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Author : D. Alexiev
Publisher :
ISBN 13 : 9780642598776
Total Pages : 11 pages
Book Rating : 4.5/5 (987 download)
Download or read book Neutron Transmutation Doping of Gallium Arsenide written by D. Alexiev and published by . This book was released on 1987 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Guihua Lu
Publisher :
ISBN 13 :
Total Pages : 126 pages
Book Rating : 4.:/5 (211 download)
Download or read book Effect of Neutron Transmutation Doping on the Optical Properties of Gallium Arsenide written by Guihua Lu and published by . This book was released on 1988 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Kevin Douglas Seager
Publisher :
ISBN 13 :
Total Pages : 232 pages
Book Rating : 4.:/5 (237 download)
Download or read book Residual Lattice Disorder in Gallium Arsenide Due to Neutron Transmutation Doping written by Kevin Douglas Seager and published by . This book was released on 1990 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Robert D. Larrabee
Publisher : Springer Science & Business Media
ISBN 13 : 1461326958
Total Pages : 337 pages
Book Rating : 4.4/5 (613 download)
Download or read book Neutron Transmutation Doping of Semiconductor Materials written by Robert D. Larrabee and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
Author : Qing Lu
Publisher :
ISBN 13 :
Total Pages : 168 pages
Book Rating : 4.:/5 (224 download)
Download or read book Optical Properties of EL2 in Neutron Transmutation Doped Gallium Arsenide written by Qing Lu and published by . This book was released on 1989 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J. Meese
Publisher : Springer Science & Business Media
ISBN 13 : 1468482491
Total Pages : 368 pages
Book Rating : 4.4/5 (684 download)
Download or read book Neutron Transmutation Doping in Semiconductors written by J. Meese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.
Author : P. Martel
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (141 download)
Download or read book Proposed neutron transmutation doping of gaas wafers from cominco written by P. Martel and published by . This book was released on 1986 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : RR. Hart
Publisher :
ISBN 13 :
Total Pages : 12 pages
Book Rating : 4.:/5 (125 download)
Download or read book Neutron Transmutation Doping of Semi-Insulating Czochralskigrown GaAs written by RR. Hart and published by . This book was released on 1984 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have carried out neutron transmutation doping of undoped, initially semi-insulating, Czochralski-grown GaAs. We employed a series of nine neutron doses, which added between 2x1015 and 5x1017 cm-3 Ge and Se to the samples. Electron concentrations determined from Hall effect measurements on annealed samples with the three highest doses agree with the concentration of added Ge and Se within 5%, although the uncertainty in the measurements is 20%. These data are consistent with photoluminescence data which suggest 10% of the amphoteric Ge acts as an acceptor in the annealed material. Room temperature and temperature dependent Hall data place an upper limit of 4.9x1015 cm-3 on the concentration of donors of intermediate depth, consistent with our model for semi-insulating material.
Author : Hans Fritzsche
Publisher :
ISBN 13 :
Total Pages : 19 pages
Book Rating : 4.:/5 (227 download)
Download or read book Nuclear Transmutation Doping of GaAs written by Hans Fritzsche and published by . This book was released on 1980 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt: Superior GaAs material is in great demand for high frequency and high speed GaAs devices such as Impatt diodes, Gunn diodes, field effect transistors, and avalanche photodiodes. The quality and control of impurities in GaAs material is much less advanced than in elemental semiconductors such as Si. This is partly because substitutional dopants can occupy either Ga sites or As sites and they tend to associate and cluster. We intend to develop a new method for preparing homogeneous and well controlled GaAs material. This method is nuclear transmutation doping. It has yielded superior Si and Ge semiconductor device material and should be even more successful in the case of GaAs because of the larger neutron capture cross sections and shorter radioactive decay times involved. We intend to study the doping characteristics of bulk and epitaxial layers of GaAs using nuclear transmutation doping and the resulting electrical characteristics.
Author : International Atomic Energy Agency
Publisher :
ISBN 13 : 9789201300102
Total Pages : 95 pages
Book Rating : 4.3/5 (1 download)
Download or read book Neutron Transmutation Doping of Silicon at Research Reactors written by International Atomic Energy Agency and published by . This book was released on 2012 with total page 95 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication details the processes and history of neutron transmutation doping of silicon, particularly its commercial pathway, followed by the requirements for a technologically modern and economically viable production scheme and the current trends in the global market for semiconductor products. It should serve as guidelines on the technical requirements, involved processes and required quality standards for the transmission of sound practices and advice for research reactor managers and operators planning commercial scale production of silicon. Furthermore, a detailed and specific database of most of the worlds research reactor facilities in this domain is included, featuring their irradiation capabilities, associated production capacities and processing.
Author : Jagdishbhai Umedbhai Patel
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (774 download)
Download or read book Neutron Irradiation Effects in Gallium Arsenide written by Jagdishbhai Umedbhai Patel and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Changes in electrical properties of n-GaAs as a result of irradiations with fast neutrons have been studied, after epitaxial layers doped with Si at concentrations in the range 1.35 $\times$ 10$\sp{15}$ to 1.60 $\times$ 10$\sp{16}$ cm$\sp{-3}$ were irradiated with reactor neutron fluences up to 1.31 $\times$ 10$\sp{15}$ cm$\sp{-2}.$ When the changes in carrier concentration, Hall mobility and resistivity were more than 25% of their initial values, nonlinear dependence on neutron fluence was apparent. New theory is proposed which explains the changes in electrical properties in terms of rates of trapping and release of charges. A theoretical relationship is derived for the change in carrier concentration as a function of neutron fluence and doping level. A linear relationship between neutron fluence and Fermi level shift was found to be consistent with the observed changes in carrier concentration. A correlation has been found between the changes in carrier concentration and mobility with neutron fluence using newly defined physically meaningful parameters in the case of two pairs of samples. The correlation has been explained in terms of the increased scattering of charge carriers from the defects created by neutrons that trap the free carriers. Mobility changes were measured at temperatures from 15 K to 305 K in n-GaAs van-der Pauw samples irradiated by fast reactor neutrons. The inverse mobility values obtained versus temperature, from the variable temperature Hall measurements, in the case of irradiated and un-irradiated samples were fitted using the relation $\rm\mu\sp{-1}=A\ T\sp{-3/2}+B\ T\sp{3/2}.$ The inverse mobility increased as a result of neutron irradiations over the whole range of temperature, the increase being attributed to the increased scattering from neutron induced charged defects. The values of A found by least square fitting were used to estimate the increased scattering effect from neutron induced ionized defects after each step of irradiation. It is concluded that in order to explain the experimental results presented here, the creation of multiply charged defects must be considered. Effects of different neutron fields are compared in terms of the damage coefficients for carrier concentration and mobility. The ratio of averaged damage coefficients reflects the hardness of each neutron-energy spectrum with respect to one reference neutron-energy spectrum.
Author :
Publisher :
ISBN 13 :
Total Pages : 178 pages
Book Rating : 4.3/5 (91 download)
Download or read book Fabrication of Semiconductor Devices by Neutron Transmutation Doping written by and published by . This book was released on 1962-12 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Thomas William Gregg
Publisher :
ISBN 13 :
Total Pages : 112 pages
Book Rating : 4.:/5 (142 download)
Download or read book An Infrared Annealing Study of Neutron Transmutation Doped Silicon: Gallium written by Thomas William Gregg and published by . This book was released on 1985 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Richard Albert Gassman
Publisher :
ISBN 13 :
Total Pages : 150 pages
Book Rating : 4.:/5 (12 download)
Download or read book Isothermal Annealing Study of Neutron Transmutation Doped Silicon:gallium written by Richard Albert Gassman and published by . This book was released on 1983 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Christopher Yuan-Ting Liao
Publisher :
ISBN 13 :
Total Pages : 142 pages
Book Rating : 4.:/5 (35 download)
Download or read book Neutron Transmutation Doping of Isotopically Enriched Silicon written by Christopher Yuan-Ting Liao and published by . This book was released on 2006 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jens Guldberg
Publisher :
ISBN 13 : 9781461332626
Total Pages : 520 pages
Book Rating : 4.3/5 (326 download)
Download or read book Neutron-Transmutation-Doped Silicon written by Jens Guldberg and published by . This book was released on 2014-01-15 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 760 pages
Book Rating : 4.E/5 ( download)
Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt:
