 1696 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Solar Energy Update written by and published by . This book was released on 1980 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Government Reports Announcements & Index by :
Download or read book Government Reports Announcements & Index written by and published by . This book was released on 1980-07 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Government Reports Annual Index by :
Download or read book Government Reports Annual Index written by and published by . This book was released on 1980 with total page 1422 pages. Available in PDF, EPUB and Kindle. Book excerpt: Sections 1-2. Keyword Index.--Section 3. Personal author index.--Section 4. Corporate author index.-- Section 5. Contract/grant number index, NTIS order/report number index 1-E.--Section 6. NTIS order/report number index F-Z.
Book Synopsis Preparation and Characterization of Hydrogenated Amorphous Silicon Thin Films and Thin Film Solar Cells Produced by Ion Plating Techniques. Final Report, 1 January 1979-31 May 1980 by :
Download or read book Preparation and Characterization of Hydrogenated Amorphous Silicon Thin Films and Thin Film Solar Cells Produced by Ion Plating Techniques. Final Report, 1 January 1979-31 May 1980 written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion plating techniques for the preparation of hydrogenated amorphous silicon thin films have been successfully developed. The technique involves essentially the evaporation of elemental silicon through a d.c. produced hydrogen plasma. In this way hydrogen has been successfully incorporated into amorphous silicon films in concentrations as high as 30 atomic percent. Infrared spectroscopy indicates the usual SiHx stretching mode at approximately 2000 cm−1. Further evidence for the bonding of hydrogen was obtained from ESR measurement of hydrogenated and unhydrogenated samples. The measured unpaired spin density was a factor of 25 less in the hydrogenated sample. The optical absorption edges of the hydrogenated films fell in the usual range between 1.7 and 1.9 eV. Electrical conductivity measurements indicated a substantial reduction in the density of defect states in the gap as expected. It was also shown that hydrogenated amorphous silicon prepared by ion-plating could be doped by co-evaporation of the dopant element during film deposition. Both co-evaporated phosphorous and co-evaporated bismuth have been found to substantially increase the dark conductivity of a-Si:H while shifting the Fermi level towards the conduction band edge. An x-ray method for estimating the density and hydrogen content of a-Si:H has been developed. The measurement of strain in a-Si:H thin films is discussed. (WHK).
Download or read book Energy Research Abstracts written by and published by . This book was released on 1982 with total page 844 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Preparation and Characterization of Hydrogenated Amorphous Silicon Films Produced by Ion Plating and Hydrogenated Amorphous Boron Films Produced by Glow Discharge Decomposition by :
Download or read book Preparation and Characterization of Hydrogenated Amorphous Silicon Films Produced by Ion Plating and Hydrogenated Amorphous Boron Films Produced by Glow Discharge Decomposition written by and published by . This book was released on 1981 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Preparation and Characterization of Hydrogenated Amorphous-silicon Films Produced by Ion Plating and Hydrogenated Amorphous-boron Films Produced by Glow Discharge Decomposition by : Franklin H. Cocks
Download or read book Preparation and Characterization of Hydrogenated Amorphous-silicon Films Produced by Ion Plating and Hydrogenated Amorphous-boron Films Produced by Glow Discharge Decomposition written by Franklin H. Cocks and published by . This book was released on 1981 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Amorphous Boron-silicon-hydrogen Alloys for Thin-film Heterojunction Solar Cells Quarterly Technical Progress Report No. 1- by :
Download or read book Amorphous Boron-silicon-hydrogen Alloys for Thin-film Heterojunction Solar Cells Quarterly Technical Progress Report No. 1- written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Diagnostics of a Glow Discharge Used to Produce Hydrogenated Amorphous Silicon Films: A Final Subcontract Report by :
Download or read book Diagnostics of a Glow Discharge Used to Produce Hydrogenated Amorphous Silicon Films: A Final Subcontract Report written by and published by . This book was released on 1984 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Study of Plasma Enhanced Chemical Vapor Deposition of Boron-doped Hydrogenated Amorphous Silicon Thin Films and the Application to P-channel Thin Film Transistor by : Helinda Nominanda
Download or read book Study of Plasma Enhanced Chemical Vapor Deposition of Boron-doped Hydrogenated Amorphous Silicon Thin Films and the Application to P-channel Thin Film Transistor written by Helinda Nominanda and published by . This book was released on 2004 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Hydrogenated Amorphous Silicon Films Prepared by Glow Discharge of Disilane, Final Subcontract Report, 16 December 1987 - 28 February 1988 by :
Download or read book Hydrogenated Amorphous Silicon Films Prepared by Glow Discharge of Disilane, Final Subcontract Report, 16 December 1987 - 28 February 1988 written by and published by . This book was released on 1990 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Deposition and Characterization of Hydrogenated Silicon Thin Films for Flexible Solar Cell Applications by :
Download or read book Deposition and Characterization of Hydrogenated Silicon Thin Films for Flexible Solar Cell Applications written by and published by . This book was released on 2009 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Atomic-scale Characterization of Hydrogenated Amorphous-silicon Films and Devices. Annual Subcontract Report, 15 April 1994--14 March 1998 by :
Download or read book Atomic-scale Characterization of Hydrogenated Amorphous-silicon Films and Devices. Annual Subcontract Report, 15 April 1994--14 March 1998 written by and published by . This book was released on 1998 with total page 29 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research is concerned with improving the electronic properties of hydrogenated amorphous silicon (a-Si:H) films and of photovoltaic (PV) cells that use these films. Two approaches toward this goal are being taken. One is to establish the character of silicon particle growth in the rf glow discharges that are used to make the films and PV cells, and to understand the particle incorporation into the films. The ultimate goal of this effort is to find mitigation techniques that minimize the particle incorporation. During this contract period the authors have developed a novel particle light-scattering technique that provides a detailed and sensitive diagnostic of small (8-60 nm diameter) particles suspended in the discharge. The authors have used this to measure the particle growth rates and densities, versus conditions in pure-silane discharges. The second program is directed toward measuring the electronic properties of thin-film PV cells, as a function of depth within the cell. The approach being taken is to use a scanning tunneling microscope (STM) to measure the depth-dependent electronic properties of cross-sectioned PV cells. During the present period, measurements on single and tandem amorphous silicon cells have been carried out. Using STM current-voltage spectroscopy, these measurements distinguish the boundaries between the highly-conducting and intrinsic layers, as well as the chemical potential versus depth in the cell.
Book Synopsis Preparation and Physical Properties of Hydrogenated Amorphous Silicon Thin Films by : Gregory N. Parsons
Download or read book Preparation and Physical Properties of Hydrogenated Amorphous Silicon Thin Films written by Gregory N. Parsons and published by . This book was released on 1989 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Atomic-scale Characterization of Hydrogenated Amorphous-silicon Films and Devices by :
Download or read book Atomic-scale Characterization of Hydrogenated Amorphous-silicon Films and Devices written by and published by . This book was released on 1997 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our research is concerned with improving the electronic properties of hydrogenated amorphous silicon (a-Si:H) films and of photovoltaic (PV) cells that use these films. Two approaches toward this goal are being taken. One is to establish the character of silicon particle growth in the rf glow discharges that are used to make the films and PV cells, and to understand the particle incorporation into the films. The ultimate goal of this effort is to find mitigating techniques that minimize the particle incorporation. During this contract period, we have developed a novel particle light-scattering technique that provides a very detailed and sensitive diagnostic of the particles suspended in the discharge, The second program is directed toward measuring the electronic properties of these thin-film PV cells, as a function of depth within the cell. The approach being taken is to use a scanning tunneling microscope to measure the depth-dependent electronic properties of cross-sectioned PV cells. During the present period, cell cleaving and cross-section locating methods, both in a ultrahigh vacuum environment, have been successfully developed.
