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Physical Models Of Semiconductor Quantum Devices
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Book Synopsis Physical Models of Semiconductor Quantum Devices by : Ying Fu
Download or read book Physical Models of Semiconductor Quantum Devices written by Ying Fu and published by Springer. This book was released on 2013-11-27 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: This detailed book addresses three main areas of solid state electronics, providing an insight into the state of the art in material and device research that will be of interest to all those involved in compound semiconductors.
Book Synopsis Physical Models of Semiconductor Quantum Devices by : Ying Fu
Download or read book Physical Models of Semiconductor Quantum Devices written by Ying Fu and published by Springer Science & Business Media. This book was released on 2013-08-29 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: The science and technology relating to nanostructures continues to receive significant attention for its applications to various fields including microelectronics, nanophotonics, and biotechnology. This book describes the basic quantum mechanical principles underlining this fast developing field. From the fundamental principles of quantum mechanics to nanomaterial properties, from device physics to research and development of new systems, this title is aimed at undergraduates, graduates, postgraduates, and researchers.
Book Synopsis Physical Models of Semiconductor Quantum Devices by : Ying Fu
Download or read book Physical Models of Semiconductor Quantum Devices written by Ying Fu and published by Springer. This book was released on 2011-09-02 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt: This detailed book addresses three main areas of solid state electronics, providing an insight into the state of the art in material and device research that will be of interest to all those involved in compound semiconductors.
Book Synopsis Theory of Semiconductor Quantum Devices by : Fausto Rossi
Download or read book Theory of Semiconductor Quantum Devices written by Fausto Rossi and published by Springer Science & Business Media. This book was released on 2011-01-13 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt: Primary goal of this book is to provide a cohesive description of the vast field of semiconductor quantum devices, with special emphasis on basic quantum-mechanical phenomena governing the electro-optical response of new-generation nanomaterials. The book will cover within a common language different types of optoelectronic nanodevices, including quantum-cascade laser sources and detectors, few-electron/exciton quantum devices, and semiconductor-based quantum logic gates. The distinguishing feature of the present volume is a unified microscopic treatment of quantum-transport and coherent-optics phenomena on ultrasmall space- and time-scales, as well as of their semiclassical counterparts.
Book Synopsis Physical Models for Quantum Dots by : Jean-Pierre Leburton
Download or read book Physical Models for Quantum Dots written by Jean-Pierre Leburton and published by CRC Press. This book was released on 2021-12-23 with total page 991 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the early 1990s, quantum dots have become an integral part of research in solid state physics for their fundamental properties that mimic the behavior of atoms and molecules on a larger scale. They also have a broad range of applications in engineering and medicines for their ability to tune their electronic properties to achieve specific functions. This book is a compilation of articles that span 20 years of research on comprehensive physical models developed by their authors to understand the detailed properties of these quantum objects and to tailor them for specific applications. Far from being exhaustive, this book focuses on topics of interest for solid state physicists, materials scientists, engineers, and general readers, such as quantum dots and nanocrystals for single-electron charging with applications in memory devices, quantum dots for electron-spin manipulation with applications in quantum information processing, and finally self-assembled quantum dots for applications in nanophotonics.
Book Synopsis Advanced Physical Models for Silicon Device Simulation by : Andreas Schenk
Download or read book Advanced Physical Models for Silicon Device Simulation written by Andreas Schenk and published by Springer Science & Business Media. This book was released on 1998-07-07 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal
Book Synopsis Physical Models for Quantum Wires, Nanotubes, and Nanoribbons by : Jean-Pierre Leburton
Download or read book Physical Models for Quantum Wires, Nanotubes, and Nanoribbons written by Jean-Pierre Leburton and published by CRC Press. This book was released on 2023-08-31 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt: A compilation of articles that span more than 30 years of research on developing comprehensive physical models. Address the effect of quantum confinement on lattice vibrations, carriers scattering rates, and charge transport and present practical examples of solutions to the Boltzmann equation. Topics on quantum transport and spin effects in unidimensional molecular structures such as carbon nanotubes and graphene nanoribbons.
Book Synopsis Quantum Semiconductor Devices and Technologies by : Tom Pearsall
Download or read book Quantum Semiconductor Devices and Technologies written by Tom Pearsall and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: stacked QD structure and is useful for examining the possibility of all optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics. The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas.
Book Synopsis Introduction to Semiconductor Device Modelling by : Christopher M. Snowden
Download or read book Introduction to Semiconductor Device Modelling written by Christopher M. Snowden and published by World Scientific. This book was released on 1998 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Book Synopsis Compound Semiconductors Strained Layers and Devices by : Suresh Jain
Download or read book Compound Semiconductors Strained Layers and Devices written by Suresh Jain and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, extensive work has been done on strain, dislocations and mechanical properties of strained layers. Although it is not possible to describe all this work in a monograph of this size, Compound Semiconductors Strained Layers and Devices provides an overview with sufficient detail to cover all the essential aspects of recent developments in the field. The book concentrates on compound semiconductors with emphasis on wideband gap II-VI and III-Nitride semiconductors. GeSi strained layers are discussed for comparison to clarify the underlying physics. The effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors are discussed, as are Piezoelectric Effects and Quantum Confined Stark Effects. Magnetic polarons in diluted II-VI magnetic polarons are also covered. Among the applications, blue and green LEDs and LDs and mid-IR LDs are included. A whole chapter is devoted to these devices. Another chapter examines transistors based on conventional III-V, II-VI and III-nitride semiconductors. The subject matter is treated at a level appropriate for students and senior researchers interested in material science, and in designing and modeling semiconductor devices. It will also be useful to engineers and material scientists concerned with the effects of strain on the mechanical properties of crystalline layers of any material.
Book Synopsis Transport of Information-Carriers in Semiconductors and Nanodevices by : El-Saba, Muhammad
Download or read book Transport of Information-Carriers in Semiconductors and Nanodevices written by El-Saba, Muhammad and published by IGI Global. This book was released on 2017-03-31 with total page 690 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rapid developments in technology have led to enhanced electronic systems and applications. When utilized correctly, these can have significant impacts on communication and computer systems. Transport of Information-Carriers in Semiconductors and Nanodevices is an innovative source of academic material on transport modelling in semiconductor material and nanoscale devices. Including a range of perspectives on relevant topics such as charge carriers, semiclassical transport theory, and organic semiconductors, this is an ideal publication for engineers, researchers, academics, professionals, and practitioners interested in emerging developments on transport equations that govern information carriers.
Book Synopsis Computational Electronics by : Dragica Vasileska
Download or read book Computational Electronics written by Dragica Vasileska and published by CRC Press. This book was released on 2017-12-19 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt: Starting with the simplest semiclassical approaches and ending with the description of complex fully quantum-mechanical methods for quantum transport analysis of state-of-the-art devices, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation provides a comprehensive overview of the essential techniques and methods for effectively analyzing transport in semiconductor devices. With the transistor reaching its limits and new device designs and paradigms of operation being explored, this timely resource delivers the simulation methods needed to properly model state-of-the-art nanoscale devices. The first part examines semiclassical transport methods, including drift-diffusion, hydrodynamic, and Monte Carlo methods for solving the Boltzmann transport equation. Details regarding numerical implementation and sample codes are provided as templates for sophisticated simulation software. The second part introduces the density gradient method, quantum hydrodynamics, and the concept of effective potentials used to account for quantum-mechanical space quantization effects in particle-based simulators. Highlighting the need for quantum transport approaches, it describes various quantum effects that appear in current and future devices being mass-produced or fabricated as a proof of concept. In this context, it introduces the concept of effective potential used to approximately include quantum-mechanical space-quantization effects within the semiclassical particle-based device simulation scheme. Addressing the practical aspects of computational electronics, this authoritative resource concludes by addressing some of the open questions related to quantum transport not covered in most books. Complete with self-study problems and numerous examples throughout, this book supplies readers with the practical understanding required to create their own simulators.
Book Synopsis Quantum Wells, Wires and Dots by : Paul Harrison
Download or read book Quantum Wells, Wires and Dots written by Paul Harrison and published by John Wiley & Sons. This book was released on 2011-09-26 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum Wells, Wires and Dots, 3rd Edition is aimed at providing all the essential information, both theoretical and computational, in order that the reader can, starting from essentially nothing, understand how the electronic, optical and transport properties of semiconductor heterostructures are calculated. Completely revised and updated, this text is designed to lead the reader through a series of simple theoretical and computational implementations, and slowly build from solid foundations, to a level where the reader can begin to initiate theoretical investigations or explanations of their own.
Book Synopsis Device and Circuit Cryogenic Operation for Low Temperature Electronics by : Francis Balestra
Download or read book Device and Circuit Cryogenic Operation for Low Temperature Electronics written by Francis Balestra and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.
Download or read book SOI Lubistors written by Yasuhisa Omura and published by John Wiley & Sons. This book was released on 2013-08-27 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors No comprehensive description of the physics and possible applications of the Lubistor can be found in a single source even though the Lubistor is already being used in SOI LSIs. The book provides, for the first time, a comprehensive understanding of the physics of the Lubistor. The author argues that a clear understanding of the fundamental physics of the pn junction is essential to allowing scientists and engineers to propose new devices. Since 2001 IBM has been applying the Lubistor to commercial SOI LSIs (large scale integrated devices) used in PCs and game machines. It is a key device in that it provides electrostatic protection to the LSIs. The book explains the device modeling for such applications, and covers the recent analog circuit application of the voltage reference circuit. The author also reviews the physics and the modeling of ideal and non-ideal pn junctions through reconsideration of the Shockley’s theory, offering readers an opportunity to study the physics of pn junction. Pn-junction devices are already applied to the optical communication system as the light emitter and the receiver. Alternatively, optical signal modulators are proposed for coupling the Si optical waveguide with the pn-junction injector. The book also explores the photonic crystal physics and device applications of the Lubistor. Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors Written by the inventor of the Lubistor, this volume describes the technology for readers to understand the physics and applications of the device First book devoted to the Lubistor transistor, presently being utilized in electrostatic discharge (ESD) applications in SOI technology, a growing market for semiconductor devices and advanced technologies Approaches the topic in a systematic manner, from physical theory, through to modelling, and finally circuit applications This is an advanced level book requiring knowledge of electrical and electronics engineering at graduate level. Contents includes: Concept of Ideal pn Junction/Proposal of Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistor (Lubistor)/ Noise Characteristics and Modeling of Lubistor/Negative Conductance Properties in Extremely Thin SOI Lubistors/ Two-Dimensionally Confined Injection Phenomena at Low Temperatures in Sub-10-nm-Thick SOI Lubistors/ Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultra-Thin SOI Lubistors/ Gate-Controlled Bipolar Action in Ultra-thin Dynamic Threshold SOI MOSFET/Sub-Circuit Models of SOI Lubistors for Electrostatic Discharge Protection Circuit Design and Their Applications/A New Basic Element for Neural Logic Functions and Functionality in Circuit Applications/Possible Implementation of SOI Lubistors into Conventional Logic Circuits/Potentiality of Electro-Optic Modulator Based on SOI Waveguide/Principles of Parameter Extraction/Feasibility of Lubistor-Based Avalanche Photo Transistor
Book Synopsis Infrared Detectors and Emitters: Materials and Devices by : Peter Capper
Download or read book Infrared Detectors and Emitters: Materials and Devices written by Peter Capper and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date view of the various detector/emitter materials systems currently in use or being actively researched. The book is aimed at newcomers and those already working in the IR industry. It provides both an introductory text and a valuable overview of the entire field.
Book Synopsis Lead-free Electronics by : Sanka Ganesan
Download or read book Lead-free Electronics written by Sanka Ganesan and published by John Wiley & Sons. This book was released on 2006-03-31 with total page 796 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lead-free Electronics provides guidance on the design and use of lead-free electronics as well as technical and legislative perspectives. All the complex challenges confronting the elec-tronics industry are skillfully addressed: * Complying with state legislation * Implementing the transition to lead-free electronics, including anticipating associated costs and potential supply chain issues * Understanding intellectual property issues in lead-free alloys and their applications, including licensing and infringement * Implementing cost effective manufacturing and testing * Reducing risks due to tin whiskers * Finding lead-free solutions in harsh environments such as in the automotive and telecommunications industries * Understanding the capabilities and limitations of conductive adhesives in lead-free interconnects * Devising solutions for lead-free, flip-chip interconnects in high-performance integrated circuit products Each chapter is written by leading experts in the field and carefully edited to ensure a consistent approach. Readers will find all the latest information, including the most recent data on cyclic thermomechanical deformation properties of lead-free SnAgCu alloys and a comparison of the properties of standard Sn-Pb versus lead-free alloys, using the energy partitioning approach. With legislative and market pressure to eliminate the use of lead in electronics manufacturing, this timely publication is essential reading for all engineers and professionals in the electronics industry.