Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Operation Memories
Download Operation Memories full books in PDF, epub, and Kindle. Read online Operation Memories ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Operation Memories by : Evelyn I. Gregory
Download or read book Operation Memories written by Evelyn I. Gregory and published by . This book was released on 1995 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: True WWII biographies. Oral interviews given by 50 men & women about their unique WWII experiences. Fascinating stories, many never published before. From old notes, logs, diaries & unpublished manuscripts. Pearl Harbor. Hiroshima. Kassarine Pass. Normandy. China-Burma-India...flying over the hump. Stories about a disastrous secret invasion (Devon Invasion). The very first radar installations. Marines guarding President Roosevelt. An admiral disappears (forever). Discovery of old masters paintings hidden by German military. Stories from six continents, every ocean. Compelling thoughts of foot soldiers dismantling mines. Gunfire at a conference with General "Hap" Arnold. The U.S. Navy ships real gold. Stalag 17 secret death march log. "Milk Run" by an injured pilot. Bloody invasions in the South Pacific. Navigating Lindbergh himself. Movie stars. Glen Miller. VJ & VE Days celebrated worldwide. Holocaust museum's vice chairman loses 40 family members...from his childhood at Auschwitz to being a speaker at the Capitol rotunda. Submariners in battle. Typhoons. How survivors led admirable lives, educated themselves. Order from Senior Distributors, P.O. Box 185, Vineburg, CA 95487.
Book Synopsis Borders and Memories by : Katarzyna Stoklosa
Download or read book Borders and Memories written by Katarzyna Stoklosa and published by LIT Verlag Münster. This book was released on 2019-04 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: Borders and border regions are shaped by many phenomena connected with both co-operation and conflict. The neighbourhood, cross-border contacts, illegal migration, border crossings, prejudices and stereotypes, border guards, and perceptions of borders are some of the key words that characterize the articles in this volume. The book deals with European border regions that have experienced numerous changes over the 20th century. Because of this changeable, frequently painful past, different human stories – mostly tragic or romanticized – individual and collective memories, mythologies with heroes, and divergent perceptions of history developed. Most authors in this volume deal with conflicts and co-operation that can either be remembered or forgotten.
Download or read book Flash Memories written by Detlev Richter and published by Springer Science & Business Media. This book was released on 2013-09-12 with total page 287 pages. Available in PDF, EPUB and Kindle. Book excerpt: The subject of this book is to introduce a model-based quantitative performance indicator methodology applicable for performance, cost and reliability optimization of non-volatile memories. The complex example of flash memories is used to introduce and apply the methodology. It has been developed by the author based on an industrial 2-bit to 4-bit per cell flash development project. For the first time, design and cost aspects of 3D integration of flash memory are treated in this book. Cell, array, performance and reliability effects of flash memories are introduced and analyzed. Key performance parameters are derived to handle the flash complexity. A performance and array memory model is developed and a set of performance indicators characterizing architecture, cost and durability is defined. Flash memories are selected to apply the Performance Indicator Methodology to quantify design and technology innovation. A graphical representation based on trend lines is introduced to support a requirement based product development process. The Performance Indicator methodology is applied to demonstrate the importance of hidden memory parameters for a successful product and system development roadmap. Flash Memories offers an opportunity to enhance your understanding of product development key topics such as: · Reliability optimization of flash memories is all about threshold voltage margin understanding and definition; · Product performance parameter are analyzed in-depth in all aspects in relation to the threshold voltage operation window; · Technical characteristics are translated into quantitative performance indicators; · Performance indicators are applied to identify and quantify product and technology innovation within adjacent areas to fulfill the application requirements with an overall cost optimized solution; · Cost, density, performance and durability values are combined into a common factor – performance indicator - which fulfills the application requirements
Download or read book Flash Memories written by Igor Stievano and published by BoD – Books on Demand. This book was released on 2011-09-06 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: Flash memories and memory systems are key resources for the development of electronic products implementing converging technologies or exploiting solid-state memory disks. This book illustrates state-of-the-art technologies and research studies on Flash memories. Topics in modeling, design, programming, and materials for memories are covered along with real application examples.
Book Synopsis CMOS Processors and Memories by : Krzysztof Iniewski
Download or read book CMOS Processors and Memories written by Krzysztof Iniewski and published by Springer Science & Business Media. This book was released on 2010-08-09 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS Processors and Memories addresses the-state-of-the-art in integrated circuit design in the context of emerging computing systems. New design opportunities in memories and processor are discussed. Emerging materials that can take system performance beyond standard CMOS, like carbon nanotubes, graphene, ferroelectrics and tunnel junctions are explored. CMOS Processors and Memories is divided into two parts: processors and memories. In the first part we start with high performance, low power processor design, followed by a chapter on multi-core processing. They both represent state-of-the-art concepts in current computing industry. The third chapter deals with asynchronous design that still carries lots of promise for future computing needs. At the end we present a “hardware design space exploration” methodology for implementing and analyzing the hardware for the Bayesian inference framework. This particular methodology involves: analyzing the computational cost and exploring candidate hardware components, proposing various custom architectures using both traditional CMOS and hybrid nanotechnology CMOL. The first part concludes with hybrid CMOS-Nano architectures. The second, memory part covers state-of-the-art SRAM, DRAM, and flash memories as well as emerging device concepts. Semiconductor memory is a good example of the full custom design that applies various analog and logic circuits to utilize the memory cell’s device physics. Critical physical effects that include tunneling, hot electron injection, charge trapping (Flash memory) are discussed in detail. Emerging memories like FRAM, PRAM and ReRAM that depend on magnetization, electron spin alignment, ferroelectric effect, built-in potential well, quantum effects, and thermal melting are also described. CMOS Processors and Memories is a must for anyone serious about circuit design for future computing technologies. The book is written by top notch international experts in industry and academia. It can be used in graduate course curriculum.
Book Synopsis Nonvolatile Memories 4 by : S. Shingubara
Download or read book Nonvolatile Memories 4 written by S. Shingubara and published by The Electrochemical Society. This book was released on 2015 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dad's Best Memories and Recollections by : Charles J. Humber
Download or read book Dad's Best Memories and Recollections written by Charles J. Humber and published by FriesenPress. This book was released on 2016-01-20 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: DAD’S BEST MEMORIES AND RECOLLECTIONS is Chazzz Humber’s epithaph casting a very long and sentimental shadow across North America and beyond. This 230-page volume is his granite monument, well-polished! It lavishly records 125 of his best memories over a life-span of nearly eighty years. The vignettes are serenaded with more than 400 illustrations. Those discovering this volume likely will find themselves wanting to record, in their own sunset years, their personal memories and recollections. And when they do, they are apt to recall what it was like to live in their fluctuating world dominated by a variety of personalities and cascading events. Mr. Humber vividly describes what it was like, in 1945, to travel in a 1930 Model A Ford from Toronto to Boston. With lively enthusiasm, he reports what it was like to live in post-World War II Boston, to cook a lobster for a former President of the United States or to sell a pair of elevator shoes to one of Hollywood’s shortest celebrities or to shine the shoes of a Derby-hatted father of a future President of the United States. It is not a remarkable achievement to reflect, to recall or to have memories that are treasured. But to tell them with literary aplomb, to recall the events that happened nearly seventy-five years ago with utmost clarity is definitely an admirable achievement and should be cherished not only by the kin who follow Mr. Humber but by those who might like to imitate what he has monumentally achieved in Dad’s Best Memories and Recollections.
Book Synopsis Content-Addressable Memories by : Teuvo Kohonen
Download or read book Content-Addressable Memories written by Teuvo Kohonen and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to continual progress in the large-scale integration of semiconductor circuits, parallel computing principles can already be met in low-cost sys tems: numerous examples exist in image processing, for which special hard ware is implementable with quite modest resources even by nonprofessional designers. Principles of content addressing, if thoroughly understood, can thereby be applied effectively using standard components. On the other hand, mass storage based on associative principles still exists only in the long term plans of computer technologists. This situation is somewhat confused by the fact that certain expectations are held for the development of new storage media such as optical memories and "spin glasses" (metal alloys with low-density magnetic impurities). Their technologies, however, may not ripen until after "fifth generation" computers have been built. It seems that software methods for content addressing, especially those based on hash coding principles, are still holding their position firmly, and a few innovations have been developed recently. As they need no special hardware, one might expect that they will spread to a wide circle of users. This monograph is based on an extensive literature survey, most of which was published in the First Edition. I have added Chap. ?, which contains a review of more recent work. This updated book now has references to over 1200 original publications. In the editing of the new material, I received valuable help from Anneli HeimbUrger, M. Sc. , and Mrs. Leila Koivisto.
Book Synopsis Semiconductor Memories and Systems by : Andrea Redaelli
Download or read book Semiconductor Memories and Systems written by Andrea Redaelli and published by Woodhead Publishing. This book was released on 2022-06-07 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability.Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. - Features contributions from experts from leading companies in semiconductor memory - Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories - Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory - Includes emerging storage class memory technologies such as phase change memory
Book Synopsis High Performance Memory Testing by : R. Dean Adams
Download or read book High Performance Memory Testing written by R. Dean Adams and published by Springer Science & Business Media. This book was released on 2005-12-29 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: Are memory applications more critical than they have been in the past? Yes, but even more critical is the number of designs and the sheer number of bits on each design. It is assured that catastrophes, which were avoided in the past because memories were small, will easily occur if the design and test engineers do not do their jobs very carefully. High Performance Memory Testing: Design Principles, Fault Modeling and Self Test is based on the author's 20 years of experience in memory design, memory reliability development and memory self test. High Performance Memory Testing: Design Principles, Fault Modeling and Self Test is written for the professional and the researcher to help them understand the memories that are being tested.
Book Synopsis Flash Memories by : Paulo Cappelletti
Download or read book Flash Memories written by Paulo Cappelletti and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].
Book Synopsis Official Gazette of the United States Patent and Trademark Office by : United States. Patent and Trademark Office
Download or read book Official Gazette of the United States Patent and Trademark Office written by United States. Patent and Trademark Office and published by . This book was released on 2002 with total page 1404 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Inside NAND Flash Memories by : Rino Micheloni
Download or read book Inside NAND Flash Memories written by Rino Micheloni and published by Springer Science & Business Media. This book was released on 2010-07-27 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Digital photography, MP3, digital video, etc. make extensive use of NAND-based Flash cards as storage media. To realize how much NAND Flash memories pervade every aspect of our life, just imagine how our recent habits would change if the NAND memories suddenly disappeared. To take a picture it would be necessary to find a film (as well as a traditional camera...), disks or even magnetic tapes would be used to record a video or to listen a song, and a cellular phone would return to be a simple mean of communication rather than a multimedia console. The development of NAND Flash memories will not be set down on the mere evolution of personal entertainment systems since a new killer application can trigger a further success: the replacement of Hard Disk Drives (HDDs) with Solid State Drives (SSDs). SSD is made up by a microcontroller and several NANDs. As NAND is the technology driver for IC circuits, Flash designers and technologists have to deal with a lot of challenges. Therefore, SSD (system) developers must understand Flash technology in order to exploit its benefits and countermeasure its weaknesses. Inside NAND Flash Memories is a comprehensive guide of the NAND world: from circuits design (analog and digital) to Flash reliability (including radiation effects), from testing issues to high-performance (DDR) interface, from error correction codes to NAND applications like Flash cards and SSDs.
Book Synopsis Machine Learning and Non-volatile Memories by : Rino Micheloni
Download or read book Machine Learning and Non-volatile Memories written by Rino Micheloni and published by Springer Nature. This book was released on 2022-05-25 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the basics of both NAND flash storage and machine learning, detailing the storage problems the latter can help to solve. At a first sight, machine learning and non-volatile memories seem very far away from each other. Machine learning implies mathematics, algorithms and a lot of computation; non-volatile memories are solid-state devices used to store information, having the amazing capability of retaining the information even without power supply. This book will help the reader understand how these two worlds can work together, bringing a lot of value to each other. In particular, the book covers two main fields of application: analog neural networks (NNs) and solid-state drives (SSDs). After reviewing the basics of machine learning in Chapter 1, Chapter 2 shows how neural networks can mimic the human brain; to accomplish this result, neural networks have to perform a specific computation called vector-by-matrix (VbM) multiplication, which is particularly power hungry. In the digital domain, VbM is implemented by means of logic gates which dictate both the area occupation and the power consumption; the combination of the two poses serious challenges to the hardware scalability, thus limiting the size of the neural network itself, especially in terms of the number of processable inputs and outputs. Non-volatile memories (phase change memories in Chapter 3, resistive memories in Chapter 4, and 3D flash memories in Chapter 5 and Chapter 6) enable the analog implementation of the VbM (also called “neuromorphic architecture”), which can easily beat the equivalent digital implementation in terms of both speed and energy consumption. SSDs and flash memories are strictly coupled together; as 3D flash scales, there is a significant amount of work that has to be done in order to optimize the overall performances of SSDs. Machine learning has emerged as a viable solution in many stages of this process. After introducing the main flash reliability issues, Chapter 7 shows both supervised and un-supervised machine learning techniques that can be applied to NAND. In addition, Chapter 7 deals with algorithms and techniques for a pro-active reliability management of SSDs. Last but not least, the last section of Chapter 7 discusses the next challenge for machine learning in the context of the so-called computational storage. No doubt that machine learning and non-volatile memories can help each other, but we are just at the beginning of the journey; this book helps researchers understand the basics of each field by providing real application examples, hopefully, providing a good starting point for the next level of development.
Book Synopsis Testing Static Random Access Memories by : Said Hamdioui
Download or read book Testing Static Random Access Memories written by Said Hamdioui and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 231 pages. Available in PDF, EPUB and Kindle. Book excerpt: Testing Static Random Access Memories covers testing of one of the important semiconductor memories types; it addresses testing of static random access memories (SRAMs), both single-port and multi-port. It contributes to the technical acknowledge needed by those involved in memory testing, engineers and researchers. The book begins with outlining the most popular SRAMs architectures. Then, the description of realistic fault models, based on defect injection and SPICE simulation, are introduced. Thereafter, high quality and low cost test patterns, as well as test strategies for single-port, two-port and any p-port SRAMs are presented, together with some preliminary test results showing the importance of the new tests in reducing DPM level. The impact of the port restrictions (e.g., read-only ports) on the fault models, tests, and test strategies is also discussed. Features: -Fault primitive based analysis of memory faults, -A complete framework of and classification memory faults, -A systematic way to develop optimal and high quality memory test algorithms, -A systematic way to develop test patterns for any multi-port SRAM, -Challenges and trends in embedded memory testing.
Book Synopsis Error Correction Codes for Non-Volatile Memories by : Rino Micheloni
Download or read book Error Correction Codes for Non-Volatile Memories written by Rino Micheloni and published by Springer Science & Business Media. This book was released on 2008-06-03 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nowadays it is hard to find an electronic device which does not use codes: for example, we listen to music via heavily encoded audio CD's and we watch movies via encoded DVD's. There is at least one area where the use of encoding/decoding is not so developed, yet: Flash non-volatile memories. Flash memory high-density, low power, cost effectiveness, and scalable design make it an ideal choice to fuel the explosion of multimedia products, like USB keys, MP3 players, digital cameras and solid-state disk. In ECC for Non-Volatile Memories the authors expose the basics of coding theory needed to understand the application to memories, as well as the relevant design topics, with reference to both NOR and NAND Flash architectures. A collection of software routines is also included for better understanding. The authors form a research group (now at Qimonda) which is the typical example of a fruitful collaboration between mathematicians and engineers.
Book Synopsis Gate Stack Engineering for Emerging Polarization based Non-volatile Memories by : Milan Pesic
Download or read book Gate Stack Engineering for Emerging Polarization based Non-volatile Memories written by Milan Pesic and published by BoD – Books on Demand. This book was released on 2017-07-14 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories make them promising candidates for non-volatile memories that would bridge the speed gap between fast logic and slow off-chip, long term storage. Even though the retention of hafnia based ferroelectric memories can be extrapolated to a ten-year specification target, they suffer from a rather limited endurance. Therefore, this work targets relating the field cycling behavior of hafnia based ferroelectric memories to the physical mechanisms taking place within the film stack. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for novel, superior devices. In the frame of this work, an in-depth ferroelectric and dielectric characterization, analysis and TEM study was combined with comprehensive modeling approach. Drift and diffusion based vacancy redistribution was found as the main cause for the phase transformation and consequent increase of the remnant polarization, while domain pinning and defect generation is identified to be responsible for the device fatigue. Finally, based on Landau theory, a simple way to utilize the high endurance strength of anti-ferroelectric (AFE) materials and achieve non-volatility in state-of-the-art DRAM stacks was proposed and the fabrication of the world's first non-volatile AFE-RAM is reported. These findings represent an important milestone and pave the way toward a commercialization of (anti)ferroelectric non-volatile memories based on simple binary-oxides.
