Physics And Technology Of High K Gate Dielectrics 7

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Physics and Technology of High-k Gate Dielectrics 4

Author : Samares Kar
Publisher : The Electrochemical Society
ISBN 13 : 1566775035
Total Pages : 565 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis Physics and Technology of High-k Gate Dielectrics 4 by : Samares Kar

Download or read book Physics and Technology of High-k Gate Dielectrics 4 written by Samares Kar and published by The Electrochemical Society. This book was released on 2006 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.

Physics and Technology of High-k Gate Dielectrics II

Author : Samares Kar
Publisher : The Electrochemical Society
ISBN 13 : 9781566774055
Total Pages : 512 pages
Book Rating : 4.7/5 (74 download)

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Book Synopsis Physics and Technology of High-k Gate Dielectrics II by : Samares Kar

Download or read book Physics and Technology of High-k Gate Dielectrics II written by Samares Kar and published by The Electrochemical Society. This book was released on 2004 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This volume is the proceedings of The Second International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues ... and was held during [the] 204th Meeting [of the Electrochemical Society] ..."--P. v.

High-k Gate Dielectrics for CMOS Technology

Author : Gang He
Publisher : John Wiley & Sons
ISBN 13 : 3527646361
Total Pages : 560 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis High-k Gate Dielectrics for CMOS Technology by : Gang He

Download or read book High-k Gate Dielectrics for CMOS Technology written by Gang He and published by John Wiley & Sons. This book was released on 2012-08-10 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of Samares Kar

Author : D. Misra
Publisher : The Electrochemical Society
ISBN 13 : 1607688182
Total Pages : 411 pages
Book Rating : 4.6/5 (76 download)

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Book Synopsis Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of Samares Kar by : D. Misra

Download or read book Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of Samares Kar written by D. Misra and published by The Electrochemical Society. This book was released on with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductors, Dielectrics, and Metals for Nanoelectronics 12

Author : S. Kar
Publisher : The Electrochemical Society
ISBN 13 : 1607685450
Total Pages : 203 pages
Book Rating : 4.6/5 (76 download)

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Book Synopsis Semiconductors, Dielectrics, and Metals for Nanoelectronics 12 by : S. Kar

Download or read book Semiconductors, Dielectrics, and Metals for Nanoelectronics 12 written by S. Kar and published by The Electrochemical Society. This book was released on 2014 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt:

High Permittivity Gate Dielectric Materials

Author : Samares Kar
Publisher : Springer Science & Business Media
ISBN 13 : 3642365353
Total Pages : 515 pages
Book Rating : 4.6/5 (423 download)

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Book Synopsis High Permittivity Gate Dielectric Materials by : Samares Kar

Download or read book High Permittivity Gate Dielectric Materials written by Samares Kar and published by Springer Science & Business Media. This book was released on 2013-06-25 with total page 515 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .

Defects in HIgh-k Gate Dielectric Stacks

Author : Evgeni Gusev
Publisher : Springer Science & Business Media
ISBN 13 : 9781402043666
Total Pages : 508 pages
Book Rating : 4.0/5 (436 download)

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Book Synopsis Defects in HIgh-k Gate Dielectric Stacks by : Evgeni Gusev

Download or read book Defects in HIgh-k Gate Dielectric Stacks written by Evgeni Gusev and published by Springer Science & Business Media. This book was released on 2006-01-27 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.

Defects in HIgh-k Gate Dielectric Stacks

Author : Evgeni Gusev
Publisher : Springer Science & Business Media
ISBN 13 : 1402043678
Total Pages : 495 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Defects in HIgh-k Gate Dielectric Stacks by : Evgeni Gusev

Download or read book Defects in HIgh-k Gate Dielectric Stacks written by Evgeni Gusev and published by Springer Science & Business Media. This book was released on 2006-02-15 with total page 495 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.

Micro- and Nanoelectronics

Author : Tomasz Brozek
Publisher : CRC Press
ISBN 13 : 1351831348
Total Pages : 388 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Micro- and Nanoelectronics by : Tomasz Brozek

Download or read book Micro- and Nanoelectronics written by Tomasz Brozek and published by CRC Press. This book was released on 2017-12-19 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text: Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches Describes the latest developments in carbon nanotubes, iii-v devices structures, and more Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.

High Dielectric Constant Materials

Author : Howard Huff
Publisher : Springer Science & Business Media
ISBN 13 : 3540264620
Total Pages : 723 pages
Book Rating : 4.5/5 (42 download)

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Book Synopsis High Dielectric Constant Materials by : Howard Huff

Download or read book High Dielectric Constant Materials written by Howard Huff and published by Springer Science & Business Media. This book was released on 2005-11-02 with total page 723 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology.

Thin Films on Silicon

Author : Vijay Narayanan
Publisher :
ISBN 13 : 9789814740487
Total Pages : 550 pages
Book Rating : 4.7/5 (44 download)

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Book Synopsis Thin Films on Silicon by : Vijay Narayanan

Download or read book Thin Films on Silicon written by Vijay Narayanan and published by . This book was released on 2016 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This volume provides a broad overview of the fundamental materials science of thin films that use silicon as an active substrate or passive template, with an emphasis on opportunities and challenges for practical applications in electronics and photonics. It covers three materials classes on silicon: Semiconductors such as undoped and doped Si and SiGe, SiC, GaN, and III-V arsenides and phosphides; dielectrics including silicon nitride and high-k, low-k, and electro-optically active oxides; and metals, in particular silicide alloys. The impact of film growth and integration on physical, electrical, and optical properties, and ultimately device performance, is highlighted."--Publisher's website.

High k Gate Dielectrics

Author : Michel Houssa
Publisher : CRC Press
ISBN 13 : 1420034146
Total Pages : 614 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis High k Gate Dielectrics by : Michel Houssa

Download or read book High k Gate Dielectrics written by Michel Houssa and published by CRC Press. This book was released on 2003-12-01 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ

ULSI Process Integration 5

Author : Cor L. Claeys
Publisher : The Electrochemical Society
ISBN 13 : 1566775728
Total Pages : 509 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis ULSI Process Integration 5 by : Cor L. Claeys

Download or read book ULSI Process Integration 5 written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 2007 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: The symposium provided a forum for reviewing and discussing all aspects of process integration, with special focus on nanoscaled technologies, 65 nm and beyond on DRAM, SRAM, flash memory, high density logic-low power, RF, mixed analog-digital, process integration yield, CMP chemistries, low-k processes, gate stacks, metal gates, rapid thermal processing, silicides, copper interconnects, carbon nanotubes, novel materials, high mobility substrates (SOI, sSi, SiGe, GeOI), strain engineering, and hybrid integration.

Materials Fundamentals of Gate Dielectrics

Author : Alexander A. Demkov
Publisher : Springer Science & Business Media
ISBN 13 : 1402030789
Total Pages : 477 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Materials Fundamentals of Gate Dielectrics by : Alexander A. Demkov

Download or read book Materials Fundamentals of Gate Dielectrics written by Alexander A. Demkov and published by Springer Science & Business Media. This book was released on 2006-05-24 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy. Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering.

Selected Semiconductor Research

Author : Ming Fu Li
Publisher : World Scientific
ISBN 13 : 1908978384
Total Pages : 529 pages
Book Rating : 4.9/5 (89 download)

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Book Synopsis Selected Semiconductor Research by : Ming Fu Li

Download or read book Selected Semiconductor Research written by Ming Fu Li and published by World Scientific. This book was released on 2011-02-28 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: This unique volume assembles the author's scientific and engineering achievements of the past three decades in the areas of (1) semiconductor physics and materials, including topics in deep level defects and band structures, (2) CMOS devices, including the topics in device technology, CMOS device reliability, and nano CMOS device quantum modeling, and (3) Analog Integrated circuit design. It reflects the scientific career of a semiconductor researcher educated in China during the 20th century. The book can be referenced by research scientists, engineers, and graduate students working in the areas of solid state and semiconductor physics and materials, electrical engineering and semiconductor devices, and chemical engineering./a

Fundamentals of Bias Temperature Instability in MOS Transistors

Author : Souvik Mahapatra
Publisher : Springer
ISBN 13 : 8132225082
Total Pages : 282 pages
Book Rating : 4.1/5 (322 download)

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Book Synopsis Fundamentals of Bias Temperature Instability in MOS Transistors by : Souvik Mahapatra

Download or read book Fundamentals of Bias Temperature Instability in MOS Transistors written by Souvik Mahapatra and published by Springer. This book was released on 2015-08-05 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.

Emerging Low-Power Semiconductor Devices

Author : Shubham Tayal
Publisher : CRC Press
ISBN 13 : 1000640272
Total Pages : 336 pages
Book Rating : 4.0/5 (6 download)

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Book Synopsis Emerging Low-Power Semiconductor Devices by : Shubham Tayal

Download or read book Emerging Low-Power Semiconductor Devices written by Shubham Tayal and published by CRC Press. This book was released on 2022-08-31 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives insight into the emerging semiconductor devices from their applications in electronic circuits. It discusses the challenges in the field of engineering and applications of advanced low-power devices. Emerging Low-Power Semiconductor Devices: Applications for Future Technology Nodes offers essential exposure to low-power devices, and applications in wireless, biosensing, and circuit domains. This book provides a detailed discussion on all aspects, including the current and future scenarios related to the low-power device. The book also presents basic knowledge about field-effect transistor (FET) devices and introduces emerging and novel FET devices. The chapters include a review of the usage of FET devices in various domains like biosensing, wireless, and cryogenics applications. The chapters also explore device-circuit co-design issues in the digital and analog domains. The content is presented in an easy-to-follow manner that makes it ideal for individuals new to the subject. This book is intended for scientists, researchers, and postgraduate students looking for an understanding of device physics, circuits, and systems.