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Neutron Damage In Gunn Effect Devices
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Book Synopsis Neutron Damage in Gunn Effect Devices by : Horst P. Bruemmer
Download or read book Neutron Damage in Gunn Effect Devices written by Horst P. Bruemmer and published by . This book was released on 1970 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt: A number of gallium arsenide Gunn diodes were exposed to neutron irradiation over a fluence range from 1.6 x 10 to the 13th power to 1.9 x 10 to the 14th power n/sq cm (E> 10 keV). Parameters measured were the diode current-voltage characteristic, frequency, and output power. From the low-field resistance an unusually high carrier removal rate of 20/cm was calculated. Output power and efficiency decreased linearly with increasing dose until catastrophic device failure occurred at approximately 10 to the 14th power n/sq cm (E> 10 keV). The oscillating frequencies did not noticeably change. (Author).
Book Synopsis Comparison of Neutron and Gamma Radiation Damage in Semiconductors by : M. N. Robinson
Download or read book Comparison of Neutron and Gamma Radiation Damage in Semiconductors written by M. N. Robinson and published by . This book was released on 1965 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Effect of Neutron Damage on Certain Critical Properties of the Superconducting Material NbN by : Renée Diane Jacowitz
Download or read book The Effect of Neutron Damage on Certain Critical Properties of the Superconducting Material NbN written by Renée Diane Jacowitz and published by . This book was released on 1986 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fusion Neutron Irradiation Effects on Some Electronic Devices by : Y. Tanimura
Download or read book Fusion Neutron Irradiation Effects on Some Electronic Devices written by Y. Tanimura and published by . This book was released on 2001 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: In order to examine the difference in the irradiation effects on Si electronic devices between deuterium-tritium (DT) and deuterium-deuterium (DD) fusion neutrons, several types of memory integrated circuits (ICs), charge coupled device (CCD) image sensors and a Si surface barrier detector (Si-SBD) were irradiated with neutrons from a deuteron accelerator. The transient effects (i.e., neutron-induced background noises) and permanent effects (i.e., neutron damage) on them were measured in situ during irradiation. Regarding the transient effects, soft error upsets, brightening spot noises and induced-charge noises were measured for the memory ICs, CCDs and the Si-SBD, respectively. As for the permanent effects, the number of damaged cells of the CCDs and the leakage current of the Si-SBD increased with neutron fluence. We also developed a Monte-Carlo code which used the code TRIM for charged particle transport to evaluate the DT and DD neutron effects on the Si devices. The calculated correlation factor of DT and DD neutron damage for the Si devices agreed approximately with the correlation factor obtained from the irradiation experiments on the CCDs and Si-SBD.
Book Synopsis Radiation Effects on Gallium Arsenide Devices and Schottky Diodes by : H. D. Southward
Download or read book Radiation Effects on Gallium Arsenide Devices and Schottky Diodes written by H. D. Southward and published by . This book was released on 1968 with total page 91 pages. Available in PDF, EPUB and Kindle. Book excerpt: Three gallium arsenide (GaAs) Gunn oscillators, several GaAs Transistors, and an optoelectronic pulse amplifier were investigated in a flash X-ray environment. Pulsed fast neutron damage to these devices was also studied. Test data for the transistors were compared to data for a 2N914 silicon transistor because both device characteristics are similar. Two Gunn diodes in the flash X-ray pulse reacted violently at 3 x 10 to the 8th power rad/sec. Individual components of the amplifier, including a GaAs light-emitting diode and a silicon light sensor, were studied. The light sensor is the critical element in the amplifier, being highly sensitive to the neutron fluences. However, physical limitations precluded study of flash X-ray effects upon a separate light emitter. (Author).
Book Synopsis Electron and Neutron Radiation Damage Effects on a Two-phase CCD by : K. D. Stefanov
Download or read book Electron and Neutron Radiation Damage Effects on a Two-phase CCD written by K. D. Stefanov and published by . This book was released on 1999 with total page 27 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Microwave Semiconductor Devices by : R. J. Chaffin
Download or read book Microwave Semiconductor Devices written by R. J. Chaffin and published by Wiley-Interscience. This book was released on 1973-10-05 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1975 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Monthly Accession List by : Radiation Effects Information Center (Columbus, Ohio).
Download or read book Monthly Accession List written by Radiation Effects Information Center (Columbus, Ohio). and published by . This book was released on 1970-04 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1982 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 912 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Reliability and Radiation Effects in Compound Semiconductors by : Allan H. Johnston
Download or read book Reliability and Radiation Effects in Compound Semiconductors written by Allan H. Johnston and published by World Scientific. This book was released on 2010 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms. It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.
Download or read book Government Reports Index written by and published by . This book was released on 1972 with total page 1076 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1982 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book NASA Technical Note written by and published by . This book was released on 1973 with total page 920 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fusion Energy Update written by and published by . This book was released on 1982-04 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis U.S. Government Research & Development Reports by :
Download or read book U.S. Government Research & Development Reports written by and published by . This book was released on 1969-10 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt: