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Ohmic Contacts To Gallium Arsenide
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Book Synopsis Ohmic Contacts to Gallium Arsenide by : Salvatore Pablo Lucia
Download or read book Ohmic Contacts to Gallium Arsenide written by Salvatore Pablo Lucia and published by . This book was released on 1985 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contacts for Gallium Arsenide Devices by : Kenneth L. Klohn
Download or read book Ohmic Contacts for Gallium Arsenide Devices written by Kenneth L. Klohn and published by . This book was released on 1968 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: A study was made of various metals and metal alloys (Ag, Ni, In, and Au-Zn) which would make ohmic contacts to p- or n-type GaAs to determine the value of contact resistivity as a function of substrate impurity concentration. Contact resistivity values for p-type material varied from 1.2 x 10 to the -4th power ohm-cm sq for 2.8 x 10 to the 17th power/cc to 7.3 x 10 to the -7th ohm-cm sq for 9 x 10 to the 19th power/cc, and for n-type material from 2.5 x 10 to the -4th power ohm-cm sq for 1 x 10 to the 17th power/cc to 1.5 x 10 to the -5th power ohm-cm sq for 3 x 10 to the 18th power/cc. The metals were applied by evaporation or plating and followed by microalloying. The improvement in contact resistivity, as substrate impurity concentration increases, indicates the desirability of incorporating a thin, heavily doped region at the surface of a device by means of diffusion or epitaxy. The improvement in power output for a typical laser diode and its modified versions resulting from the reduction in R sub s is compared. (Author).
Book Synopsis Ohmic Contacts to N-type Aluminum Gallium Arsenide (Al[subscript X]Gá́[subscript X]As, O[lesser Than Or Equal To]x[lesser Than Or Equal To]0.3) Utilizing Limited Solid-phase Reactions by : Eric David Marshall
Download or read book Ohmic Contacts to N-type Aluminum Gallium Arsenide (Al[subscript X]Gá́[subscript X]As, O[lesser Than Or Equal To]x[lesser Than Or Equal To]0.3) Utilizing Limited Solid-phase Reactions written by Eric David Marshall and published by . This book was released on 1989 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Specific Contact Resistance of Ohmic Contacts to Gallium Arsenide by : Communications Research Centre (Canada)
Download or read book Specific Contact Resistance of Ohmic Contacts to Gallium Arsenide written by Communications Research Centre (Canada) and published by . This book was released on 1972 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contacts to Gallium Arsenide by : L. K. Mak
Download or read book Ohmic Contacts to Gallium Arsenide written by L. K. Mak and published by . This book was released on 1983 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contacts to Gallium Arsenide by : C. M. Rogers
Download or read book Ohmic Contacts to Gallium Arsenide written by C. M. Rogers and published by . This book was released on 1988 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contacts to Semiconductors by : Electrochemical Society
Download or read book Ohmic Contacts to Semiconductors written by Electrochemical Society and published by . This book was released on 1969 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Extremely Low Resistance Non-alloyed Ohmic Contacts on Gallium Arsenide by Molecular Beam Epitaxy by : Swaminathan Sivakumar
Download or read book Extremely Low Resistance Non-alloyed Ohmic Contacts on Gallium Arsenide by Molecular Beam Epitaxy written by Swaminathan Sivakumar and published by . This book was released on 1989 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A TEM Study of Ohmic Contacts on Gallium Arsenide by :
Download or read book A TEM Study of Ohmic Contacts on Gallium Arsenide written by and published by . This book was released on 1990 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Development and Application of Nonspiking Ohmic Contacts Formed by Solid-phase Reactions to N-type Gallium Arsenide by : Long-Ching Wang
Download or read book The Development and Application of Nonspiking Ohmic Contacts Formed by Solid-phase Reactions to N-type Gallium Arsenide written by Long-Ching Wang and published by . This book was released on 1991 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Comparative Electrical Characteristics of Rapid Thermal Annealed Ohmic Contacts to Gallium Arsenide by : Michael Bernard Brooks
Download or read book Comparative Electrical Characteristics of Rapid Thermal Annealed Ohmic Contacts to Gallium Arsenide written by Michael Bernard Brooks and published by . This book was released on 1992 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contacts to N-gallium Arsenide Using Indium on Gold Via a Heterojunction by : Wai Fai Yee
Download or read book Ohmic Contacts to N-gallium Arsenide Using Indium on Gold Via a Heterojunction written by Wai Fai Yee and published by . This book was released on 1988 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Development of High Temperature Ohmic Contacts to Gallium Arsenide for VLSI Applications by : David W. Moss
Download or read book Development of High Temperature Ohmic Contacts to Gallium Arsenide for VLSI Applications written by David W. Moss and published by . This book was released on 1992 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contacts to Gallium Aluminum Arsenide for High Temperature Applications by :
Download or read book Ohmic Contacts to Gallium Aluminum Arsenide for High Temperature Applications written by and published by . This book was released on 1988 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: A new approach for fabricating nonalloyed ohmic contacts to gallium arsenide was developed. The approach uses ultrathin layers of heavily doped germanium or silicon in contact with gallium arsenide to alter the Schottky barrier height(phi B) at the gallium arsenide interface. For n-type gallium arsenide phi B could be varied from about 0.3 to 1.0 eV. The low barriers are useful for tunneling ohmic contacts to n-gallium arsenide while the high barriers should be useful for p-gallium arsenide ohmic contacts and for Field Effect Transistor (FET) gate applications. In some instances it was necessary to interpose a thin nonmetallic electrically conducting barrier between the contact metal and the thin germanium or silicon layer to preserve optimum contact properties. Specific contact resistivity measurements indicated that contact resistivity
Book Synopsis Ohmic Contacts for Compound Semiconductors by : Dan Zhang
Download or read book Ohmic Contacts for Compound Semiconductors written by Dan Zhang and published by . This book was released on 2000 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Deposition of Gallium Arsenide Films and Formation of Ohmic Contacts by : Chu-Ping Wang
Download or read book Deposition of Gallium Arsenide Films and Formation of Ohmic Contacts written by Chu-Ping Wang and published by . This book was released on 1977 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Annealed Indium Oxide/Gallium Arsenide Heterojunctions for Transparent Ohmic Contacts to Gallium Arsenide by : Thomas John Cunningham
Download or read book Annealed Indium Oxide/Gallium Arsenide Heterojunctions for Transparent Ohmic Contacts to Gallium Arsenide written by Thomas John Cunningham and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: