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On The Relationship Between Carrier Mobility And Velocity In Sub 50 Mm Mosfets Via Calibrated Monte Carlo Simulation
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Book Synopsis On the Relationship Between Carrier Mobility and Velocity in Sub-50 Mm MOSFETs Via Calibrated Monte Carlo Simulation by : Osama Munir Nayfeh
Download or read book On the Relationship Between Carrier Mobility and Velocity in Sub-50 Mm MOSFETs Via Calibrated Monte Carlo Simulation written by Osama Munir Nayfeh and published by . This book was released on 2004 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt: Subsequent to accurate 2D inverse modeling in the regime sensitive to electrostatics of industrial sub-50 nm NMOSFETs, a 2D full-band Monte Carlo device simulator was calibrated in the regime sensitive to transport parameters. The relationship between electron mobility and high-electric-field velocity at the source-channel potential energy barrier was investigated. The results show a strong correlation, as was demonstrated previously experimentally. Moreover, further proof is provided that the velocity at which carriers are injected from the source region in modem NMOSFET's is only about half of the limiting thermal velocity.
Book Synopsis Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim by : Tatsuya Ezaki
Download or read book Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim written by Tatsuya Ezaki and published by World Scientific. This book was released on 2008-06-03 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
Book Synopsis The Monte Carlo Method for Semiconductor Device Simulation by : Carlo Jacoboni
Download or read book The Monte Carlo Method for Semiconductor Device Simulation written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.
Book Synopsis The Physics and Modeling of Mosfets by : Mitiko Miura-Mattausch
Download or read book The Physics and Modeling of Mosfets written by Mitiko Miura-Mattausch and published by World Scientific. This book was released on 2008 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
Book Synopsis Monte Carlo Device Simulation by : Karl Hess
Download or read book Monte Carlo Device Simulation written by Karl Hess and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.
Book Synopsis Comprehensive Inverse Modeling for the Study of Carrier Transport Models in Sub-50nm MOSFETs by : Ihsan Jahed Djomehri
Download or read book Comprehensive Inverse Modeling for the Study of Carrier Transport Models in Sub-50nm MOSFETs written by Ihsan Jahed Djomehri and published by . This book was released on 2002 with total page 139 pages. Available in PDF, EPUB and Kindle. Book excerpt: (Cont.) The important application of this technique is in the calibration of carrier transport models. With an accurate device topology, the transport model parameters can be adjusted to predict the onstate behavior. Utilizing a mobility model that conforms to the experimental effective field dependence and including a correction for parasitic resistance, the transport model for an advanced NMOS generation at various gate lengths and voltages is calibrated. Employing the Energy Balance model yields an energy relaxation value valid over all devices examined in this work. Furthermore, what has been learned from profile and transport calibration is used in investigating optimal paths for sub-20 nm MOSFET scaling. In a study of candidate architectures such as double-gate, single-gate, and bulk-Si, metrics for the power versus performance trade-off were developed. To conclude, the best trade-off was observed by scaling as a function of gate length with a single near-mid-gap workfunction.
Book Synopsis Full-band Monte Carlo Simulation of Nanoscale Strained Silicon MOSFETs by : Fabian M. Bufler
Download or read book Full-band Monte Carlo Simulation of Nanoscale Strained Silicon MOSFETs written by Fabian M. Bufler and published by . This book was released on 2003 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Optimization of Nanoscale MOSFET with Schottky Barrier Contacts Using Monte Carlo Simulation by : Maneesh Madhav Shanbhag
Download or read book Optimization of Nanoscale MOSFET with Schottky Barrier Contacts Using Monte Carlo Simulation written by Maneesh Madhav Shanbhag and published by . This book was released on 2002 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Hole Transport in Strained SiGe-channel MOSFETs by : Leonardo Gomez (Ph. D.)
Download or read book Hole Transport in Strained SiGe-channel MOSFETs written by Leonardo Gomez (Ph. D.) and published by . This book was released on 2010 with total page 167 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 90 nm CMOS technology node, geometric scaling of CMOS has been supplemented with strain to boost transistor drive current. Future CMOS technology nodes (i.e. beyond the 32 nm node) will require more significant changes to continue improvements in transistor performance. Novel CMOS channel materials and device architectures are one option for enhancing carrier transport and increasing device performance. In this work strained SiGe and Ge are examined as a means of increasing the drive current in deeply scaled CMOS. As part of this work a novel high mobility strained-Ge on-insulator substrate has been developed, and the hole transport characteristics of short channel and asymmetrically strained-SiGe channel p-MOSFETs have been explored. A thin-body biaxial compressive strained-Si/strained-Ge heterostructure on-insulator (HOI) substrate has been developed, which combines the electrostatic benefits of the thin-body architecture with the transport benefits of biaxial compressive strain. A novel Germanium on Silicon growth method and a low temperature bond and etch-back process have been developed to enable Ge HOI fabrication. P-MOSFETs were also fabricated using these substrates and the hole mobility characteristics were studied. The hole mobility and velocity characteristics of short channel biaxial compressive strained-Si 45 Geo. 55 p-MOSFETs on-insulator have also been examined. Devices with gate lengths down to 65 nm were fabricated. The short channel mobility characteristics were extracted and a 2.4x hole mobility enhancement relative to relaxed-Si was observed. The measured hole velocity enhancement is more modest at about 1.2x. Band structure and ballistic velocity simulations suggest that a more substantial velocity improvement can be expected with the incorporation of added longitudinal uniaxial compressive strain in the SiGe channel. The hole mobility characteristics of biaxial strained SiGe and Ge p-MOSFETs with applied uniaxial strain are also studied. The hole mobility in biaxial compressive strained SiGe is already enhanced relative to relaxed Si. It is observed that this mobility enhancement increases further with the application of 110 longitudinal uniaxial compressive strain. Since hole mobility and velocity are correlated through their dependence on the hole effective mass, a mass driven increase in mobility with applied uniaxial strain should result in an increase in velocity. Simulations have also been performed to estimate the hole effective mass change in asymmetric strained SiGe. Finally the piezo resistance coefficients of strained SiGe are extracted and found to be larger than in Si.
Book Synopsis Optimal Metal Oxide Semiconductor Field-effect Transistors Design for Low Temperature Operation by : Keith Matthew Jackson
Download or read book Optimal Metal Oxide Semiconductor Field-effect Transistors Design for Low Temperature Operation written by Keith Matthew Jackson and published by . This book was released on 2001 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Monte Carlo Study of Current Variability in UTB SOI DG MOSFETs by : Craig Riddet
Download or read book Monte Carlo Study of Current Variability in UTB SOI DG MOSFETs written by Craig Riddet and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The scaling of conventional silicon based MOSFETs is increasingly difficult into the nanometer regime due to short channel effects, tunneling and subthreshold leakage current. Ultra-thin body silicon-on-insulator based architectures offer a promising alternative, alleviating these problems through their geometry. However, the transport behaviour in these devices is more complex, especially for silicon thicknesses below 10 nm, with enhancement from band splitting and volume inversion competing with scattering from phonons, Coulomb interactions, interface roughness and body thickness fluctuation. Here, the effect of the last scattering mechanism on the drive current is examined as it is considered a significant limitation to device performance for body thicknesses below 5 nm. A simulation technique that properly captures non-equilibrium transport, includes quantum effects and maintains computational efficiency is essential for the study of this scattering mechanism. Therefore, a 3D Monte Carlo simulator has been developed which includes this scattering effect in an ab initio fashion, and quantum corrections using the Density Gradient formalism. Monte Carlo simulations using Hfrozen field approximation have been carried out to examine the dependence of mobility on silicon thickness in large, self averaging devices. This approximation is then used to carry out statistical studies of uniquely different devices to examine the variability of on-current. Finally, Monte Carlo simulations self consistent with Poisson s equation have been carried out to further investigate this mechanism.
Download or read book Ceramic Abstracts written by and published by . This book was released on 2000 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Technology Computer Aided Design by : Chandan Kumar Sarkar
Download or read book Technology Computer Aided Design written by Chandan Kumar Sarkar and published by CRC Press. This book was released on 2018-09-03 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
Book Synopsis Mosfet Modeling For Circuit Analysis And Design by : Carlos Galup-montoro
Download or read book Mosfet Modeling For Circuit Analysis And Design written by Carlos Galup-montoro and published by World Scientific. This book was released on 2007-02-27 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Book Synopsis Industry Standard FDSOI Compact Model BSIM-IMG for IC Design by : Chenming Hu
Download or read book Industry Standard FDSOI Compact Model BSIM-IMG for IC Design written by Chenming Hu and published by Woodhead Publishing. This book was released on 2019-05-22 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.
Book Synopsis Compact Modeling by : Gennady Gildenblat
Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Book Synopsis Analysis and Simulation of Semiconductor Devices by : S. Selberherr
Download or read book Analysis and Simulation of Semiconductor Devices written by S. Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
