Photoluminescence studies in indium phosphide

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ISBN 13 :
Total Pages : 196 pages
Book Rating : 4.:/5 (22 download)

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Book Synopsis Photoluminescence studies in indium phosphide by : Steven David Lester

Download or read book Photoluminescence studies in indium phosphide written by Steven David Lester and published by . This book was released on 1987 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:

NMR and Photoluminescence Studies of Indium Phosphide Nanocrystals

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ISBN 13 :
Total Pages : 64 pages
Book Rating : 4.:/5 (36 download)

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Book Synopsis NMR and Photoluminescence Studies of Indium Phosphide Nanocrystals by : John A. Skinta

Download or read book NMR and Photoluminescence Studies of Indium Phosphide Nanocrystals written by John A. Skinta and published by . This book was released on 1996 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Photoluminescence studies of processing-induced defects in indium phosphide and gallium arsenide

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ISBN 13 :
Total Pages : 192 pages
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Book Synopsis Photoluminescence studies of processing-induced defects in indium phosphide and gallium arsenide by : Tae Seung Kim

Download or read book Photoluminescence studies of processing-induced defects in indium phosphide and gallium arsenide written by Tae Seung Kim and published by . This book was released on 1987 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Studies of Iron Acceptors in Indium Phosphide by Photoconductivity and Photoluminescence Techniques

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Publisher : Open Dissertation Press
ISBN 13 : 9781374762299
Total Pages : pages
Book Rating : 4.7/5 (622 download)

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Book Synopsis Studies of Iron Acceptors in Indium Phosphide by Photoconductivity and Photoluminescence Techniques by : 伍寶洪

Download or read book Studies of Iron Acceptors in Indium Phosphide by Photoconductivity and Photoluminescence Techniques written by 伍寶洪 and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Studies of Iron Acceptors in Indium Phosphide by Photoconductivity and Photoluminescence Techniques" by 伍寶洪, Po-hung, Ng, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3123195 Subjects: Indium phosphide Semiconductors - Impurity transition Photoconductivity Photoluminescence

Studies of Iron Acceptors in Indium Phosphide by Photoconductivity and Photoluminescence Techniques

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ISBN 13 :
Total Pages : 404 pages
Book Rating : 4.:/5 (513 download)

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Book Synopsis Studies of Iron Acceptors in Indium Phosphide by Photoconductivity and Photoluminescence Techniques by : Po-hung Ng

Download or read book Studies of Iron Acceptors in Indium Phosphide by Photoconductivity and Photoluminescence Techniques written by Po-hung Ng and published by . This book was released on 1990 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Photoluminescence of Undoped, Semi-Insulating, and Mg-Implanted Indium Phosphide

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ISBN 13 :
Total Pages : 198 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis Photoluminescence of Undoped, Semi-Insulating, and Mg-Implanted Indium Phosphide by : Gernot Siefried Pomrenke

Download or read book Photoluminescence of Undoped, Semi-Insulating, and Mg-Implanted Indium Phosphide written by Gernot Siefried Pomrenke and published by . This book was released on 1979 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: A photoluminescent investigation was made of undoped, semi-insulating, unannealed and annealed Mg-ion implanted, indium phosphide which originated from Czochralski, vapor, and liquid grown crystals. Ion implantation was performed at fluences of 5 x 10 to the 12th power ions/sq cm to 1 x 10 to the 15 power ions/sq cm with an energy of 120 keV at room temperature, followed by annealing at 700 degrees C and 750 degrees C for fifteen minutes using a Si3N4 encapsulant. Luminescence of undoped InP was studied with respect to temperature, emission intensity, and excitation intensity; results included the possible identification of the following radiative recombinations: free exciton, bound exciton, donor-to-valence, and donor-to-acceptor. Broad, low intensity peaks were identified at 1.0541 eV, 0.9374 eV, and 1.15 eV. Spectral results of the less intense semi-insulating InP:Fe were identical to undoped InP aside from a 1.38 eV high energy shoulder and low intensity peak at 1.31 eV. Photoluminescence of unannealed, implanted samples resulted in a 0.9643 eV peak with a long, low energy shoulder. Emission intensity and peak energy of annealed, implanted samples were studied as a function of dosage and anneal temperature. The post-implantation annealing at 750 degree C was sufficient to obtain efficient luminescence. Analysis of the 750 degree C annealed samples indicates that the peak due to recombinations involving implanted Mg acceptors is located between 1.384 eV at 50 degrees K. Superior spectral results from VPE InP places the Mg peak position at 1.3801 eV.

A photoluminescence investigation of indium phosphide

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ISBN 13 :
Total Pages : pages
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Book Synopsis A photoluminescence investigation of indium phosphide by : Christopher D. Adams

Download or read book A photoluminescence investigation of indium phosphide written by Christopher D. Adams and published by . This book was released on 1983 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

A Photoluminescence Study of Heavily Doped Indium Phosphide

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ISBN 13 :
Total Pages : 420 pages
Book Rating : 4.:/5 (322 download)

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Book Synopsis A Photoluminescence Study of Heavily Doped Indium Phosphide by : Robert Michael Sieg

Download or read book A Photoluminescence Study of Heavily Doped Indium Phosphide written by Robert Michael Sieg and published by . This book was released on 1994 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Time Resolved Photoluminescence of Ytterbium in Indium Phosphide

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ISBN 13 :
Total Pages : 117 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis Time Resolved Photoluminescence of Ytterbium in Indium Phosphide by : Thad F. Bumgarner

Download or read book Time Resolved Photoluminescence of Ytterbium in Indium Phosphide written by Thad F. Bumgarner and published by . This book was released on 1988 with total page 117 pages. Available in PDF, EPUB and Kindle. Book excerpt: Time resolved photoluminescence of ytterbium (Yb) implanted in indium phosphide (Inp) was the primary emphasis of this research. The decay lifetimes of the 1002 nm Yb emission were investigated as a function of temperature. Initial attempts were made to investigate as a function of temperature. Initial attempts were made to investigate aluminum gallium arsenide (AlGaAs) implanted with ytterbium. Theses. (mjm).

Properties of Indium Phosphide

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Publisher : Institution of Electrical Engineers
ISBN 13 :
Total Pages : 528 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Properties of Indium Phosphide by :

Download or read book Properties of Indium Phosphide written by and published by Institution of Electrical Engineers. This book was released on 1991 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: Invaluble to those studying or exploiting Indium Phosphide, which can provide tunable light sources at wavelengths which undergo minimum attenuation in fiber optic cables.

PHOTOLUMINESCENCE STUDIES OF THE NITROGEN ISOELECTRONIC TRAP IN GALLIUM ARSENIDE PHOSPHIDE AND INDIUM GALLIUM PHOSPHIDE

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Total Pages : pages
Book Rating : 4.:/5 (932 download)

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Book Synopsis PHOTOLUMINESCENCE STUDIES OF THE NITROGEN ISOELECTRONIC TRAP IN GALLIUM ARSENIDE PHOSPHIDE AND INDIUM GALLIUM PHOSPHIDE by :

Download or read book PHOTOLUMINESCENCE STUDIES OF THE NITROGEN ISOELECTRONIC TRAP IN GALLIUM ARSENIDE PHOSPHIDE AND INDIUM GALLIUM PHOSPHIDE written by and published by . This book was released on 1973 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Photoluminescence of Indium Phosphide and Its Dependence on Potential Potential at Electrodes in Aqueous Electrolytes

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ISBN 13 :
Total Pages : 272 pages
Book Rating : 4.:/5 (264 download)

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Book Synopsis Photoluminescence of Indium Phosphide and Its Dependence on Potential Potential at Electrodes in Aqueous Electrolytes by : Enda Morley

Download or read book Photoluminescence of Indium Phosphide and Its Dependence on Potential Potential at Electrodes in Aqueous Electrolytes written by Enda Morley and published by . This book was released on 2002 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Photoluminescence

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ISBN 13 : 9781536135381
Total Pages : 231 pages
Book Rating : 4.1/5 (353 download)

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Book Synopsis Photoluminescence by : Ellis Marsden

Download or read book Photoluminescence written by Ellis Marsden and published by . This book was released on 2018 with total page 231 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this collection, chalcogenide glasses doped with rare earth elements are proposed as particularly attractive materials for applications in integrated photonics. The opening chapter is dedicated to reviewing the studies on optical properties of (GeS2)100?x (Ga2S3)x (x=20, 25 and 33 mol%) glasses, doped with Er2S3 in a wide range from 1.8 to 2.7 mol%, by absorption and photoluminescence (PL) spectroscopy. The authors focus on features in absorption, emission, and local ordering and their derivatives as a function of excitation wavelength, Er3+ doping level, Ga content and temperature for the (GeS2)80 (Ga2S3)20 host composition. Next, to demonstrate the technological importance of optical devices with unique properties derived from rare-earth activated glasses, the authors reviewed some fundamental aspects of rare-earth doped optical glassy devices where the light is confined in different volumes or shapes, namely fibers, monoliths, film/coatings and microspheres. Rare-earth activated glasses are often used as components in integrated optical circuits. Later, optical characteristics of semiconducting crystals with layered structure due to quantization effects in the architecture governed by the atomic arrangements are discussed. In order to study the microscopic optical processes of these materials, the phenomenological research from photoluminescence studies (PL) was determined to be essential to those established by conventional bulk materials. Layered crystals such as Cs3Bi2I9, BiI3 and PbI2 have been considered for reporting the PL spectra in order to discuss relevant information concerning photo-induced charge carrier separation and also the radiative and non-radiative recombination dependent on deep or shallow trap states. Additionally, the photoluminescence properties of composites based on conjugated polymers and carbon nanoparticles of the type carbon nanotubes, reduced graphene oxide and fullerenes are analyzed. A review is presented on the photoluminescence properties of various macromolecular compounds, for example poly(para-phenylenevinylene), poly(3-hexylthiophene), poly(3,4-ethylenedioxythiophene-co-pyrene), polydiphenylamine and poly(9,9-dioctylfluorenyl-2,7-diyl) as well as effects induced by the carbon nanoparticles mentioned above. The following chapter focusses on fullerenes, carbon nanotubes, graphene, graphene oxide, graphene and carbon quantum dots. Firstly, the general physical and chemical properties of different carbon-based nanomaterials are presented, such as the crystalline structure, morphology and chemical composition. Additionally, the possibilities of application of carbon-based nanomaterials due to its PL properties are analyzed. The concluding chapter focuses on coordination polymers (CPs) / metal-organic frameworks (MOFs) containing metal ions from d and 4f series and a plethora of organic ligands, the resulted compounds showing remarkable photoluminescence properties with different applications in the field light emitting devices (LEDs), biosensors in medical assays, sensors for identifying certain species (molecules, ions) and so on.

International Conference on Indium Phosphide and Related Materials

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ISBN 13 :
Total Pages : 602 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis International Conference on Indium Phosphide and Related Materials by :

Download or read book International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 2000 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Non-Epitaxial Thin-Film Indium Phosphide Photovoltaics

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ISBN 13 :
Total Pages : 82 pages
Book Rating : 4.:/5 (919 download)

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Book Synopsis Non-Epitaxial Thin-Film Indium Phosphide Photovoltaics by : Maxwell S. Zheng

Download or read book Non-Epitaxial Thin-Film Indium Phosphide Photovoltaics written by Maxwell S. Zheng and published by . This book was released on 2015 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, the photovoltaic market has grown significantly as module prices have continued to come down. Continued growth of the field requires higher efficiency modules at lower manufacturing costs. In particular, higher efficiencies reduce the area needed for a given power output, thus reducing the downstream balance of systems costs that scale with area such as mounting frames, installation, and soft costs. Cells and modules made from III-V materials have the highest demonstrated efficiencies to date but are not yet at the cost level of other thin film technologies, which has limited their large-scale deployment. There is a need for new materials growth, processing and fabrication techniques to address this major shortcoming of III-V semiconductors. Chapters 2 and 3 explore growth of InP on non-epitaxial Mo substrates by MOCVD and CSS, respectively. The results from these studies demonstrate that InP optoelectronic quality is maintained even by growth on non-epitaxial metal substrates. Structural characterization by SEM and XRD show stoichiometric InP can be grown in complete thin films on Mo. Photoluminescence measurements show peak energies and widths to be similar to those of reference wafers of similar doping concentrations. In chapter 4 the TF-VLS growth technique is introduced and cells fabricated from InP produced by this technique are characterized. The TF-VLS method results in lateral grain sizes of>500 æm and exhibits superior optoelectronic quality. First generation devices using a n-TiO2 window layer along with p-type TF-VLS grown InP have reached ~12.1% power conversion efficiency under 1 sun illumination with VOC of 692 mV, JSC of 26.9 mA/cm2, and FF of 65%. The cells are fabricated using all non-epitaxial processing. Optical measurements show the InP in these cells have the potential to support a higher VOC of ~795 mV, which can be achieved by improved device design. Chapter 5 describes a cost analysis of a manufacturing process using an InP cell as the active layer in a monolithically integrated module. Importantly, TF-VLS growth avoids the hobbles of traditional growth: the epitaxial wafer substrate, low utilization efficiency of expensive metalorganic precursors, and high capital depreciation costs due to low throughput. Production costs are projected to be $0.76/W(DC) for the benchmark case of 12% efficient modules and would decrease to $0.40/W(DC) for the long-term potential case of 24% efficient modules.

Research in Progress

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ISBN 13 :
Total Pages : 212 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Research in Progress by :

Download or read book Research in Progress written by and published by . This book was released on with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Energy Research Abstracts

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ISBN 13 :
Total Pages : 584 pages
Book Rating : 4.:/5 (3 download)

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Book Synopsis Energy Research Abstracts by :

Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt: