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Neutron Transmutation Doping Of Semiconductor Materials
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Book Synopsis Neutron Transmutation Doping of Semiconductor Materials by : Robert D. Larrabee
Download or read book Neutron Transmutation Doping of Semiconductor Materials written by Robert D. Larrabee and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
Book Synopsis Neutron Transmutation Doping in Semiconductors by : J. Meese
Download or read book Neutron Transmutation Doping in Semiconductors written by J. Meese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.
Book Synopsis Fabrication of Semiconductor Devices by Neutron Transmutation Doping by :
Download or read book Fabrication of Semiconductor Devices by Neutron Transmutation Doping written by and published by . This book was released on 1962-12 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Effects in Advanced Semiconductor Materials and Devices by : C. Claeys
Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Book Synopsis Nuclear Methods in Semiconductor Physics by : G. Langouche
Download or read book Nuclear Methods in Semiconductor Physics written by G. Langouche and published by Elsevier. This book was released on 1992-04-01 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: The two areas of experimental research explored in this volume are: the Hyperfine Interaction Methods, focusing on the microscopic configuration surrounding radioactive probe atoms in semiconductors, and Ion Beam Techniques using scattering, energy loss and channeling properties of highly energetic ions penetrating in semiconductors. A large area of interesting local defect studies is discussed. Less commonly used methods in the semiconductor field, such as nuclear magnetic resonance, electron nuclear double resonance, muon spin resonance and positron annihilation, are also reviewed. The broad scope of the contributions clearly demonstrates the growing interest in the use of sometimes fairly unconventional nuclear methods in the field of semiconductor physics.
Author :Vladimir G. Plekhanov Publisher :Springer Science & Business Media ISBN 13 :3642287239 Total Pages :299 pages Book Rating :4.6/5 (422 download)
Book Synopsis Isotopes in Condensed Matter by : Vladimir G. Plekhanov
Download or read book Isotopes in Condensed Matter written by Vladimir G. Plekhanov and published by Springer Science & Business Media. This book was released on 2012-08-10 with total page 299 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a concise introduction to the newly created sub-discipline of solid state physics isotopetronics. The role of isotopes in materials and their properties are describe in this book. The problem of the enigma of the atomic mass in microphysics is briefly discussed. The range of the applications of isotopes is wide: from biochemical process in living organisms to modern technical applications in quantum information. Isotopetronics promises to improve nanoelectronic and optoelectronic devices. With numerous illustrations this book is useful to researchers, engineers and graduate students.
Book Synopsis Dopants and Defects in Semiconductors by : Matthew D. McCluskey
Download or read book Dopants and Defects in Semiconductors written by Matthew D. McCluskey and published by CRC Press. This book was released on 2012-02-23 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy. By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors.
Book Synopsis Library of Congress Subject Headings by : Library of Congress
Download or read book Library of Congress Subject Headings written by Library of Congress and published by . This book was released on 2013 with total page 1164 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Isotopes and Radiation Technology by :
Download or read book Isotopes and Radiation Technology written by and published by . This book was released on 1964 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nuclear Energy by : Raymond L. Murray
Download or read book Nuclear Energy written by Raymond L. Murray and published by Butterworth-Heinemann. This book was released on 2001 with total page 517 pages. Available in PDF, EPUB and Kindle. Book excerpt: Energy -- Atoms and nuclei -- Radioactivity -- Nuclear processes -- Radiation and materials -- Fission -- Fusion -- Particle accelerators -- Isotope separators -- Radiation detectors -- Neutron chain reactions -- Nuclear heat energy -- Breeder reactors -- Fusion reactors -- The history of nuclear energy -- Biological effects of radiation -- Information from isotopes -- Useful radiation effects -- Reactor safety -- Nuclear propulsion -- Radiation protection -- Radioactive waste disposal -- Laws, regulations, and organizations -- Energy economics -- International nuclear power -- Nuclear explosions -- The future.
Book Synopsis Dopants and Defects in Semiconductors, Second Edition by : Matthew D. McCluskey
Download or read book Dopants and Defects in Semiconductors, Second Edition written by Matthew D. McCluskey and published by CRC Press. This book was released on 2018-02-19 with total page 475 pages. Available in PDF, EPUB and Kindle. Book excerpt: Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ?Materials Today "... well written, with clear, lucid explanations ..." ?Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.
Book Synopsis Silicon Devices and Process Integration by : Badih El-Kareh
Download or read book Silicon Devices and Process Integration written by Badih El-Kareh and published by Springer Science & Business Media. This book was released on 2009-01-09 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author’s industrial and academic lecture notes and reflects years of experience in the development of silicon devices. Features include: A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon; State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS; CMOS-only applications, such as subthreshold current and parasitic latch-up; Advanced Enabling processes and process integration. This book is written for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.
Download or read book NBS Special Publication written by and published by . This book was released on 1965 with total page 764 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Library of Congress Subject Headings by : Library of Congress. Cataloging Policy and Support Office
Download or read book Library of Congress Subject Headings written by Library of Congress. Cataloging Policy and Support Office and published by . This book was released on 2009 with total page 1924 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Semiconductor Processing by : Dinesh C. Gupta
Download or read book Semiconductor Processing written by Dinesh C. Gupta and published by ASTM International. This book was released on 1984 with total page 673 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Neutron-Transmutation-Doped Silicon by : Jens Guldberg
Download or read book Neutron-Transmutation-Doped Silicon written by Jens Guldberg and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 493 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
Download or read book TID. written by and published by . This book was released on 19?? with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt:
