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Optical Effects Of Ion Implantation
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Book Synopsis Optical Effects of Ion Implantation by : P. D. Townsend
Download or read book Optical Effects of Ion Implantation written by P. D. Townsend and published by Cambridge University Press. This book was released on 1994-06-23 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the use of ion implantation to control the optical properties of solid state materials.
Book Synopsis Optical Effects of Ion Implantation Into Glass by : David Edward Hole
Download or read book Optical Effects of Ion Implantation Into Glass written by David Edward Hole and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Effects of Ion Implantation on the Optical Properties of Bismuth by : Estelle M. Kunoff
Download or read book The Effects of Ion Implantation on the Optical Properties of Bismuth written by Estelle M. Kunoff and published by . This book was released on 1985 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ion Implantation, Sputtering and Their Applications by : Peter David Townsend
Download or read book Ion Implantation, Sputtering and Their Applications written by Peter David Townsend and published by . This book was released on 1976 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization by :
Download or read book Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization written by and published by Academic Press. This book was released on 1997-06-12 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical, physical, and optical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Book Synopsis The Effects of Ion Implantation on Optical Spectra of SiO2 Glass by : John David Stark
Download or read book The Effects of Ion Implantation on Optical Spectra of SiO2 Glass written by John David Stark and published by . This book was released on 1988 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ion Implantation Science and Technology by : J.F. Ziegler
Download or read book Ion Implantation Science and Technology written by J.F. Ziegler and published by Elsevier. This book was released on 2012-12-02 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation Science and Technology: Second Edition, just like the first edition, serves as both an introduction and tutorial to the science, techniques, and machines involved in the subject. The book is divided into two parts - Part 1: Ion Implantation Science and Part 2: Ion Implantation Technology. Part 1 covers topics such as the stopping and range of ions in solids; ion implantation damage in silicon; experimental annealing and activation; and the measurement on ion implantation. Part 2 includes ion optics and focusing on implanter design; photoresist problems and particle contamination; ion implantation diagnostics and process control; and emission of ionizing radiation from ion implanters. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.
Book Synopsis Impact of Ion Implantation on Quantum Dot Heterostructures and Devices by : Arjun Mandal
Download or read book Impact of Ion Implantation on Quantum Dot Heterostructures and Devices written by Arjun Mandal and published by Springer. This book was released on 2017-06-02 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from the system. While rapid thermal annealing, pulsed laser annealing and the hydrogen passivation technique have been popular as post-growth methods, ion implantation had not been explored largely as a post-growth method for improving the material properties of In(Ga)As/GaAs QD heterostructures. This work attempts to remedy this gap in the literature. The work also looks at introduction of a capping layer of quaternary alloy InAlGaAs over these In(Ga)As/GaAs QDs to achieve better QD characteristics. The contents of this volume will prove useful to researchers and professionals involved in the study of QDs and QD-based devices.
Download or read book Ion Implantation written by Ishaq Ahmad and published by BoD – Books on Demand. This book was released on 2017-06-14 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation is one of the promising areas of sciences and technologies. It has been observed as a continuously evolving technology. In this book, there is a detailed overview of the recent ion implantation research and innovation along with the existing ion implantation technological issues especially in microelectronics. The book also reviews the basic knowledge of the radiation-induced defects production during the ion implantation in case of a semiconductor structure for fabrication and development of the required perfect microelectronic devices. The improvement of the biocompatibility of biomaterials by ion implantation, which is a hot research topic, has been summarized in the book as well. Moreover, advanced materials characterization techniques are also covered in this book to evaluate the ion implantation impact on the materials.
Book Synopsis The Basics of Ion Implantation by : Michael I. Current
Download or read book The Basics of Ion Implantation written by Michael I. Current and published by . This book was released on 1997 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation written by Mark Goorsky and published by BoD – Books on Demand. This book was released on 2012-05-30 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation presents a continuously evolving technology. While the benefits of ion implantation are well recognized for many commercial endeavors, there have been recent developments in this field. Improvements in equipment, understanding of beam-solid interactions, applications to new materials, improved characterization techniques, and more recent developments to use implantation for nanostructure formation point to new directions for ion implantation and are presented in this book.
Book Synopsis Ion Implantation: Basics to Device Fabrication by : Emanuele Rimini
Download or read book Ion Implantation: Basics to Device Fabrication written by Emanuele Rimini and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Book Synopsis Use of Ion Implantation in Electrical & Optical Property Modification of a Polymer-based Semiconductor by : Ye Zhang
Download or read book Use of Ion Implantation in Electrical & Optical Property Modification of a Polymer-based Semiconductor written by Ye Zhang and published by . This book was released on 2003 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ion Implantation by : Geoffrey Dearnaley
Download or read book Ion Implantation written by Geoffrey Dearnaley and published by North-Holland. This book was released on 1973 with total page 828 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Applications of Ion Implantation by : Michael I. Current
Download or read book Advanced Applications of Ion Implantation written by Michael I. Current and published by . This book was released on 1985 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Effects of He Ion Implantation on Optical and Structural Properties of MgAl2O4 by :
Download or read book Effects of He Ion Implantation on Optical and Structural Properties of MgAl2O4 written by and published by . This book was released on 1999 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single crystals of magnesium-aluminate spinel were implanted with 170 keV He ions to fluences ranging from 1 x 1016--1 x 1021 ions/m2 at 120 K. The effects of ion implantation were studied using optical absorption spectroscopy, Rutherford Backscattering Spectroscopy and Ion Channeling (RBS/C) and Transmission Electron Microscopy (TEM). In absorption spectra obtained from the implanted samples, growth of an F-center band at 5.3 eV was observed. At the fluence of 3 x 102° ions/m2, the growth of this band not only ceases but the intensity suddenly decreases. This may be due to formation of a new phase at this fluence. This is partially confirmed by the fact that beginning at this dose, a modulated absorbance becomes apparent in the absorption spectrum of spinel. This effect is caused by formation of a buried layer with refraction index lower than that of an unimplanted sample. RBS/C and TEM measurements show that spinel is not amorphized over the fluence range examined in this study. TEM microdiffraction observations show that in the damaged region the intensities of superlattice spots decrease significantly, suggesting that ion beam irradiation induces either an order-disorder phase transition or a transformation into the so-called ''metastable'' phase of spinel.
Book Synopsis Ion Implantation in Semiconductors and Other Materials by : Billy Crowder
Download or read book Ion Implantation in Semiconductors and Other Materials written by Billy Crowder and published by Springer Science & Business Media. This book was released on 2013-03-13 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch Partenkirchen, Germany, in 1971. At the present time, our under standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.
