Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Physics Based Technology Computer Aided Design And Compact Modeling With Special Emphasis On Advanced Indium Phosphide Heterojunction Bipolar Transistors
Download Physics Based Technology Computer Aided Design And Compact Modeling With Special Emphasis On Advanced Indium Phosphide Heterojunction Bipolar Transistors full books in PDF, epub, and Kindle. Read online Physics Based Technology Computer Aided Design And Compact Modeling With Special Emphasis On Advanced Indium Phosphide Heterojunction Bipolar Transistors ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Physics-based Technology Computer-aided Design and Compact Modeling with Special Emphasis on Advanced Indium-phosphide Heterojunction Bipolar Transistors by : Markus Müller
Download or read book Physics-based Technology Computer-aided Design and Compact Modeling with Special Emphasis on Advanced Indium-phosphide Heterojunction Bipolar Transistors written by Markus Müller and published by . This book was released on 2024 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physics-based Compact Modeling and Parameter Extraction for InP Heterojunction Bipolar Transistors with Special Emphasis on Material-specific Physical Effects and Geometry Scaling by : Tobias Nardmann
Download or read book Physics-based Compact Modeling and Parameter Extraction for InP Heterojunction Bipolar Transistors with Special Emphasis on Material-specific Physical Effects and Geometry Scaling written by Tobias Nardmann and published by . This book was released on 2017-07-26 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: The trend in modern electronics towards ever higher frequencies of operation and complexity as well as power efficiency requires a whole palette of different technologies to be available to circuit designers for various applications. While MOSFETs dominate the digital world, they have apparently reached their top analogue performance around the 65nm node. Emerging technologies such as CNTFETs offer excellent properties such as very high linearity and speed in theory, but have yet to deliver on those promises in practice. Heterojunction bipolar transistors (HBTs), on the other hand, offer a number of key advantages over competing technologies: A very high transconductance and therefore a relatively low impact of a load impedance on the transistor operation, a high transit frequency and maximum frequency of oscillation at a comparatively relaxed feature size and favorable noise characteristics. Like all semiconductor devices, HBTs can be fabricated in diferent semiconductor materials. The most common are SiGe HBTs, which even today reach values above (ft; fmax) = (300; 500) GHz and are projected to eventually reach the THz range. However, HBTs fabricated in III-V materials offer a versatile alternative. Depending on the materials that are used, III-V HBTs can be the fastest available bipolar transistors (competing only with HEMTs, also fabricated in III-V materials, for the title of fastest available transistors overall), offer very high breakdown voltages and therefore excellent power-handling capability, show good linearity or low noise figures at high frequencies. Typical applications for III-V HBTs include handset PAs, high-effciency and high-speed amplifiers as well as high-speed oscillators . Overall, III-V-based HBTs and especially InP HBTs are excellent candidates for future high-speed communication circuits. The goal of this work is to include important effects occurring in III-V materials in a compact model for circuit design in a physical, yet intuitiv
Book Synopsis Heterojunction Bipolar Transistors for Circuit Design by : Jianjun Gao
Download or read book Heterojunction Bipolar Transistors for Circuit Design written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2015-04-27 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Book Synopsis Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors by : Andreas Pawlak
Download or read book Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors written by Andreas Pawlak and published by Tudpress Verlag Der Wissenschaften Gmbh. This book was released on 2015-10-14 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the "Generalized Integral Charge Control Relation" was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance. New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.
Book Synopsis Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications by : Niccolò Rinaldi
Download or read book Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications written by Niccolò Rinaldi and published by River Publishers. This book was released on 2018-03-15 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Book Synopsis High-Frequency Bipolar Transistors by : Michael Reisch
Download or read book High-Frequency Bipolar Transistors written by Michael Reisch and published by Springer Science & Business Media. This book was released on 2003-03-05 with total page 686 pages. Available in PDF, EPUB and Kindle. Book excerpt: This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Book Synopsis Performance Prediction of a Future Silicon-germanium Heterojunction Bipolar Transistor Technology Using a Heterogeneous Set of Simulation Tools and Approaches by : Tommy Rosenbaum
Download or read book Performance Prediction of a Future Silicon-germanium Heterojunction Bipolar Transistor Technology Using a Heterogeneous Set of Simulation Tools and Approaches written by Tommy Rosenbaum and published by . This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bipolar complementary metal-oxide-semiconductor (BiCMOS) processescan be considered as the most general solution for RF products, as theycombine the mature manufacturing tools of CMOS with the speed and drivecapabilities of silicon-germanium (SiGe) heterojunction bipolar transistors(HBTs). HBTs in turn are major contenders for partially filling the terahertzgap, which describes the range in which the frequencies generated bytransistors and lasers do not overlap (approximately 0.3THz to 30 THz). Toevaluate the capabilities of such future devices, a reliable prediction methodologyis desirable. Using a heterogeneous set of simulation tools and approachesallows to achieve this goal successively and is beneficial for troubleshooting.Various scientific fields are combined, such as technology computer-aided design(TCAD), compact modeling and parameter extraction.To create a foundation for the simulation environment and to ensure reproducibility,the used material models of the hydrodynamic and drift-diffusionapproaches are introduced in the beginning of this thesis. The physical modelsare mainly based on literature data of Monte Carlo (MC) or deterministicsimulations of the Boltzmann transport equation (BTE). However, the TCADdeck must be calibrated on measurement data too for a reliable performanceprediction of HBTs. The corresponding calibration approach is based onmeasurements of an advanced SiGe HBT technology for which a technology specific parameter set of the HICUM/L2 compact model is extracted for thehigh-speed, medium-voltage and high-voltage transistor versions. With thehelp of the results, one-dimensional transistor characteristics are generatedthat serve as reference for the doping profile and model calibration. By performingelaborate comparisons between measurement-based reference dataand simulations, the thesis advances the state-of-the-art of TCAD-based predictionsand proofs the feasibility of the approach.Finally, the performance of a future technology in 28nm is predicted byapplying the heterogeneous methodology. On the basis of the TCAD results,bottlenecks of the technology are identified.
Book Synopsis SiGe Heterojunction Bipolar Transistors by : Peter Ashburn
Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Book Synopsis Compact Hierarchical Bipolar Transistor Modeling with Hicum by : Michael Schrter
Download or read book Compact Hierarchical Bipolar Transistor Modeling with Hicum written by Michael Schrter and published by World Scientific. This book was released on 2010 with total page 753 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Book Synopsis Investigation and Development of Advanced Si/SiGe and Si/SiGeC Heterojunction Bipolar Transistors by Means of Technology Modeling by : Andrés Quiroga
Download or read book Investigation and Development of Advanced Si/SiGe and Si/SiGeC Heterojunction Bipolar Transistors by Means of Technology Modeling written by Andrés Quiroga and published by . This book was released on 2013 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present work investigates the technology development of state-of-the-art SiGe and SiGeC Heterojunction Bipolar Transistors (HBT) by means of technology computer aided design (TCAD). The objective of this work is to obtain an advanced HBT very close to the real device not only in its process fabrication steps, but also in its physical behavior, geometric architecture, and electrical results. This investigation may lead to achieve the best electrical performances for the devices studied, in particular a maximum operating frequency of 500 GHz. The results of this work should help to obtain more physical and realistic simulations, a better understanding of charge transport, and to facilitate the development and optimization of SiGe and SiGeC HBT devices.The TCAD simulation kits for SiGe/SiGeC HBTs developed during our work have been carried out in the framework of the STMicroelectronics bipolar technology evolution. In order to achieve accurate simulations we have used, developed, calibrated and implemented adequate process models, physical models and extraction methodologies. To our knowledge, this work is the first approach developed for SiGe/SiGeC HBTs which takes into account the impact of the strain, and of the germanium and carbon content in the base, for both: process and electrical simulations.In this work we will work with the successive evolutions of B3T, B4T and B5T technologies. For each new device fMAX improves of 100 GHz, thus the technology B3T matches to 300 GHz, B4T and B5T to 400 and 500 GHz, respectively.Chapter one introduces the SiGe SiGeC heterojunction bipolar technologies and their operating principles. This chapter deals also with the high frequency AC transistor operation, the extraction methods for fMAX and the carrier transport in extremely scaled HBTs.Chapter two analyzes the physical models adapted to SiGeC strained alloys used in this work and the electrical simulation of HBT devices. This is also an important work of synthesis leading to the selection, implementation and development of dedicated models for SiGeC HBT simulation.Chapter three describes the B3T TCAD simulation platform developed to obtain an advanced HBT very close to the real device. In this chapter the process fabrication of the B3T technology is described together with the methodology developed to simulate advanced HBT SiGeC devices by means of realistic TCAD simulations.Chapter four describes the HBT architectures developed during this work. We will propose low-cost structures with less demanding performance requirements and highly performing structures but with a higher cost of production. The B4T architecture which has been manufactured in clean-room is deeply studied in this chapter. The impact of the main fabrication steps is analyzed in order to find the keys process parameters to increase fMAX without degrading other important electrical characteristics. At the end of this chapter the results obtained is used to elaborate a TCAD simulation platform taking into account the best trade-off of the different key process parameters to obtain a SiGeC HBT working at 500 GHz of fMAX.
Book Synopsis An Indium-phosphide Double-heterojunction Bipolar Transistor Technology for 80 Gb/s Integrated Circuits by : Iwan Schnyder
Download or read book An Indium-phosphide Double-heterojunction Bipolar Transistor Technology for 80 Gb/s Integrated Circuits written by Iwan Schnyder and published by . This book was released on 2005-01-01 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A Compact Physically-based Bipolar Transistor Model by : Kimon W. Michaels
Download or read book A Compact Physically-based Bipolar Transistor Model written by Kimon W. Michaels and published by . This book was released on 1989 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: "A high current bipolar transistor model for circuit simulation which includes new base, B-C depletion, and collector region models is described. DC characteristics and execution time are compared with Gummel-Poon model and numerical device simulations."
Book Synopsis Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices by : Tanya Kirilova Gachovska
Download or read book Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices written by Tanya Kirilova Gachovska and published by Morgan & Claypool Publishers. This book was released on 2013-11-01 with total page 85 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.
Book Synopsis Ultra-Fast Silicon Bipolar Technology by : Ludwig Treitinger
Download or read book Ultra-Fast Silicon Bipolar Technology written by Ludwig Treitinger and published by Springer Science & Business Media. This book was released on 2013-03-13 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.
Book Synopsis Silicon-germanium Heterojunction Bipolar Transistors by : John D. Cressler
Download or read book Silicon-germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
Book Synopsis Design, Fabrication, and Modeling of Indium Phosphide Double-Heterojunction Bipolar Transistors With Sub-Millimeter Wave Cutoff Frequency by :
Download or read book Design, Fabrication, and Modeling of Indium Phosphide Double-Heterojunction Bipolar Transistors With Sub-Millimeter Wave Cutoff Frequency written by and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1987 with total page 920 pages. Available in PDF, EPUB and Kindle. Book excerpt:
