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Negative Bias Temperature Instability Frequency Degradation Of Cmos 90 Process
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Book Synopsis CMOS RF Circuit Design for Reliability and Variability by : Jiann-Shiun Yuan
Download or read book CMOS RF Circuit Design for Reliability and Variability written by Jiann-Shiun Yuan and published by Springer. This book was released on 2016-04-13 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: The subject of this book is CMOS RF circuit design for reliability. The device reliability and process variation issues on RF transmitter and receiver circuits will be particular interest to the readers in the field of semiconductor devices and circuits. This proposed book is unique to explore typical reliability issues in the device and technology level and then to examine their impact on RF wireless transceiver circuit performance. Analytical equations, experimental data, device and circuit simulation results will be given for clear explanation. The main benefit the reader derive from this book will be clear understanding on how device reliability issues affects the RF circuit performance subjected to operation aging and process variations.
Book Synopsis Fundamentals of Bias Temperature Instability in MOS Transistors by : Souvik Mahapatra
Download or read book Fundamentals of Bias Temperature Instability in MOS Transistors written by Souvik Mahapatra and published by Springer. This book was released on 2015-08-05 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
Book Synopsis International Integrated Reliability Workshop Final Report by :
Download or read book International Integrated Reliability Workshop Final Report written by and published by . This book was released on 2005 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis 'Advances in Microelectronics: Reviews', Vol_1 by : Sergey Yurish
Download or read book 'Advances in Microelectronics: Reviews', Vol_1 written by Sergey Yurish and published by Lulu.com. This book was released on 2017-12-24 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 1st volume of 'Advances in Microelectronics: Reviews' Book Series contains 19 chapters written by 72 authors from academia and industry from 16 countries. With unique combination of information in each volume, the 'Advances in Microelectronics: Reviews' Book Series will be of value for scientists and engineers in industry and at universities. In order to offer a fast and easy reading of the state of the art of each topic, every chapter in this book is independent and self-contained. All chapters have the same structure: first an introduction to specific topic under study; second particular field description including sensing applications. Each of chapter is ending by well selected list of references with books, journals, conference proceedings and web sites. This book ensures that readers will stay at the cutting edge of the field and get the right and effective start point and road map for the further researches and developments.
Book Synopsis IEEE International Reliability Physics Symposium Proceedings by : International Reliability Physics Symposium
Download or read book IEEE International Reliability Physics Symposium Proceedings written by International Reliability Physics Symposium and published by . This book was released on 2004 with total page 766 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Extreme Environment Electronics by : John D. Cressler
Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.
Book Synopsis Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications by : Jacopo Franco
Download or read book Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications written by Jacopo Franco and published by Springer Science & Business Media. This book was released on 2013-10-19 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.
Download or read book JJAP written by and published by . This book was released on 2010 with total page 1570 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Japanese Journal of Applied Physics by :
Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2007 with total page 1502 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis IBM Journal of Research and Development by :
Download or read book IBM Journal of Research and Development written by and published by . This book was released on 2006 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dependable Multicore Architectures at Nanoscale by : Marco Ottavi
Download or read book Dependable Multicore Architectures at Nanoscale written by Marco Ottavi and published by Springer. This book was released on 2017-08-28 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the dependability challenges in today's advanced computing systems. It is an in-depth discussion of all the technological and design-level techniques that may be used to overcome these issues and analyzes various dependability-assessment methods. The impact of individual application scenarios on the definition of challenges and solutions is considered so that the designer can clearly assess the problems and adjust the solution based on the specifications in question. The book is composed of three sections, beginning with an introduction to current dependability challenges arising in complex computing systems implemented with nanoscale technologies, and of the effect of the application scenario. The second section details all the fault-tolerance techniques that are applicable in the manufacture of reliable advanced computing devices. Different levels, from technology-level fault avoidance to the use of error correcting codes and system-level checkpointing are introduced and explained as applicable to the different application scenario requirements. Finally the third section proposes a roadmap of future trends in and perspectives on the dependability and manufacturability of advanced computing systems from the special point of view of industrial stakeholders. Dependable Multicore Architectures at Nanoscale showcases the original ideas and concepts introduced into the field of nanoscale manufacturing and systems reliability over nearly four years of work within COST Action IC1103 MEDIAN, a think-tank with participants from 27 countries. Academic researchers and graduate students working in multi-core computer systems and their manufacture will find this book of interest as will industrial design and manufacturing engineers working in VLSI companies.
Book Synopsis Design and Test Technology for Dependable Systems-on-chip by : Raimund Ubar
Download or read book Design and Test Technology for Dependable Systems-on-chip written by Raimund Ubar and published by IGI Global. This book was released on 2011-01-01 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This book covers aspects of system design and efficient modelling, and also introduces various fault models and fault mechanisms associated with digital circuits integrated into System on Chip (SoC), Multi-Processor System-on Chip (MPSoC) or Network on Chip (NoC)"--
Book Synopsis MOSFET Modeling & BSIM3 User’s Guide by : Yuhua Cheng
Download or read book MOSFET Modeling & BSIM3 User’s Guide written by Yuhua Cheng and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
Download or read book CMOS Electronics written by Jaume Segura and published by John Wiley & Sons. This book was released on 2004-03-26 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS manufacturing environments are surrounded with symptoms that can indicate serious test, design, or reliability problems, which, in turn, can affect the financial as well as the engineering bottom line. This book educates readers, including non-engineers involved in CMOS manufacture, to identify and remedy these causes. This book instills the electronic knowledge that affects not just design but other important areas of manufacturing such as test, reliability, failure analysis, yield-quality issues, and problems. Designed specifically for the many non-electronic engineers employed in the semiconductor industry who need to reliably manufacture chips at a high rate in large quantities, this is a practical guide to how CMOS electronics work, how failures occur, and how to diagnose and avoid them. Key features: Builds a grasp of the basic electronics of CMOS integrated circuits and then leads the reader further to understand the mechanisms of failure. Unique descriptions of circuit failure mechanisms, some found previously only in research papers and others new to this publication. Targeted to the CMOS industry (or students headed there) and not a generic introduction to the broader field of electronics. Examples, exercises, and problems are provided to support the self-instruction of the reader.
Download or read book CMOS written by R. Jacob Baker and published by John Wiley & Sons. This book was released on 2008 with total page 1074 pages. Available in PDF, EPUB and Kindle. Book excerpt: This edition provides an important contemporary view of a wide range of analog/digital circuit blocks, the BSIM model, data converter architectures, and more. The authors develop design techniques for both long- and short-channel CMOS technologies and then compare the two.
Book Synopsis RF CMOS Oscillators for Modern Wireless Applications by : Masoud Babaie
Download or read book RF CMOS Oscillators for Modern Wireless Applications written by Masoud Babaie and published by River Publishers Circuits and. This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main goal of this book is to bring forth the exciting and innovative RF oscillator structures that demonstrate better phase noise performance, lower cost, and higher power efficiency than currently achievable.
Book Synopsis Thermally-Aware Design by : Yong Zhan
Download or read book Thermally-Aware Design written by Yong Zhan and published by Now Publishers Inc. This book was released on 2008 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides an overview of analysis and optimization techniques for thermally-aware chip design.
